SGS Thomson Microelectronics VN820SP13TR, VN820SP, VN820SO, VN820PT13TR, VN820PT Datasheet

®

VN820 / VN820SO

/ VN820SP / VN820-B5 / VN820PT

HIGH SIDE DRIVER

TYPE R

DS(on)

I

OUT

V

CC

VN820 VN820SP VN820-B5

40 mΩ 9 A 36 V VN820SO VN820PT

■ CMOS COMPATIBLE INPUT

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VN820, VN820SP, VN820-B5, VN820SO, VN820PT are monoli thic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for dri ving any kind of l oad wit h one side connected to ground. Active VCC pin voltage clamp prote cts the device

against low energy spikes (see ISO7637 transient

BLOCK DIAGRAM

10

1

PowerSO-10™

PENTAWATT

P2PAK

SO-16L

PPAK

ORDER CODES

PACKAGE TUBE T&R

PENTAWATT

VN820

PowerSO-10™ VN820SP VN820SP13TR P2PAK VN820-B5 VN820-B513TR SO-16L VN820SO VN820SO13TR PPAK VN820PT VN820PT13TR

compatibility table). Active current limitation combined with thermal shutdown and automatic restart protect the device against overload.

The device detects open load condition both is on and off state. Output shorted to VCC is detected in

the off state. Device automatically turns off in case of ground pin disconnection.

V

CC

OVERVOLTAGE

DETECTION

UNDERVOLTAGE

DETECTION

Power CLAMP

DRIVER

CURRENT LIMITER

ON STATE OPENLOAD

DETECTION

OFF STATE OPENLOAD

AND OUTPUT SHORTED TO V

DETECTION

OUTPUT

CC

GND

INPUT

STATUS

(*) See application schematic at page 9

V

CC

CLAMP

OVERTEMPERATURE

DETECTION

LOGIC

June 20 03 1/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

DC Supply Vol tage 41 V

V

CC

- V

- I

I

Reverse DC Supply Volt age - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA

GND

DC Output Current Internally Limited A

I

OUT

Reverse DC Ou tput Current - 9 A

OUT

DC Input Current +/- 10 mA

I

IN

DC Status Curr ent +/- 10 mA

STAT

Electrostatic Discharge (Human Bo dy Model: R=1 .5KΩ; C=100pF)

ESD

- INPUT

- STATUS

V

- OUTPUT

- V

CC

E

Maximum Switching Energy (L=4mH; RL=0Ω;

MAX

V

=13.5V ; T

bat

Maximum Switching Energ y (L=3 .7mH;

MAX

RL=0Ω; V Maximum Switching Energy (L=4.48mH;

MAX

RL=0Ω; V Power Diss ip ation TC=25°C 65.8 65.8 65.8 8.3 65.8 W

P

tot

Junction Operating Temperature Internally Limited °C

T

j

Case Oper ating Temperature - 40 to 150 °C

T

c

Storage Temperature - 55 to 150 °C

T

stg

jstart

=13.5V ; T

bat

=13.5V ; T

bat

=150ºC ; IL=13A)

jstart

=150ºC ; IL=13A)

jstart

PowerSO-10

481 481 mJ

Value

™ PENTAWATT P

4000 4000 5000 5000

2

PAK SO-16L PPAK

438 mJ

526 mJ

Unit

V V V V

CONNECTION DIAGRAM (TOP VIEW)

GROUND

INPUT

STATUS

N.C.

6 7 8 9

10

V

CC

PowerSO-10

5 4 3 2 1

11

™

OUTPUT OUTPUT N.C. OUTPUT OUTPUT

PPAK / P2PAK / PENTAWATT

CURRENT AND VOLTAGE CONVENTIONS

I

IN

I

STAT

V

IN

V

STAT

INPUT

STATUS

V

CC

GND

OUTPUT

I

GND

I

OUT

V N.C. GND INPUT STATUS N.C. N.C. V

V

OUT

CC

1

8

V

16

CC

OUTPUT OUTPUT OUTPUT OUTPUT OUTPUT OUTPUT V

9

CC

SO-16L

I

S

V

CC

2/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounted on a standard single-sided FR-4 boar d with 0.5cm2 of Cu (at leas t 35µ m t hick) . (**) When mounted on FR4 printed circuit board with 0.5cm

