SGS Thomson Microelectronics VN05H Datasheet
VN05H
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE V
VN05H 60 V 0.18 Ω 12 A 36 V
■ OUTPUT CURRENT (CONTINUOUS):
12A @ T
■ LOGIC LEVEL 5V COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAGE SHUT- DO WN
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ VERY LOW STAND-BY POWER
=25oC
c
DSS
R
DS(on
)I
OUT
V
CC
DISSIPATION
DESCRIP TION
The VN05H is a monolithic devices made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circ uit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature stat us.
BLOCK DIAG RAM
PENTAW AT T
(vertical)
PENTAW AT T
(horizontal )
PENTAW AT T
(in-line)
ORDER CODES:
PENTAWATT
vertical VN050H
PENTAWA TT horizontal VN050H(011Y)
PENTAWA TT in-line VN050H(012Y)
July 1998
1/10
VN05H
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
I
OUT
I
I
V
V
-V
I
STAT
V
ESD
P
T
T
ESB Power Mos Avalanche Energy 350 mJ
CONNECTION DIAGRAMS
Drain-Source Breakdown Voltage 60 V
Output Current (cont.) 12 A
Reverse Output Current -12 A
R
Input Current ±10 mA
IN
Supply Voltage (continuous) 40 V
CC
Supply Voltage (pulsed) 60 V
CC
Reverse Supply Voltage -4 V
CC
Status Current ±10 mA
Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
Power Dissipation at Tc ≤ 25 oC 52 W
tot
Junction Operating Temperature -40 to 150
j
Storage Temperature -55 to 150
stg
o
C
o
C
CURRENT AND VOLTAGE CONVENTI ONS
2/10
VN05H
THERMAL DATA
50
15
o
C/W
o
C/W
µA
mA
A/µs
2
A/µs
4
A/µs
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.4
62.5
ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
R
I
Supply Voltage see note 1 5.5 13 36 V
CC
On State Resistance I
on
Supply Current Off State Tj ≥ 25 oC
S
= 6 A
OUT
I
= 6 A Tj = 25 oC
OUT
0.18
0.36
On State
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
(di/dt)
(di/dt)
V
demag
Turn-on Delay Time Of
Output Current
t
Rise Time Of Output
r
Current
Turn-off Delay Time Of
Output Current
t
Fall Time Of Output
f
Current
Turn-on Current Slope I
on
Turn-off Current Slope I
off
Inductive Load Clamp
Voltage
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
I
= 6 A Resistive Load
OUT
Input Rise Time < 0.1 µs T
= 6 A
OUT
I
= IOV 25 ≤ Tj ≤ 140 oC
OUT
= 6 A
OUT
I
= IOV 25 ≤ Tj ≤ 140 oC
OUT
I
= 6 A L = 1 mH -7 -4 -2 V
OUT
= 25 oC
j
= 25 oC
j
= 25 oC
j
= 25 oC
j
15 µs
30 µs
20 µs
10 µs
0.52A/µs
Ω
Ω
LOGIC INP UT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
V
I(hyst.)
I
V
Input Low Level
IL
Voltage
Input High Level
IH
2(*)V
Voltage
Input Hysteresis
0.5 V
Voltage
Input Current VIN = 5 V 50 µA
IN
Input Clamp Voltage IIN = 10 mA
ICL
I
= -10 mA
IN
6
-0.7
0.8 V
V
V
3/10
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