ELECTRICAL CHARACTERISTICS
V
CC
+
=5V,V
CC
-
=-5V, pin 8 connectedto 0V,pin 9 connectedto V
CC
+
,T
amb
=25oC
(unless otherwisespecified)
Symbol Parameter Min. Typ. Max. Unit
V
io
Input Offset Voltage (Vic=Vo= 0V)
T
min.
≤ T
amb.
≤ T
max.
3
5
mV
I
io
Input Offset Current
T
min.
≤ T
amb.
≤ T
max.
12
5
µA
I
ib
Input Bias Current
T
min.
≤ T
amb.
≤ T
max.
51520µA
I
CC
Supply Current (per amplifier, no load)
T
min.
≤ T
amb.
≤ T
max.
4.5 6
8
mA
CMR Common Mode Rejection Ratio (V
ic
= -3V to +4V, Vo= 0V)
T
min.
≤ T
amb.
≤ T
max.
80
70
100 dB
SVR Supply Voltage Rejection Ratio (V
CC
= ±5V to ±3V)
T
min.
≤ T
amb.
≤ T
max.
60
50
75 dB
A
vd
Large Signal Voltage Gain (RL=10kΩ,VO=±2.5V)
T
min.
≤ T
amb.
≤ T
max.
57
54
70 dB
V
OH
High Level Output Voltage (Vid= 1V)
R
L
= 600Ω
R
L
= 150Ω
T
min.
≤ T
amb.
≤ T
max.
RL= 150Ω
3
2.5
2.4
3.5
3
V
V
OL
Low Level Output Voltage (Vid= -1V)
R
L
= 600Ω
R
L
= 150Ω
T
min.
≤ T
amb.
≤ T
max.
RL= 150Ω
-3.5
-2.8
-3
-2.5
-2.4
V
I
o
Output Short Circuit Current (Vid= ±1V) Source
Sink
T
min.
≤ T
amb.
≤ T
max.
Source
Sink
20
20
15
15
36
40
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 600Ω,CL= 15pF, f =7.5MHz) 90 150
MHz
f
T
Transition Frequency 90 MHz
SR Slew Rate (A
VCL
= +1, RL= 600Ω,CL= 15pF, Vin= -2 to +2V) 70 110 V/µs
∅m Phase Margin (A
VM
= +1) 35 Degrees
e
n
Equivalent Input Noise Voltage (Rs=50Ω, f = 1kHz) 4.2
nV
√Hz
V
O1/VO2
Channel Separation (f = 1MHz to 10MHz) 65 dB
Gf Gain Flatness (f = DC to 6MHz, A
VCL
= 10dB) 0.1 dB
THD Total Harmonic Distortion (f = 1kHz, V
o
= ±2.5V, RL= 600Ω) 0.01 %
∆G Differential Gain (f = 3.58MHz, A
VCL
= +2, RL= 150Ω) 0.03 %
∆
ϕ
DifferentialPhase (f = 3.58MHz, A
VCL
= +2, RL= 150Ω)
0.07 Degree
TSH94
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