SGS Thomson Microelectronics VND830MSP Datasheet

®

VND830 MS P

DOUBLE CHANNEL HIGH SIDE DRIVER

TYPE R

DS(on)

I

OUT

V

CC

VND830MSP 60 mΩ (*) 6 A (*) 36 V

(*) Per each channel

■ CMOS COMPATIBLE INPUTS

■ OPEN DRAIN STATUS OUTPUTS

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ LOSS OF GROUND PROTECTION

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTIO N (**)

DESCRIPTION

The VND830MSP is a monolithic device designed in STMicroelectronics VIPower m0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protec ts the device against low energy spikes (see ISO7637 transient

BLO C K DIAG RA M

10

1

PowerSO-10

™

ORDER CODES

PACKAGE TUBE T&R

PowerSO-10™ VND830MSP VND830MSP13TR

compatibility table). Active current limitation combined with thermal shutdown a nd automatic restart protects the device against over load. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state. The openload threshold is aimed at detecting the 5W/12V standard bulb as an openload fault in the on state. Device automatically turns off in case of ground pin disconnection.

V

CC

V

CC

CLAMP

GND

INPUT1

STATUS1

OVERTEMP. 1

INPUT2

STATUS2

OVERTEMP. 2

(**) See application schematic at page 8

LOGIC

OVERVOLTAGE

UNDERVOLTAGE

CLAMP 1

DRIVER 1

CURRENT LIMITER 1

OPENLOAD ON 1

OPENLOAD OFF 1

CLAMP 2

DRIVER 2

CURRENT LIMITER 2

OPENLOAD ON 2

OPENLOAD OFF 2

OUTPUT1

OUTPUT2

July 2002 1/18

1

VND830MSP

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter Value Unit

tot

DC Supply Voltag e 41 V Reverse DC Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA DC Output Current Internally Limited A Reverse DC Output Current - 6 A DC Input Current +/- 10 mA DC Status Cur rent +/- 10 mA Electros tatic Discharge (Hum an Body Model: R=1.5KΩ; C=100pF)

- INPUT

- STATUS

- OUTPU T

- V

CC

Maximum Switching Energy (L=1.8mH; R

=0Ω; V

L

=13.5V; T

bat

=150ºC; IL=9A)

jstart

4000 4000 5000 5000

100 mJ

Powe r Dissipation TC=25°C 73.5 W Junction Operating Temperature Internal ly Limited °C

j

Case Operating Temperature - 40 to 150 °C

c

Storage Temperature - 55 to 150 °C

V

CC

- V

- I

GND

I

OUT

- I

OUT

I

IN

I

STAT

V

ESD

E

MAX

P

T

stg

CONNECTION DIAGRAM (TOP VIEW)

V V V V

GROUND INPUT 1 STATUS 1 STATUS 2 INPU T 2

V

CC

CURRENT AND VOLTAGE CO NVENTIONS

I

IN1

I

V

IN1

V

STAT1

I

IN2

I

V

STAT2

IN2

V

STAT2

INPUT 1

STATUS 1

INPUT 2

STATU S 2

6 7

8 9

10

11

5 4 3

2 1

V

CC

OUTPUT 1 OUTPUT 1 N.C. OUTPUT 2 OUTPUT 2

I

OUT1

I

S

V

CC

OUTPUT 1

V

OUT1

I

OUT2

V

OUT2

GND

OUTPUT 2

I

GND

2/18

1

VND830MSP

THERMAL DATA

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air

flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C < Tj < 150°C, unless otherwise specified)

(Per each channel) POWER OUTPUT

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

V

USD

V

OV

R

ON

I

S

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Thermal R esistanc e Junctio n-case 1.7 °C/W

Thermal Resistance Junction-ambient 51.7 (*) °C/W

(**) Oper at i ng Su pp ly Voltage 5.5 13 36 V

(**) Undervoltage Shut-down 3 4 5.5 V

(**) Overvolt age Shut-d own 36 V

On State Resistance

(**) Supply Current

Off State Output Curr ent VIN=V Off State Output Curr ent VIN=0V; V Off State Output Curr ent VIN=V Off State Output Curr ent VIN=V

=2A; Tj =25 °C

I

OUT

I

=2A; VCC> 8V

OUT

Off State; V Off State; V

Tj=25°C

On State; V

OUT

OUT OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

OUT OUT

=0V =0V;

