SGS Thomson Microelectronics VND83013TR, VND830 Datasheet

®
VND830
DOUBLE CHANNEL HIGH SIDE DRIVER
TYPE R
DS(on)
I
OUT
V
CC
VND830 60 m(*) 6 A (*) 36 V
(*) Per each channel
CMOS COMPATIBLE INPUTS
OPEN DRAIN STATUS OUTPUTS
ON STATE OPEN LOAD DETECTION
SHORTED LOAD PROTECTION
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
LOSS OF GROUND PROTECTION
VERY LOW STAND-BY CURRENT
REVERSE BATTERY PROTECTIO N (**)
DESCRIPTION
The VND830 is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, i ntended for dr iving any ki nd of load with one side connected to ground. Active VCC pin voltage clamp protects the devices against low energy spikes (see ISO7637 transient
BLO C K DIAG RA M
SO-16L
ORDER CODES
PACKAGE TUBE T&R
SO-16L VND830 VND83013TR
compatibility table). Active current limitation combined with thermal shutdown a nd automatic restart protects the device against over load. The device detects open load condition both is on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection.
V
CC
V
CC
CLAMP
GND
INPUT1
STATUS1
OVERTEMP. 1
INPUT2
STATUS2
OVERTEMP. 2
(**) See application schematic at page 8
LOGIC
OVERVOLTAGE
UNDERVOLTAGE
CLAMP 1
DRIVER 1
CURRENT LIMITER 1
OPENLOAD ON 1
OPENLOAD OFF 1
CLAMP 2
DRIVER 2
CURRENT LIMITER 2
OPENLOAD ON 2
OPENLOAD OFF 2
OUTPUT1
OUTPUT2
July 2002 1/19
VND830
ABSOLUTE MAXIMUM RATI NG
Symbol Parameter Value Unit
tot
DC Supply Voltage 41 V Reverse DC Supply Voltage - 0.3 V
CC
DC Reverse Ground Pin Curren t - 200 mA DC Output Current Internally Limited A Reverse DC Output Current - 6 A DC Input Current +/- 10 mA DC Status Cur rent +/- 10 mA Electros tatic Discharge (Hum an Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPU T
- V
CC
Maximum Switching Energy (L=1.8mH; R
Powe r Dissipation T Junction Operating Temperature Internally Limited °C
j
Case Operating Temperature - 40 to 150 °C
c
=0; V
L
=13.5V; T
bat
=25°C 8.3 W
lead
=150ºC; IL=9A)
jstart
4000 4000 5000 5000
102 mJ
Storage Temperature - 55 to 150 °C
V
CC
- V
- I
GND
I
OUT
- I
OUT
I
IN
I
STAT
V
ESD
E
MAX
P
T
T
T
stg
CONNECTION DIAGRAM (TOP VIEW)
V V V V
V
CC
N.C. GND INPUT 1 STATUS 1 STATUS 2 INPUT 2 V
CC
CURRENT AND VOLTAGE CO NVENTIONS
I
IN1
I
V
IN1
V
STAT1
STAT1
I
IN2
I
V
STAT2
IN2
V
STAT2
INPUT 1
STATUS 1
INPUT 2
STATUS 2
1
8
16
9
V
CC
OUTPUT 1 OUTPUT 1 OUTPUT 1 OUTPUT 2 OUTPUT 2 OUTPUT 2 V
CC
V
CC
I
OUT1
I
S
V
CC
OUTPUT 1
V
OUT1
I
OUT2
V
OUT2
GND
OUTPUT 2
I
GND
2/19
VND830
THERMAL DATA
Symbol Parameter Value Unit
R
thj-lead
R
thj-amb
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting an d no ar tificial ai r flow.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)
(Per each channel) POWER OUTPUT
Symbol Parameter Test Conditions Min Typ Max Unit
V
CC
V
USD
V
OV
R
ON
I
S
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
Thermal R esistanc e Junctio n-lead 15 °C/W
Thermal Resistance Junction-ambient 65 (*) °C/W
(**) Oper at i ng Su pp ly Voltage 5.5 13 36 V
(**) Undervoltage Shut-down 3 4 5.5 V
(**) Overvolt age Shut-d own 36 V
On State Resistance
(**) Supply Current
Off State Output Curr ent VIN=V Off State Output Curr ent VIN=0V; V Off State Output Curr ent VIN=V Off State Output Curr ent VIN=V
=2A; Tj =25 °C
I
OUT
I
=2A; VCC> 8V
OUT
Off State; V Off State; V
Tj=25°C
On State; V
OUT
OUT OUT
=13V; VIN=V
CC
=13V; VIN=V
CC
OUT OUT
=0V =0V;
12
12
=13V; VIN=5V; I
CC
OUT
=0A
5
