SGS Thomson Microelectronics TSH22IDT Datasheet
1/11
■ HIGH GAIN BANDWIDTH PRODUCT :
25MHz
■ HIGH SLEW RATE : 15V/µs
■ SINGLE OR DUAL SUPPLY OPERATION :
3V TO 30V (±1.5V to ±15V)
■ LOW VOLTAGE NOISE : 14nV/√Hz
■ NO PHASE INVER SION
■ ESD TOLERANCE : 2kV
■ LATCH-UP IMMUNITY
■ SPICE MACROMODEL INCLUDED IN THIS
SPECIFICATION
DESCRIPTION
TheTSH22 is a dual bipolar operational amplifier
offering a single supply operation from 3V to 30V
with very good performances : medium speed
(25MHz), unity gain stability and low noise.
The TSH22 is therefore an enhanced replacement
of standard dual operational amplifiers.
ORDER CODE
N = Dual in Line Package (DIP)
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
PIN CONNECTIONS (top view)
Part Number Temperature Range
Package
ND
TSH22I -40°C, +125°C
••
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
1
2
3
4
5
6
7
8
-
+
-
+
Output 1
Inverting input 1
Non-inverting input 1
V
CC
V
CC
Output 2
Inverting input 2
Non-inverting input 2
-
+
TSH22
HIGH PERFORMANCE
DUAL BIPOLAR OPERATINAL AMPLIFIER
November 2001
TSH22
2/11
SCHEMATIC DIAGRAM (1/2 TSH22)
ABSOLUTE MAXIMUM RATINGS
OPERATING CONDITIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage ±18 to 36 V
V
id
Differential Input Voltage
1)
±36 V
V
i
Input Voltage (see note 1) ±18 V
Output Short-circuit Duration
2)
Infinite
T
oper
Operating Free-Air Temperature Range -40 to +125 °C
T
j
Maximum Junction Temperature +150 °C
T
stg
Storage Temperature Range -65 to +150 °C
p
tot
Maximum Power Dissipation (see note 2) 500 mW
1. Either or both input voltages must not exceed the magnitude of V
CC
+
or V
CC
-
2. Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded
Symbol Parameter Value Unit
V
CC
Supply Voltage 3 to 30 V
TSH22
3/11
ELECTRICAL CHARACTERISTICS
V
CC
+
= 15V, V
cc
-
= -15V, T
amb
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
io
Input Offset Voltage (Vic = 0V, Vo = 0V)
Vcc
+
= +15V, Vcc- = -15V
T
min
≤ T
amb
≤ T
max
Vcc
+
= +5V, Vcc- = 0V
2.5
3.5
2.5
mV
∆
V
io
Input Offset Voltage Drift (Vic = 0V, Vo = 0V)
2
µ
V/°C
Iio
Input Offset Current (V
ic
= 0V, Vo = 0V)
365nA
I
ib
Input Bias Current (Vic = 0V, Vo = 0V)
100 650 nA
Vicm Common Mode Input Voltage Range
Vcc
-
to
Vcc
+
-1.8V
V
A
vd
Large Signal Voltage Gain (RL = 2kΩ, Vo = 0V to +10V
T
min
≤ T
amb
≤ T
max
32
20
100 V/mV
±V
opp
Output Voltage Swing (Vid = ±1V)
Vcc
+
= +15V, Vcc- = -15V RL = 2kΩ VOH
V
OL
RL =10kΩ VOH
V
OL
Vcc+=+5V, Vcc-=0V RL = 2kΩ VOH
V
OL
13.4
13.4
3.7
13.9
-13.9
14
-14.7
0.15
-13.5
-14.1
0.2
V
I
o
Output Short Circuit Current
(V
id
= ±1V, Vo = 0V) Source
Sink
25
25
37
37
mA
CMR Common Mode Rejection Ratio (V
ic
= -15V to +13.2V)
80 100 dB
SVR
Supply Voltage Rejection Ratio
Vcc
+
/Vcc- = +15V/-15V to +5V/-5V
90 105
dB
I
cc
Supply Current (Vo = 0V, no load, each amplifier)
Vcc
+
= +15V, Vcc- = -15V
T
min
≤ T
amb
≤ T
max
Vcc+=+5V, Vcc-=0V
2.15 2.75
3
2.75
mA
SR
Slew Rate
(V
i
= -10V to +10V, CL = 100pF, RL = 2kΩ, AV = +1)
815
V/µs
GBP
Gain Bandwith Product (f = 100kHz, R
L
= 2kΩ, CL = 100pF)
17 25 MHz
B Unity Gain Bandwith (Open loop) 5 MHz
∅
m
Phase Margin R
L
= 2k
Ω
R
L
= 2kΩ, CL = 100pF
50
40
Degrees
e
n
Equivalent Input Noise Voltage (Rs = 100Ω, f = 1kHz)
14
V
o1/Vo2
Channel Separation (f = 20Hz to 20kHz) 120 dB
THD
Total Harmonic Distortion
(V
cc
= ±15V, f = 1kHz, A
VCL
= 20dB, RL = 600Ω, Vo = 3Vrms)
