SGS Thomson Microelectronics VND10B Datasheet

VND10B

DOUBLE CHANNEL

HIGH SIDE SMART POWER SOLID STATE RELAY

PRELIMINARY DATA

TYPE V

VND10B 40 V 0.1 Ω 3.4 A 26 V

■ OUTPUT CURRENT (CONTINUOUS):

DSS

R

DS(on)

In(*) V

CC

14 A @ Tc=85oC PER CHANNEL

■ 5V LOGIC LEVEL COMPATIBLEINPUT

■ THERMAL SHUT-DOWN

■ UNDER VOLTAGE PROTECTION

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVELOADFAST DEMAGNETIZATION

■ VERYLOWSTAND-BY POWER DISSIPATION

DESCRIPTION

The VND10B is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuck-on to VCC.

BLOCK DIAGRAM

HEPTAWATT

(vertical)

HEPTAWATT

(horizontal)

HEPTAWATT

(in-line)

ORDER CODES:

HEPTAWATT vertical VND10B
HEPTAWATT horizontal VND10B (011Y)
HEPTAWATT in-line VND10B (012Y)

(*) In= Nominal current accor ding to ISO defini t ion f or high side automoti ve swit ch (see note 1)

September 1994

1/11

VND10B

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Uni t

V

(BR)DSS

I

OUT

(RMS ) R MS Out put Current at Tc=85oCandf>1Hz 14 A

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

CONNECTION DIAGRAM

Drain - So urc e B reakdown Voltage 40 V
Out put Current (cont .) at Tc=85oC14A

Reverse Output Current at Tc=85oC-14A

R

Input Curre nt ±10 mA

IN

Reverse S upply V olt age -4 V

CC

St at us Current ±10 mA
Electrost atic Dischar ge (1.5 kΩ, 100 pF ) 2000 V
Powe r Dissipation at Tc=25oC75W

tot

Junction Operating T emperature -40 to 15 0

j

St or a ge Temper ature -55 to 15 0

stg

o

C

o

C

CURRENT AND VOLTAGE CONVENTIONS

2/11

VND10B

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction -c as e Max

Thermal Resistance Junct ion-ambient Max

1.65
60

ELECTRICAL CHARACTERISTICS (8 < VCC< 16 V; -40 ≤ Tj≤ 125oC unless otherwise specified)
POWER

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

In( *) Nomi na l Curr ent T

R

I

V

DS(MAX)

R

Supply Voltage 6 13 26 V

CC

=85oCV

c

On State Resistance I

on

Supply Cur rent Of f S ta te Tj=25oCVCC= 13 V 35 100 µ A

S

Maximum Voltage D r op I
Out put to GND i n ternal

i

OUT=InVCC

=13A Tj=85oCVCC=13V 1.2 2 V

OUT

Tj=25oC51020KΩ

≤ 0.5 VCC=13V 3.4 5.2 A

DS(on)

=13V Tj=25oC 0.065 0.1 Ω

Im pedance

SWITCHING

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(^) Turn-on Delay Time Of

t

d(on)

Out put Current

t

(^) Rise Time Of Ou t put

r

Current

t

(^) Turn- of f Delay Time Of

d(off)

Out put Current

t

(^) Fall Time Of Output

f

Current
(di/dt)
(di/dt)

Turn-on C urrent S lope R

on

Turn-off Current Slope R

off

R

=2.7Ω 5 35 200 µs

out

R

=2.7Ω 28 110 360 µs

out

R

=2.7Ω 10 140 500 µs

out

R

=2.7Ω 28 75 360 µs

out

=2.7Ω 0.003 0.1 A/µs

out

=2.7Ω 0.005 0.1 A/µs

out

o
o

C/W
C/W

LOGIC INPUT

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

IL

V

IH

V

I(hyst.)

I

IN

V

ICL

Input Low Level

Volt age

Input High Level

3.5 ( •)V

Volt age

Input Hys teresis

0.2 0.9 1.5 V

Volt age

Input Curre nt VIN=5V Tj=25oC 30 100 µ A

Input Clamp V olt a ge IIN=10mA

IIN=-10mA

56

-0.7

1.5 V

7V

V

3/11

VND10B

ELECTRICAL CHARACTERISTICS (continued)

PROTECTION AND DIAGNOSTICS

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

STAT

St at us Volta ge Output

Low

V

USD

Under Volta ge Shut

Down

V

SCL

T

TSD

St at us Clamp Voltage I

Thermal Shut-dow n

Tem perature

T

SD( hyst.)

Thermal Shut-dow n

Hysteresis

T

V

I

OL

Reset Tem perature 125

R

Open Voltage Level Off-State (note 2) 2.5 4 5 V

OL

Open Load Cu r rent

Level

t

povl

t

pol

(*) In= Nominal current accor ding to ISO defini t ion f or high side automoti ve swit ch (see note 1)
(^) See swit c hing ti m e w av eform
(•)TheVIHis internal ly clamped at 6V about. It is possible t o connect this pin to an higher voltage via an external r es istor
cal culated to not exceed 10 mA at the i nput pin.
note 1: The Nominal Current is t he current at Tc=85oC for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2: I
note 3: t

St at us Delay (note 3) 5 10 µs

St at us Delay (note 3) 50 500 2500 µs

=(VCC-VOL)/R

OL(off)

: ISO definition

povltpol

OL

I

=1.6mA 0.4 V

STAT

3.5 4.5 6 V

STAT

I

STAT

=10mA
=-10mA

56

-0.7

7V

140 160 180

50

On-State 0.6 0.9 1.4 A

V

o

C

o

C

o

C

Note 2 Relevant Figure Note 3 Relevant Figure

4/11