SGS Thomson Microelectronics VIPER100BSP, VIPER100B Datasheet

VIPer100B



TYPE V

DSS

I

R

n

DS(on)

VIPe r100B/BS P 400V 6 A 1.1 Ω

FEATURE

■ ADJUSTABLESWITCHINGFREQUENCYUP

TO200KHZ

■ CURRENT MODE CONTROL

■ SOFTSTART AND SHUT DOWN CONTROL

■ AUTOMATIC BURST MODE OPERATION IN

STAND-BY CONDITIONABLE TO MEET
”BLUE ANGEL” NORM (<1W TOTAL POWER
CONSUMPTION)

■ INTERNALLY TRIMMEDZENER

REFERENCE

■ UNDERVOLTAGE LOCK-OUT WITH

HYSTERESIS

■ INTEGRATED START-UPSUPPLY

■ AVALANCHERUGGED

■ OVERTEMPERATUREPROTECTION

■ LOW STAND-BYCURRENT

■ ADJUSTABLECURRENTLIMITATION

VIPer100BSP

SMPS PRIMARY I.C.

PRELIMINARY DATA

10

PENTAWATTHV PENTAWATT HV

PowerSO-10

DESCRIPTION

VIPer100B/100BSP, made using VIPower M0
Technology, combines on the samesiliconchip a
state-of-the-art PWM circuit together with an
optimized high voltageavalanche rugged Vertical
Power MOSFET (400 V / 6 A). Typical
applications cover off line power supplies with
a secondary power capability of 100 W in a US
mains lines configuration. It is compatible from
both primaryor secondaryregulationloop despite
using around 50% less components when
compared with a discrete solution. Burst mode
operation is an additional feature of this device,
offering the possibility to operate in stand-by
mode without extra components.

1

(022Y)

BLOCK DIAGRAM

DD

V

January 2000

13 V

ERROR

AMPLIFIER

_
+

UVLO

LOGIC

0.5 V +

ON/OFF

_

4.5 V

SECURITY

LATCH

FF

Q

R/S

S

OVERTEMP.

DETECTOR

s

µ

1.7

DELAY

OSC

OSCILLATOR

PWM

LATCH

S

R1

FF

R2 R3

COMP

Q

250 ns

BLANKING

0.5V

+
_

_

+

CURRENT

AMPLIFIER

0.5V/A

DRAIN

SOURCE

1

3

2
0

0
C
F

1/20

VIPER100B/BSP

ABSOLUTEMAXIMUM RATING

Symbol Para met e r Val u e Uni t

V

I

V

V

OSC

V

COMP

I

COMP

V

I

D(AR)

P

T

T

THERMALDATA

R

thj-case

R

thj-a mb.

(*) When mounted using the minimum recommended pad size on FR-4 board.

Continuous Dr ain -S ou r ce Voltage (Tj = 25 to 125oC) -0.3 to 400 V

DS

Maximum Current Internally Limited A

D

Supply Volt age 0 to 15 V

DD

Volt a ge Range Input 0 to V

DD

Volt a ge Range Input 0 t o 5 V
Maximum Continuous Current ±2mA
Electrostatic d ischarge (R = 1.5 KΩ C = 100p F )

esd

Avalanche Drain-Source Current , Repetiti ve or No t-R epetitiv e

=100oC, Pulse Width Limite d by TJmax, δ <1%)

(T

C

Power Dissi pation at T c = 25oC82W

tot

Junction Oper ating Tempera tu r e Int er na lly Lim it e d

j

St orage Temperat u r e -65 to 15 0

stg

4000 V

3A

PENTAWATT-HV PowerSO-10(*)

Ther mal Resistanc e Junction-c a se Max 1.4 1.4
Ther mal Resistanc e Am bi ent-case Max 60 50

o
o

o

C/W

o

C/W

V

C
C

CONNECTION DIAGRAMS(Top View)

PENTAWATTHV PENTAWATTHV (022Y) PowerSO-10

CURRENT AND VOLTAGE CONVENTIONS

IDD ID

OSC

I

OSC

DD

V

13V

OSC

V

­+

ICOMP

VCOMP

DRAINVDD

COMP SOURCE

VDS

2/20

FC00020

ORDERING NUMBERS

PENTAW AT T HV PENT AWAT T HV (0 22Y) Pow erSO-10

VIP er 1 00B VIPe r 10 0B (0 22Y) VIPe r 100 B SP

VIPER100B/BSP

PINSFUNCTIONAL DESCRIPTION
DRAINPIN:

Integrated power MOSFET drain pin. It provides
internal bias current during start-up via an
integrated high voltage current source which is
switched off during normal operation.The device
is able to handle an unclamped current during its
normal operation, assuring self protection against
voltage surges, PCB stray inductance, and
allowing a snubberless operation for low output
power.

