VN02ANSP
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE V
VN02ANSP 60 V 0.35 Ω 7A 36V
■ OUTPUTCURRENT(CONTINUOUS):
7A @ T
■ LOGICLEVEL5V COMPATIBLEINPUT
■ THERMALSHUT-DOWN
■ UNDERVOLTAGE PROTECTION
■ OPENDRAINDIAGNOSTIC OUTPUT
■ FAST DEMAGNETIZATIONOF INDUCTIVE
=25oC
c
DSS
R
DS(on
)I
OUT
V
CC
LOAD
DESCRIPTION
The VN02ANSP is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperatureand short circuit.The diagnostic
output indicatesan over temperature status.
Fast turn-off of inductive load is achieved by
negative (-18 V) load voltage at turn-off.
BLOCK DIAGRAM
10
PowerSO-10
1
TM
July 1998
1/9
VN02ANSP
ABSOLUTEMAXIMUMRATING
Symbol Parameter Value Unit
V
(BR)DSS
I
OUT
I
I
-V
I
STAT
V
ESD
P
T
T
CONNECTIONDIAGRAMS
Drain-S o ur ce Breakdown Volt ag e 60 V
Out put Cur rent (cont.) 7 A
Reverse Output Cu rrent -7 A
R
Input Cur rent ±10 mA
IN
Reverse Supply V oltage -4 V
CC
St at us Current (sink) ±10 mA
Elect r o st at ic Dis charge (1. 5 kΩ, 100 pF) 2000 V
Power Dissipation at Tc≤ 25oC31W
tot
Junction Operat in g Tem pe r at ure -40 t o 150
j
St orage Tem per atur e -55 t o 150
stg
o
C
o
C
CURRENT ANDVOLTAGECONVENTIONS
2/9
THERMALDATA
R
thj-case
R
thj-amb
($) When mounted using minimum recommended pad size on FR-4 board
Ther mal Resis t an ce Ju nc t io n- case Max
Ther mal Resis t an ce Ju nc t io n- ambient ($) Max
50
VN02ANSP
4
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (VCC=9 to 36 V; T
=25oC unless otherwise specified)
case
POWER
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
V
* Supply Voltag e -40oC<Tj< 125oC736V
CC
R
I
On Stat e Re si st ance I
on
Supply C ur rent Of f State VCC=30V
S
=3A
OUT
=1A VCC=30V Tj=125oC
I
OUT
On State V
On State V
=30V
CC
=30V Tj= 125oC
CC
0.35
0.6
1
9
7
SWITCHING
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
t
d(on)
t
d(off)
(di/dt)
(di/dt)
V
DEMAG
Turn-on Delay Time Of
Out put Cur rent
Rise TimeOf Output
t
r
Current
Turn-off Delay T ime O f
Out put Cur rent
Fall T ime Of Output
t
f
Current
Tur n-on C ur rent S lope I
on
Tur n-of f Curr ent S lope I
off
Induc t i ve Load Clam p
Volt age
I
= 3 A Resistive Load
OUT
15 µs
Input Ris e Time < 0.1 µs
I
= 3 A Resistive Load
OUT
15 µs
Input Ris e Time < 0.1 µs
I
= 3 A Resistive Load
OUT
14 µs
Input Ris e Time < 0.1 µs
I
= 3 A Resistive Load
OUT
4.5 µs
Input Ris e Time < 0.1 µs
=3A 25oC<Tj<125oC
OUT
I
OUT=IOV
=3A 25oC<Tj<125oC
OUT
I
OUT=IOV
I
=3A -40oC<Tj<125oC -24 -18 -14 V
OUT
25oC<Tj<125oC
25oC<Tj<125oC
0.51A/µs
1.54A/µs
Ω
Ω
mA
mA
mA
A/µs
A/µs
LOGIC INPUT (-40oC ≤ Tj≤ 125oC unless otherwisespecified)
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
V
V
V
I(hyst.)
