Datasheet VNS14NV04, VND14NV04, VND14NV04-1, VNP14NV04, VNB14NV04 Datasheet (SGS Thomson Microelectronics)

®

VNB14NV04 / VND14NV04

3

VND14NV0 4-1 / VNP14N V0 4 / VNS14N V0 4

/

“OMNIFE T II” :

FULLY AUTOPROTECTED POWER MOSFET

TYPE R

DS(on)

I

lim

V

clamp

VNB14NV04
VND14NV04
VND14NV04-1

35 mΩ 12 A 40 V
VNP14NV04
VNS14NV04

■ LINEAR CURRENT LIMITATION

■ THERM AL SHUT DOWN

■ SHORT CIRCUIT PROTECTION

■ INTEGRATED CLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTIC FEEDBACK THROUGH INPUT

PIN

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

■ COMPATIBLE WI TH STANDARD POWER

MOSFET

DESCRIPTION

The VNB14NV04, VND14NV04, VND14NV04-1,
VNP14NV04, VNS14NV04, are monolithic
devices de signed in ST Microelect ronics VIPo wer
M0-3 Technology, intended for replacement of
standard Power MOSFETS from DC up to 50KHz

BLO C K DIAGRA M

3

1

SO-8TO-252 (DPAK)

3

2

1

TO-220 TO-251 (IPAK)

2

1

D2PAK

3

1

ORDER CODES

PACKAGE TUBE T&R

2

PAK VNB14NV04 VNB14NV0413TR

D
TO-252 (DPAK) VND14NV04 VND14NV0413TR
TO-251 (IPAK) VND14NV04-1 ­TO-220 VNP14NV04

SO-8 VNS14NV04

-

-

applications. Built in thermal shutdown, linear
current limitation |and overvoltage clamp protect
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.

DRAIN

2

Overvoltage

Clamp

INPUT

1

Gate

Control

Over

Temperature

Linear

Current

Limiter

3

SOURCE

July 2003 1/29

1

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

Drain-source Voltage (VIN=0V) Internally Clamped V

DS

Input Voltage Internally Clamped V

V

IN

Input Current +/-20 mA

I

IN

Minimum Input Series Impedance 10 Ω
Drain Current Internally Limited A

I

D

Reverse DC Output Current -15 A

I

R

Electros tatic Discharge (R=1.5KΩ, C=100p F) 4000 V

ESD1

Electros tatic Discharge on output pin only

ESD2

(R=330 Ω, C=150pF)
Total Dissipation at Tc=25°C 4.6 74 74 74 74 W

P

tot

Maximum Swi tching Energy (L=0.4 m H;

MAX

RL=0Ω; V
Operating Junction Tem perature Internally limited °C

T

j

Case Oper ating Tempe rature Internally limited °C

T

c

Storage Temperature -55 to 150 °C

stg

=13.5V; T

bat

=150ºC; IL=18A)

jstart

R

V
V

E

V

IN MIN

T

CONNECTION DIAGRAM (TOP VIEW)

SO-8 DPAK TO-220 IPAK D

93 93 mJ

SO-8 Package (*)

Value

16500 V

2

PAK

Unit

SOURCE

SOURCE
SOURCE
INPUT

(*) For the pins configuration related to DPAK, D2PAK, IPAK, TO-220 see outlines at page 1.

1

4

CURRENT AND VOLTAGE CONVENTIONS

I

IN

R

IN

INPUT

SOURCE

V

IN

8

5

DRAIN

DRAIN
DRAIN
DRAIN
DRAIN

I

D

V

DS

2/29

1

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounted on a standar d s ingle-sided FR4 board wit h 0.5cm

Horizontal mounting and no artificial air flow.

Thermal R esistance Junction- case MAX 1.7 1.7 1 .7 1.7 °C/W

Thermal Resistance Junction-lead MAX 27 °C/W
Thermal R esistance Junction- am bient MAX 90 (*) 65 (*) 62 102 52 (*) ° C/W

SO-8 DPAK TO-220 IPAK D

2

of Cu (at least 35 µm thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF

Symbol Parameter Test Conditi ons Min Typ Max Unit

V

CLAMP

V

CLTH

V

INTH

I

V

INCL

I

DSS

ISS

Drain-source Clamp
Voltage
Drain-source Clamp

Threshold Voltage
Input Thre shold Volta ge VDS=VIN; ID=1mA 0.5 2.5 V
Supply Current from Input

