SGS Thomson Microelectronics VN800PT-8961, VN800S-8961 Datasheet

®

July 2002 1/22

VN800S(8 961 )

/ VN800P T( 8 961 )

HIGH SIDE DRIVER

■ CMOS COMPATIBLE INPUT

■ THERMAL SHUTDOWN

■ CURRENT LIMITATION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VN800S(8961), VN800PT(8961) are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protec ts the device

against low energy spikes (see ISO7637 transient

compatibility table). Active current limitation combined with thermal shutdown a nd automatic restart protect the device against overload. Device autom atically turns off in case of g round pin disconnection.

TYPE R

DS(on)

I

OUT

V

CC

VN800S(8961) VN800PT(8961)

135 mΩ 1.2 A 36 V

SO-8

PPAK

ORDER CODES

PACKAGE TUBE T&R

SO-8 VN800S(8961) VN800S(8961)TR PPAK VN800PT(8961) VN800PT(8961)TR

BLOCK DIAGRAM

UNDERVOLTAGE

OVERTEMPERATURE

GND

INPUT

OUTPUT

OVERVOLTAGE

CURRENT LIMITER

LOGIC

DRIVER

Power CLAMP

STATUS

V

CC

CLAMP

DETECTION

(*) See note at page 8

V

CC

2/22

VN800S(8961) / VN800PT(8961)

ABSOLUTE MAXIMUM RATI NG

CONNECTION DIAGRAM (TOP VIEW)

CURRENT AND VOLTAGE CONVENTIONS

Symbol Parameter

Value

Unit

SO-8 PPAK

V

CC

DC Supply Voltage 41 V

- V

CC

Reverse DC Supply Voltage - 0.3 V

- I

GND

DC Reverse Ground Pin Curren t - 200 mA

I

OUT

DC Output Current Internally Limited A

- I

OUT

Reverse DC Output Current - 6 A

I

IN

DC Input Curre nt +/- 10 mA

V

IN

Input Vol t age Range -3/+V

CC

V

STAT

DC Status Vol tage + V

CC

V

ESD

Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)

- INPU T

- STATUS

- OUTPU T

- V

CC

4000 4000 5000 5000

V V V V

E

MAX

Maximum Switching Energy (L=77.5mH; R

L

=0Ω; V

bat

=13.5V ; T

jstart

=150ºC ; IL=1.5A)

121 mJ

E

MAX

Maximum Switching Energy (L=125mH; R

L

=0Ω; V

bat

=13.5V; T

jstart

=150ºC; IL=1.5A)

195 mJ

P

tot

Powe r Dissip at ion TC=25°C 4.2 41.7 W

T

j

Junction Operating Temperature Internally Limited °C

T

c

Case Operating Tempe rature - 40 to 150 °C

T

stg

Storage Temperature - 55 to 150 °C

L

max

Max Induc ti ve Load (VCC=30V; R

LOAD

=48Ω; T

amb

=100°C;

Rth

case>ambient

≤25°C/W)

2H

V

CC

V

CC

OUTPUT OUTPUT

N.C.

GND

STATUS INPU T

1

4

5

8

5 4 3 2 1

STATUS

OUTPUT

GND

INPUT

V

CC

SO-8 PPAK

INPUT

I

S

I

IN

V

IN

V

CC

STATUS

I

STAT

V

STAT

GND

V

CC

I

OUT

V

OUT

I

GND

OUTPUT

3/22

VN800S(8961) / VN800PT(8961)

THERMAL DATA

(*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area ( at least 35µ thick) connected to all VCC pins. (**) When mounted on FR4 printed circuit board with 0.5 cm

2

of copper area ( at least 35µ thick).

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C, unless otherwise specified)

POWER

SWITCHING (VCC=24V)

INPUT PIN

Symbol Parameter

Value

Unit

SO-8 PPAK

R

thj-case

Thermal R esistance Junctio n-case

Max

-3°C/W

R

thj-lead

Thermal R esistance Junctio n-lead

Max

30 - °C/W

R

thj-amb

Thermal R esistance Junctio n-ambient

Max

93 (*) 78 (**) °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

Operating Supply Voltage 5.5 36 V

V

USD

Undervolt age Shut- down 3 4 5.5 V

V

OV

Overvolt age Shut-d own 36 V

R

ON

On State Resistance

I

OUT

=0.5A; Tj=25°C

I

OUT

=0.5A

135 270

mΩ mΩ

I

S

Supply Current

Off State; V

CC

=24V; T

case

=25°C

On State; V

CC

=24V

On State; V

CC

=24V; T

case

=100°C

10

1.5

20

3.5

2.6

µA mA mA

I

LGND

Output Current at turn-off

V

CC=VSTAT=VIN=VGND

=24V

V

OUT

=0V

1mA

I

L(off1)

