SGS Thomson Microelectronics VND92013TR, VND920 Datasheet

®

VND920

DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

TYPE R

VND920 16mΩ 35 A (*) 36 V

(*) Per channel with all the output pins connected to the PCB.

■ CMOS COMPATIBLE INPUT

■ PROPORTIONAL LOAD CURRENT SENSE

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

DS(on)

I

OUT

V

CC

SHUTDOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUTDOWN

■ CURRENT LIMITATION

■ PROTECTION AGAI NST LOSS OF GROUND

AND LOSS OF V

■ VERY LOW ST AND -BY P OWER DI SSIPA TION

■ REVERSE BA TTERY PROTECTION ( *)

CC

DESCRIPTION

The VND920 is a double chip device made by using STMicroelectronics VIPower M0-3 Technology, intended fo r driving any kind of loa d with one side connected to ground. Active VCC pin

CONNECTION DIAGRAM (TO P VI EW)

SO-28 (DOUBLE ISLAND)

ORDER CODES

PACKAGE TUBE T&R

SO-28 VND920 VND92013TR

voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown a nd automatic restart prote ct the device against over load. Builtin analog cur rent sense output deli vers a current proportional to the load current. Device automatically turns off in case of ground pin disconnection.

V

1

CC

GND 1 INPUT 1 CURRENT SENSE 1 NC NC

V

1

CC

V

2

CC

GND 2 INPUT 2

CURRENT SENSE 2 NC NC

2

V

CC

(*) See application schematic at page 10

October 20 02 1/18

1

14 15

28

V OUTPUT 1 OUTPUT 1

OUTPUT 1

OUTPUT 2 OUTPUT 2 OUTPUT 2

OUTPUT 2

V

CC

1

2

1

VND920

BLOCK DIAGRAM

V

1

CC

GND 1

INPUT 1

GND 2

V

CC

CLAMP

OVERTEMPERATURE

DETECTION

V

CC

CLAMP

LOGIC

OVERVO LTAGE

DETECTION

UNDERVOLTAGE

DETECTION

DRIVER

CURRENT LIMITER

I

OVERVOLTAGE

DETECTION

UNDERVOLTAGE

DETECTION

Power CLAMP

OUTPUT 1

VDS LIMITER

OUT CURRENT

Power CLAMP

K

SENSE 1

V

CC

2

2/18

INPUT 2

LOGIC

OVERTEMPERATURE

DETECTION

DRIVER

CURRENT LIMITER

VDS LIMITER

I

OUT CURRENT

K

OUTPUT 2

SENSE 2

VND920

ABSOLUTE MAXIMUM RATI NG (Per each channel)

Symbol Parameter Value Unit

tot

DC Supply Voltage 41 V Reverse DC Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA DC Output Current Internally Limited A Reverse DC Output Current - 21 A DC Input Curr ent +/- 10 mA Current Sense Maximum Voltage -3

+15

Electros tatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)

- INPUT

- CURRENT SENSE

- OUTPU T

- V

CC

Maximum Switching Energy (L=0.25m H; R

=0Ω; V

L

=13.5V ; T

bat

=150ºC ; IL=45A)

jstart

4000 2000 5000 5000

355 mJ

Powe r Dissipation Tl≤25°C 6.25 (**) W Junction Operating Temperature Internally limited °C

j

Case Operating Temperature - 40 to 150 °C

c

Storage Temperature - 55 to 150 °C

V

CC

- V

- I

GND

I

OUT

- I

OUT

I

IN

V

CSENSE

V

ESD

E

MAX

P

T

STG

(**) Per island

V V

V V V V

CURRENT AND VOLTAGE CONVENTIONS

I

S1

V

CC1

I

IN1

V

IN1

I

IN2

V

IN2

INPUT1

INPUT2

GROUND1

I

GND1

V

CC2

OUTPUT1

OUTPUT2

GROUND2

V

CC1

CURRENT SENSE 1

CURRENT SENSE 2

I

GND2

I

OUT1

I

SENSE1

I

OUT2

I

SENSE2

V

SENSE2

V

OUT2

I

S2

SENSE1

V

OUT1

V

CC2

3/18

VND920

THERMAL DATA (Per island)

Symbol Parameter Value Unit

R

thj-lead

R

thj-amb

R

thj-amb

(*) When mounted on a standard single-sided FR-4 board with 1cm2 of Cu (at leas t 35µ m thick) connected to all VCC pins.