=0V 0 50 µA
=3.5V -75 0 µA
OUT
=0V; Vcc=13V; Tj =125°C 5 µA =0V; Vcc=13V; Tj =25°C 3 µA
60
120
40
25
7
m m
µA
µA
mA
(**) Per device
SWITCHING (VCC =13V)
Symbol Parame ter Test Conditions M in Typ Max Unit
t
d(on)
t
d(off )
dV/dt
dV/dt
Turn-on Delay Time
Turn-off Delay Time
Turn-on Voltage Slope
(on)
Turn-off Voltage Slope
(off)
RL=6.5Ω from VIN rising edge to V
=1.3V
OUT
RL=6.5Ω from VIN falling edge to V
=11.7V
OUT
RL=6.5Ω from V V
=10.4V
OUT
RL=6.5Ω from V V
=1.3V
OUT
=1.3V to
OUT
=11.7V to
OUT
30 µs
30 µs
See
relative
diagram
See
relative
diagram
LOGIC INPUT
Symbol Param eter Test Conditions Min Typ Max Unit
Input Low Level 1.25 V
IL
Low Level Input Current VIN = 1.25V 1 µA
IL
Input High Level 3.25 V
IH
High Level Input Curr ent VIN = 3.25V 10 µA Input Hyst eresis Voltage 0.5 V
I
Input Clamp Voltage
= 1mA
IN
I
= -1mA
IN
66.8
-0.7
8V
V
V
V
V
I
I
IH
hyst
ICL
V/µs
V/µs
V
3/19
1
VND830
ELECTRICAL CHARACTERISTICS (continued)
STATUS PIN
Symbol Parameter Test Conditions Min Typ Max Unit
V
STAT
I
LSTAT
C
STAT
V
SCL
Status Low Output Voltage I Status Leakage Current Normal Operation; V Status Pin Input
Capacitance Status Clamp Voltage
PROTECTIONS
Symbol Parame ter Test Conditions M in Typ Max Unit
T
TSD
T
T T
SDL
I
V
demag
hyst
lim
Shut-down Temperature 150 175 200 °C
Reset Temp erature 135 °C
R
Ther ma l Hy steresi s 7 15 °C Status Delay in Overload
Conditions Current limitation Turn-off Output Clamp
Voltage
= 1.6 mA 0.5 V
STAT
Normal Operation; V
= 1mA
I
STAT
I
= - 1mA
STAT
Tj>T
TSD
V
=13V
CC
5.5V < V I
OUT
< 36V
CC
=2A; L= 6m H VCC-41 VCC-48 VCC-55 V
= 5V 10 µA
STAT
= 5V 100 pF
STAT
66.8
-0.7
691515A
8V
20 µs
V
A
OPENLOAD DETECTION
Symbol Param eter Test Conditions Min Typ Max Unit
I
OL
t
DOL(on)
V
t
DOL(off)
OPEN LOAD STATUS TIMING (with external pull-up)
V
INn
V
STATn
Openload ON State Detectio n Threshold Openload ON State Detection Delay
=5V 50 100 200 mA
V
IN
=0A 200 µs
I
OUT
Openload OFF State Voltage Detection
OL
Threshold Openload Detection Delay
at Turn Off
V
OUT
t
DOL(off)
VIN=0V 1.5 2.5 3.5 V
OL
I
OUT
t
DOL(on)
> V
< I
OL
V
INn
V
STATn
1000 µs
OVERTEMP STATUS TIMING
Tj > T
TSD
t
SDL
t
SDL
4/19
2
Switching time Waveforms
V
OUTn
dV
/dt
OUT
(on)
V
INn
t
d(on)
80%
10%
t
d(off)
90%
dV
OUT
/dt
VND830
(off)
t
t
TRUTH TABLE
CONDITIONS INPUT OUTPUT STATUS
Normal Operation
Current Limitation
Overtemperature
Undervoltage
Overvoltage
Output Voltage > V
Output Current < I
OL
OL
L
H
L H H
L H
L H
L H
L H
L H
L
H
L X X
(T
(T
< T
j
> T
j
L
L
L
L
L
L H
H
L H
TSD
TSD
H H
H ) H ) L
H
L
X
X
H
H
L
H
H
L
5/19
VND830
ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN
ISO T/R 7637/1
Test Pulse
1 -25 V -50 V -75 V -100 V 2 ms 10
2 +25 V +50 V +75 V +100 V 0.2 ms 10 3a -25 V -50 V -100 V -150 V 0.1 µs 50 3b +25 V +50 V +75 V +100 V 0.1 µs 50
4 -4 V -5 V -6 V -7 V 100 ms, 0.01
5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2
ISO T/R 76 37/1
Test Pulse
1C C C C
2C C C C 3aCCCC 3bCCCC
4C C C C
5C E E E
CLASS CONTENTS
C All functions of the device are perf ormed as designed af ter expos ure to disturbance . E One or more functions of the device is not performed as designed after exposure and cannot be returned
to proper operation without replacing the device.
I II III IV Delays and
I II III IV
TEST LEVELS
TEST LEVELS R ESULTS
Impedance
6/19
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