SGS Thomson Microelectronics TSTM872-20 Datasheet

TSTM872-20
RF POWER MODULE
MOBILE APPLICATIONS
PRODUCTDEVELOPMENTDATA SHEET
This datasheetcontainsthe designcriteriaand target specificationsfor a product whichis currentlyunder development by SGS-THOMSON. The design criteria and specificationsof this item could change prior to introductionand SGS-THOMSONassumes no liabilityfor use of information contained herein.
.MOBILE CLASS C POWER AMPLIFIER
.806 - 870 MHz
.12.5 VOLTS
.INPUT/OUTPUT 50 OHMS
.P
OUT
20 W MIN.
.GAIN = 19 dB MIN.
ORDERCODE
TSTM872-20
PIN CONNECTI ON
DESCRIP TIO N
The TSTM872-20 module is designed f or high power, h igh efficiency, analog private mobile radio syste ms in the 80 6 - 870 MHz freque ncy range.
A s ignificant advantage of this module is its high RF power output p erformance a nd very low stan dby current.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C)
Symbol Parameter Value Unit
VS1,VS2,VS3DC Sup ply Voltag e 16 Vdc
RF In put Pow er 400 mW RF Ou tput Powe r 25 W Storage Temperature Operating Case Temperature
P T
P
OUT STG
T
IN
C
1. RF Input 2. 12.5 Vdc VS13. 12.5 Vdc V
4. 12.5 Vdc V
S3
5. RF Output
30 to +100
30 to +100
BRANDING
TSTM872-20
S2
°
C
°
C
TSTM8 72-20
ELECTRICAL S PEC I FICATIONS (T
Symbol Parame ter Test Co ndition s
case
unless otherwise noted.)
25°C, V
=
S1,VS2,VS3
12.5 Volts
=
Min. Typ. Max.
Value
BW Frequency Range 806 870 MHz P
I
Q1(q)
I
Q2(q)
I
Q3 (q)
Z
Input Power
IN
η
Efficiency Quiescent Current
V
S1
Quiescent Current
V
S2
Quiescent Current
V
S3
H Harmonics
Input Impedance
IN
Load Mismatch
P P
OUT OUT
= 20 W
20 W
=
250 mW
35 40 %
No RF applied 50 mA
No RF applied 1.0 mA
No RF applied 0.04 mA
P P
OUT OUT
20 W
= = 20 W
VSWR=30:1 V=16 Vdc
OUT
=
25 W
P
58
2.0:1 VSWR
No Degradation in
Output Power
—dBc
Uni t
INTERNAL CO NFIGURATIO N
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