SOURCEPIN:

Power MOSFET source pin. Primary side circuit
commongroundconnection.

VDD PIN :

This pin providestwo functions:

- It corresponds to the low voltage supply of the

controlpart of the circuit. If V
the start-up current source is activatedand the
output power MOSFET is switched off untilthe

voltage reaches 11V. During this phase,

V

DD

the internal current consumption is reduced,
the V

pin is sourcing a currentof about 2mA

DD

and the COMP pin is shorted to ground. After
that, the current source is shut down, and the
devicetries to startup by switchingagain.

goes below 8V,

DD

- Thispin isalso connectedto the error amplifier,

in order to allow primary as well as secondary
regulation configurations. In case of primary
regulation, an internal 13V trimmed reference
voltage is used to maintain V
secondary regulation, a voltage between 8.5V
and 12.5V will be put on V
transformerdesign, in orderto stuckthe output
of the transconductance amplifier to the high
state. The COMP pin behaves as a constant

at 13V. For

DD

DD

pin by

current source, and can easily be connectedto
the output of an optocoupler. Note that any
overvoltage due toregulation loop failure is still
detected by the error amplifier through the V

DD

voltage, which cannot overpass 13V. The
output voltage will be somewhat higher than
the nominalone, but still under control.

COMP PIN :

This pin provides two functions :

- It is the output of the error transconductance

amplifier, and allows for the connection of a
compensation network to provide the desired
transfer function of the regulation loop. Its
bandwidth can be easily adjusted to the
needed value withusual componentsvalue. As
stated above, secondary regulation
configurations are also implemented through
the COMP pin.

- When the COMP voltage is going below 0.5V,

the shut-downof the circuit occurs, with a zero
duty cycle for the power MOSFET.This feature
can be used to switch off the converter, and is
automatically activated by the regulation loop
(whatever is the configuration) to provide a
burst mode operation in case of negligible
output power or openload condition.

OSC PIN :

An R
to define the switching frequency. Note that
despite the connection of R
significant frequency change occurs for V
varying from 8V to 15V. It provides also a
synchronisationcapability, when connectedto an
external frequencysource.

network must be connected on that pin

T-CT

to VDD,no

T

DD

3/20

VIPER100B/BSP

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Valu e Uni t

I

D(ar)

E

Avalanche Curre nt , Rep et itive or Not - Re petitive
(pulse width limited by T

Single Pulse Avalanche Energy

(ar)

(starting T

=25oC, ID=I

j

max, δ <1%)

j

) (see fig.12)

D(ar)

ELECTRICAL CHARACTERISTICS (TJ=25oC, VDD=13 V, unless otherwise specified)
POWERSECTION

Symbol Pa ram et e r Test Con d i ti ons Mi n . Typ . Ma x. Unit

BV

I

DSS

R

DS(on)

C

OSS

(1) On Inductive Load, Clamped.

Drain-Source Voltage ID=1mA V

DSS

Off -St ate Drain Current V

St at i c Drain Source o n
Resistance

t

Fall Time ID=0.2AVin= 3 00 V ( 1)

f

=0V TJ= 125oC

COMP

=400V 1 mA

V

DS

ID=4A

=4A TJ=100oC

I

D

= 0 V 400 V

COMP

(see fig.3)

Rise Tim e ID=4A Vin= 3 00 V ( 1)

t

r

(see fig. 3)

Out put Capacitance VDS= 2 5 V 180 pF

3A

60 mJ

0.9 1.1
2

100 ns

50 ns

Ω

Ω

SUPPLY SECTION

Symbol Pa ram et e r Test Co nditi ons Mi n . Typ . Ma x. Uni t

I

DDch

I

DD0

I

DD1

I

DD2

V

DDo f f

V

DDo n

V

DDhyst

St art-up C ha r ging
Current

Oper ating Supply C ur rent VDD=12V, FSW=0KHz

VDD=5V VDS=70V
(see fig. 2 and fig. 15)

