SGS Thomson Microelectronics VND7NV04-1, VND7NV04, VNS7NV04, VNN7NV04 Datasheet

®

VNN7NV04 / VNS7NV04

/ VND7NV 04 / VND7NV0 4-1

“OMNIFET II”:

FULLY AUTOPROTECTED POW ER M OSFET

TYPE R

VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1

n

LINEAR CURRENT LIMITATION

n

THERMAL SHUT DOWN

n

SHORT CIRCUIT PROTECTION

n

INTEGRATED CLAMP

n

LOW CURRENT DRAWN FRO M INPUT PIN

n

DIAGNOSTIC FEEDBACK THROUGH INPUT

DS(on)

60 mΩ 6 A 40 V

I

lim

V

clamp

n

ESD PROTECTION

n

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

n

COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are mon ol ithi c devic es desi g ned in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power

BLOCK DIAGRAM

2

3

2

1

SOT-223

3

1

TO25 2 (D PAK)

SO-8

TO251 (IPAK)

3

2

1

ORDER CODES

PACKAGE TUBE T&R

SOT-223 VNN7NV04 VNN7NV0413TR

SO-8 VNS7NV04 VNS7NV0413TR

TO-252 (DPAK) VND7NV04 VND7NV0413TR TO-251 (IP AK) VND7NV04-1

-

MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, l inear curren t limitation and overvoltage cla mp protects the chip in harsh environments. Fault feedback can be de tected by mon itori ng the voltage at the input pin.

DRAIN

2

Overvoltage

Clamp

INPUT

1

Februa ry 2003 1/29

Gate

Control

Over

T emperature

Linear

Current

Limiter

3

SOURCE

FC01000

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

Drain-source Voltage (VIN=0V) Intern ally Clamped V Input Voltage Internally Clamped V

IN

Input Current +/-20 mA Minimum I nput Series Impedance 150 Ω Drain Current Internally Limited A Reverse DC Output Current -10.5 A Electros tatic Discharge (R=1.5KΩ, C=100pF) 4000 V Electros tatic Discharge on output pin only

(R=330Ω, C=150pF) Total Dissipation at Tc=25°C 7 4.6 60 W

tot

Maximum Switching Energy (L=0.7mH; RL=0Ω; V

=13.5V; T

bat

=150ºC; IL=9A)

jstart

Maximum Switching Energy (L=0.6mH; RL=0Ω; V

Operating Junction Temperature Internally limited °C

j

Case Operating Temperature Internally limit ed °C

c

=13.5V; T

bat

=150ºC; IL=9A)

jstart

Storage Temperatu re -55 to 150 °C

R

V V

E

V

DS

V

I

IN

IN MIN

I

D

I

R

ESD1

ESD2

P

MAX

T

stg

CONNECTION DIAGRAM (TO P VI EW)

SOT-223 SO-8 DPAK/IPAK

Value

Unit

16500 V

40 40 mJ

37 mJ

SOURCE SOURCE SOURCE INPUT

1

4

SO-8 Package (*)

(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.

CURRENT AND VOLTAGE CONVEN TIO NS

R

I

IN

V

IN

INPUT

8

5

DRAIN

SOURCE

DRAIN DRAIN DRAIN DRAIN

I

D

V

DS

2/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounted on a standard single-sided FR4 board with 0.5cm

Thermal R esistance Junction-case}} } MAX 18 2.1 2.1 °C/W

Thermal R esistance Junction-lead MAX 27 °C/W Ther ma l R esistan ce J u nction-ambient MAX 96 (*) 90 (*) 65 (*) 102 °C/W

SOT-223 SO-8 DPAK IPAK

2

of Cu (at least 35 µm thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified) OFF