Pin
Input-Source Clamp
Voltage

Zero Input Voltage Drai n
Current (VIN=0V)

V

=0V; ID=7A 40 45 55 V

IN

=0V; ID=2mA 36 V

V

IN

VDS=0V; VIN=5V 100 150 µA
IIN=1mA

I

=-1mA

IN

V

=13V; VIN=0V; Tj=25°C

DS

V

=25V; VIN=0V

DS

Value

-1.0

2

PAK

6

6.8 8

-0.3
30
75

Unit

V

µA

ON

Symbol Parameter Test Conditi ons Min Typ Max Unit

V

R

DS(on)

Static Drain-source On
Resistance

=5V; ID=7A; Tj=25°C

IN

V

=5V; ID=7A

IN

35
70

mΩ

3/29

1

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC

Symbol Parameter Test Condi tions Min Ty p Max Unit

gfs (*)

C

OSS

SWITCHING

Symbol P arameter Test Co nditions Min Typ Max Unit

t

d(on)

t

t

d(off)

t

t

d(on)

t

t

d(off)

t

(di/dt)

Q

Forward
Transconductance

VDD=13V; ID=7A 18 S

Output Ca pacitance VDS=13V; f=1MHz; VIN=0V 400 pF

Turn-on Delay Time
Rise Time 350 1000 ns

r

Turn-off Delay Time 450 1350 ns
Fall Time 150 500 ns

f

Turn-on Delay Time
Rise Time 9.7 30.0 µs

r

Turn-off Delay Time 9 25.0 µs
Fall Time 10.2 30.0 µs

f

Turn-on Current Slope

on

Total Input Charge

i

=15V; ID=7A

V

DD

V

=5V; R

gen

gen=RIN MIN

(see figure 1)

=15V; ID=7A

V

DD

V

gen

=5V; R

gen

=2.2K Ω

(see figure 1)

=15V; ID=7A

V

DD

V

=5V; R

gen

V

DD

gen=RIN MIN

=12V; ID =7A; VIN=5V; I

(see figure 5)

=10Ω

=10Ω

=2.13m A

gen

80 250 ns

1.5 4.5 µs

16 A/µs

36.8 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min Typ Max Unit

(*) For ward On Voltag e ISD =7A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time ISD=7A; di/dt=4 0A/µs

rr

Reverse Recovery Charge 0.8 µC

rr

Reverse Recovery Current 5 A

V

=30V; L= 20 0 µ H

DD

(see test circuit, figure 2)

300 ns

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Conditions Min Typ Max Unit

I

lim

t

dlim

T

jsh

T

I

gf

E

(*) Pulsed: Pu ls e duration = 300µs, dut y c y c le 1.5%

Drain Current Limit VIN=5V; VDS=13V 12 18 24 A

=5V; VDS=13V

Step Response Current
Limit

Overtemperature
Shutdown

Overtemperature Reset 135 °C

jrs

Fault Sink Current VIN=5V; VDS=13V; Tj=T
Sing l e Pu lse

as

Avala nche Energy

V

IN

starti ng T
V

IN

= 5V; R

=25°C; V

j

gen=RIN MIN

(see figures 3 & 4)

jsh

=24V

DD

=10Ω; L=24mH

45 µs

150 175 200 °C

10 15 20 mA

400 mJ

4/29

2

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

PROTECTION FEATURES

During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.

The device then behaves like a standard power
MOSFET and can be used as a switch from DC up

to 50KHz. The only difference from the user’s
standpoint is that a small DC current I
100µA) flows into the INPUT pin in order to supply

ISS

(typ.

the internal circuitry.
The de vice integrates:

- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged

avalanche characteristics o f the Power MOSFET
stage giv e this device unrivall ed ruggedne ss and
energy handl ing capability. This feat ure is mainly
important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to I

INPUT pin voltages. When the current limiter is

whatever the

lim

active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:

these are based on sensing the chip t emperatur e
and are not dependen t on the input voltage. The
location o f t he s ensing el emen t on the c h ip i n t he
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is auto matically
restarted when the chip temp eratu re fall s of about
15°C below shut-down temperature.

- STATUS FEEDBACK:
in the case of an overtem perature fault cond ition

(Tj > T
current Igf through the INPUT pin in order to

), the device tries to sink a diagnostic

jsh

indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive imped ance is high enough
so that the INPUT p in dri ver is no t abl e to su pply
the current Igf, the INPUT pin will fall to 0V. This

will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current I

ISS

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.

