SGS Thomson Microelectronics TSH691ID Datasheet



LOW COST 40MHz - 1GHz AMPLIFIER

.

28dB GAIN @3V @ 450MHz

.

+13.5dBmOUTPUTPOWER(P1dB)

.

BIASPIN FOR OUTPUTPOWER& AMPLI­FIER DISABLE

.

50Ω INPUT/OUTPUTMATCHING

DESCRIPTION

TSH691 is a low cost RF amplifier consisted of 2
stages,designedin advancedbipolarprocess, fea­turing high performances.Anexternal bias current
adjust allowsto tunethe outputpower and also to
settheamplifierinpower-downmode.TheTSH691
is intended to RF consumer equipments in ISM
band (remote controls, ASK transmitters) where
cost issensitive

D

SO8

(Plastic Micropackage)

ORDER CODES

Part Number Temperature Range

o

TSH691ID -35, +85

C •

TSH691

Package

D

PIN CONNECTIONS (top view)

RF out

June 1998

GND

GND
GND

1

2

3

4

8

7

6

5

Vbias

V

CC

GND

RF in

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TSH691

SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

V

CC1,VCC2,Vbias

RF in RF Input Power +10 dBm

RF out RF Output Power +21 dBm

T

oper

T

stg

Supply Voltages & Bias Voltage 5.5 V

Operating Free Air Temperature Range -35 to +85
Storage Temperature Range -65 to +150

OPERATINGCONDITIONS

Symbol Parameter Value Unit

V

CC1,VCC2,Vbias

V

bias

RF

sr

Supply Voltages 1.5 to 5 V
Bias Voltage 0to 6 V
RF Signal Range 40 to 1000 MHz

ESD SENSITIVEDEVICE

Handling Precautions Required

o

C

o

C

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ELECTRICAL CHARACTERISTICS

=25oC, VCC&V

T

amb

=+2.7V,ZL=50Ω

bias

TSH691

Parameter

SupplyCurrent 46 mA
S21 (V
S21 (Vin= -20dBm, f = 900MHz) 17 dB
Output Power 1dB Compression (f = 450MHz) 12 dBm
3rd Order Intercept Point (f = 430MHz) 22 dBm
S12 (Reverse Isolation @ f = 400MHz) -46 dB
S11 (Input Return Loss @ f =450MHz) -15 dB
S11 (Input Return Loss @ f =900MHz) -10 dB
Noise Figure @ f = 450MHz 4.5 dB
Noise Figure @ f = 900MHz 5.4 dB
R

All parameters with min. ormax. figures are 100% tested.

= -20dBm, f = 450MHz) 20 23 30 dB

in

Junction Ambient Thermal Resistance For SO8 Package 140 180

th(j-a)

Min. Typ. Max.

TSH691

o

SO8 PACKAGE THERMAL RESISTIVITY

Tamb (°C)

150
135
120
105

90
75
60
45
30

DEVICE

OVERSTRESSED

RIGHT BEHAVIOUR

Rthmin

Rthmax

Unit

C/W

123456

DEFINITION

R

th(j-a)

(oC) Maximum Die JuntionTemperature

T

j

T

amb

P

(W) Maximum DissipatedPower

d

JunctionAmbientThermalResistance

o

(~ 150

C)

(oC) Ambient Temperature

(P

= 0.75 VCC• ICC)

d

Vcc (V)

REMARKS

The right behaviour is obtained when the follow­ing equation is fulfilled.

T

j-Tamb=Pd•Rth(j-a)

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