-2 mA

12 16 mA

(see fig. 2)

Oper ating Supply C ur rent VDD=12V, FSW= 1 00 K Hz 15.5 mA
Oper ating Supply C ur rent VDD=12V, FSW=200KHz 19 mA
Unde rv oltage Shut down (see f i g. 2) 8 V
Unde rv oltage Reset (se e fig. 2) 11 12 V
Hyst eresis Start-up (see f i g. 2) 2.4 3 V

4/20

VIPER100B/BSP

ELECTRICAL CHARACTERISTICS (continued)

OSCILLATORSECTION

Symbol Pa ram et e r Test Co nditi ons Mi n . Typ . Ma x. Uni t

F

V

OSCih

V

OSCil

ERRORAMPLIFIERSECTION

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

DDre

∆V

DDreg

G

A

VOL

G

V

COMPLO

V

COMPHI

I

COMPLO

I

COMPHI

Os cillator Fr equ ency

SW

Total Variation

=8.2K

R

T

=9to15V

V

DD

with R

Ω

CT=2.4 nF

± 1% CT ± 5%

T

90 100 110 KHz

(see fig. 6 and fig. 9)

Os cillator Peak Voltage 7.1 V
Os cillator Valley Voltage 3. 7 V

Vg Regul at i on Point I

=0mA(seefig.1) 12.61313.4 V

COMP

Total Variation TJ= 0 to 100oC2%
Unity Gain B a ndwidth From Input = VDDto Output = V

BW

COMP

150 KHz

COM P pi n is open (see f ig. 10)

Open Loop Volt age

COM P pi n is open (see f ig. 10) 45 52 dB

Gain
DC Transc o nductance V

m

Out put Low Level
Out put High Level
Out put Low Curr ent

= 2.5 V (see fig. 1) 1.1 1.5 1.9 mA/V

COMP

=-400µAVDD=14V

I

COMP

=400µAVDD=12V

I

COMP

V

=2.5V VDD=14V -600 µA

COMP

0.2 V

4.5 V

Capa bility
Output High Current

V

=2.5V VDD= 1 2 V 600 µA

COMP

Capa bility

PWM COMPARATOR SECTION

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

H

ID ∆V

V

COMPoffVCOMP

I

Dpeak

t

Peak Curr ent Limitation VDD= 1 2 V COMP pin open 6 8 11 A
Current Sense Delay

d

/∆I

COMP

Dpeak

offset I

V

= 1 t o 3 V 0.35 0.5 0.65 V/A

COMP

=10mA 0.5 V

Dpeak

ID= 1 A 250 ns

to turn-off

t

t

on(min)

Blanking Time 250 360 ns

b

Minimum on T ime 350 ns

SHUTDOWNAND OVERTEMPERATURE SECTION

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

COMPth

t

DISsu

T

T

hyst

Restart threshold (see fig. 4) 0.5 V
Disabl e Set Up Tim e (see fig. 4) 1.7 5 µs
Thermal Shutdown

tsd

(see fig. 8) 140 170

Tem p er at u re
Thermal Shutdown

(see fig. 8) 40

Hyst e r esis

o

o

C

C

5/20

VIPER100B/BSP

Figure1:VDDRegulationPoint

COMP

I

ICOMPHI

0

ICOMPLO

VDDreg

Figure3: TransitionTime

ID

10%Ipeak

Slope =

Gm in mA/V

FC00150

Figure2: UndervoltageLockout

IDD

IDD0

DD

V

VDDhyst

V

DDoff

IDDch

Figure4: ShutDown Action

VOSC

VCOMP

t

tDISsu

VDS=70V

Fsw = 0

V

DDon

FC00170

VDD

t

VDS

VCOMPth

90%VD

ID

10%V

D

t

tf tr

FC00160

ENABLE

DISABLE

Figure5: BreakdownVoltage vs Temperature Figure 6: Typical FrequencyVariation

1.15

BV

DS S

(Nor malize d)

1.1

1.05

0.95

1

0 20406080100120

Temperature ( C)

FC00180

1

(%)

0

-1

-2

-3

-4

-5
0 20 40 60 80 100 120 140

Temperature ( C)

t

t

ENABLE

FC00060

FC00190

6/20