.

5/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Figure 1: Switching Time Test Circuit for Resistive L oad

V

D

R

gen

V

gen

I

D

90%

t

r

t

V

gen

d(on)

10%

Figure 2: Test Circuit for Diode Recovery Times

A

D

I

OMNIFET

S

25 Ω

B

R

FAST
DIODE

gen

t

d(off)

I

OMNIFET

t

f

t

t

A

L=100uH

B

D

V

DD

6/29

V

gen

S

8.5 Ω

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Figure 3: Unclamped Inductive Load Test Circuits

R

V

IN

P

GEN

W

Figure 5: Input Charge Test Circuit

IN

V

GEN

Figure 4: Unclamped Inductive Waveforms

ND8003

7/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Source-Drain Diode Forward Characteristics

Vsd (mV)

1000

950

900

850

800

750

700

650

Vin=0V

0 2 4 6 8 10 12 14 16 18

Id (A)

Derating Curve

Static Drain Source On Resistance

Rds(on) (mohms)

180

160

140

120

100

80

60

40

20

Vin=2.5V

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Tj=-40ºC

Tj=25ºC

Tj=150ºC

Id(A)

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mohms)

80

70

Tj=150ºC

60

50

Tj=25ºC

40

Id=12A
Id=1A

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mohms)

80

70

60

50

40

30

20

10

33.544.555.566.5

Vin(V)

8/29

Id=7A

Tj=150ºC

Tj=25ºC

Tj= - 40ºC

30

Tj=-40ºC

20

10

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

Transconductance

Gfs (S)

24
22

Vds=13V

20
18
16
14
12
10

8
6
4
2
0

012345678910111213

Tj=-40ºC

Tj=150ºC

Id(A)

Id=12A
Id=1A

Id=12A
Id=1A

Tj=25ºC

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Static Drain-Source On Resistance Vs. Id

Rds(on) (mohms)

70

60

Vin=5V

50

40

30

20

10

0

012345678910111213

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Id(A)

Turn On Current Slope

di/dt(A/us)

20

17.5

15

12.5

10

7.5

5

2.5

0

0 250 500 750 1000 1250 1500 1750 2000 2250

Rg(ohm)

Vin=5V

Vdd=15V

Id=7A

Transfer Characteristics

Idon (A)

18

16

14

12

10

8

6

4

2

0

2

Vds=13.5V

Tj=150ºC

2.25

2.5

2.7533.25

3.5

3.7544.25

Vin (V)

Turn On Current Slope

di/dt(A/us)

6

5.5
5

4.5
4

3.5
3

2.5
2

1.5

1

0.5
0

0 250 500 750 1000 1250 1500 1750 2000 2250

Rg(ohm)

4.5

4.7555.25

Vin=3.5V
Vdd=15V

Id=7A

Tj=25ºC

Tj=-40ºC

5.5

Input Voltage Vs. Input Charge

Vin (V)

8

7

6

5

4

3

2

1

0

Vds=12V

Id=7A

0 5 10 15 20 25 30 35 40 45

Qg (nC)

Turn off drain source voltage slope

dv/dt(V/us)

300
275
250
225
200
175
150
125
100

75
50
25

0

0

500

250

750

1000

1250

Rg(ohm)

1500

1750

Vin=5V

Vdd=15V

Id=7A

2000

2250

2500

9/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Turn Off Drain-Source Voltage Slope

dv/dt(v/us)

300
275
250
225
200
175
150
125
100

75
50
25

0

250

0

500

750

1000

1250

1500

Vin=3.5V
Vdd=15V

Id=7A

1750

Rg(ohm)

Switching Time Resistive Load

t(us)

11

10

Vdd=15V

9
8
7
6
5
4
3
2

1

0

Id=7A

Vin=5V

250

0

500

750

1000

1250

1500

tr

1750

2000

Rg(ohm)

Output Characteristics

2000

tf

td(off)

td(on)

2250

2250

2500

Capacitance Variations

C(pF)

1000

900

800

700

600

500

400

300

200

0 5 10 15 20 25 30 35

f=1MHz
Vin=0V

Vds(V)

Switching Time Resistive Load

t(ns)

1750

1500

1250

Vdd=15V

Id=7A

Rg=10ohm

1000

750

500

250

0

3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

td(on)

td(off)

tr

tf

Vin(V)

