SGS Thomson Microelectronics TSH690 Datasheet
.
1.5V to 5VOPERATINGVOLTAGE
.
28dB GAIN @ 3V @ 450MHz
.
20dB GAIN @ 3V @ 900MHz
.
+13.5dBmOUTPUTPOWER(P1dB)
.
BIASPIN FOR CURRENT ADJUST&
AMPLIFIERDISABLE
.
ADJUSTABLEOUTPUTPOWER
.
50Ω INPUT/OUTPUTMATCHING
.
FULLYGUARANTEEDAT2.7V
DESCRIPTION
TSH690 is a wide band RF amplifier, consistedof
2 stages, designed in advanced bipolar process
featuring 28dB gain and +13.5dBm output power
at 450MHzunder 3V. The pin 8 allowsan external
bias current adjust to tune the output power and
also to set the amplifier in power-down mode. This
powerfulamplifierisdedicatedtoequipsecuredRF
data transmitters as antennadrivers in ISM band
(reliable RF meter-readingsystems, secured Remote Controls, Cordless Telephones,...)
TSH690
40MHz to 1GHz AMPLIFIER
D
SO8
(Plastic Micropackage)
ORDER CODES
Part Number Temperature Range
o
TSH690ID -40, +85
C •
Package
D
PIN CONNECTIONS (top view)
RF out
September 1998
GND
GND
GND
1
2
3
4
8
7
6
5
Vbias
V
CC
GND
RF in
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TSH690
SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC1,VCC2,Vbias
RF in RF Input Power +10 dBm
RF out RF Output Power +21 dBm
T
oper
T
stg
Supply Voltages & Bias Voltage 5.5 V
Operating Free Air Temperature Range -40 to +85
Storage Temperature Range -65 to +150
OPERATINGCONDITIONS
Symbol Parameter Value Unit
V
CC1,VCC2
V
bias
RF
sr
Supply Voltages 1.5 to 5 V
Bias Voltage 0 to 6 V
RF SignalRange 40 to 1000 MHz
ESD SENSITIVEDEVICE
Handling Precautions Required
o
C
o
C
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ELECTRICAL CHARACTERISTICS
=25oC, VCC&V
T
amb
=+2.7V, ZL=50Ω
bias
TSH690
Parameter
SupplyCurrent 40 46 mA
S21 (V
S21 (Vin= -20dBm, f = 900MHz) 17 dB
Output Power 1dB Compression (f = 450MHz) 8 12 dBm
3rd Order Intercept Point (f = 430MHz) 16 22 dBm
S12 (Reverse Isolation @ f = 400MHz) -46 dB
S11 (Input Return Loss @f = 450MHz) -10 -15 dB
S11 (Input Return Loss @f = 900MHz) -10 dB
Noise Figure @ f = 450MHz 4.5 dB
Noise Figure @ f = 900MHz 5.4 dB
R
All parameters withmin. or max. figures are 100% tested.
= -20dBm, f = 450MHz) 20 23 30 dB
in
Junction Ambient ThermalResistance For SO8 Package 140 180
th(j-a)
Min. Typ. Max.
TSH690
o
SO8 PACKAGE THERMALRESISTIVITY
Tamb (°C)
150
135
120
105
90
75
60
45
30
DEVICE
OVERSTRESSED
RIGHT BEHAVIOUR
Rthmin
Rthmax
Unit
C/W
123456
DEFINITION
R
th(j-a)
(oC) Maximum Die JunctionTemperature
T
j
T
amb
P
(W) Maximum Dissipated Power
d
JunctionAmbient ThermalResistance
o
(~ 150
C)
(oC) Ambient Temperature
(P
= 0.75 VCC• ICC)
d
Vcc (V)
REMARKS
The rightbehaviour is obtained when the following equation is fulfilled.
T
j-Tamb=Pd•Rth(j-a)
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