SGS Thomson Microelectronics VN02N Datasheet

VN02N

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE V

VN02N 60 V 0.4 Ω 6 A 26 V

■ OUTPUT CURRENT (CONTINUOUS): 6A @

DSS

R

DS(on)

I

OUT

V

CC

Tc=25oC

■ 5V LOGIC LEVEL COMPATIBLE INPUT

■ THERMAL SHUT-DOWN

■ UNDER VOLTAGE SHUT-DOWN

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ VERY LOW STAND-BY POWER

DISSIPATION

DESCRIPTION

The VN02N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.

Built-in thermal shut-down protects the chip from
over temperature and short circuit.

The input control is 5V logic level compatible.
The open drain diagnostic output indicates open

circuit (no load) and over temperature status.

BLOCK DIAGRAM

PENTAWATT

(vertical)

PENTAWATT

(horizontal)

PENTAWATT

(in-line)

ORDER CODES:

PENTAWATT vertical VN02N
PENTAWATT horizontal VN02N (011Y)
PENTAWATT in-line VN02N (012Y)

September 1994

1/11

VN02N

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Uni t

V

(BR)DSS

I

OUT

I

I

-V
I

STAT

V

ESD

P

T

T

CONNECTION DIAGRAM

Drain - So urc e Br e ak down Vo ltage 60 V
Out put Current (cont. ) 6 A
Reverse O ut put Cu rr ent -6 A

R

Input Current ±10 mA

IN

Reverse Supply Voltage -4 V

CC

St at us Current ±10 mA
Electrost atic Dischar ge (1.5 kΩ, 100 pF) 2000 V
Powe r Dissipat ion at Tc≤ 25oC29W

tot

Junction Operati ng Tem per at ur e -40 t o 150

j

St or a ge Tem per ature -55 t o 150

stg

o

C

o

C

CURRENT AND VOLTAGE CONVENTIONS

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VN02N

THERMAL DATA

R

thj-case

R

thj-amb

ELECTRICAL CHARACTERISTICS (VCC= 13 V; -40 ≤ Tj≤ 125oC unless otherwise specified)
POWER

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V
R

I

SWITCHING

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

t

d(off)

(di/dt)

(di/dt)

Thermal Resistance Junction-c as e Max

Thermal Resist anc e Junc t ion-ambient Max

Supply Volta ge 7 26 V

CC

On State Res istance I

on

Supply Curr ent Of f Sta te Tj≥ 25oC

S

=3A

OUT

I

=3A Tj=25oC

OUT

4.35
60

On St ate

Turn-on Delay Time Of
Out put Current

Rise Time Of Ou t put

t

r

Current
Tur n - of f Delay T ime O f

Out put Current

t

Fall Time Of Output

f

Current
Turn-on Current S lope I

on

Turn-off Current Slope I

off

I

= 3 A Res istive Lo ad

OUT

Input Rise Time < 0.1 µsT
I

= 3 A Res istive Lo ad

OUT

=25oC

j

Input Rise Time < 0.1 µsTj=25oC
I

= 3 A Res istive Lo ad

OUT

Input Rise Time < 0.1 µsTj=25oC
I

= 3 A Res istive Lo ad

OUT

Input Rise Time < 0.1 µsTj=25oC

=3A

OUT

I

OUT=IOV

=3A

OUT

I

OUT=IOV

10 µs

15 µs

15 µs

6 µs

0.8

0.4
50

15

0.52A/µs

2
4

o

C/W

o

C/W

Ω
Ω

µA

mA

A/µs
A/µs

A/µs

LOGIC INPUT

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

Input LowLevel

IL

0.8 V

Volt age

V

Input High Level

IH

2(*)V

Volt age

V

I(hyst.)

Input Hys teresis

0.5 V

Volt age

I

V

Input Current VIN= 5 V 250 500 µ A

IN

Input Clamp Voltage IIN=10mA

ICL

IIN=-10mA

6

-0.7

PROTECTIONS AND DIAGNOSTICS

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(•) Status Voltage Output

V

STAT

Low

V

USD

Under Voltage S hut
Down

I

=1.6mA 0.4 V

STAT

6.5 V

V
V

3/11

VN02N

ELECTRICAL CHARACTERISTICS (continued)

PROTECTION AND DIAGNOSTICS (continued)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(•) Status Clamp Voltage I

V

SCL

t

SC

I

OV

I

AV

I

OL

T

TSD

T

(*) The VIHis internally cl am ped at 6V about . It is possible to connect this pin to an higher vol t age v ia an external resistor
cal culated to not exceed 10 mA at the input pin.
(•) Status deter m ination > 100 µ s after the switching edge.

Switc h-off Time in
Short Circuit Condition
at Start-Up

Ove r Current R
Aver age Current in

Short Circuit
Open Load Cu r rent

Level
Thermal Shut-down

Tem perature
Reset Temper ature 125

R

=10mA

STAT

I

=-10mA

STAT

R

<10mΩ Tc=25oC 1.55ms

LOAD

<10mΩ -40 ≤ Tc≤ 125oC28A

LOAD

R

<10mΩ Tc=85oC0.9A

LOAD

570mA

140

6

-0.7

V
V

o

C

o

C

FUNCTIONAL DESCRIPTION

The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.

To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140oC. When the
temperature returns to about 125oC the switch is
automatically turned on again.

In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.

PROTECTING THE DEVICE AGAINST REVER­SE BATTERY

The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).

The consequences of the voltage drop across
this diode are as follows:

– If the input is pulled to power GND, a negative

voltage of -VFis seen by the device. (VIL,V
thresholds and V

are increased by VFwith

STAT

respect to power GND).

IH

– The undervoltage shutdown level is increased

by VF.

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.

In this way no shift of VIH,VILand V
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.

STAT

takes

4/11