12

=13V; VIN=5V; I

CC

OUT

=0A

5

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; Vcc=13V; Tj =125°C 5 µA =0V; Vcc=13V; Tj =25°C 3 µA

60

120

40

25

7

mΩ mΩ

µA

mA

(**) Per device

SWITCHING (VCC =13V)

Symbol Parameter Test Conditions Min Typ Max Uni t

RL=6.5Ω from VIN rising edge to V

=1.3V

OUT

RL=6.5Ω from VIN falling edge to V

=11.7V

OUT

RL=6.5Ω from V V

=10.4V

OUT

RL=6.5Ω from V V

=1.3V

OUT

=1.3V to

OUT

=11.7V to

OUT

30 µs

See

relative

diagram

See

relative

diagram

dV

t

d(on)

t

d(off )

dt

OUT

(on)

OUT

(off)

Turn-on Delay Time

Turn-off Delay Time

/

Turn-on Voltage Slope

/

Turn-off Voltage Slope

LOGIC INPUT

Symbol Parameter Test Conditions Mi n Typ Max Unit

Input Low Level 1.25 V

IL

Low Level Input Current VIN = 1.25V 1 µA

IL

Input High Level 3.25 V

IH

High Level Input Curr ent VIN = 3.25V 10 µA Input Hyst eresis Voltage 0.5 V

I

Input Clamp Voltage

= 1mA

IN

I

= -1mA

IN

66.8

-0.7

8V

V

I

V

I

IH

I(hyst)

ICL

V/µs

V

3/18

1

VND830MSP

ELECTRICAL CHARACTERISTICS (continued)

STATUS PIN

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Status Low Output Voltage I Status Leakage Current Normal Operation; V Status Pin Input

Capacitance Status Clamp Voltage

PROTECTIONS

Symbol Parameter Test Conditions Min Typ Max Uni t

T

TSD

T

t

SDL

I

V

demag

hyst

lim

Shut-down Temperature 150 175 200 °C

Reset Temp erature 135 °C

R

Ther ma l Hy steresi s 7 15 °C Status Delay in Overload

Conditions Current limitation Turn-off Output Clamp

Voltage

= 1.6 mA 0.5 V

STAT

Normal Operation; V

= 1mA

I

STAT

I

= - 1mA

STAT

Tj>T

TSD

V

=13V

CC

5.5V < V I

OUT

< 36V

CC

=2A; L= 6m H VCC-41 VCC-48 VCC-55 V

= 5V 10 µA

STAT

= 5V 100 pF

STAT

66.8

-0.7

691515A

8V

20 µs

V

A

OPENLOAD DETECTION

Symbol Parameter Test Conditions Mi n Typ Max Unit

I

OL

t

DOL(on)

V

T

DOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

V

INn

V

STATn

Openload ON State Detectio n Threshold Openload ON State Detection Delay

=5V 0.6 0.9 1.2 A

V

IN

=0A 200 µs

I

OUT

Openload OFF State Voltage Detection

OL

Threshold Openload Detection Delay

at Turn Off

V

OUT

t

DOL(off)

VIN=0V 1.5 2.5 3.5 V

OL

I

OUT

t

DOL(on)

> V

< I

OL

V

INn

V

STATn

1000 µs

OVER TEMP STATUS TIMING

Tj > T

TSD

t

SDL

t

SDL

4/18

2

1

Switching time Waveforms

V

OUTn

dV

/dt

OUT

(on)

V

INn

t

d(on)

80%

10%

t

d(off)

90%

dV

OUT

VND830MSP

/dt

(off)

t

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

Current Limitation

Overtemperature

Undervoltage

Overvoltage

Output Voltage > V

Output Current < I

OL

L H

L H H

L H

L

H

L X X

(T (T

< T

j

> T

j

L

L H

H

L H

TSD

H H

H ) H ) L

H

L

X

H

L

H

L

5/18

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VND830MSP

ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN

ISO T/R 7637/1

Test Pulse

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 + 25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

ISO T/R 76 37/1

Test Pulse

1C C C C

2C C C C 3aCCCC 3bCCCC

4C C C C

5C E E E

CLASS CONTENTS

C All functions of the device are performed as designed af ter expos ure to dis turbance . E One or more functions of the device is not performed as designed after exposure and cannot be returned

to proper operation without replacing the device.

I II III IV Delays and

I II III IV

TEST LEVELS

TEST LEVELS R ESULTS

Impedance

Ω

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