SGS Thomson Microelectronics VIPER12AS, VIPER12ADIP Datasheet

VIPer12ADI P

®

LOW POWER OFF LINE SMPS PRIMARY SWITCHER

TYPICAL POWER CA PABILITY

Main s t y pe SO-8 DIP8

European

(195 - 265 Vac)

US / Wide range

(85 - 265 Vac)

n

FIXED 60 KHZ SWITCHING FREQUENCY

n

9V TO 38V WIDE RANGE V

n

CURRENT MODE CONTROL

n

AUXILIARY UNDERVOLTAGE LOCKOUT

WITH HYSTERESIS

n

HIGH VOLTAGE START UP CURRENT

SOURCE

n

O VERTEMPERATURE, OVE RCURRENT AND

OVERVOLTAGE PROTECTION WITH AUTORESTAR T

DESCRIPTION

The VIPer12A combines a dedicated current mode PWM controller with a high voltage Power

8 W 13 W

5 W 8 W

VOLTAGE

DD

VIPer12AS

SO-8 DIP-8

ORDER CODES

PACKAGE TUBE T&R

SO-8 VIPer12AS VIPer12AS13TR DIP-8 VIPer12ADIP

MOSFET on the same silicon chip. Typical applications cover off line power supplies for battery charg er adapter s, stan dby pow er suppl ies for TV or monitors, auxiliary supplies for motor control, etc. The i nternal control circuit offers the following benefits:

– Large input voltage range on the VDD pin

accommodates changes in auxiliary supply voltage. This fe ature is well adapted to battery

charger adapter configurations. – Automatic burst mode in low load condition. – Overvoltage protection in hiccup mode.

BLO C K DIAGRA M

DRAIN

ON/OFF

REGULATOR

INTERNAL

VDD

FB

8/14.5V

42V

SUPPLY

_

+

+ _

OVERTEMP.

DETECTOR

R

FF

S

OVERVOLTAGE

Q

Septe m ber 2002 1/15

LATCH

60kHz

OSCILLATOR

S

FF

R1

R4QR3

R2

PWM

LATCH

BLANKING

+ _

0.23 V

230

Ω

1 k

Ω

SOURCE

VIPer12ADIP / VIPer12AS

PIN FUNCTION

Name Function

Power supply of the control circuits. Also provides a charging current during start up thanks to a high voltage current sour ce connected to the drai n. For this p urpose, an hysteresis comparator mo nitors the

voltage and provides two thres holds:

V

DD

V

SOURCE Power MOSFET source and circuit ground reference.

DRAIN

FB

CURRENT AND VOLTAGE CONVENTIONS

- V

DD

: Voltage value (typically 14.5V) at whi ch the device starts switching and tur ns off the start up

DDon

curre nt source.

- V

: Voltage value (typically 8V) at which the device stops switching and turns on the start up current

DDoff

source.

Power MOSFET drain. Al so used by the internal high voltage cu rrent source during start up phase for charging the extern al V

capacitor.

DD

Feedbac k input. The useful voltage range extends from 0V to 1V, and defines the pea k drain MOSFET current. The current limitation, which corresponds to the maximum drain current, is obtained for a FB pin shorted to the SOURCE pin.

I

DD

I

D

V

DD

CONNECTION DIAGRAM

FB

VDD

1

2

3

4

SOURCE SOURCE SOURCE

I

FB

V

FB

VDD DRAIN

FB

CONTROL

VIPer12A

8

DRAIN

7

DRAIN

6

DRAIN

5

DRAIN

SOURCE

FB

VDD

V

D

1

2

3

4

SO-8 DIP8

8

7

6

5

DRAIN DRAIN DRAIN DRAIN

2/15

VIPer12ADIP / VIPer12AS

ABSOLUTE MAXIMUM RATI NGS

Symbol Parameter Value Unit

V

DS(sw)

V

DS(st)

I

V

I

FB

V

ESD

T T

T

Note: 1. This parameter applies when the start up current source is off. This is the case when the VDD voltage has reached V

THERMAL DATA

Symbol Parameter Max Value Unit

Rthj-case

Rthj-amb

Note: 1. When mounted on a standard single-sided FR4 board with 200 mm² of Cu (at least 35 µm thick) connected to all DRAIN pins.

