SGS Thomson Microelectronics VN05HSP Datasheet

HIGH SIDE SMARTPOWER SOLIDSTATE RELAY
DSS
VN05HSP 45 V 0.18 12 A 36 V
OUTPUT CURRENT (CONTINUOUS):
6A @ Tc=25oC
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE SHUT-DOWN
OPEN DRAIN DIAGNOSTIC OUTPUT
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN05HSP is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductiveloads with one side grounded.
Built-in thermal shut-down protects the chip from over temperature and short circuit.
The input control is 5V logic level compatible. The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
R
DS(on
)I
OUT
V
CC
VN05HSP
TARGET DATA
10
1
PowerSO-10
BLOCK DIAGRAM
May 1997
1/8
VN05HSP
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
I
OUT
I
I V V
-V I
STAT
V
ESD
P
T
T
ERB Power Mos Avalanche Energy 350 mJ
CONNECTIONDIAGRAMS
Drain-Source Breakdown Voltage Internally Clamped V Output Current (cont.) 12 A Reverse OutputCurrent -12 A
R
Input C urrent ±10 mA
IN
Supply Voltage(continuous) 40 V
CC
Supply Voltage(pulsed) 60 V
CC
Reverse Supply Voltage -4 V
CC
Status Current ±10 mA Electrostatic Discharge (1.5 k, 100 pF) Powe r D issipa t ion at Tc≤ 25oC
tot
Junction OperatingTemperature -40 to 150
j
Storage Temperature -55 to 150
stg
2000 V
52 W
o
C
o
C
CURRENT AND VOLTAGE CONVENTIONS
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VN05HSP
THERMALDATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.4
62.5
ELECTRICAL CHARACTERISTICS (VCC= 9 to 36 V; -40 Tj≤ 125oC unless otherwise specified) POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
R
I
Clamp
Supply Voltage see note1 5.5 13 36 V
CC
On State Resistance I
on
Supply Current
S
=6A
OUT
I
=6A Tj=25oC
OUT
Off State T
25oC
j
On State
VCC-V
OUT
I
=6A 404555 V
OUT
0.18
0.36 50
15
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
(di/d t)
(di/dt)
V
demag
Turn-on De lay Time Of Output Current
Rise Time Of Outp ut
t
r
Current Turn-o ff D e lay Time Of
Output Current Fall Time Of Output
t
f
Current Turn-o n Curre n t Slope I
on
Turn-o ff C u rren t Slop e I
off
Inductive Load Clamp Volta ge
I
= 6 A Resistive Load
OUT
Input R ise Time < 0.1 µsT I
= 6 A Resistive Load
OUT
Input R ise Time < 0.1 µsT I
= 6 A Resistive Load
OUT
Input R ise Time < 0.1 µsT I
= 6 A Resistive Load
OUT
Input R ise Time < 0.1 µsT
=6A
OUT
I
OUT=IOV
=6A
OUT
I
OUT=IOV
I
= 6 A L = 1 mH -7 -4 -2 V
OUT
25 Tj≤ 140oC
25 Tj≤ 140oC
=25oC
j
=25oC
j
=25oC
j
=25oC
j
15 µs
30 µs
20 µs
10 µs
0.52A/µs
o o
mA
A/µs
2
A/µs
4
A/µs
C/W C/W
Ω Ω
µA
LOGICINPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
V
I(hyst.)
I
V
Input Low Level
IL
Volta ge Input H igh Level
IH
2(*)V
Volta ge Input H ysteresis
0.5 V
Volta ge Input C urrent VIN=5V 50 µA
IN
Input C lamp Voltage IIN=10mA
ICL
I
=-10mA
IN
6
-0.7
0.8 V
V V
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