SGS Thomson Microelectronics VN772K Datasheet

®

VN772K

QUAD SM ART P OWE R SOL ID STATE RE LAY

FOR COMP LET E H B RIDG E CO NF IGUR ATIONS

TYPE R

VN772K 120 mΩ (*) 9A (**) 36V

(*) Total resis tance of one side in bridge configuration (**) Typica l c ur r ent limitation value

■ SUITED AS LOW VOLTAGE BRIDGE

■ LINEAR CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ SHORT CIRCUIT PROTECTED

■ DOUBLE STATUS FLAG DIAGNOSTIC (OPEN

DS(on)

I

OUT

V

CC

DRAIN)

■ INTEGRATED CLAMPING CIRCUITS

■ UNDERVOLTAGE PROTE CTIO N

■ ESD PROTECTION

DESCRIPTION

The VN772K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the d ouble high si de an d low side switches are made using |STMicroelectronics VIPower™ M0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual

SO-28

high side switches have bui lt-i n ther mal s hutdo wn to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Statu s output is provi ded to indicate open load in off and on state and overtemperature. The low sid e swi tches are two O MNIFET II typ es

(fully autopr otecte d Powe r MOSF ET in V IPower™ technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin.

PIN FUNCTION

No NAME FUNCTION

1, 3, 25, 28 DRAIN 3 Drain of Switch 3 (low-side switch)

2 INPUT 3 Input of Switch 3 (low-side switch)

4, 11 N.C. Not Connected

5, 10, 19, 24 V

6 GND Ground of Switches 1 and 2 (high-side switche s) 7 INPUT 1 Input of Switch 1 (high-side swi tches) 8 DIAGNOSTIC Diagn ostic of Sw itches 1 and 2 (high-side swit ches) 9 INPUT 2 Input of Switch 2 (high-side swi tch)

12, 14, 15, 18 DRAIN 4 Drain of switch 4 (low-side switch)

13 INPUT 4 Input of Switch 4 (low-side switch) 16, 17 SOURCE 4 Source of Switch 4 (l ow-side switch) 20, 21 SOURCE 2 Source of Switch 2 (hi gh-side switch) 22, 23 SOURCE 1 Source of Switch 1 (hi gh-side switch) 26, 27 SOURCE 3 Source of Switch 3 (l ow-side switch)

November 2002 1/21

CC

Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage

1

VN772K

BLO C K DIAG RA M

V

cc

CLAMP

OVERVOLTAGE

UNDERVOLTAGE

V

cc

GND

INPUT1

DIAG

INPUT2

INPUT3

OVERTEMP. 1

OVERTEMP. 2

LOGIC

CLAMP 1

DRIVER 1

CURRENT LIMITER 1

OPENLOAD ON 1

OPENLOAD OFF 1

Gate

Control

Over

T emperature

DRIVER 2

CURRENT LIMITER 2

OPENLOAD ON 2

OPENLOAD O FF 2

Overvoltage

Clamp

Linear

Current

Limiter

SOURCE1

CLAMP 2

SOURCE2

DRAIN3

SOURCE3

2/21

1

INPUT4

Gate

Control

Over

T emperature

Overvoltage

Clamp

Linear

Current

Limiter

DRAIN4

SOURCE4

CONNECTION DIAGRAM

VN772K

THERMAL DATA

Symbol Parameter Value Unit

R

thj-case

R

thj-case

R

thj-amb

Thermal Resist ance Junction-case (High-side switch) MAX 20 °C/W

Thermal Resist ance Junction-case (Low-side switch) MAX 20 °C/W Thermal Resist ance Junction-ambient MAX 60 °C/W

ABSOLUTE MAXIMUM RATI NG

DUAL HIGH SIDE SWITCH

Symbol Parameter Value Unit

tot

DC Supply Voltage 41 V Reverse DC Supply Voltage - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA DC Output Current Internally Limited A Reverse DC Output Current - 6 A DC Input Current +/- 10 mA DC Status Cur rent +/- 10 mA Electrostatic Discharge (Human Body Model: R=1.5KΩ;

C=100pF)

