SGS Thomson Microelectronics VN920SO, VN920-B513TR, VN920-B5, VN920 Datasheet

®

May 2003 1/23

UNDERVOLTAGE

OVERTEMPERATURE

V

CC

GND

INPUT

OUTPUT

OVERVOLTAGE

CURRENT LIMITER

LOGIC

DRIVER

Power CLAMP

V

CC

CLAMP

VDS LIMITER

DETECTION

K

I

OUT CURRENT

SENSE

VN920

/ VN920- B5 / VN920 SO

SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY

■ CMOS COMPATIBLE INPUT

■ PROPORTIONAL LOAD CURRENT SENSE

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUTDOWN

■ CURRENT LIMITATION

■ PROTECTION AGAI NST LOSS OF GROUND

AND LOSS OF V

CC

■ VERY LOW ST AND -BY P OWER DI SSIPA TION

■ REVERSE BA TTERY PROTECTION (*)

DESCRIPTION

The VN920, VN920-B5, VN920SO is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to

ground. Active VCC pin voltage clamp protects the device a gainst low energy spi kes (see ISO7637

transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protect the device against overload. The device integrates an analog current sense output which delivers a current proportional to the load cu rren t. Device a utoma ti cally turn s off in case of ground pin disconnection.

TYPE R

DS(on)

I

OUT

V

CC

VN920 VN920-B5 VN920SO

16mΩ 30 A 36 V

PENTAWATT

P2PAK

SO-16L

ORDER CODE S

PACKAGE TUBE T&R

PENTAWATT

VN920

P2PAK VN920 -B5 VN920-B51 3TR SO-16L V N920 SO VN920SO13TR

BLOCK DIAGRAM

(*) See application schematic at page 8

2/23

VN920 / VN920-B5 / VN920SO

ABSOLUTE MAXIMUM RATI NG

CONNECTION DIAGRAM (TOP VIEW)

CURRENT AND VOLTAGE CONVENTIONS

Symbol Parameter

Value

Unit

PENTAWATT P

2

PAK SO-16L

V

CC

DC Supply Voltage 41 V

- V

CC

Reverse DC Supply Voltage - 0.3 V

- I

GND

DC Reverse Ground Pin Current - 200 mA

I

OUT

DC Output Current Internally Limited A

- I

OUT

Reverse DC Ou tput Current - 21 A

I

IN

DC Input Current +/- 10 mA

V

CSENSE

Current Sense Maximum Voltage -3

+15

V V

V

ESD

Electrostatic Discharge (Human Bo dy Model: R=1.5KΩ; C=100pF)

- INPUT

- CURRENT SENSE

- OUTPUT

- V

CC

4000 2000 5000 5000

V V V V

E

MAX

Maxim u m Sw itching Energy (L=0.25m H ; R

L

=0Ω; V

bat

=13.5V ; T

jstart

=150ºC ; IL=45A)

364 352 mJ

P

TOT

Power Diss ipation TC≤25°C 96.1 96.1 8.3 W

T

j

Junction Operating Temperature Internally limited °C

T

c

Case Operating Temperature - 40 to 150 °C

T

STG

Storage Temperat ure - 55 to 150 °C

1

5 4

3 2

1

V

CC

GND

INPUT

C

SENSE

OUTPUT

PENTAWATT

3 2 1

4

5

V

CC

GND

INPUT

C

SENSE

OUTPUT

P2PAK

I

S

I

GND

V

CC

V

CC

V

SENSE

OUTPUT

I

OUT

CURRENT SENSE

I

SENSE

INPUT

I

IN

V

IN

V

OUT

GND

V

CC

OUTPUT

V

CC

OUTPUT

V

CC

N.C.

C

SENSE

INPUT

V

CC

GND

N.C.