Off State Output Curr ent VIN=V

OUT

=0V 0 50 µA

I

L(off2)

Off State Output Curr ent VIN=V

OUT

=0V; Vcc=13V; Tj =125°C 5 µA

I

L(off3)

Off State Output Curr ent VIN=V

OUT

=0V; Vcc=13V; Tj =25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

Turn-on Delay Time

RL=48Ω from VIN rising edge to V

OUT

=2.4V

10 µs

t

d(off)

Turn-off Delay Tim e

RL=48Ω from VIN falli ng edge to V

OUT

=21.6V

40 µs

dV

OUT

/

dt

(on)

Turn-on Voltage Slo pe

RL=48Ω from V

OUT

=2.4V to

V

OUT

=19.2V

See

relativ e

diagram

V/µs

dV

OUT

/

dt

(off)

Turn-off Voltage S lope

RL=48Ω from V

OUT

=21.6V to

V

OUT

=2.4V

See

relative

diagram

V/µs

Symbol Par am eter Test Co nditions Min Typ Max Unit

V

INL

Input Low Level 1.25 V

I

INL

Low Leve l Input Curr ent VIN=1.25V 1 µA

V

INH

Input High Level 3.25 V

I

INH

High Level Input Current VIN=3.25V 10 µA

V

I(hyst)

Input Hysteresis Voltage 0.5 V

I

IN

Input Current VIN=VCC=36V 200 µA

1

4/22

VN800S(8961) / VN800PT(8961)

2

ELECTRICAL CHARACTERISTICS (continued) STATUS PIN

PROTECTIONS

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

Status Low Output Voltage I

STAT

=1.6 mA 0.5 V

I

LSTAT

Status Leakage Current Normal Operation; V

STAT=VCC

=36 V 10 µA

C

STAT

Status Pin Input Capacitance

Normal Operation; V

STAT

= 5V 30 pF

Symbol Parame ter Test Conditions Min Typ Max Unit

T

TSD

Shut-down Temperature 150 175 200 °C

T

R

Reset Temp erature 135 °C

T

hyst

Ther ma l Hy steresis 7 15 °C

T

SDL

Status Delay in Overload Condition

T

j>Tjsh

20 µs

I

lim

DC Short Circuit Current VCC=16V; R

LOAD

=10mΩ 1.2 2 A

V

demag

Turn-off Output Clamp Voltage

I

OUT

=0.5 A; L=6mH VCC-47 VCC-52 VCC-57 V

OVERTEMP STATUS TIMING

Tj>T

jsh

V

IN

V

STAT

t

SDL

t

SDL

5/22

VN800S(8961) / VN800PT(8961)

V

OUT

dV

OUT

/dt

(on)

t

r

80%

10%

t

f

dV

OUT

/dt

(off)

t

d(off)

t

d(on)

V

IN

t

90%

Switching time Waveforms

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

L

H

L

H

H H

Current Limitation

L H H

L X X

H

(T

j

< T

TSD

) H

(T

j

> T

TSD

) L

Overtemperature

L

H

L

H

L

Undervoltage

L

H

L

X X

Overvoltage

L

H

L

H H

6/22

VN800S(8961) / VN800PT(8961)

Figur e 1: Peak Short Circuit Current Test Circuit

Figur e 2: Avalanche Energy Test Circuit

10kΩ

CONTROL

UNIT

R

IN

INPUT

GND

OUTPUT

R

L

=10mΩ

+V

CC

GND

STATUS

10kΩ

CONTROL

UNIT

R

IN

INPUT

GND

OUTPUT

LOAD

+V

CC

GND

STATUS

V

CC

V

CC

7/22

VN800S(8961) / VN800PT(8961)

ISO T/R 7637/1

Test Pulse

TEST LEVELS

I II III IV

Delays and Impedance

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

Ω

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

Ω

ISO T/R 7637/1

Test Pulse

TEST LEVEL S RESULTS

IIIIIIIV

1CCCC

2CCCC 3aCCCC 3bCCCC

4CCCC

5CEEE

ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN

CLASS CONTENTS

C All functions of the device are performed as designed after exposure to disturbance.

E One or more functions of the device is not performed as designed aft er exposure to dist urbance

and canno t be returned to proper operation without replacing the device.