Thermal Resistance Junction-case Max 1.9 1.9 1.9 - 1.9 °C/W

Thermal Resistance Junction-lead Max - - - 15 - °C /W Thermal Resistance Junction-ambient Max 51.9 (*) 61.9 (*) 51.9 (*) 6 5 (**) 76.9 (*) °C/W

PowerSO-10

2

of Cu (at leas t 35µ thick) connec ted to all VCC pins.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C unless otherwise specified) POWER

Symbol Parameter Test Conditions Min Typ Max Unit

CC

OV

ON

S

Oper ating Su pp ly Voltag e 5.5 13 36 V Undervolt age Shut- down 3 4 5.5 V Undervolt age Shut- down

hysteresis Overvolt age Shut-d own 36 V

=3A; Tj=25°C; VCC>8V

I

On State Resistance

Supply Current

Off State Output Curr ent VIN=V Off State Output Curr ent VIN=0V; V Off State Output Curr ent VIN=V Off State Output Curr ent VIN=V

OUT

I

=3A; VCC>8V

OUT

Off Stat e; V Off Stat e; V

Tj=25°C

On State; V

OUT

OUT OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

=13V; VIN=5V; I

CC

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; Vcc=13V; Tj =125°C 5 µA =0V; Vcc=13V; Tj =25°C 3 µ A

V

USD

V

USDhyst

V R

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Value

™ PENTAWATT P

=0V

OUT

=0V;

OUT

=0A

OUT

2

PAK SO-16L PPAK

0.5 V

40 80

10

2

25

20

3.5

Unit

mΩ mΩ

µA

mA

SWITCHING (VCC=13V)

Symbol Parameter Test Conditions Min Typ Max Unit

RL=4.3Ω from VIN rising ed ge to V

=1.3V

OUT

RL=4.3Ω from VIN falling edge to V

=11.7V

OUT

RL=4.3Ω from V V

=10.4V

OUT

RL=4.3Ω from V V

=1.3V

OUT

=1.3 to

=11.7 to

30 µs

See

relative

diagram

See

relative

diagram

dV

t

d(on)

t

d(off)

OUT

Turn-on Delay Time

Turn-off Delay Tim e

/dt

Turn-on Voltage Slope

(on)

/dt

Turn-off Voltage Slope

(off)

INPUT PIN

Symbol Parameter Test Conditions Min Typ Max Unit

Input Low Level 1.25 V

IL

Low Level Input Current VIN=1.25V 1 µA

IL

Input High Level 3.25 V

IH

High Level Input Current VIN=3.25V 10 µA Input Hysteresis Voltage 0.5 V

Input Clamp Voltage

I

IN

I

IN

=1mA =-1mA

66.8

-0.7

8V

V

I

V

I

IH

I(hyst)

ICL

V/µs

V

3/34

1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ELECTRICAL CHARACTERISTICS (continued)

STATUS PIN

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Status Low Output Voltage I Status Leakage Current Normal Operation V Status Pin Input

Capacitance Status Clamp Voltage

PROTECTIONS

Symbol Parameter T est Conditions Min Typ Max Unit

T

t

V

demag

TSD

T

hyst

SDL

I

lim

Shut-down Temperature 150 175 200 °C

Reset Temp erature 135 °C

R

Ther ma l Hy steres is 7 15 °C Statu s delay in ov erload

condition Current limitation Turn-off Output Clamp

Voltage

=1.6mA 0.5 V

STAT

Normal Operation V

=1mA

I

STAT

I

=-1mA

STAT

T

j>TTSD

=5V 10 µA

STAT

=5V 100 pF

STAT

66.8

-0.7

20 µs

9132020A

5.5V<V I

OUT

<36V

CC

=3A; VIN=0V; L= 6m H VCC-41 VCC-48 VCC-55 V

8V

V

A

OPENLOAD DETECTION

Symbol Parameter Test Conditions Min Typ Max Unit

OL

Openload ON State Detectio n Threshold Openload ON State Detection Delay Openload OFF State Voltage Det ection Threshold Openl o ad Detect ion De l a y

at Turn Off

V

> V

OUT

=5V 70 150 300 mA

V

IN

=0A 200 µs

I

OUT

V

=0V 1.5 2.5 3.5 V

IN

OVERTEMP STATUS TIMING

I

< I

OUT

OL

V

IN

STAT

Tj > T

TSD

1000 µs

I

OL

t

DOL(on)