- INPUT

- STATUS

- OUTPU T

- V

CC

4000 4000 5000 5000

Powe r Dissipation Tc=25°C 6 W Junction Operating Temperature Internally Limited °C

j

Case Operating Temperature - 40 to 150 °C

c

Storage Temperature - 55 to 150 °C

V

- V

- I I

OUT

- I

I

STAT

V

P

T

CC

GND

OUT

I

IN

ESD

T

stg

V V V V

3/21

1

VN772K

ABSOLUTE MAXIMUM RATING (continued)

LOW SIDE SWITCHES

Symbol Parameter Value Unit

V

DS

V

IN

I

IN

R

IN MIN

I

D

I

R

V

ESD1

V

ESD2

P

tot

T

j

ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH

(8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)

POWER OUTPUTS (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

(**) Operating Supply Voltag e 5.5 13 36 V

V

CC

(**) Undervol tage Shut -down 3 4 5.5 V

V

USD

(**) Overv olt age Shut-d ow n 36 V

V

OV

R

DS(on)

(**) Supply Current

I

S

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Drain-source Voltage (VIN=0V) Internally Clampe d V Input Voltage Internally Clamped V Input Current +/-20 mA Minim um Input Series Impe dance 150 Ω Drain Current Inte rnally Lim ited A Reverse DC Output Current -10.5 A Electrostat ic Dischar ge (R=1.5KΩ , C=100pF) 4000 V Electrostat ic Dischar ge on output pin only (R=330Ω, C=150pF)

16500 V

Power Dissipation (TC=25°C) 6 W

Opera ting Junct ion Temperature Internally limited °C

I

=2A; Tj=25°C

On State Resistance

OUT

I

=2A; VCC>8V

OUT

Off Stat e; V Off Stat e; V

V

IN=VOUT

On State; V

Off State Output Current VIN=V

OUT

Off State Output Current VIN=0V; V Off State Output Current VIN=V Off State Output Current VIN=V

OUT OUT

=13V; V

CC

=13V; Tj =25°C;

CC

=0V

=13V

CC

IN=VOUT

=0V

12

5

=0V; VCC=36V; Tj=125°C 0 50 µA

=3.5V -75 0 µA

OUT

=0V; VCC=13V; Tj =125°C 5 µA =0V; VCC=13V; Tj =25°C 3 µA

60

120

40

25

7

mΩ mΩ

µA

mA

SWITCHING (Per each channel) (VCC=13V)

Symbol Parameter Test Condit ions Min Typ Max U nit

t

d(on)

t

d(off)

dV

OUT

dt

(on)

dV

OUT

dt

(off)

(**) Per device

4/21

Turn-on Delay Time

Turn-off Delay Time

/

Turn-on Voltage Slope

/

Turn-off Voltage Slope

RL=6.5Ω from VIN rising edge to V

=1.3V

OUT

RL=6.5Ω from VIN falling edge to V

=11.7V

OUT

RL=6.5Ω from V

=10.4V

V

OUT

RL=6.5Ω from V V

=1.3V

OUT

=1.3V to

OUT

=11.7V to

OUT

30 µs

See

relative

diagram

See

relative

diagram

V/µs

VN772K

ELECTRICAL CHARACTERISTICS FOR DUAL HI GH SIDE SWITCH (continued) INPUT PINS (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

V

I

IH

V

I(hyst)

V

ICL

LOGIC INPUT (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

V

I

IH

V

I(hyst)

V

ICL

STATUS PIN (Per each channel)

Symbol Parameter Test Conditions Min Typ M ax Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Input Low Level 1.25 V

IL

Low Level Input Current VIN=1.25V 1 µA

IL

Input High Level 3.25 V

IH

High Level Input Current VIN=3.25V 10 µA Input Hyst eresis Vo lt age 0.5 V

=1mA

I

Input Clamp Voltage

Input Low Level 1.25 V

IL

Low Level Input Current VIN = 1.25V 1 µA

IL

Input High Level 3.25 V

IH

IN

I

= -1mA

IN

6.5 7.4

-0.7

High Level Input Current VIN = 3.25V 10 µA Input Hyst eresis Vo lt age 0.5 V

= 1mA

I

Input Clamp Voltage

Status Low Output Voltage I

IN

I

= -1mA

IN

= 1.6 mA 0.5 V

STAT

Status Leakage Current Normal Operation; V Status Pin Input

Capacitance Status Clamp Voltage

Normal Operation; V

= 1mA

I

STAT

I

= - 1mA

STAT

= 5V 10 µA

STAT

= 5V 100 pF

STAT

66.8

-0.7

66.8

-0.7

8.5 V

8V

V

PROTECTIONS (Per each channel)

