SGS Thomson Microelectronics VIPER22AS, VIPER22ADIP Datasheet
Septe m ber 2002 1/15
VIPer22ADI P
VIPer22AS
LOW POWER OFF LINE SMPS PRIMARY SWITCHER
®
TYPICAL POWER CA PABILITY
n
FIXED 60 KHZ SWI TCHING FREQUENCY
n
9V TO 38V WIDE RANGE VDD VOLTAGE
n
CURRENT MODE CONTROL
n
AUXILIARY UNDERVOLTAGE LOCKOUT
WITH HYSTERESIS
n
HIGH VOLTAGE START UP CURRENT
SOURCE
n
OVERTEMPERA TURE, OVERCURRENT AN D
OVERVOLTAGE PROTECTION WITH
AUTORESTAR T
DESCRIPTION
The VIPer22A combines a dedicated current mode
PWM controller with a high voltage Power
MOSFET on the same silicon chip. Typical
applications cover off line power supplies for
battery charg er adapter s, stan dby pow er suppl ies
for TV or monitors, auxiliary supplies for motor
control, etc. The i nternal control circuit offers the
following benefits:
– Large input voltage range on the VDD pin
accommodates changes in auxiliary supply
voltage. This fe ature is well adapted to battery
charger adapter configurations.
– Automatic burst mode in low load condition.
– Overvoltage protection in hiccup mode.
Main s t y pe SO-8 DIP- 8
European
(195 - 265 Vac)
12 W 20 W
US / Wide range
(85 - 265 Vac)
7 W 12 W
ORDER CODE S
PACKAGE TUBE T&R
SO-8 VIPer22AS VIPer22AS13TR
DIP-8 VIPer22ADIP -
SO-8 DIP-8
BLO C K DIAGRA M
ON/OFF
0.23 V
DRAIN
SOURCE
VDD
PWM
LATCH
60kHz
OSCILLATOR
BLANKING
+
_
8/14.5V
_
+
FF
S
R1
R4QR3
FB
REGULATOR
INTERNAL
SUPPLY
OVERVOLTAGE
LATCH
OVERTEMP.
DETECTOR
1 k
Ω
42V
_
+
R2
FF
S
R
Q
230
Ω
VIPer22ADIP / VIPer22AS
2/15
PIN FUNCTION
CURRENT AND VOLTAGE CONVENTIONS
CONNECTION DIAGRAM
Name Function
V
DD
Power supply of the control circuits. Also provides a charging current during start up thanks to a high
voltage current sour ce connected to the drai n. For this p urpose, an hysteresis comparator mo nitors the
V
DD
voltage and provides two thres holds:
- V
DDon
: Voltage value (typically 14.5V) at whi ch the device starts switching and tur ns off the start up
curre nt source.
- V
DDoff
: Voltage value (typically 8V) at which the device stops switching and turns on the start up current
source.
SOURCE Power MOSFET source and circuit ground reference.
DRAIN
Power MOSFET drain. Al so used by the internal high voltage cu rrent source during start up phase for
charging the extern al V
DD
capacitor.
FB
Feedbac k input. The useful voltage range extends from 0V to 1V, and defines the pea k drain MOSFET
current. The current limitation, which corresponds to the maximum drain current, is obtained for a FB pin
shorted to the SOURCE pin.
I
DD
I
D
I
FB
V
DD
V
FB
V
D
FB
VDD DRAIN
SOURCE
CONTROL
VIPer22A
1
2
3
4
DRAIN
DRAIN
DRAIN
DRAIN
8
7
6
5
DRAIN
DRAIN
DRAIN
DRAIN
1
2
3
4
8
7
6
5
FB
VDD
SOURCE
FB
VDD
SOURCE
SOURCE SOURCE
SO-8 DIP8
VIPer22ADIP / VIPer22AS
3/15
ABSOLUTE MAXIMUM RATI NGS
Note: 1. This parameter applies when the start up current source is off. This is the case when the VDD voltage has reached V
DDon
and
remains ab ov e V
DDoff
.
2. This parameter applies when the s tart up current source is on. This is the case when the V
DD
voltage has not yet reached V
DDon
or has fallen below V
DDoff
.