Normalized On Resistance Vs. Temperature

Id (A)

18
17
16
15
14
13
12

11

10

9
8
7
6
5
4
3
2

1

0

00.511.522.533.544.555.56

Vin=5V

Vin=4V

Vin=3V

Vin=2V

Vds (V)

10/29

Rds(on) (mOhm)

4

3.5

3

2.5

2

1.5

1

0.5

0

Vin=5V

Id=7A

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Normalized Input Threshold Voltage Vs.
Temperature

Vinth (V)

2

1.75

1.5

1.25

0.75

0.5

0.25

Vds=Vin

Id=1mA

1

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Step Response Current Limit

Tdlim(us)

55

52.5

50

47.5

45

42.5

40

37.5

35

32.5
30

7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5

Vdd(V)

Vin=5V

Rg=10ohm

Current Limit Vs. Junction Temperature

Ilim (A)

40

35

30

25

20

15

10

5

0

Vin=5V

Vds=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

11/29

111

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

DPAK Maximum turn off current versus load inductance

LMAX (A)

I

100

A

10

B

C

1

0.01 0.1 1 10

A = Single Pulse at T

B= Repetitive pulse at T
C= Repetitive Pulse at T

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

the temperature specified above for curves B and C.

VIN, I

L

=150ºC

Jstart

=100ºC

Jstart

=125ºC

Jstart

jstart

Demagnetization

(at beginning of each demagnetization) of every pulse must not exceed

L(mH)

Demagnetization

Demagnetization

t

12/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

D2PAK Maximum turn off current versus load inductance

LMAX (A)

I

100

A

B

10

C

1

0.01 0.1 1 10 100
L(mH)

A = Single Pulse at T

B= Repetitive pulse at T
C= Repetitive Pulse at T

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

the temperature specified above for curves B and C.

VIN, I

L

=150ºC

Jstart

=100ºC

Jstart

=125ºC

Jstart

jstart

Demagnetization

(at beginning of each demagnetization) of every pulse must not exceed

Demagnetization

Demagnetization

t

13/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

DPAK THERMAL DATA

DPAK PC Board

Layout condition of Rth and Zth measur em ents (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: from minimum pad la y-out to 8cm

R

Vs PCB copper area in open box free air condition

thj-amb

RTH j_amb (ºC /W)

90

80

70

60

50

40

2

).

14/29

30

0246810

PCB CU heat s ink area (c m^2)

SO-8 PC Board

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

SO-8 THERMAL DATA

R

thj-amb

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58m m , PCB thickness=2mm,
Cu thickness=35µm, Copper areas: 0.14cm

Vs PCB copper area in open box free air condition

2

, 0.6cm2, 1.6cm2).

SO-8 at 4 pins connected to TAB

RTHj_amb

(ºC/W)

110
105
100

95
90
85
80
75
70

00.511.522.5

PCB CU heatsink area (cm^2)

15/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

D2PAK THERMAL DATA

D2PAK PC Board

R

thj-amb

Layout condition of Rth and Zth measur em ents (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: from minimum pad la y-out to 8cm

Vs PCB copper area in open box free air condition

RTHj_amb (°C/W)

2

).

55

Tj-Tamb=50°C

50

45

40

35

16/29

30

0246810

PCB Cu heatsink area (cm^2)

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

DPAK Thermal Impedance Junction Ambient Single Pulse

ZT H (°C/W)

1000

100

10

1

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)

Thermal fitting model of an OMNIFET II in
DPAK

Tj

C1

R1 R2

Pd

C2

C3

R3

T_amb

C4

R4

C5

R5

C6

R6

Pulse calculation formula

Z

THδ

where

RTHδ Z

δ tpT⁄=

THtp

Thermal Parameter

Area/island (cm2) Footpri nt 6

R1 (°C/W) 0.1
R2 (°C/W) 0.35
R3 ( °C/W) 1.20
R4 (°C/W) 2
R5 (°C/W) 15
R6 (°C/W) 61 24
C1 (W.s/°C) 0.0006
C2 (W.s/°C) 0.0021
C3 (W.s/°C) 0.05
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.45
C6 (W.s/°C) 0.8 5

Footprint

2

6 cm

1 δ–()+⋅=

17/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

D2PAK Thermal Impe dance Junction Ambient Single Pulse

ZTH (°C/W)

1000

100

10

1

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)

