SGS Thomson Microelectronics TXDV808, TXDV608, TXDV408 Datasheet
FEATURES
.VERY HIGH COMMUTATION : > 28 A/ms
(400Hz)
.INSULATING VOLT AG E = 2500 V
(UL RECOGNIZE D : E 81734)
(RMS)
.dV/dt : 500 V/µs min
TXDV 408 ---> 808
ALTERNISTORS
Non
A1
A2
G
TO220AB
(Plastic)
20 A/µs
100
- 40 to + 125
DESCRIPTION
The TXDV 408 ---> 808 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge current capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limiting val ues )
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
2
t value tp = 10 ms 32 A2s
Gate supply : IG = 500mA diG/dt = 1A/µs
Storage and operating junction temperature range - 40 to + 150
Tc = 90 °C8 A
tp = 2.5 ms 115 A
tp = 8.3 ms 85
tp = 10 ms 80
Repetitive
F = 50 Hz
Repetitive
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Symbol Parameter TXDV Unit
408 608 808
V
DRM
V
RRM
March 1995
Repetitive peak off-state voltage
Tj = 125 °C
400 600 800 V
260 °C
1/5
TXDV 408 - --> 808
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 4 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 3 °C/W
GATE CHARACTERISTICS (maximum values)
P
ELECTRICAL CHARACTERISTICS
= 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
G (AV)
Symbol Test Conditions Quadrant Value Unit
I
GT
V
GT
V
GD
tgt VD=V
I
L
IH * IT= 500mA gate open Tj=25°C MAX 100 mA
VTM *ITM= 11A tp= 380µs Tj=25°C MAX 1.8 V
I
DRM
I
RRM
dV/dt * Linear slope up to VD=67%V
(dI/dt)c * (dV/dt)c = 200V/µs Tj=110°C MIN 7 A/ms
* For either polarity of electrode A2 voltage with reference to e lectrode A1.
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 mA
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V
VD=V
dIG/dt = 3A/µs
IG=1.2 I
V
DRM
V
RRM
gate open
(dV/dt)c = 10V/µs28
RL=3.3kΩ Tj=110°C I-II-III MIN 0.2 V
DRM
IG = 500mA
DRM
GT
Rated
Rated
DRM
Tj=25°C I-II-III TYP 2.5 µs
Tj=25°C I-III TYP 100 mA
II 200
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 2
Tj=110°C MIN 500 V/µs
2/5
Loading...