SGS Thomson Microelectronics VND81013TR, VND810 Datasheet

®

July 2002 1/19

VND810

DOUBLE CHANNEL HIGH SIDE DRIVER

■ CMOS COMPATIBLE INPUTS

■ OPEN DRAIN STATUS OUTPUTS

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTIO N (**)

DESCRIPTION

The VND810 is a monolithic device designe d in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltag e clamp protects th e dev ice against low energy spikes (see ISO7637 transient compatibility table). Active current limitation

combined with thermal shutdown and automatic restart protects the device against overloa d. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state. Dev ice auto mati cally tur ns off in c ase of ground pin disconnection.

TYPE R

DS(on)

I

OUT

V

CC

VND810 160 mΩ (*) 3.5 A (*) 36 V

SO-16

ORDER CODES

PACKAGE TUBE T&R

SO-16

VND810 VND81013TR

(*) Per each channel

BLO C K DIAG RA M

(**) See appl ic ation schema tic at page 8

OVERTEMP. 1

V

cc

GND

INPUT1

OUTPUT1

OVERVOLTAGE

LOGIC

DRIVER 1

STATUS1

V

cc

CLAMP

UNDERVOLTAGE

CLAMP 1

OPENLOAD ON 1

CURRENT LIMITER 1

OPENLOAD OFF 1

OUTPUT2

DRIVER 2

CLAMP 2

OPENLOAD ON 2

OPENLOA D OFF 2

OVERTEMP. 2

INPUT2

STATUS2

CURRENT LIMITER 2

2/19

VND810

ABSOLUTE MAXIMUM RATI NG

CONNECTION DIAGRAM (TOP VIEW)

CURRENT AND VOLTAGE CONVENTIONS

Symbol Parameter Value Unit

V

CC

DC Supply Voltage 41 V

- V

CC

Reverse DC Supply Voltage - 0.3 V

- I

GND

DC Reverse Ground Pin Current - 200 mA

I

OUT

DC Output Current Internally Limited A

- I

OUT

Reverse DC Output Current - 6 A

I

IN

DC Input Current +/- 10 mA

I

stat

DC Status Cur rent +/- 10 mA

V

ESD

Electros tatic Discharge (Hum an Body Model: R=1.5KΩ; C=100pF)

- INPUT

- STATUS

- OUTPU T

- V

CC

4000 4000 5000 5000

V V V V

E

MAX

Maximum Switching Energy (L=1.5mH; R

L

=0Ω; V

bat

=13.5V; T

jstart

=150ºC; IL=5A)

26 mJ

P

tot

Powe r Dissipation TC=25°C 8.3 W

T

j

Junction Operating Temperature Internally Limited °C

T

c

Case Operating Temperature - 40 to 150 °C

T

stg

Storage Temperature - 55 to 150 °C

V

CC

V

CC

OUTPUT 2

OUTPUT 1

V

CC

OUTPUT 1

V

CC

V

CC

INPUT 2

STA TUS 2

ST ATUS 1

INPUT 1

V

CC

GND

N.C.

1

8

9

16

I

S

I

GND

OUTPUT 2

V

CC

GND

STATUS 2

INPUT 2

I

OUT2

I

IN2

I

STAT2

V

STAT2

V

IN2

V

CC

V

OUT2

OUTPUT 1

I

OUT1

V

OUT1

INPUT 1

I

IN1

STATUS 1

I

STAT1

V

IN1

V

STAT 1

3/19

VND810

THERMAL DATA

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal

mounting an d no ar tificial ai r flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C < Tj <150°C, unless otherwise specified)

(Per each channel) POWER OUTPUTS

(**) Per device

SWITCHING (VCC=13V)

LOGIC INPUT

Symbol Parameter Value Unit

R

thj-lead

Thermal R esistanc e Junctio n-lead 15 °C/W

R

thj-amb

Thermal Resistance Junctio n-ambient 75 (*) °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

(**) Operating Supply Voltage 5.5 13 36 V

V

USD

(**) Under Voltage Shut-down 3 4 5.5 V

V

OV

(**) Ove rvoltage Shut-down 36 V

R

ON

On State Resistance

I

OUT

=1A; Tj=25°C

I

OUT

=1A; VCC>8V

160 320

mΩ mΩ

I

S

(**) Supply Current

Off State; V

CC

=13V; VIN=V

OUT

=0V

Off State; V

CC

=13V; VIN=V

OUT

=0V;

Tj=25°C

On State; V

CC

=13V; VIN=5V; I

OUT

=0A

12

5

40

25

7

µA

mA

I

L(off1)

Off State Output Curr ent VIN=V

OUT

=0V 0 50 µA

I

L(off2)

