SGS Thomson Microelectronics VND810MSP Datasheet

®

VND810 MS P

DOUBLE CHANNEL HIGH SIDE DRIVER

TYPE R

DS(on)

I

OUT

V

CC

VND810 M SP 150 mΩ (*) 0.6 A (*) 36 V

(*) Per each channel

■ CMOS COMPATIBLE INPUTS

■ OPEN DRAIN STATUS OUTPUTS

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTIO N (**)

DESCRIPTION

The VND810MSP is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltag e clamp protects th e dev ice against low energy spikes (see ISO7637 transient compatibility table). Active current limitation

BLO C K DIAG RA M

10

1

PowerSO-10

™

ORDER CODES

PACKAGE TUBE T&R

PowerSO-1 0™ VND810MSP VND810MSP13TR

combined with thermal shutdown and automatic restart protects the device against overloa d. The current limitati on threshold is aimed at d etecting the 21W/12V sta ndard bulb as an o verload fault. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection.

V

cc

V

cc

CLAMP

GND

INPUT1

STATUS1

OVERTEMP. 1

INPUT2

STATUS2

OVERTEMP. 2

(**) See appl ic ation schema tic at page 8

LOGIC

OVERVO LTAGE

UNDERVOLTAGE

CLAMP 1

DRIVER 1

CURRENT LIMITER 1

OPENLOAD ON 1

OPENLOAD OFF 1

CLAMP 2

DRIVER 2

CURRENT LIMITER 2

OPENLOAD ON 2

OPENLOAD OFF 2

OUTPUT1

OUTPUT2

July 2002 1/18

1

VND810MSP

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter Value Unit

tot

DC Supply Voltage 41 V Reverse DC Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA DC Output Current Internally Limited A Reverse DC Output Current - 6 A DC Input Current +/- 10 mA DC Status Cur rent +/- 10 mA Electros tatic Discharge (Hum an Body Model: R=1.5KΩ; C=100pF)

- INPUT

- STATUS

- OUTPU T

- V

CC

Maximum Switching Energy (L=400mH; R

=0Ω; V

L

=13.5V; T

bat

=150ºC; IL=0.9A)

jstart

4000 4000 5000 5000

225 mJ

Powe r Dissipation TC=25°C 52 W Junction Operating Temperature Internally Limited °C

j

Case Operating Temperature - 40 to 150 °C

c

Storage Temperature - 55 to 150 °C

V

CC

- V

- I

GND

I

OUT

- I

OUT

I

IN

I

stat

V

ESD

E

MAX

P

T

stg

CONNECTION DIAGRAM (TOP VIEW)

V V V V

GROUND INPUT 1 STATUS 1 STA TUS 2 INPUT 2

V

CC

CURRENT AND VOLTAGE CO NVENTIONS

I

IN1

STAT1

V

I

IN2

V

STAT2

V

IN1

V

INP UT 1

STAT1

STATUS 1

IN2

INPUT 2

STAT2

STATUS 2

6 7 8 9

10

11

GND

5 4 3

2 1

V

CC

OUTPUT 1

OUTPUT 2

I

GND

OUTPUT 1 OUTPUT 1 N.C. OUTPUT 2 OUTPUT 2

I

OUT2

V

OUT2

I

OUT1

V

OUT1

I

S

V

CC

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VND810MSP

THERMAL DATA

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick). Horizontal mounting and no artificial air

flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C < Tj <150°C, unless otherwise specified)

(Per each channel) POWER OUTPUTS

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

V

USD

V

OV

R

ON

I

S

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

(**) Per device

SWITCHING (VCC=13V)

Symbol Parame ter Test Condit ions Min Typ Max Unit

t

d(on)

t

d(off )

dV

OUT

dt

(on)

dV

OUT

dt

(off)

Thermal R esistanc e Junctio n-case 2.4 °C/W

Thermal Resistance Junctio n-ambient 52.4 (*) °C/W

(**) Operating Supply Voltage 5.5 13 36 V

(**) Undervoltage Shut -down 3 4 5.5 V

(**) Overvoltage Shut-down 36 V

On State Resistance

(**) Supply Current

Off State Output Curr ent VIN=V Off State Output Curr ent VIN=0V; V Off State Output Curr ent VIN=V Off State Output Curr ent VIN=V