Symbol Parameter Test Conditions Min Typ Max Unit

V

CLAMP

V

CLTH

V

INTH

I

ISS

V

INCL

I

DSS

Drain-source Clamp Voltage

Drain-source Clamp Threshold Voltage

Input Thre shold Voltage VDS=VIN; ID=1mA 0. 5 2.5 V Supply Current from Input

Pin Input-Source Clamp

Voltage Zero Input Voltage Drain

Current (VIN=0V)

VIN=0V; ID=3.5A 40 45 55 V

VIN=0V; ID=2mA 36 V

=0V; VIN=5V 100 150 µA

V

DS

I

=1mA

IN

I

=-1mA

IN

V

=13V; VIN=0V; Tj=25°C

DS

V

=25V; VIN=0V

DS

Value

6

-1.0

6.8 8

-0.3 30 75

Unit

V

µA

ON

Symbol Parameter Test Conditions Min Typ Max Unit

V

R

DS(on)

Static Drain-source On Resistance

=5V; ID=3.5A; Tj=25°C

IN

V

=5V; ID=3.5A

IN

60

120

mΩ

3/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC

Symbol Parameter Test Conditions Min Typ Max Unit

gfs (*) C

OSS

SWITCHING

Symbol Parameter Test Conditi ons Min Typ Max Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

t

(dI/dt)

Q

Forward Transconductanc e

VDD=13V; ID=3.5A 9 S

Output Capacitance VDS=13V; f=1MHz; VIN=0V 220 pF

Turn-on Delay Time Rise Time 470 1500 ns

r

Turn-off Delay Time 500 1500 ns Fall Time 350 1000 ns

f

Turn-on Delay Time Rise Time 4.6 14.0 µs

r

Turn-off Delay Time 5.4 16.0 µs Fall Time 3.6 11.0 µs

f

Turn-on Current Slope

on

Total Input Charge

i

=15V; ID=3.5A

V

DD

V

=5V; R

gen

gen=RIN MIN

(see figure 1)

=15V; ID=3.5A

V

DD

V

gen

=5V; R

gen

=2.2K Ω

(see figure 1)

=15V; ID=3.5A

V

DD

V

=5V; R V I

gen DD

gen

gen=RIN MIN

=12V; ID=3.5A; VIN=5V

=2.13m A (see figure 5)

=150Ω

100 300 ns

0.75 2.3 µs

6.5 A/µs

18 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions M in Typ Max Uni t

(*) Forward On Voltage ISD=3.5A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time ISD=3.5A; dI/dt=20A/µs

rr

Reverse Recovery Charge 0.28 µC

rr

Reverse Recovery Current 2.5 A

V

=30V; L= 20 0 µ H

DD

(see test circuit, figure 2)

220 ns

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Conditions M in Typ Max Uni t

I

lim

t

dlim

T

I

E

(*) Pulsed: Pu ls e duration = 300µs, duty c y c le 1.5%

Drain Current Limit VIN=5V; VDS=13V 6 9 12 A

=5V; VDS=13V

Step Response Current Limit

Overtemperature

jsh

Shutdown

Overtemperature Reset 135 °C

jrs

Fault Sink Current VIN= 5V; VDS=13V; Tj=T

gf

Sing l e Pu lse

as

Avala nche Energy

V

IN

starti ng T V

IN

=25°C; VDD=24V

j

=5V; R

gen=RIN MIN

(see figures 3 & 4)

jsh

=150Ω; L=24mH

4.0 µs

150 175 200 °C

15 mA

200 mJ

4/29

2

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

PROTECTION FEATURES

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to

50KHz. The only difference from the user’s standpoint is that a small DC current I 100µA) flows into the INPUT pin in order to supply

ISS

(typ.

the internal circuitry. The de vice integrates:

- OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics o f the Power MOSFET stage giv e this device unrivall ed ruggedne ss and energy handl ing capability. This feat ure is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to I voltage. When the current limiter is active, the

whatever the INPUT pin

lim

device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUI T PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensi ng eleme nt on the chip in the power st age ar ea ensures f ast, accurate detection of the junction temperature. Overtemperatur e cut-out occurs i n the range 1 50 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature fa lls of about 15°C be low shut-d own temperature.

- STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > T device tries to sink a diagnostic current Igf thro ug h

jsh

), the

the INPUT pin in order to indicate fault condition. If driven from a l ow impedance sou rce, this curre nt may be used in orde r to warn the contr ol circ uit of a device shut down. If the drive impeda nc e is h i gh enough so that the INPUT pin dri ver is not abl e to supply the current Igf, the INPUT pin will fall to 0V.

This will not however affect the device operation: no requirement is put on the current capability of t he IN PUT pin dr ive r e xcep t t o b e able to supply the normal operation drive current I

ISS

.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

5/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Figure 1: Switching Time Test Circuit for Resistive Load

V

gen

I

D

90%

V

D

R

gen

t

r

t

V

gen

d(on) t

10%

Figure 2: Test Circuit for Diode Recovery Times

A

D

I

OMNIFET

S

150Ω

B

R

gen

FAST DIODE

d(off)

I

t

f

A

B

OMNIFET

L=100uH

D

t

V

DD

6/29

1

V

gen

S

8.5 Ω

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Figure 3: Unclamped Inductive Load Test Circuits

R

V

IN

P

GEN

W

Figur e 5: Input Charge Test Circuit

V

IN

Figure 4: Unclamped Inductive Waveforms

7/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Source-Drain Diode Forward Characteristics

Vsd (mV)

1000

950

900

850

800

750

700

650

600

550 500

Vin=0V

0 2 4 6 8 101214

Id(A)

Derating Curve

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mOhm)

140

120

Tj=150ºC

100

80

Tj=25ºC

60

Tj=-40ºC

40

20

0

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

Id=6A Id=1A

Static Drain Source On Resistance

Rds(on) (mOhm)

500

450

400

350

300

250

200

150

100

50

0

0 0.25 0.5 0.75 1 1.25

Tj= - 40ºC

Vin=2.5V

Tj=25ºC

Tj=150ºC

Id(A)

Static Drain-Source On resistance Vs. Input Voltage

Rds(on) (mOhm)

120 110 100

90 80 70 60 50 40 30 20 10

0

33.544.555.566.57

Id=3.5A

Tj=150ºC

Tj=25ºC

Tj= - 40ºC

Vin(V)

Transconductance

Gfs (S)

20

18

16

14

12

10

8

6

4

2 0

Vds=13V

Tj=-40ºC Tj=25ºC

Tj=150ºC

012345678

Id(A)

8/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Static Drain-Source On Resistance Vs. Id

Rds(on) (mOhm)

140

120

100

80

60

40

20

0

00.511.522.533.544.555.56

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Vin=3.5V

Vin=5V

Vin=3.5V

Vin=5V Vin=3.5V

Vin=5V

Id(A)

Turn On Current Slope

di/dt(A/us)

8

7

6

5

4

3

2

1

0

100

200

300

400

500

Rg(ohm)

600

Vin=5V

Vdd=15V

Id=3.5A

700

800

900

1000

1100

Transfer Characteristics

Idon(A)

10

9

8

7

6

5

4

3

2

0

Vds=13.5V

1

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Vin(V)

Turn On Current Slope

di/dt(A/us)

2.25

2

1.75

1.5

1.25

1

0.75

0.5

0.25 100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

Vin=3.5V Vdd=15V

Id=3.5A

Tj=25ºC Tj=-40ºC Tj=150ºC

Input Voltage Vs. Input Charge

Vin(V)

8

7

6

5

4

3

2

1

0

0 5 10 15 20 25

Vds=12V

Id=3.5A

Qg(nC)

1

Turn off drain source voltage slope

dv/dt(V/us)

300

250

200

150

100

50

0

100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

Vin=5V

Vdd=15V

Id=3.5A

9/29