0.003
%
nV
Hz
----------- -
TSH22
4/11
MACROMODEL
** Standard Linear Ics Macromodels, 1993.
CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVE POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TSH22 1 3 2 4 5 (analog)
*********** *********************************************
*
.MODEL MDTH D IS=1E-8 KF=7.976636E-15
CJO=10F
* INPUT STAGE
CIP 2 5 1.200000E-11
CIN 1 5 1.200000E-11
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 1.083333E+00
RIN 15 16 1.083333E+00
RIS 11 15 8.942641E+00
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0
VOFN 13 14 DC 0
IPOL 13 5 2.400000E-04
CPS 11 15 10.5E-09
DINN 17 13 MDTH 400E-12
VIN 17 5 -0.200000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 1.800000E+00
FCP 4 5 VOFP 7.750000E+0 0
FCN 5 4 VOFN 7.750000E+00
FIBP 2 5 VOFN 5.000000E-04
FIBN 5 1 VOFP 5.000000E-04
* AMPLIFYING STAG E
FIP 5 19 VOFP 6.708333E+02
FIN 5 19 VOFN 6.708333E+02
GVNEG 5 19 5 13 1.395908E-05
GVPOS 5 19 4 13 1.395908E-05
RG1 19 5 8.056996E+04
RG2 19 4 8.056996E+04
CC 19 29 1.100000E-08
HZTP 30 29 VOFP 6.545046E+01
HZTN 5 30 VOFN 6.545046E+01
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 4.054054E+03
VIPM 28 4 1.500000E+02
HONM 21 27 VOUT 4.054054E+03
VINM 5 27 1.500000E+02
RPM1 5 80 1E+06
RPM2 4 80 1E+06
GAVPH 5 82 19 80 6.00E-07
RAVPHGH 82 4 3333222
RAVPHGB 82 5 3333222
RAVPHDH 82 83 1000000
RAVPHDB 82 84 1000000
CAVPHH 4 83 0.12243E-12
CAVPHB 5 84 0.12243E-12
EOUT 26 23 82 5 1
VOUT 23 5 0
ROUT 26 3 2.472597E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.824860E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.824860E+00
.ENDS
ELECTRICAL CHARACTERISTICS
V
cc
= ±15V, T
amb
= 25°C (unless otherwise specified)
Symbol Conditions Value Unit
V
id
0mV
A
vd
RL = 2k
Ω
100 dB
I
cc
No load, per operator 2 mA
Vicm -15.2 to 13.8 V
V
OH
RL = 2k
Ω
+13.9 V
V
OL
RL = 2k
Ω
-13.9 V
I
sink
Vo = 0V
40 mA
I
sourceVo
= 0V
40 mA
GBP
R
L
= 2k
Ω,
CL = 100pF
34 MHz
SR
R
L
= 2k
Ω,
CL = 100pF
10 V/µs
∅
m
R
L
= 2k
Ω,
CL = 100pF
36 Degrees
∅
m
R
L
= 2k
Ω,
CL = 300pF
26 Degrees
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