Horizontal mounting and no artificial air flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C unless otherwise specified) (Per island) POWER

Symbol Parameter Test Conditions Min Typ Max Unit

V

USD

V

R

V

clamp

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Thermal R esistance Junction-lead 20 °C/W Thermal Resistance Ju nction-ambient (one chi p ON) 55 (*) °C/W Thermal Resistance Ju nction-ambient (two chi ps ON) 42 (*) °C/W

CC

Opera ting S u pply Vol tag e 5.5 13 36 V Undervoltage Shut -down 3 4 5.5 V

OV

ON

Overv oltage Shut -down 36 V

=10A; Tj =25°C

I

On State Resistance

OUT

I

=10A

OUT

I

=3A; VCC=6V

OUT

Clamp Voltage ICC=20mA (See note 1) 41 48 55 V

Off Stat e; V

Supply Current

S

Off Stat e; V T

=25°C

j

On State; V R

SENSE

Off Stat e O utput Current VIN=V

OUT

Off Stat e O utput Current VIN=0V; V Off Stat e O utput Current VIN=V Off Stat e O utput Current VIN=V

OUT OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

=13V; VIN=5V; I

CC

=3.9KΩ

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; VCC=13V; Tj =125°C 5 µA =0V; VCC=13V; Tj =25°C 3 µA

OUT OUT

=0V =0V;

OUT

=0A;

10

16 32 55

25

20

5

mΩ mΩ mΩ

µA

mA

SWITCHING (VCC=13V)

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

t

d(off)

Turn-on Delay Time RL=1.3Ω (see figur e 2) 50 µs Turn-off Delay Time RL=1.3Ω (see figur e 2) 50 µs

See

dV

/dt

OUT

Turn-on Voltage Slope RL=1.3Ω (see figure 2)

(on)

relative

diagram

See

/dt

dV

OUT

Turn-off Voltage Slope RL=1.3Ω (see figure 2)

(off)

relative

diagram

LOGIC INPUT

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

V

I

V

I(hyst)

V

Note 1: V

4/18

IL

IH

ICL

Input Low Level 1.25 V

IL

Low Level Input Current VIN=1.25V 1 µA Input High Level 3.25 V

IH

High Level Input Current VIN=3.25V 10 µA Input Hysteresis Voltage 0.5 V

Input Cl am p Voltage

and VOV are correlat ed. Typical dif ference is 5V.

clamp

=1mA

I

IN

I

=-1mA

IN

66.8

-0.7

8V

V/µs

V

1

VND920

ELECTRICAL CHARACTERISTICS (continued)

CURRENT SENSE ( 9V ≤

Symbol Parameter Test Conditions Min Typ Max Unit

K

dK1/K1Current Se nse Ratio Drift

K

dK2/K2Current Se nse Ratio Drift

K

dK3/K3Current Se nse Ratio Drift

I

SENSEO

V

SENSE

V

SENSEH

R

VSENSEH

t

DSENSE

I

1

OUT/ISENSE

I

2

OUT/ISENSE

I

3

OUT/ISENSE

Analog Sense Leakage Current

Max Analog Sense Output Voltage

Sense Voltage in Overtemperature conditions

Analog Sense Output Impedance in Overtemperature Condition

Current sense delay response

V

≤ 16V) (See Fig.1)

CC

I

OUT

T

= -40°C...150°C

j

I

OUT

T

= -40°C...+150°C

j

I

OUT

T

=25°C... 150°C

j

I

OUT

T

=-40°C.. .+150°C

j

I

OUT

T

=25°C... 150°C

j

I

OUT

T

=-40°C.. .+150°C

j

V

CC

T

=-40°C.. .+150°C

j

V

CC

V

CC

VCC=13V; R

VCC=13V; Tj>T

to 90% I

=1A; V

SENSE

=1A; V

SENSE

=10A; V

=30A; V

=6...16V; I

=5.5V; I

OUT

>8V; I

OUT

SENSE

=0.5V;

=4V; Tj=-40°C

SENSE

=4V;

SENSE

=4V; Tj=-40°C

SENSE

=4V;

SENSE

=0A;V

OUT

=5A; R

=10A; R

SENSE

=3.9KΩ 5.5 V

; All channels open 400 Ω

TSD

SENSE

=0V;

=10KΩ

3300 4400 6000

-10 +10 %

4200 4400

4900 4900

6000 5750

-8 +8 %

4200 4400

4900 4900

5500 5250

-6 +6 %

010µA

2 4

(see note 2) 500 µs

V V

PROTECTIONS

Symbol Parameter Test Conditio ns Min Typ Max Unit

T

TSD

T

hyst

I

lim

V

demag

V

ON

Note 2: current sense signal delay after positive input sl ope

Note: Sense pin doesn’t have to be left floating.

Shut-down Temperature 150 175 200 °C Reset Temp erature 135 °C

R

Ther ma l Hy steresi s 7 15 °C DC Short Circuit Current Turn-off Output Clamp

Voltage Output Voltage Drop

Limitation

=13V

V

CC

5V<V I

I

<36V

CC

=2A; VIN=0V; L=6mH VCC-41 VCC-48 VCC-55 V

OUT

=1A; Tj=-40°C....+150°C 50 mV

OUT

30 45 75

75

2

A A

5/18

VND920

Figure 1: I

I

OUT/ISENSE

6500

6000

5500

versus I

OUT

max.Tj=25 ... 15 0 °C

5000

min.Tj=25...150°C

4500

4000

3500

3000

02468101214161820222426283032

I

(A)

OUT

Figure 2: Switching Characteristics (Resistive load RL=1.3Ω)

max.Tj=- 40°C

typical value

min.Tj=- 4 0° C

V

OUT

dV

OUT

I

SENSE

INPUT

/dt

(on)

t

d(on)

80%

90%

t

DSENSE

90%

dV

/dt

OUT

(off)

t

r

10%

t

f

t

d(off)

t

6/18