Thermal fitting model of an OMNIFET II in
D2PAK

Tj

C1

R1 R2

Pd

C2

C3

R3

T_amb

C4

R4

C5

R5

C6

R6

Pulse calculation formula

Z

THδ

where

RTHδ Z

δ tpT⁄=

THtp

Thermal Parameter

Area/island (cm2) Footpri nt 6

R1 (°C/W) 0.1
R2 (°C/W) 0.35
R3 ( °C/W) 0.3
R4 (°C/W) 4
R5 (°C/W) 9
R6 (°C/W) 37 22
C1 (W.s/°C) 0.0006
C2 (W.s/°C) 2.10E-03
C3 (W.s/°C) 8.00E-02
C4 (W.s/°C) 0.45
C5 (W.s/°C) 2
C6 (W.s/°C) 3 5

Footprint

2

6 cm

1 δ–()+⋅=

18/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

TO-251 (IPAK) MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

A

E

= =

C2

L2

B2

= =

C

A3

A1

B6

L

B

B5

G

= =

D

B3

2

1 3

L1

19/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

2

D

PAK MECHANICAL DATA

DIM.

A4.4 4.6
A1 2.49 2.69
A2 0.03 0.23

B 0.7 0.93
B2 1.14 1.7

C 0.45 0.6

C2 1.23 1.36

D 8.95 9.35

D1 8

E10 10.4
E1 8.5

G 4.88 5.28

L 15 15.85
L2 1.27 1.4
L3 1.4 1.75

M2.4 3.2
R0.4

V2 0º8º

MIN. TYP MAX.

mm.

20/29

P011P6

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23

B 0.64 0.90
B2 5.20 5.40

C 0.45 0.60
C2 0.48 0.60

D 6.00 6.20
D1 5.1

E 6.40 6.60
E1 4.7

e2.28

G 4.40 4.60

H 9.35 10.10

L2 0.8
L4 0.60 1.00

R0.2
V2 0° 8°

Package W eight Gr. 0.29

MIN. TYP MAX.

mm.

P032P

21/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

TO-220 MECHANICAL DATA

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

M 2.6 0.102

DIA. 3.75 3.85 0.147 0.151


.

#

%




.



C

K

*

&

.


8


.

& /


.


.


.


(


(

'


8



)

*

)

(

22/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

SO-8 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050

M 0.6 0.023

F 8 (max.)

mm. inch

23/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)

12.20

9.75

16.90

A

C

5.08

1.60

3.50

All dimensions

are in millimeters

B

TAPE AND REEL SHIPMENT (suffix “13TR”)

Base Q.ty 50
Bulk Q.ty 500
Tube length (± 0. 5) 532

A 6
B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 24.4
N (min) 60
T (max) 30.4

All dimensions are in mm.

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986

Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 16
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartm ent Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

24/29

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

DPAK FOOTPRINT TUBE SHIPMENT (no suffix)

6.7

6.7 3.01.8 1.6

2.3

2.3

TAPE AND REEL SHIPMENT (suffix “13TR”)

A

Base Q.ty 75

C

Bulk Q.ty 3000
Tube length (± 0. 5) 532

A 6

B

B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986

Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartm ent Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

25/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

SO-8 TUBE SHIPMENT (no suffix)

B

C

Base Q.ty 100
Bulk Q.ty 2000
Tube length (± 0.5) 532

A

A 3.2
B 6
C (± 0.1) 0.6

All dimensions are i n m m .

TAPE AND REEL SHIPMENT (suffix “13TR”)

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are i n m m .

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) S tanda rd 481 rev. A, Feb 1986

Tape width W 12
Tape Hole Spacing P 0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

All dimensions are i n m m .

26/29

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

TO-220 TUBE SHIPMENT (no suffix)

A

Base Q.ty 50
Bulk Q.ty 1000
Tube length (± 0.5) 532

B

A 5.5
B 31.4
C (± 0.1) 0.75

All dimensions are in mm.

C

27/29

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

IPAK TUBE SHIP MENT (no suffix)

A

C

Base Q.ty 75
Bulk Q.ty 3000
Tube length (± 0.5) 532

B

A 6
B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

28/29

MECHANICAL POLARIZATI ON

VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04

Information furnished is believed to be acc ur ate and reliable. Howev er, STMicroelec tronics assumes no responsibility for the co nsequences
of use of such inf ormation nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any pa tent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to c hange without notice. This publication sup er s edes and replaces all information previo us ly s upplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved.

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29/29