I
V
Input Low Level
IL
Volt age
Input Hig h Level
IH
Volt age
Input Hysteresis
Volt age
Input Cur rent VIN=5V
IN
Input Cla mp Volt ag e IIN=10mA
ICL
=2V
V
IN
=0.8V 25
V
IN
I
=-10mA
IN
0.8 V
2(*)V
0.5 V
250 600
300
5.5 6
-0.7 -0.3
µA
µA
µA
V
V
3/9
VN02ANSP
ELECTRICAL CHARACTERISTICS (continued)
o
PROTECTION AND DIAGNOSTICS(-40
C ≤ Tj≤ 125oC unless otherwisespecified)
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
V
STAT
St at us Volt age Out put
I
=1.6mA 0.4 V
STAT
Low
I
STAT
V
USD
St at us Leakage Cu rre nt V
Under Vol ta ge Shut
=5V 10 µA
STAT
3.5 6 7 V
Down
V
SCL
I
OV
I
St at us Clamp Volt age I
Over Current R
Aver age Current In
av
=10mA
STAT
I
=-10mA
STAT
<10mΩ 15 A
LOAD
R
<10mΩ Tc=85oC0.6A
LOAD
5.5 6
-0.7 -0.3
V
V
Short Circuit
I
DOFF
T
TSD
Leakage Current VCC=30V 1 mA
Ther mal Shut-d own
140
o
Tem perature
T
(*) The Vih is internallyclamped at about 6V. It is possible toconnect this pin to a higher voltagevia an external resistor calculated to not
exceed 10 mA at the input pin.
Reset Temperatu re 125
R
o
TRUTH TABLE
INPUT DIAGNOSTIC OUTPUT
Normal Opera ti on L
H
Ov er- tempera tu re H L L
Under-voltage X H L
H
H
L
H
C
C
Figure1: Waveforms
4/9
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicatesover temperatureconditions.
The truth table shows input, diagnostic output
status and output voltage level in normal
operation and fault conditions. The output signals
are processedby internal logic.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off ata minimum
junction temperature of 140
temperature returns to 125
o
C. When the
o
C the switch is
automatically turned on again. To ensure the
protection in all V
conditions and in all the
CC
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 28Vaccordingto:
V
ds=VCC-IOV
*(Ri+Rw+Rl)
where:
R
= internal resistence ofPower Supply
i
R
=Wires resistance
w
R
= Short Circuitresistance
l
Driving inductiveloads, an internal function of the
device ensures the fast demagnetization with
typical voltage (V
demag
) of -18V.
This function allows the reduction of the power
dissipationaccordingto the formula:
P
dem
= 0.5 * L
load
*(I
)2* [(VCC+V
load
dem
)/V
dem
]*f
VN02ANSP
where f = Switching Frequency
Based on this formula it is possible to know the
value of inductance and/or current to avoid a
thermal shut-down.
PROTECTING THE DEVICE AGAINST REVERSE BATTERY
The simpliest way to protect the device against a
continuous reverse battery voltage (-36V) is to
insert a Schottky diode between pin 1 (GND)and
ground, as shown in the typical application circuit
(Fig. 3). The consequences of the voltage drop
across this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
thresholds and Vstat are increased by Vfwith
respect to power GND).
The undervoltageshut-downlevel is increased by
V
.
f
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
solution allows the use of a standarddiode.
is seen by the device. (Vil,V
f
,Viland V
ih
stat
. This
ih
Figure2: Over Current Test Circuit
5/9
VN02ANSP
Figure3: TypicalApplicationCircuitWith A SchottkyDiode ForReverse Supply Protection
Figure4: TypicalApplicationCircuitWith Separate Signal Ground
6/9
VN02ANSP
R
DS(on)
R
DS(on)
vs Junction Temperature
vs Output Current
R
vs Supply Voltage
DS(on)
InputVoltagesvs Junction Temperature
OutputCurrentDerating
7/9
VN02ANSP
PowerSO-10MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
L 1.20 1.80 0.047 0.071
q 1.70 0.067
α 0
o
o
8
==
==
HE
h
A
F
A1
610
51
eB
M
0.25
D
==
D1
==
DETAIL”A”
E2
==
DETAIL”A”
Q
B
0.10 A
E1E3
==
SEATING
PLANE
A
C
α
B
E4
==
SEATING
PLANE
A1
L
==
0068039-C
8/9
VN02ANSP
Information furnished isbelieved tobe accurate and reliable.However, STMicroelectronics assumes noresponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights ofSTMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes andreplaces allinformation previously supplied. STMicroelectronics products
are not authorized foruse as critical componentsin life support devices or systems without express written approval of STMicroelectronics.
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The ST logo isa trademarkof STMicroelectronics
1998 STMicroelectronics– Printed in Italy – All Rights Reserved
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.
9/9
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