1

8

9

16

SO-16L

3/23

VN920 / VN920-B5 / VN920SO

THERMAL DATA

(*) When mounted on a standard single-sid ed FR-4 board with 0.5cm2 of Cu (at leas t 35µ m t hick) . (**) When mounted on a standa r d s ingle-sided FR-4 board with 0.5cm

2

of Cu (at least 35µm thick) connected to all VCC pins.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C unless otherwise specified) POWER

SWITCHING (VCC=13V)

LOGIC INPUT

Symbol Parameter

Value

Unit

PENTAWATT P

2

PAK SO-16L

R

thj-case

Thermal R esistance Junction- case Max 1.3 1.3 °C/W

R

thj-lead

Thermal Resistance Junction-lead Max 15 °C/W

R

thj-amb

Thermal Resistance Junction-ambient M ax 61.3 51.3 (*) 65 (**) °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

Operating Supply Voltage 5.5 13 36 V

V

USD

Undervoltage Shut-down 3 4 5.5 V

V

OV

Overvolt age Shut-down 36 V

R

ON

On State Resistance

I

OUT

=10A; Tj=25°C

I

OUT

=10A

I

OUT

=3A; VCC=6V

16 32 55

mΩ mΩ mΩ

V

clamp

Clam p Vo ltage ICC=20mA (See note 1) 41 48 55 V

I

S

Supply Current

Off State; V

CC

=13V; VIN=V

OUT

=0V

Off State; V

CC

=13V; VIN=V

OUT

=0V; Tj=25°C

On State; V

CC

=13V; VIN=5V; I

OUT

=0A;

R

SENSE

=3.9KΩ

10 10

25 20

5

µA µA

mA

I

L(off1)

Off State Output Curren t VIN=V

OUT

=0V 0 50 µA

I

L(off2)

Off State Output Curren t VIN=0V; V

OUT

=3.5V -75 0 µA

I

L(off3)

Off State Output Curren t VIN=V

OUT

=0V; Vcc=13V; Tj=125°C 5 µA

I

L(off4)

Off State Output Curren t VIN=V

OUT

=0V; Vcc=13V; Tj=25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

Turn-on Delay Time RL=1.3Ω (s ee figure 2) 50 µs

t

d(off)

Turn-off Dela y Ti me RL=1.3Ω (see figure 2) 50 µs

dV

OUT

/dt

(on)

Turn-on Voltage Sl ope RL=1.3Ω (s ee figure 2)

See

relative

diagram

V/µs

dV

OUT

/dt

(off)

Turn-off Voltage Slope RL=1.3Ω (see figure 2)

See

relative

diagram

V/µs

Symbol Parameter Test Co nditions Min Typ Max U nit

V

IL

Input Low Level 1.25 V

I

IL

Low Level Input Current VIN=1.25V 1 µA

V

IH

Input High Level 3.25 V

I

IH

High Level Input Current VIN=3.25V 10 µA

V

I(hyst)

Input Hyst eresis Voltage 0.5 V

V

ICL

Input Clamp Voltage

I

IN

=1mA

I

IN

=-1mA

66.8

-0.7

8V

V

1

Note 1: V

clamp

and VOV are correlated. Typical difference is 5V .

4/23

VN920 / VN920-B5 / VN920SO

1

ELECTRICAL CHARACTERISTICS (continued) CURRENT SENSE (9V≤ VCC≤16V) (See Fig. 1)

PROTECTIONS

Note 2: current sense signal delay after positive input sl ope

Note: sense pin doesn’t have to be left floating.

Symbol Parameter Test Conditions Min Typ Max Unit

K

1

I

OUT/ISENSE

I

OUT

=1A; V

SENSE

=0.5V;

T

j

= -40°C...150°C

3300 4400 6000

dK1/K1Current Se nse Ratio Drift

I

OUT

=1A; V

SENSE

=0.5V;

T

j

= -40°C...+150°C

-10 +10 %

K

2

I

OUT/ISENSE

I

OUT

=10A; V

SENSE

=4V; Tj=-40°C

T

j

=25°C... 150°C

4200 4400

4900 4900

6000 5750

dK2/K2Current Se nse Ratio Drift

I

OUT

=10A; V

SENSE

=4V;

T

j

=-40°C.. .+150°C

-8 +8 %

K

3

I

OUT/ISENSE

I

OUT

=30A; V

SENSE

=4V; Tj=-40°C

T

j

=25°C... 150°C

4200 4400

4900 4900

5500 5250

dK3/K3Current Se nse Ratio Drift

I

OUT

=30A; V

SENSE

=4V;

T

j

=-40°C.. .+150°C

-6 +6 %

I

SENSEO

Analog Sense Leakage Current

V

CC

=6...16V; I

OUT

=0A;V

SENSE

=0V;

T

j

=-40°C.. .+150°C

010µA

V

SENSE

Max Analog Sense Output Voltage

V

CC

=5.5V; I

OUT

=5A; R

SENSE

=10KΩ

V

CC

>8V; I

OUT

=10A; R

SENSE

=10KΩ

2 4

V V

V

SENSEH

Sense Voltage in Overtemperature conditions

VCC=13V; R

SENSE

=3.9KΩ 5.5 V

R

VSENSEH

Analog Sense Output Impedance in Overtemperature Condition

VCC=13V; Tj>T

TSD

; Output Open 400 Ω

t

DSENSE

Current sense delay response

to 90% I

SENSE

(see note 2) 500 µs

Symbol Parameter Test Conditions Min Typ Max Unit

T

TSD

Shut-down Temperature 150 175 200 °C

T

R

Reset Temperature 135 °C

T

hyst

Thermal Hysteresis 7 1 5 °C

I

lim

DC Short Circuit Current

V

CC

=13V

5V<V

CC

<36V

30 45 75

75

A A

V

demag

Turn-off Output Clamp Voltage

I

OUT

=2A; VIN=0V; L= 6m H VCC-41 VCC-48 VCC-55 V

V

ON

Output Voltage Drop Limitation

I

OUT

=1A; Tj=-40°C....+150°C 50 mV

5/23

VN920 / VN920-B5 / VN920SO

1

Figur e 2: Switching Characteristics (Resistive load RL=1.3Ω)

02468101214161820222426283032

3000

3500

4000

4500

5000

5500

6000

6500

min.Tj=-40°C

max.Tj=-40°C

min.Tj=25...150°C

max.Tj=25...150°C

typi cal value

Figure 1: I

OUT/ISENSE

versus I

OUT

I

OUT

(A)

I

OUT/ISENSE

V

OUT

dV

OUT

/dt

(on)

t

r

80%

10%

t

f

dV

OUT

/dt

(off)

I

SENSE

t

90%

t

d(off)

INPUT

t

90%

t

d(on)

t

DSENSE

6/23

VN920 / VN920-B5 / VN920SO

1

TRUTH TABLE

ELECTRICAL TRANS IENT REQUIREMENTS

CONDITIONS INPUT OUTPUT SENSE

Normal op eration

L

H

L

H

0

Nominal

Overtemperature

L

H

L L

0

V

SENSEH

Undervoltage

L

H

L L

0 0

Overvoltage

L

H

L L

0 0

Short circuit to GND

L H H

L L L

0

(T

j<TTSD

) 0

(T

j>TTSD

) V

SENSEH

Short circuit to V

CC

L H

H H

0

< Nominal

Negative output voltage clam p L L 0

ISO T/R 7637/1

Test Pulse

TEST LEVELS

I II III IV Delays and

Impedance

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -5 0 V - 100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0. 01

Ω

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

Ω

ISO T/R 7637/1

Test Pulse

TEST LEVELS RESULTS

I II III IV

1CCCC

2CCCC 3aCCCC 3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All functions of the device are per formed as de signed after exposure to disturbance. E One or more functions of the device is not performed as d esigned after exposure to disturbance

and cann ot be returned to proper operation wi thout replacing the device.

7/23

VN920 / VN920-B5 / VN920SO

SENSE

INPUT

NORMAL OPERATION

UNDERVOLTAGE

V

CC

V

USD

V

USDhyst

INPUT

OVERVOLT AGE

V

CC

SENSE

INPUT

SENSE

Figure 3: W aveforms

LOAD CURRENT

LOAD CURREN T

OVERTEMPERATURE

INPUT

SENSE

T

TSD

T

R

T

j

LOAD CURRENT

V

OV

V

OVhyst

VCC > V

USD

SHORT TO GROUND

INPUT

LOAD CURRENT

SENSE

LOAD VOLTAGE

INPUT

LOAD VOLTAGE

SENSE

LOAD CURRENT

<Nominal

SHORT TO V

CC

I

SENSE

=

R

SENSE

V

SENSEH