THERMAL DATA
Note: 1. When mounted on a standard single-sided FR4 board with 200 mm² of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=18V, unless otherwise specified)
POWER SECTION
Note: 1. On clamped inductiv e load
Symbol Parameter Value Unit
V
DS(sw)
Switchin g Drain Source Voltage (Tj=25 ... 125 ° C) (See note 1)
-0.3 ... 730 V
V
DS(st)
Start Up Drain Source Voltage (Tj=25 ... 12 5°C) (See note 2)
-0.3 ... 400 V
I
D
Continuous Drain Current Internally limited A
V
DD
Supply V o ltage 0 ... 50 V
I
FB
Feedbac k Current 3 mA
V
ESD
Electrostatic Discharge:
Machine Model (R=0Ω; C=200pF)
Charged Device Model
200
1.5
V
kV
T
j
Junction Operating Temperature Internally limited °C
T
c
Case Oper ating Temperature -40 to 150 °C
T
stg
Storage Temperature -55 to 150 °C
Symbol Parameter Max Value Unit
Rthj-case
Thermal Resistance Junction-P ins for :
SO-8
DIP-8
25
15
°C/W
Rthj-amb
Thermal Resistance Junction-A m bient for :
SO-8 (See note 1)
DIP-8 (See note 1)
55
45
°C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain-Source Voltage
I
D
=1mA; VFB=2V
730 V
I
DSS
Off State Drain Current
V
DS
=500V; VFB=2V; Tj=125°C
0.1 mA
R
DSon
Static Drain-Source
On State Resistance
I
D
=0.4A
I
D
=0.4A; Tj=100°C
15 17
31
Ω
t
f
Fall Time
I
D
=0.2A; VIN=300V (See fig.1)
(See note 1)
100 ns
t
r
Rise Time
I
D
=0.4A; VIN=300V (See fig.1)
(See note 1)
50 ns
C
oss
Drain Capaci tance
V
DS
=25V
40 pF
VIPer22ADIP / VIPer22AS
4/15
ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=18V, unless otherwise specified)
SUPPLY SECTION
Note: 1. These test condit ions obtained with a resist iv e load are lead ing to the maxim um c onduction time of the device.
OSCILLATOR SECTION
PWM COMPARATOR SECTION
OVERTEMPERATURE SECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
DDch
S ta r t Up Ch arging
Current
V
DS=100V; V
DD
=0V ...V
DDon
(See fig. 2)
-1 mA
I
DDoff
S ta r t Up Ch arging
Current
in Thermal Shutdown
V
DD
=5V; VDS=100V
T
j
> TSD - T
HYST
0mA
I
DD0
Oper ating Supply Current
Not Switching
I
FB
=2mA
35mA
I
DD1
Oper ating Supply Current
Switching
I
FB
=0.5mA; ID=50mA (Note 1)
4.5 mA
D
RST
Restart Duty Cycle (See fig. 3) 16 %
V
DDoff
V
DD
Undervoltage
Shut do w n Th reshold
(See fig. 2 & 3) 7 8 9 V
V
DDon
VDD Start Up Threshold
(See fig. 2 & 3) 13 14.5 16 V
V
DDhyst
VDD Threshold
Hysteresis
(See fig. 2) 5.8 6.5 7.2 V
V
DDovp
VDD Overvo ltage
Threshold
38 42 46 V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
F
OSC
Oscillator Frequency
Total Variation
V
DD=VDDoff
... 35V; Tj=0 ... 100°C
54 60 66 kHz
Symbol Parameter Test Conditions Min. Typ. Max. Unit
G
ID
IFB to ID Current Gain
(See fig. 4) 560
I
Dlim
Peak Current Limitation
V
FB
=0V (See fig. 4)
0.56 0.7 0.84 A
I
FBsd
IFB Shutdown Cur rent
(See fig. 4) 0.9 mA
R
FB
FB Pin Input Impedance
I
D
=0mA (See fig. 4)
1.2 kΩ
t
d
Current Sense Delay to
Turn-Off
I
D
=0.4A
200 ns
t
b
Blanking Time 500 ns
t
ONmin
Minimum Turn On Time 700 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
T
SD
Thermal Shutdown
Temperature
(See fig. 5) 140 170 °C
T
HYST
Thermal Shutdown
Hysteresis
(See fig. 5) 40 °C
VIPer22ADIP / VIPer22AS
5/15
Figur e 1 : Rise and Fall Time
Figur e 2 : Start Up VDD Current
Figur e 3 : Restart Duty Cycle
I
D
V
DS
90%
10%
t
fv
t
rv
t
t
L D
300V
C
FB
VDD DRAIN
SOURCE
CONTROL
VIPer22A
C << Coss
V
DD
V
DDhyst
V
DDoff
V
DDon
I
DD0
I
DDch
VDS = 100 V
F
sw
= 0 kHz
I
DD
t
V
DD
V
DDoff
V
DDon
t
CH
t
ST
D
RST
t
ST
tSTtCH+
-------------------------=
100V
10µF
FB
VDD DRAIN
SOURCE
CONTROL
VIPer22A
2V
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