Off State Output Curr ent VIN=0V; V

OUT

=3.5V -75 0 µA

I

L(off3)

Off State Output Curr ent VIN=V

OUT

=0V; Vcc=13V; Tj =125°C 5 µA

I

L(off4)

Off State Output Curr ent VIN=V

OUT

=0V; Vcc=13V; Tj =25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

Turn-on Delay Time

RL=13Ω from VIN rising ed ge to V

OUT

=1.3V

30 µs

t

d(off)

Turn-off Delay Time

RL=13Ω from VIN falling edge to V

OUT

=11.7V

30 µs

dV

OUT

/dt

(on)

Turn-on Voltage Slope

RL=13Ω from V

OUT

=1.3V to

V

OUT

=10.4V

See

relative

diagram

V/µs

dV

OUT

/dt

(off)

Turn-off Voltag e Slope

RL=13Ω from V

OUT

=11.7V to

V

OUT

=1.3V

See

relative

diagram

V/µs

Symbol Param eter Test Conditions Min Typ Max Unit

V

IL

Input Low Level 1.25 V

I

IL

Low Level Input Current VIN = 1.25V 1 µA

V

IH

Input High Level 3.25 V

I

IH

High Level Input Curr ent VIN = 3.25V 10 µA

V

I(hyst)

Input Hyst eresis Voltage 0.5 V

V

ICL

Input Clamp Voltage

I

IN

= 1mA

I

IN

= -1mA

66.8

-0.7

8V

V

1

4/19

VND810

ELECTRICAL CHARACTERISTICS (continued)

STATUS PIN

PROTECTIONS

OPENLOAD DETECTION

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

Status Low Output Voltage I

STAT

= 1.6 mA 0.5 V

I

LSTAT

Status Leakage Current Normal Operation; V

STAT

= 5V 10 µA

C

STAT

Status Pin Input Capacitance

Normal Operation; V

STAT

= 5V 100 pF

V

SCL

Status Clamp Voltage

I

STAT

= 1mA

I

STAT

= - 1mA

66.8

-0.7

8V

V

Symbol Parame ter Test Condit ions Min Typ Max Unit

T

TSD

Shut-down Temperature 150 175 200 °C

T

R

Reset Temp erature 135 °C

T

hyst

Ther ma l Hy steresi s 7 15 °C

t

SDL

Status Delay in Overload Conditions

Tj>T

TSD

20 µs

I

lim

Current limitation

5.5V<V

CC

<36V

3.5 5 7.5

7.5

A A

V

demag

Turn-off Output Clamp Voltage

I

OUT

=1A; L= 6m H VCC-41 VCC-48 VCC-55 V

Symbol Param eter Test Conditions Min Typ Max Unit

I

OL

Openload ON State Detectio n Threshol d

V

IN

=5V 20 40 80 mA

t

DOL(on)

Openload ON State Detection Delay

I

OUT

=0A 200 µs

V

OL

Openload OFF State Voltage Detection Threshold

VIN=0V 1.5 2.5 3.5 V

t

DOL(off)

Openload Detection Delay at Turn Off

1000 µs

2

V

INn

V

STAT n

t

DOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

V

INn

V

STAT n

OVERTEMP ST ATUS TIMING

t

SDL

t

SDL

I

OUT

< I

OL

V

OUT

> V

OL

t

DOL(on)

Tj > T

TSD

5/19

VND810

t

V

OUTn

V

INn

80%

10%

dV

OUT

/dt

(on)

t

d(off)

90%

dV

OUT

/dt

(off)

t

d(on)

Switching time Waveforms

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

L

H

L

H

H H

Current Limitation

L H H

L X X

H

(T

j

< T

TSD

) H

(T

j

> T

TSD

) L

Overtemperature

L

H

L

H L

Undervoltage

L

H

L

X X

Overvoltage

L

H

L

H H

Output Voltage > V

OL

L

H

H H

L H

Output Current < I

OL

L

H

L H

H L

6/19

VND810

ELECTRICAL TRANS IENT REQUIREMENTS ON VCC PIN

ISO T/R 7637/1

Test Pulse

TEST LEVELS

I II III IV Delays and

Impedance

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -2 5 V - 50 V - 100 V -150 V 0.1 µs 50 Ω 3b + 25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

Ω

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

Ω

ISO T/R 76 37 / 1

Test Pulse

TEST LEVELS RESULTS

I II III IV

1CCCC

2CCCC 3aCCCC 3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All func tions of the device are performed as desi gned afte r exposure to disturbance. E One or more f unctions of the device is not per formed as designe d after exp osure and cannot be

returned to prop er operation withou t replacing the device.