SGS Thomson Microelectronics TXDV812, TXDV612, TXDV412 Datasheet
FEATURES
.VERY HIGH COMMUTATION : > 42.5 A/ms
(400Hz)
.INSULATING VOLT AG E = 2500 V
(UL RECOGNIZE D : E 81734)
(RMS)
.dV/dt : 500 V/µs min
TXDV 412 ---> 812
ALTERNISTORS
Non
A1
A2
G
TO220AB
(Plastic)
20 A/µs
100
- 40 to + 125
DESCRIPTION
The TXDV 412 ---> 812 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge current capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limiting val ues )
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
2
t value tp = 10 ms 72 A2s
Gate supply : IG = 500mA diG/dt = 1A/µs
Storage and operating junction temperature range - 40 to + 150
Tc = 90 °C12 A
tp = 2.5 ms 170 A
tp = 8.3 ms 125
tp = 10 ms 120
Repetitive
F = 50 Hz
Repetitive
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Symbol
V
DRM
V
RRM
March 1995
Parameter
Repetitive peak off-state voltage
Tj = 125 °C
260 °C
TXDV Unit
412 612 812
400 600 800 V
1/5
TXDV 412 - --> 812
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 2.5 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.9 °C/W
GATE CHARACTERISTICS (maximum values)
P
ELECTRICAL CHARACTERISTICS
= 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
G (AV)
Symbol Test Conditions Quadrant Value Unit
I
GT
V
GT
V
GD
tgt VD=V
I
L
IH * IT= 500mA gate open Tj=25°C MAX 100 mA
VTM *ITM= 17A tp= 380µs Tj=25°C MAX 1.95 V
I
DRM
I
RRM
dV/dt * Linear slope up to VD=67%V
(dI/dt)c * (dV/dt)c = 200V/µs Tj=110°C MIN 10 A/ms
* For either polarity of electrode A2 voltage with reference to e lectrode A1.
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 mA
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V
VD=V
dIG/dt = 3A/µs
IG=1.2 I
V
DRM
V
RRM
gate open
(dV/dt)c = 10V/µs42.5
RL=3.3kΩ Tj=110°C I-II-III MIN 0.2 V
DRM
IG = 500mA
DRM
GT
Rated
Rated
DRM
Tj=25°C I-II-III TYP 2.5 µs
Tj=25°C I-III TYP 100 mA
II 200
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 2
Tj=110°C MIN 500 V/µs
2/5
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