V

t

DOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

V

IN

V

STAT

4/34

2

t

DOL(off)

t

DOL(on)

t

SDL

t

SDL

Switching time Waveforms

V

OUT

dV

/dt

OUT

(on)

V

IN

t

d(on)

80%

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

90%

dV

/dt

OUT

(off)

10%

t

d(off)

t

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

Current Limitation

Overtemperature

Undervo l tage

Overvoltage

Output Voltage > V

Output Current < I

OL

L H

L H H

L H

L

H

L X X

(T

< T

j

> T

j

L

L H

H

L H

TSD

H H

H ) H ) L

H

L

X

H

L

H

L

5/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

OPEN LOAD DETECTION IN OFF STATE

Off state open load detection requires an external pull-up resistor (R

positive supply voltage (V

) connected between OUTPUT pin and a

PU

) like the +5 V line used to

PU

supply the microprocessor. The external resistor has to be selected according to the following requirements:

1) no f al se op en load i nd icat ion wh en load i s co nne cted : in thi s case we have to avoi d V

V

; this res ults in the following condition

Olmin

=(VPU/(RL+RPU))RL<V

V

OUT

to be hi gher than

OUT

Olmin.

Open Load detection in off state

INPUT

DRIVER

+

LOGIC

2) no misdetection when load is disconnected: in this case the V

results in the following condition R I

.

L(off2)

Beca us e I

s(OFF)

has to be higher than V

OUT

<(V

PU

may si gn ifi c a ntly increase if V high (up t o several mA ), the pul l-up resi stor R be conne cted t o a su pp ly t ha t is swit ch ed OFF when t h e

module is in standby. The values of V

OLmin

, V

OLmax

and I

are available in

L(off2)

the Electrical Characteri stics sec ti on.

V batt. VPU

CC

V

PU

R

L(off2)

I

; this

OLmax

PU–VOLma x

is pulled

out

should

PU

)/

STATUS

+

-

OL

V

GROUND

OUT

R

L

R

6/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN

ISO T/R 7637/1

Test Pulse

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

ISO T/R 7637/1

Test Pulse

1CCCC

2CCCC 3aCCCC 3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All functions of the device are performed as de signed after exposure to disturbance.

E One or more f unctions of the device is not performed as d esigned af ter expos ure to disturbance

and cann ot be returned to proper operat ion without replacing the device.

I II III IV D el ay s and

I II III IV

TEST LEVELS

TEST LEVELS R ESULTS

Impedance

Ω

7/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Figur e 1: Waveforms

NORMAL OPERATION

INPUT LOAD VOLTAGE STATUS

UNDERVOLTAGE

V

CC

INPUT

LOAD VOLTAGE STATUS

V

CC

INPUT LOAD VOLTAGE STATUS

V

CC<VOV

USD

OVERVOLTAGE

V

USDhyst

undefined

VCC>V

OV

INPUT

LOAD VOLTAGE STATUS

INPUT

LOAD VOLTAGE

STATUS

T

j

INPUT LOAD CURRENT

STATUS

OPEN LOAD wi th external pull-up

V

OUT>VOL

V

OL

OPEN LOAD without external pull-up

T T

TSD R

OVERTEMPERATURE

8/34

APPLICATION SCHEMATIC

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

+5V

µ

R

C

R

prot

+5V

STA T US

INPUT

GND PROTECTION NETWORK AGAINST REVERSE BATTERY

Soluti on 1: Resistor in the ground line (R can be us ed with any type of load .

The fo llowin g is an indicati on on how to dimen sion the

resistor.