Switchin g Drain Source Voltage (Tj=25 ... 125 ° C) (See note 1)

Start Up Drain Source Voltage (Tj=25 ... 12 5°C) (See note 2) Continuous Drain Current Internally limited A

D

Supply V o ltage 0 ... 50 V

DD

-0.3 ... 730 V

-0.3 ... 400 V

Feedbac k Current 3 mA Electrostatic Discharge:

Machine Model (R=0Ω; C=200pF) Charged Device Model

Junction Operating Temperature Internally limited °C

j

Case Oper ating Temperature -40 to 150 °C

c

Storage Temperature -55 to 150 °C

stg

remains ab ov e V

2. This parameter applies when the s tart up current source is on. This is the case when the V or has fallen below V

DDoff

.

DDoff

.

DD

200

1.5

voltage has not yet reached V

Thermal Resistance Junction-P ins for: SO-8 DIP8

25 15

Thermal Resistance Junction-A m bient for: SO-8 (See note 1) DIP8 (See note 1)

55 45

kV

DDon

°C/W

V

and

DDon

ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=18V, unless otherwise specified)

POWER SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

I

DSS

R

DSon

C

Note: 1. On clamped inductiv e load

Drain-Source Voltage

DSS

Off State Drain Current Static Drain-Source

On State Resistance

t

Fall Time

f

t

Rise Time

r

Drain Capaci tance

oss

I

=1mA; VFB=2V

D

V

=500V; VFB=2V; Tj=125°C

DS

=0.2A

I

D

I

=0.2A; Tj=100°C

D

=0.1A; VIN=300V (See fig.1)

I

D

(See note 1)

=0.2A; VIN=300V (See fig.1)

I

D

(See note 1)

V

=25V

DS

730 V

0.1 mA

27 30

54

100 ns

50 ns 40 pF

Ω

3/15

VIPer12ADIP / VIPer12AS

ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=18V, unless otherwise specified)

SUPPLY SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

DDch

I

DDoff

I

DD0

I

DD1

D

RST

V

DDoff

V

DDon

V

DDhyst

V

DDovp

Note: 1. These test condit ions obtained with a resist iv e load are lead ing to the maxim um c onduction time of the device.

S ta r t Up Ch arging Current

S ta r t Up Ch arging Current in Thermal Shutdown

Oper ating Supply Current Not Switching

Oper ating Supply Current Switching

DS=100V; V

V

=5V; VDS=100V

V

DD

> TSD - T

T

j

=2mA

I

FB

I

=0.5mA; ID=50mA (Note 1)

FB

DD

HYST

=5V ...V

(See fig. 2)

DDon

-1 mA

0mA

35mA

4.5 mA

Restart Duty Cycle (See fig. 3) 16 % V

Undervoltage

DD

Shut do w n Th reshold VDD Start Up Threshold

VDD Threshold Hysteresis

VDD Overvo ltage Threshold

(See fig. 2 & 3) 7 8 9 V (See fig. 2 & 3) 13 14.5 16 V

(See fig. 2) 5.8 6.5 7.2 V

38 42 46 V

OSCILLATOR SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

F

OSC

Oscillator Frequency Total Variation

V

DD=VDDoff

... 35V; Tj=0 ... 100°C

54 60 66 kHz

PWM COMPARATOR SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

G

I

Dlim

I

FBsd

R

t t

t

ONmin

IFB to ID Current Gain

ID

V

Peak Current Limitation

=0V (See fig. 4)

FB

IFB Shutdown Cur rent

I

FB Pin Input Impedance

FB

Current Sense Delay to

d

Turn-Off Blanking Time 500 ns

b

=0mA (See fig. 4)

D

I

=0.2A

D

(See fig. 4) 320

0.32 0.4 0.48 A

(See fig. 4) 0.9 mA

1.2 kΩ

200 ns

Minimum Turn On Time 700 ns

OVERTEMPERATURE SECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Thermal Shutdown

SD

Temperature Thermal Shutdown

Hysteresis

(See fig. 5) 140 170 °C

(See fig. 5) 40 °C

T

HYST

4/15

Figur e 1 : Rise and Fall Time

I

D

V

DS

90%

t

fv

VIPer12ADIP / VIPer12AS

L D

C << Coss

t

VDD DRAIN

FB

CONTROL

t

rv

VIPer12A

C

300V

SOURCE

10%

Figur e 2 : Start Up VDD Current

I

DD

I

DD0

V

DDhyst

I

DDch

V

DDoff

V

DDon

VDS = 100 V

F

sw

Figur e 3 : Restart Duty Cycle

= 0 kHz

t

V

DD

V

DDon

DDoff

DD

D

RST

VDD DRAIN

10µF

t

CH

-------------------------=

tSTtCH+

t

ST

t

ST

t

FB

CONTROL

2V

VIPer12A

SOURCE

100V

5/15