Symbol Parameter Test Condit ions M in Typ Max Unit

T

t

SDL

I

V

demag

TSD

T

hyst

lim

Shut-down Temperature 150 175 200 °C

Reset Temp erature 135 °C

R

Ther ma l Hy steresi s 7 15 °C Status Delay in Overload

Conditions

Current limitation T

Tj>T

=125°C

j

TSD

8.5

6

915

5.5V<VCC<36V Turn-off Output Clamp Voltage

=2A; L= 6m H VCC-41 VCC-48 VCC-55 V

I

OUT

20 µs

15 15

A A A

5/21

1

VN772K

ELECTRICAL CHARACTERISTICS FOR DUAL HI GH SIDE SWITCH (continued) OPENLOAD DETECTION (Per each channel)

Symbol Parameter Test Conditions Min Typ Max Unit

I

OL

t

DOL(on)

V

T

DOL(off)

Openload ON State Detectio n Threshol d Openload ON State Detection Delay

=5V 50 100 200 mA

V

IN

=0A 200 µs

I

OUT

Openload OFF State Voltage Detection

OL

Threshold Openload Detection Delay

at Turn Off

VIN=0V 1.5 2.5 3.5 V

1000 µs

6/21

VN772K

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES

(-40°C < Tj < 150°C, unless otherwise specified) OFF

Symbol Parameter Test Conditions Min Typ Max Unit

V

CLAMP

V

CLTH

V

I

V

I

DSS

INTH

ISS

INCL

Drain-source Clamp Voltage

Drain-source Clamp Threshold Voltage

Input Threshold Voltage VDS=VIN; ID=1mA 0.5 2.5 V Supply Cur rent fro m Inpu t

Pin Input-Source Clamp

Voltage Zero Input Voltage Drain

Current (VIN=0V)

ON

Symbol Parameter Test Conditions Min Typ Max Unit

R

DS(on)

Stati c Dr ain-sourc e On Resist an ce

(Tj=25°C, unless otherwise specified) DYNAMIC

Symbol Parameter Test Conditions Min Typ Max Unit

Forward

(*)

g

fs

C

OSS

Transconductance Output Capacitance VDS=13V; f=1MHz; VIN=0V 220 pF

VIN=0V; ID=3.5A 40 45 55 V

VIN=0V; ID=2mA 36 V

VDS=0V; VIN=5V 100 150 µA

=1mA

I

IN

I

=-1mA

IN

=13V; VIN=0V; Tj=25°C

V

DS

V

=25V; VIN=0V

DS

=5V; ID=3.5A; Tj=25°C

V

IN

V

=5V; ID=3.5A

IN

6

-1.0

6.8 8

-0.3

30 75

60

120

VDD=13V; ID=3.5A 9 S

V

µA

mΩ

SWITCHING

Symbol Parameter Test Conditions Min Typ M ax Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

t

(dI/dt)

Q

Turn-on Delay Time Rise Time 470 1500 ns

r

Turn-off Delay Time 500 1500 ns Fall Time 350 1000 ns

f

VDD=15V; ID=3.5A V

=5V; R

gen

gen=RIN MIN

=150Ω

Turn-on Delay Time Rise Time 4.6 14.0 µs

r

Turn-off Dela y Tim e 5.4 16.0 µs Fall Ti me 3.6 11.0 µs

f

Turn-on Current Slope

on

Total In put Charge

i

VDD=15V; ID=3.5A V

=5V; R

gen

=15V; ID=3.5A

V

DD

V

=5V; R

gen

=12V; ID=3.5A; VIN=5V

V

DD

I

=2.13mA

gen

=2.2KΩ

gen

gen=RIN MIN

=150Ω

100 300 ns

0.75 2.3 µs

6.5 A/µs

18 nC

SOURCE DRAIN DIODE

Symbol Parameter Tes t Conditions Min Typ Max Unit

(*) Forward On Voltage ISD=3.5A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time

rr

Reverse Recovery Charge 0.28 µC

rr

Reverse Re covery C urrent 2.5 A

=3.5A; dI/dt=20A/µs

I

SD

V

=30V; L= 20 0 µ H

DD

220 ns

7/21