R

GND

1) R

2) R

where -I be foun d in the absolute m aximum rating se ction of the of

≤ 600mV / (I

GND

≥ (−VCC) / (-I

GND

is the DC re vers e grou nd pi n cu rren t an d can

GND

S(on)ma x

)

GND

).

the devic e’s datasheet. Power Dissipation in R

battery situations) is:

= (-VCC)2/R

P

D

GND

(when VCC<0: during reverse

GND

This resistor can be shared amongst several different HSD. Please note that th e va l u e of this re sistor should be calcul ated with form ula (1) wher e I sum of the maximum on-state currents of the different

S(on)max

devices. Please note that if the microprocessor ground is not

common with the device ground then the R produce a shift (I and the status output values. This shift will vary

S(on)max

* R

) in the input thresholds

GND

depending on many devices are ON in the case of several high side drivers sharing the same R

GND

If the calculated power dissipation leads to a large resistor or several devices hav e to share the sa me resisto r then the ST suggest to uti lize Solution 2 (see be low).

Solution 2: A resistor (R

D

GND

A diode (D

=1kΩ) sh ould b e insert ed in paral lel to

GND

if the device will be driving an inductive load.

) in the gr ound line .

GND

only). This

GND

becomes t he

GND

.

will

V

CC

D

OUTPUT

GND

R

V

GND

D

GND

This small signal diode can be s afely shared amongst several different HSD. Also in this case, the presence of

j

the ground network wi ll produce a shift (

600mV) in t he input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the devic e will be subject to transients on the VCC line that are grea ter tha n the ones sh own in the ISO T/R 7637/1 table.

C I/Os PROTECTION:

µ

If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (R in lin e to prevent the µC I/Os pins to latch-up.

The value of these resistors is a compromise between the leakage c urrent of µC an d the current required by the HSD I/Os ( Input le vels comp atibilit y) wi th the lat ch-up li mit of µC I/Os.

≤ R

-V

CCpeak/Ilatchup

Calculation exam ple:

CCpeak

prot

= - 100V an d I

≤ 65kΩ.

prot

For V 5kΩ ≤ R Recommended R

≤ (V

prot

OHµC-VIH-VGND

≥ 20 mA; V

latchup

value is 10kΩ.

) / I

OHµC

ld

IHmax

≥ 4.5V

prot

)

9/34

1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Off State Output Current

IL(off1) (µ A)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5 0

-50 -25 0 25 50 75 100 125 150 175

Off state Vcc=36V

Vin=Vout=0V

Tc (ºC)

Input Clamp Voltage

Vicl (V)

8

7.8

7.6

7.4

7.2

7

6.8

6.6

6.4

6.2 6

Iin=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

High Level Input Current

Iih (uA)

5

4.5

3.5

2.5

1.5

0.5

Vin=3.25V

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150 175

Input High Level

Vih (V)

3.6

3.4

3.2

3

2.8

2.6

2.4

2.2

2

-50 -25 0 25 50 75 100 125 150 175

Input Hysteresis VoltageInput Low Level

Tc (°C)

Vil (V)

2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

10/34

Vhyst (V)

1.5

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

-50 -25 0 25 50 75 100 125 1 50 175

Tc (°C)

Overvoltage Shutdown

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

I

Vs T

LIM

case

Vov (V)

50

48

46

44

42

40

38

36

34

32 30

-50 -25 0 25 50 75 100 125 150 175

Ilim (A)

25

22.5

20

17.5

15

12.5

10

7.5

5

2.5 0

Vcc=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Turn-on Voltage Slope Turn-off Voltage Slope

dVout/dt(on) (V/ms)

1000

900

800

700

600

500

400

300

200

100

Vcc=13V

Rl=4.3Ohm

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

dVout/dt(off) (V/ms)

1000

900

800

700

600

500

400

300

200

100

Vcc=13V

Rl=4.3Ohm

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

On State Resistance Vs T

case

Ron (mOhm)

100

90

80

70

60

50

40

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

Iout=3A

Vcc=8V; 13V; 36V

Tc (ºC)

1

On State Resistance Vs V

CC

Ron (mOhm)

100

90

80

70

60

50

40

30

20

10

0

5 10152025303540

Tc= 150ºC

Tc= 25ºC

Tc= - 40ºC

Vcc (V)

11/34