SGS Thomson Microelectronics VNK10N06FM, VND10N06-1, VND10N06, VNP10N06FI Datasheet

VND10N06/VND10N06-1
VNP10N06FI/K10N06FM

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET

TYPE V

VND10N06
VND10N06-1
VNP10N06FI
VNK10N06FM

■ LINEAR CURRENT LIMITATION

■ THERMALSHUTDOWN

■ SHORT CIRCUIT PROTECTION

■ INTEGRATEDCLAMP

■ LOW CURRENTDRAWNFROM INPUT PIN

■ LOGIC LEVEL INPUT THRESHOLD

■ ESD PROTECTION

■ SCHMITT TRIGGER ONINPUT

■ HIGH NOISE IMMUNITY

clamp

60 V
60 V
60 V
60 V

R

DS(on )

0.3 Ω

0.3 Ω

0.3 Ω

0.3 Ω

I

lim

10 A
10 A
10 A
10 A

DESCRIPTION

The VND10N06, VND10N06-1, VNP10N06FIand
VNK10N06FM are monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harshenviroments.

3

1

DPAK

TO-252

ISOWATT220

3

2

1

IPAK

TO-251

3

2

1

SOT82-FM

BLOCK DIAGRAM (*)

(∗) SOT82-FM Pin Configuration: INPUT= 3; SOURCE = 1; DRAIN = 2.

October 1997

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VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM

ABSOLUTEMAXIMUM RATING

Symbol Parameter Value Unit

V

V

V

Drain-source Voltage ( Vin= 0) Int er nall y Clamped V

DS

Input V ol ta ge Int er nall y Clamped V

in

I

Input Current ± 20 mA

in

I

Drain Current Internally Limited A

D

I

Reverse DC Output Current -15 A

R

Elect r o st at ic Dischar ge ( C= 100 pF ,

esd

R=1. 5 KΩ)

P

T

Tot al Dis s ipation at Tc=25oC35279W

tot

T

Oper at i ng Junct ion T em perature Internally Limited

j

T

Case O perating T emp era tu r e Internally Limited

c

St orage Temperature -55 to 150

stg

THERMAL DATA

R

thj-case

R

thj-amb

Ther mal Resist an ce Juncti on-c ase
Max 3.5 4.5 14

Ther mal Resist an ce Juncti on-am b ient
Max 100 62.5 100

DPAK

IPAK

DPAK/IPAK ISOW ATT220 SOT82-FM

ISOWATT220 SOT82-FM

4000 V

o

o

o

C

o

C

o

C

C/W

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

CLAMP

Drain-source Clamp

ID= 200 mA Vin= 0 50 60 70 V

Volt age

V

Input Low Lev el

IL

ID= 100 µAVDS=16V 1.5 V

Volt age

3.2 V

-1
8

-0.3
11

250
100

V

I

I

V

DSS

IH

INCL

ISS

Input High Level
Volt age

Input-Source Reverse
Clamp Voltage

Zer o Inpu t V olt ag e
Drain Current (V

in

=0)

Supply Current f rom

RL=27Ω VDD=16V

=0.5V

V

DS

Iin=-1mA

=1mA

I

in

V

=50V Vin=V

DS

VDS<35V Vin=V

IL
IL

VDS=0V Vin= 5 V 150 300 µA

Input Pin

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

R

DS(on)

St at ic D rain- s our ce On
Resistance

Vin=7V ID=1A TJ< 125oC0.150.3Ω

V
V

µA
µA

2/14

VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM

ELECTRICAL CHARACTERISTICS (continued)

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

C

SWITCHING(**)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

(di/dt)

Q

SOURCE DRAINDIODE

Out put Capacitance VDS=13V f=1MHz Vin= 0 350 500 pF

oss

Turn-on Delay Time

t

Rise T ime

r

Turn-off Delay Time

t

Fall T ime

f

Turn-on Delay Time

t

Rise T ime

r

Turn-off Delay Time

t

Fall T ime

f

Tur n-on Current Slope VDD=16V ID=1A

on

Total Input Charge VDD=12V ID=1A Vin=7V 13 nC

i

VDD=16V Id=1A

=7V R

V

gen

gen

=10Ω

(see figure 3)

VDD=16V Id=1A

=7V R

V

gen

=1000Ω

gen

(see figure 3)

=7V R

V

in

gen

=10Ω

1100

550
200
100

1.2
1

1.6

1.2

1.5 A/µs

1600

900
400
200

1.8

1.5

2.3

1.8

ns
ns
ns
ns

µs
µs
µs
µs

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(∗)ForwardOnVoltage ISD=1A Vin=V

SD

t

rr

Reverse Recov ery

(∗∗)

Time
Reverse Recov ery

(∗∗)

Q

rr

I

= 1 A di/dt = 100 A /µs

SD

=30V Tj=25oC

V

DD

(see test circuit, figure 5)

IL

0.8 1.6 V

125

0.22

Charge

(∗∗)

I

RRM

Reverse Recov ery

3.5

Current

PROTECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

lim

t

dlim

T

jsh

T

jrs

E

as

(∗) Pulsed: Pulse duration = 300 µs,duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization

Drain Cur rent Limit Vin=7V VDS=13V 6 10 15 A

(∗∗) St ep Res pon se

Vin=7V VDSstepfrom0to13V 12 20 µs

Current Lim it

(∗∗) Overtem perat ure

150

Shut dow n
(∗∗) Overtemper at u r e Reset 135
(∗∗) S i ngle Pulse

Avalanche Energy

starting Tj=25oCVDD=24V

=7V R

V

in

=1KΩ L=10mH

gen

250 mJ

ns

µC

A

o

o

C

C

3/14

VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM

PROTECTION FEATURES

During Normal Operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path
as soon asV

IN>VIH

.

The device then behaves like a standard power
MOSFET and can be used as a switch from DC
to 50KHz. The only difference from the user’s
standpoint is that a small DC current (typically
150 µA) flows into the INPUT pin in order to
supply the internal circuitry.

During turn-off of an unclamped inductive load
the output voltage is clamped to a safe level by
an integrated Zener clamp between DRAIN pin
and the gateof the internal Power MOSFET.

In this condition, the Power MOSFET gate is set

to a voltage high enough to sustain the inductive
load currenteven ifthe INPUTpin is drivento 0V.

The device integrates an active current limiter
circuit which limits the drain current I

to I

D

lim

whateverthe INPUTpin Voltage.
When the current limiter is active, the device

operatesin thelinear region, so powerdissipation
may exceed the heatsinking capability. Both case
and junction temperatures increase, and if this
phase lasts long enough, junction temperature
may reach the overtemperature thresholdT

If T

reaches T

j

, the device shuts down

jsh

jsh

.

whatever the INPUT pin voltage. The device will
restart automaticallywhen T
T

jrs

has cooled down to

j

4/14

VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM

Thermal ImpedanceFor DPAK / IPAK

Thermal ImpedanceFor SOT82-FM

ThermalImpedanceFor ISOWATT220

DeratingCurve

OutputCharacteristics

StaticDrain-SourceOn Resistancevs Input
Voltage

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