SGS Thomson Microelectronics TSTM872-20 Datasheet

TSTM872-20
RF POWER MODULE
MOBILE APPLICATIONS
PRODUCTDEVELOPMENTDATA SHEET
This datasheetcontainsthe designcriteriaand target specificationsfor a product whichis currentlyunder development by SGS-THOMSON. The design criteria and specificationsof this item could change prior to introductionand SGS-THOMSONassumes no liabilityfor use of information contained herein.
.MOBILE CLASS C POWER AMPLIFIER
.806 - 870 MHz
.12.5 VOLTS
.INPUT/OUTPUT 50 OHMS
.P
OUT
20 W MIN.
.GAIN = 19 dB MIN.
ORDERCODE
TSTM872-20
PIN CONNECTI ON
DESCRIP TIO N
The TSTM872-20 module is designed f or high power, h igh efficiency, analog private mobile radio syste ms in the 80 6 - 870 MHz freque ncy range.
A s ignificant advantage of this module is its high RF power output p erformance a nd very low stan dby current.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C)
Symbol Parameter Value Unit
VS1,VS2,VS3DC Sup ply Voltag e 16 Vdc
RF In put Pow er 400 mW RF Ou tput Powe r 25 W Storage Temperature Operating Case Temperature
P T
P
OUT STG
T
IN
C
1. RF Input 2. 12.5 Vdc VS13. 12.5 Vdc V
4. 12.5 Vdc V
S3
5. RF Output
30 to +100
30 to +100
BRANDING
TSTM872-20
S2
°
C
°
C
TSTM8 72-20
ELECTRICAL S PEC I FICATIONS (T
Symbol Parame ter Test Co ndition s
case
unless otherwise noted.)
25°C, V
=
S1,VS2,VS3
12.5 Volts
=
Min. Typ. Max.
Value
BW Frequency Range 806 870 MHz P
I
Q1(q)
I
Q2(q)
I
Q3 (q)
Z
Input Power
IN
η
Efficiency Quiescent Current
V
S1
Quiescent Current
V
S2
Quiescent Current
V
S3
H Harmonics
Input Impedance
IN
Load Mismatch
P P
OUT OUT
= 20 W
20 W
=
250 mW
35 40 %
No RF applied 50 mA
No RF applied 1.0 mA
No RF applied 0.04 mA
P P
OUT OUT
20 W
= = 20 W
VSWR=30:1 V=16 Vdc
OUT
=
25 W
P
58
2.0:1 VSWR
No Degradation in
Output Power
—dBc
Uni t
INTERNAL CO NFIGURATIO N
APPLICATIONS RECOMME NDATI ONS
TSTM8 72-20
OPERATION LIMITS
The TSTM872-20 power module should never be operated under any condition which exceeds the Absolute Maximum Ratings presented on this data sheet. Nor should the module be operated continuously at any of the specified maximum rat­ings. If the module is to be subjected to one or more of the maximum rating conditions, care must be taken to monitor other parameters which may be affected.
DECOUPLING
Failure to properly decouple any of the voltage supply pins will result in oscillations at certain op­erating frequencies. Therefore, it is recommended that these pins be bypassed as indicated in the Module DC and Test Fixture Configuration draw­ing of this data sheet.
MODULE MOUN TING
To insure adequate thermal transfer from the module to the heatsink, it is recommended that a satisfactory thermal compound such as Dow Corning 340, Wakefield 120-2 or equivalent be applied between the module flange and the heatsink.
The heatsink mounting surface under the module should be flat to within +/- 0.05 mm (+/- 0.002 inch). The module should be mounted to the heatsink using 3.5 mm (or 6-32) or equivalent screwstorques to 5-6 kg-cm (4-6 in-lb).
The module leads should be attached to equip­ment PC board using 180°C solder applied to the
leads with a properly grounded soldering iron tip, not to exceed 195°C, applied a minimum of 2 mm (0.080”) from the body of the module for a dura­tion not to exceed 15 seconds per lead. It is im­perative that no other portion of the module, other than the leads, be subjected to temperatures in excess of 100°C (maximum storage temperature), for any period of time, as the plastic moulded cover, internal components and sealing adhesives may be adversely affected by such conditions.
Due to the construction techniques and materials used within the module, reflow soldering of the flange heatsink or leads, is not recommended.
PACKAGE MECHANICAL DAT A
Ref.: Dwg. No. M12-030 rev. C
TSTM8 72-20
Infor mat ion fur ni shed is bel ieved t o be accurat e and reliable. However, S GS-THO MSON Microelectronics assumes no respon­sibi lity for the consequences of use of such inf or mat ion nor for any infr ingement of pa t ents or ot her right s of thi r d parties wh ich may r esul t from it s use. N o li cense is granted by i m pl ication or oth erw i se under any patent or patent rights of SGS-T H OMS O N Micr oel ectronics. Specifications mentioned i n t his publi cation are subjec t to change without n ot ice. T hi s publication super sedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in li f e s upport devices or systems w i t hout express writ t en approval of SGS -T H OMS O N Microele ctr oni cs.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
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