Turn-on Delay Time

Turn-off Delay Time

/

Turn-on Voltage Slope

/

Turn-off Voltage Slope

=0.5A; Tj=25°C

I

OUT

I

=0.5A; VCC>8V

OUT

Off State; V Off State; V

=13V; VIN=V

CC

=13V; VIN=V

CC

OUT OUT

Tj=25°C

On State; V

RL=13Ω from VIN rising edge to V

=1.3V

OUT

RL=13Ω from VIN falling edge to V

=11.7V

OUT

RL=13Ω from V V

=10.4V

OUT

RL=13Ω from V V

=1.3V

OUT

=13V; VIN=5V; I

CC

=0V 0 50 µA

OUT

=3.5V -75 0 µA

OUT

=0V; Vcc=13V; Tj =125°C 5 µA

OUT

=0V; Vcc=13V; Tj =25°C 3 µA

OUT

=1.3V to

OUT

=11.7V to

OUT

=0V =0V;

=0A

12

30 µs

See

relative

diagram

See

relative

diagram

150 320

40

25

5

7

mΩ mΩ

µA

mA

V/µs

LOGIC INPUT

Symbol Param eter Test Conditions Min Typ Max Unit

Input Low Level 1.25 V

IL

Low Level Input Current VIN = 1.25V 1 µA

IL

Input High Level 3.25 V

IH

High Level Input Curr ent VIN = 3.25V 10 µA Input Hyst eresis Vo lt age 0.5 V

I

Input Clamp Voltage

= 1mA

IN

I

= -1mA

IN

66.8

-0.7

8V

V

I

V

I

IH

I(hyst)

ICL

V

3/18

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VND810MSP

ELECTRICAL CHARACTERISTICS (continued)

STATUS PIN

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Status Low Output Voltage I Status Leakage Current Normal Operation; V Status Pin Input

Capacitance Status Clamp Voltage

PROTECTIONS

Symbol Parame ter Test Condit ions Min Typ Max Unit

T

TSD

T

t

SDL

I

V

demag

hyst

lim

Shut-down Temperature 150 175 200 °C

Reset Temp erature 135 °C

R

Ther ma l Hy steresi s 7 15 °C Status Delay in Overload

Conditions Current limitation Turn-off Output Clamp

Voltage

= 1.6 mA 0.5 V

STAT

Normal Operation; V

= 1mA

I

STAT

I

= - 1mA

STAT

Tj>T

TSD

= 5V 10 µA

STAT

= 5V 100 pF

STAT

66.8

-0.7

0.6 0.9 1.2

5.5V<V I

OUT

<36V

CC

=0.5A; L=6mH VCC-41 VCC-48 VCC-55 V

8V

20 µs

1.2

V

A A

OPENLOAD DETECTION

Symbol Parameter Test Conditions Min Typ Max Unit

I

OL

t

DOL(on)

V

t

DOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

V

INn

V

STAT n

Openload ON State Detectio n Threshol d Openload ON State Detection Delay

=5V 20 40 80 mA

V

IN

=0A 200 µs

I

OUT

Openload OFF State Voltage Detection

OL

Threshold Openload Detection Delay

at Turn Off

V

OUT

t

DOL(off)

VIN=0V 1.5 2.5 3.5 V

> V

OL

I

OUT

t

DOL(on)

< I

OL

V

INn

V

STAT n

1000 µs

OVER TEMP STATUS TIMING

Tj > T

TSD

t

SDL

t

SDL

4/18

2

1

Switching time Waveforms

V

OUTn

dV

/dt

OUT

(on)

V

INn

t

d(on)

80%

10%

VND810MSP

90%

dV

/dt

OUT

(off)

t

td

(off)

t

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Ope ration

Current Limitation

Overtem peratur e

Undervoltage

Overvoltage

Output Voltage > V

Output Current < I

OL

L H

L H H

L H

L

H

L X X

(T

< T

j

> T

j

L

L H

H

L H

TSD TSD

H H

H

) H

) L

H L

X X

H H

L H

H L

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VND810MSP

ELECTRICAL TRANS IENT REQUIREMENTS ON VCC PIN

ISO T/R 7637/1

Test Pulse

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -2 5 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b + 25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

ISO T/R 76 37 / 1

Test Pulse

1CCCC

2CCCC 3aCCCC 3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All functions of the device are perfo rmed as designed after exposure to disturbance . E One or more functions of the dev ice is not performed as desig ned after exposure and cannot be

returned to prop er operat ion without replacing the devi ce.

I II III IV Delays and

I II III IV

TEST LEVELS

TEST LEVELS RESULTS

Impedance

Ω

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SGS Thomson Microelectronics VND810MSP Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual