Datasheet VN920DSO, VN920D-B513TR, VN920D-B5 Datasheet (SGS Thomson Microelectronics)

®

VN920D-B5

/ VN920DSO

HIGH SIDE DRIVER

TYPE R

VN920D-B5 VN920DSO

■ CMOS COMPATIBLE INPUT

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

DS(on)

18 mΩ 30 A 36 V

I

OUT

V

CC

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VN920D-B5, VN920DSO are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the

device against low ene rgy spikes (see ISO7637

BLOCK DIAGRAM

P2PAK

SO-16L

ORDER CODES

PACKAGE TUBE T&R

SO-16L VN920DSO VN920DSO13TR P2PAK VN920D-B5 VN920D-B513TR

transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart protect the device against overload.

The device detects open load condition both is on and off state. Output shorted to VCC is detected in

the off state. Device automatically turns off in case of ground pin disconnection.

V

CC

OVERVOLTAGE

DETECTION

UNDERVOLTAGE

DETECTION

Power CLAMP

DRIVER

CURRENT LIMITER

ON STATE OPENLOAD

DETECTION

OFF STA TE OPENLOAD

AND OUTPUT SHORTED TO V

DETECTION

OUTPUT

CC

GND

INPUT

STATUS

OVERTEMPERATURE

DETECTION

(*) See application schematic at page 8

V

CC

CLAMP

LOGIC

Janua ry 20 03 1/22

VN920D-B5 / VN920DSO

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

DC Supply Vol tage 41 V

V

CC

- V

- I

I

V

E

Reverse DC Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA

GND

DC Output Current Internally Limited A

I

OUT

Reverse DC Ou tput Current - 25 A

OUT

DC Input Current +/- 10 mA

I

IN

DC Status Current +/- 10 mA

STAT

Electro static Discharge (Hu m an Body Mode l: R=1.5KΩ; C=100pF)

- INPUT

- CURRENT SENSE

ESD

- OUTPUT

- V

CC

Maximum Switching Energy

MAX

(L=0.25mH; R

Power Diss ip ation TC=25°C 96.1 8.3 W

P

tot

Junction Operating Temperature Internally Limited °C

T

j

Case Oper ating Temperature - 40 to 150 °C

T

c

Storage Temperature - 55 to 150 °C

T

stg

=0Ω; V

L

=13.5V; T

bat

jstart

=150ºC; IL=45A)

Value

2

P

PAK SO-16L

4000 4000 5000 5000

364 352 mJ

Unit

V V V V

CONNECTION DIAGRAM (TOP VIEW)

5

OUTPUT

4

STATUS

3

V

CC

2

INPUT

1

GND

P2PAK

CURRENT AND VOLTAGE CONVENTIONS

I

IN

INPUT

I

STAT

STATUS

V

IN

V

STAT

V

CC

GND

V N.C. GND INPUT STA T US N.C. N.C. V

OUTPUT

I

GND

CC

1

8

V

16

9

CC

OUTPUT OUTPUT OUTPUT OUTPUT OUTPUT OUTPUT V

CC

SO-16L

I

S

I

OUT

V

CC

V

OUT

2/22

VN920D-B5 / VN920DSO

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at leas t 35µ m t hick) . (**) When mounted on FR4 printed circuit board with 0.5cm

Thermal Resistanc e Junctio n-case Max 1.3 - °C/W Thermal R esistanc e Junction-lead Max - 15 °C/W Thermal R esistanc e Junction-ambient Max 51.3 (*) 65 (**) °C/W

2

of Cu (at leas t 35µ thick) connected to all VCC pins.

P

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C unless otherwise specified)

POWER

Symbol Parameter Test Conditions Min Typ Max Unit

CC

OV

ON

S

Operating Supply Voltage 5.5 13 36 V Undervolt age Shut-down 3 4 5.5 V Undervolt age Shut-down

hysteresis Overvolt age Shut-down 36 V

=10A; Tj=25°C

I

OUT

On State Resistance

Supply Current

Off State Output Current VIN=V Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V

I

=10A

OUT

I

=3A; VCC=6V

OUT

Off Stat e; V Off Stat e; V

Tj=25°C

On State; V

OUT

OUT OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

=13V; VIN=5V; I

CC

OUT OUT

=0V =0V;

OUT

=0A

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; VCC=13V; Tj =125°C 5 µA =0V; VCC=13V; Tj =25°C 3 µA

V

USD

V

USDhyst

V

R

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Value

2

PAK SO-16L

0.5 V

10

18 36 50 25

20

5

Unit

mΩ mΩ mΩ

µA

mA

SWITCHING (VCC=13V)

Symbol Parameter Test Conditions Min Typ Max Unit

(on)

(off)

Turn-on Delay Time RL=1.3Ω 50 µs Turn-off Delay Time RL=1.3Ω 50 µs

/

Turn-on Voltage Slope RL=1.3Ω

See

relative

diagram

/

Turn-off Voltage Slope RL=1.3Ω

See

relative

diagram

dV

t

d(on)

t

d(off)

dt

OUT

INPUT PIN

Symbol Parameter Test Conditions Min Typ M ax Unit

IL

IH

ICL

Input Low Level 1.25 V Low Level Input Current VIN=1.25V 1 µA Input High Level 3.25 V High Level Input Current VIN=3.25V 10 µA Input Hyst eresis Vo lt age 0.5 V

I

Input Clamp Voltage

IN

I

IN

=1mA =-1mA

66.8

-0.7

8V

V

I(hyst)

V

I

V

I

V/µs

V

3/22

1

VN920D-B5 / VN920DSO

ELECTRICAL CHARACTERISTICS (continued)

STATUS PIN

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Status Low Output Voltage I Status Leakage Current Normal Operation V Status Pin Input

Capacitance Status Clamp Voltage

PROTECTIONS

Symbol Parameter Test Conditions Min Typ Max Unit

T

t

V

demag

TSD

T

hyst

SDL

I

lim

Shut-down Temperature 150 175 200 °C

Reset Temp erature 135 °C

R

Ther ma l Hy steresi s 7 15 °C Statu s delay in overload

condition Current limitation Turn-off Output Clamp

Voltage

=1.6mA 0.5 V

STAT

Normal Operation V

=1mA

I

STAT

I

=-1mA

STAT

T

j>TTSD

=5V 10 µA

STAT

=5V 100 pF

STAT

66.8

-0.7

20 µs

30 45 75

5.5V<V I

OUT

CC

<36V

75

=2A; VIN=0V; L= 6m H VCC-41 VCC-48 VCC-55 V

8V

V

A A

OPENLOAD DETECTION

Symbol Parameter Test Conditions Min Typ Max Unit

OL

Openload ON State Detectio n Threshol d Openload ON State Detection Delay Openload OFF State Voltage Det ection Threshold Openl o ad Detection De lay

at Turn Off

V

> V

OUT

t

DOL(off)

=5V 300 500 700 mA

V

IN

=0A 250 µs

I

OUT

V

=0V 1.5 2.5 3.5 V

IN

1000 µs

OVERTEMP STATUS TIMING

I

< I

OUT

DOL(on)

OL

V

IN

STAT

t

SDL

Tj > T

TSD

t

SDL

OL

t

I

OL

t

DOL(on)

V

t

DOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

V

IN

V

STAT

4/22

2

Switching time Waveforms

V

OUT

dV

/dt

OUT

(on)

V

IN

t

d(on)

80%

10%

t

d(off)

VN920D-B5 / VN920DSO

90%

dV

/dt

OUT

(off)

t

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

Cur rent Limitatio n

Overtemperature

Undervoltage

Overvoltage

Output Voltage > V

Output Current < I

OL

L

H

L H H

L H

L X X

< T

(T

j

> T

(T

j

L L

H H

L H

TSD

H H

H

) H

) L

H

L

X X

H H

L

H H

L

5/22

VN920D-B5 / VN920DSO

ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN

ISO T/R 7637/1

Test Pulse

1 -25 V -50 V -75 V -100 V 2 m s 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V - 50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

ISO T/R 7637/1

Test P ulse

1CCCC

2CCCC 3aCCCC 3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All functions of the device are performe d as designed after exposure to disturbance. E One or more function s of the dev ice is not p erformed as design ed after ex posure to disturbance

and canno t be retur ned to proper operation without repla cing the device.

I II III IV Delays and

IIIIIIIV

TEST LEVELS

TEST LEVEL S RESULTS

Impedance

Ω

6/22

Figure1: Waveforms

INPUT LOAD VOLTAGE STATUS

V

CC

INPUT

LOAD VOLTAGE STATUS

V

CC

INPUT LOAD VOLTAGE STATUS

NORMAL OPERATION

UNDERVOLTAGE

V

USD

OVERVOLTAGE

V

CC<VOV

V

USDhyst

undefined

VCC>V

VN920D-B5 / VN920DSO

OV

INPUT LOAD VOLTAGE

STATUS

INPUT LOAD VOLTAGE STATUS

T

j

INPUT

LOAD CURRENT

STATUS

OPEN LOAD wi th external pull-up

V

OUT>VOL

V

OL

OPEN LOAD without external pull-up

T

TSD

T

R

OVERTEMPERATURE

7/22

VN920D-B5 / VN920DSO

APPLICATION SCHEMATIC

+5V

µ

R

C

R

prot

+5V

STA T US

INPUT

GND PROTECTION NETWORK AGAINST REVERSE BATTERY

Soluti on 1: Resistor in the ground line (R can be us ed with any t ype of load.

The fo llowin g is an indica tion on how to dim ension the

resistor.

R

GND

1) R

2) R

where -I be foun d in the abs olute max i mum rating se ct i on of the of

≤ 600mV / (I

GND

≥ (−VCC) / (-I

GND

is the DC re vers e grou nd pi n cu rren t an d can

GND

S(on)ma x

)

GND

).

the devic e’s datasheet. Power Dissipation in R

battery situations) is:

= (-VCC)2/R

P

D

GND

(when VCC<0: during reverse

GND

This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calcul ated with form ula (1) wher e I sum of the maximum on-state currents of the different

S(on)max

devices. Please note that if the microprocessor ground is not

common with the device ground then the R produce a shift (I and the status output values. This shift will vary

S(on)max

* R

) in the input thresholds

GND

depending on many devices are ON in the case of several high side drivers sharing the same R

GND

If the calculated power dissipation leads to a large resistor or several devices hav e to share the sa me resisto r then the ST suggest to utilize Solution 2 (see below).

Solution 2: A resistor (R

D

GND

A diode (D

=1kΩ) sh ould b e insert ed in paral lel to

GND

if the device will be driving an inductive load.

) in the gr ound line.

GND

only). This

GND

becomes t he

GND

.

will

V

CC

D

OUTPUT

GND

R

V

GND

D

GND

This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of

j

the ground network wi ll produce a shift (

600mV) in t he input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resi stor net work.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are grea ter tha n the ones sh own in the ISO T/R 7637/1 table.

C I/Os PROTECTION:

µ

If a ground protection network is used and negative transient are p resent on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (R in lin e to prevent the µC I/Os pins to latch-up.

The value of these resistors is a compromise between the leakage c urrent of µC an d the current required by the HSD I/Os ( Input le vels comp atibilit y) wi th the lat ch-up li mit of µC I/Os.

≤ R

-V

CCpeak/Ilatchup

Calculation example:

CCpeak

prot

= - 100V an d I

≤ 65kΩ.

prot

For V 5kΩ ≤ R Recommended R

≤ (V

prot

OHµC-VIH-VGND

≥ 20mA; V

latchup

value is 10kΩ.

) / I

OHµC

ld

IHmax

≥ 4.5V

prot

)

8/22

1

VN920D-B5 / VN920DSO

Off State Output Current

IL(off1) (u A)

9

8

7

6

5

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150 17 5

Tc (°C)

Input Clamp Voltage

Vicl (V)

8

7.8

7.6

7.4

7.2

7

6.8

6.6

6.4

6.2 6

Iin=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

High Level Input Current

Iih (uA)

5

4.5

3.5

2.5

1.5

0.5

Vin=3.25V

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150 175

Input High Level

Vih (V)

3.6

3.4

3.2

3

2.8

2.6

2.4

2.2

2

-50 -25 0 25 50 75 100 125 150 175

Input Hysteresis VoltageInput Low Level

Tc (°C)

Vil (V)

2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Vhyst (V)

1.5

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

9/22

11

VN920D-B5 / VN920DSO

Overvoltage Shutdown

I

LIM

Vs. T

case

Vov (V)

50

48

46

44

42

40

38

36

34

32 30

-50 -25 0 25 50 75 100 125 150 175

Ilim (A)

100

90

80

70

60

50

40

30

20 10

Vcc=13V

0

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Turn-on Voltage Slope Turn-off Voltage Slope

dVout/dt(on) (V/ms)

700

650

600

550

500

450

400

350

300

250

-50 -25 0 25 50 75 100 125 150 175

Vcc=13V

Rl=1.3Ohm

Tc (ºC)

dVout/dt(off) (V/ms)

550 500 450 400 350 300 250 200 150 100

50

Vcc=13V

Rl=1.3Ohm

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Tc (°C)

On State Resistance Vs. T

case

Ron (mOhm)

50

45

40

35

30

25

20

15

10

5 0

-50 -25 0 25 50 75 100 125 150 175

Iout=10A

Vcc=8V; 36V

Tc (ºC)

10/22

On State Resistance Vs. V

CC

Ron (mOhm)

50

45

40

35

30

25

20

15

10

5 0

5 10152025303540

Iout=10A

Tc=150ºC

Tc=25ºC

Tc= -40ºC

Vcc (V)

VN920D-B5 / VN920DSO

Status Leakage Current

Ilstat(µA)

0.05

0.045

0.04

0.035

0.03

0.025

0.02

0.015

0.01

0.005

Vstat=5V

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC )

Status Low Output Voltage

Vstat (V)

0.8

0.7

0.6

0.5

Istat=1.6mA

Status Clamp Voltage

Vscl (V)

8

7.8

7.6

7.4

7.2

6.8

6.6

6.4

6.2

Istat=1mA

7

6

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0.4

0.3

0.2

0.1

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

11/22

VN920D-B5 / VN920DSO

P2PAK Maximum turn off current versus load inductance

LMAX (A)

I

100

10

1

A

B

C

0.01 0.1 1 10 100

A = Single Pulse at T

B= Repetitive pulse at T C= Repetitive Pulse at T

Conditions: VCC=13.5V

Values are generated with RL=0Ω In case of repetitive pulses, T

the temperature specified above for curves B and C.

VIN, I

L

=150ºC

Jstart

=100ºC

Jstart

=125ºC

Jstart

jstart

Demagnetization

(at beginning of each demagnetization) of every pulse must not exceed

L(mH)

Demagnetization

12/22

t

SO-16L Maximum turn off current versus load inductance

LMAX (A)

I

100

10

C

VN920D-B5 / VN920DSO

A

B

1

0.01 0.1 1 10 100

A = Single Pulse at T

B= Repetitive pulse at T C= Repetitive Pulse at T

Conditions: VCC=13.5V

Values are generated with RL=0Ω In case of repetitive pulses, T

the temperature specified above for curves B and C.

VIN, I

L

=150ºC

Jstart

=100ºC

Jstart

=125ºC

Jstart

jstart

Demagnetization

(at beginning of each demagnetization) of every pulse must not exceed

L(mH)

Demagnetization

t

13/22

VN920D-B5 / VN920DSO

P2PAK PC Board

P2PAK THERMAL DATA

R

thj-amb

Layout conditio n of Rth and Zth measurements (PCB F R4 area= 60mm x 60mm, PCB thi ckness=2mm, Cu thickness=35µm, Copper areas: 0.97cm

Vs. PCB copper area in open box free air condition

RTHj_amb (°C/W)

2

, 8cm2).

55

Tj-Tamb=50°C

50

45

40

35

14/22

30

0246810

PCB Cu heatsink area (cm^2)

SO-16L PC Board

VN920D-B5 / VN920DSO

SO-16L THERMAL DATA

R

thj-amb

Layout conditio n of Rth and Zth measur ements (P CB FR4 area= 41mm x 48mm , PCB thickness=2mm, Cu thickness=35µm, Copper areas: 0.5cm

Vs. PCB copper area in open box free air condition

RTH j-amb (°C/W)

70

2

, 6cm2).

65

60

55

50

45

40

01234567

PCB Cu heatsink area ( cm ^2)

15/22

VN920D-B5 / VN920DSO

SO-16L Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/W)

100

10

1

0.1

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s )

Thermal fitting model of a single channel HSD in SO-16L

Pulse calculation formula

Z

THδ

where

RTHδ Z

δ tpT⁄=

THtp

Footprint

2

6 cm

1 δ–()+⋅=

Tj

16/22

C1

R1 R2

Pd

Thermal Parameter

Area/island (cm2) Footprint 6

R1 (°C/W) 0.02

C2

C3

R3

T_amb

C4

R4

C5

R5

C6

R6

R2 (°C/W) 0.1 R3 ( °C/W) 2.2 R4 (°C/W) 12 R5 (°C/W) 15 R6 (°C/W) 35 20 C1 (W.s/°C) 0.0015 C2 (W.s/°C) 7.00E-03 C3 (W.s/°C) 1.50E-02 C4 (W.s/°C) 0.14 C5 (W.s/°C) 1 C6 (W.s/°C) 5 8

P2PAK Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/W)

1000

VN920D-B5 / VN920DSO

100

10

1

0.1

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s)

Thermal fitting model of a single channel HSD in P2PAK

Pulse calculation formula

Z

THδ

where

RTHδ Z

δ tpT⁄=

THtp

Footprint

2

6 cm

1 δ–()+⋅=

Tj

Pd

C1

R1 R2

Thermal Parameter

Area/island (cm2) Footprint 6

R1 (°C/W) 0.02

C2

C3

R3

T_amb

C4

R4

C5

R5

C6

R6

R2 (°C/W) 0.1 R3 (°C/W) 0.22 R4 (°C/W) 4 R5 (°C/W) 9 R6 (°C/W) 37 22 C1 (W.s/°C) 0.0015 C2 (W.s/°C) 0.007 C3 (W.s/°C) 0.015 C4 (W.s/°C) 0.4 C5 (W.s/°C) 2 C6 (W.s/°C) 3 5

17/22

VN920D-B5 / VN920DSO

P2PAK MECHANICAL DATA

DIM.

A4.30 4.80 A1 2.40 2.80 A2 0.03 0.23

b0.80 1.05 c0.45 0.60

c2 1.17 1.37

D8.95 9.35 D2 8.00

E 10.00 10.40 E1 8.50

e3.20 3.60

e1 6.6 0 7.00

L 13.70 14.50 L2 1.2 5 1.40 L3 0.9 0 1.70 L5 1.5 5 2.40

R

V2 0º 8º

Package We ight 1.40 Gr (typ)

MIN. TYP MAX.

mm.

0.40

18/22

P010R

SO-16L MECHANICAL DATA

VN920D-B5 / VN920DSO

DIM.

A 2.65 0.104 a1 0.1 0.2 0.004 0.008 a2 2.45 0.096

b 0.35 0.49 0.014 0.019

b1 0.23 0.32 0.009 0.012

C 0.5 0.020 c1 45° (typ.)

D 10.1 10.5 0.397 0.413

E 10.0 10.65 0.39 3 0.419

e 1.27 0.050

e3 8.89 0.350

F 7.4 7.6 0.291 0.300

L 0.5 1.27 0.020 0.050 M 0.75 0.029 S8° (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

19/22

1111

VN920D-B5 / VN920DSO

10.8

9.4

4.6

16.15

2

P

PAK TUBE SHIPME NT (no suffix)P2PAK SUGGESTED PAD LAYOUT

Base Q.ty 50 Bulk Q.ty 1000

0.6

1.1

7.9

B

Tube length (± 0.5) 532

A 18 B 33.1

C

C (± 0.1) 1

All dimensions are in mm.

TAPE AND REEL SHIPMENT (suffix “13TR”)

TAPE DIMENSIONS

According to Elec tronic Industrie s Association (EIA) Sta ndard 481 rev. A, Feb. 1986

Tape width W 24 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 16 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 11.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2

A

All dimensions are in m m .

REEL DIMENSIONS

Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13

F 20.2 G (+ 2 / -0) 24.4 N (min) 60 T (max) 30.4

All dimensions ar e in mm.

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1

Top

cover

tape

End

500mm min

Empty components pockets saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

VN920D-B5 / VN920DSO

SO-16L TUBE SHIPMENT (no suffix)

Base Q.ty 50 Bulk Q.ty 1000

C

A

B

TAPE AND REEL SHIPMENT (suffix “13TR”)

Tube length (± 0.5) 532 A 3.5 B 13.8 C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13

F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4

TAPE DIMENSIONS

According to Elec tronic Industrie s Association (EIA) Sta ndard 481 rev. A, Feb. 1986

Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 12 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2

All dimensions ar e in mm.

Top

cover

tape

End

500mm min

Empty components pockets saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

21/22

1

VN920D-B5 / VN920DSO

Information furnished is believed to be accurate and reliable. Ho wev er, STMicroelectr onics assumes no r es ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent r ights of STMicr oelectronics . Specifications mentioned in this publication are subject to c hange withou t notice. This publicatio n s upersedes an d r eplaces all information p r ev iously supplied. STMic r oelectroni c s pr oducts are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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Datasheet VN920DSO, VN920D-B513TR, VN920D-B5 Datasheet (SGS Thomson Microelectronics)

Specifications and Main Features

Frequently Asked Questions

User Manual