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SGS Thomson Microelectronics
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TS912IN
Datasheet
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SGS Thomson Microelectronics TS912IN, TS912ID, TS912BIN, TS912BID, TS912AIN Datasheet

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TS912
RAIL TO RAIL
CMOS DUALOPERATIONALAMPLIFIER
April 1999
.
RAILTO RAIL INPUTAND OUTPUT VOLTAGERANGES
.
TO 16V
.
EXTREMELYLOW INPUTBIAS CURRENT : 1pA typ
.
LOW INPUT OFFSETVOLTAGE: 2mVmax.
.
SPECIFIEDFOR 600Ω AND 100Ω LOADS
.
LOW SUPPLYCURRENT : 200µA/Ampli (VCC = 3V)
.
ESD TOLERANCE: 3KV
.
LATCH-UP IMMUNITY
.
MACROMODEL INCLUDEDIN THIS SPECIFICATION
1 2 3 45
6
7
8
-
+
-
+
Inverting Input 1
Output 1
Non-inverting Input 1
V
CC
V
CC
+
Output 2
Inverting Input 2 Non-inverting Input 2
PIN CONNECTIONS(top view)
DESCRIPTION
The TS912 is a RAIL TO RAILCMOS dual opera­tional amplifier designedto operatewithasingleor dual supplyvoltage. The input voltage range V
icm
includes the two
supplyrails V
CC
+
and V
CC
-
.
The outputreaches :
•
V
CC
-
+40mV V
CC
+
-50mV with RL= 10kΩ
•
V
CC
-
+350mV V
CC
+
-350mV with RL= 600Ω This productoffers abroad supply voltage operat­ing rangefrom 2.7V to16V anda supplycurrentof only 200µA/amp.(V
CC
= 3V). Source and sink output current capability is typi­cally 40mA (at V
CC
= 3V), fixed by an internal limitationcircuit. STMicroelectronicsis offeringa quadop-ampwith the same features: TS914.
ORDER CODES
Part Number Temperature Range
Package ND
TS912I/AI/BI -40, +125
o
C ••
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
1/12
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC
Supply Voltage - (note 1) 18 V
V
id
Differential InputVoltage - (note 2) ±18 V
V
i
Input Voltage- (note 3) -0.3 to 18 V
I
in
Current on Inputs ±50 mA
I
o
Current on Outputs ±130 mA
T
oper
Operating Free Air Temperature Range
TS912I/AI/BI -40 to +125
o
C
T
stg
Storage Temperature -65 to +150
o
C
Notes : 1. All voltage values, except differentialvoltage are with respect to network ground terminal.
2. Differential voltagesare thenon-inverting input terminal with respect to the inverting input terminal.
3. The magnitudeof input and outputvoltages mustnever exceed V
CC
+
+0.3V.
OPERATINGCONDITIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage 2.7to 16 V
V
icm
Common Mode Input Voltage Range V
CC
-
-0.2 to V
CC
+
+0.2 V
Non-inverting
Input
Inverting
Input
Internal
Vref
Output
V
CC
V
CC
SCHEMATICDIAGRAM (1/2 TS912)
TS912
2/12
ELECTRICAL CHARACTERISTICS
V
CC
+
=3V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwise specified)
Symbol Parameter
TS912I/AI/BI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage (Vic=Vo=VCC/2) TS912
TS912A TS912B
T
min.
≤ T
amb
≤ T
max.
TS912 TS912A TS912B
10
5 2
12
7 3
mV
DV
io
Input Offset Voltage Drift 5 µV/oC
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current -(note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
200 300
400
µA
CMR Common Mode RejectionRatio V
ic
= 0 to 3V, Vo= 1.5V 70 dB
SVR Supply VoltageRejection Ratio (V
CC
+
= 2.7to 3.3V, VO=VCC/2) 50 80 dB
A
vd
Large SignalVoltage Gain (RL= 10kΩ,VO= 1.2Vto 1.8V)
T
min.
≤ T
amb
≤ T
max.
3 2
10 V/mV
V
OH
High Level Output Voltage (Vid= 1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
2.95
2.9
2.3
2.8
2.1
2.96
2.6 2
V
V
OL
Low Level Output Voltage (Vid= -1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
30 300 900
50 70
400
100 600
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
20 20
40
40
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 0.8
MHz
SR
+
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1.3Vto 1.7V) 0.4 V/µs
SR
-
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1.3Vto 1.7V) 0.3 V/µs
∅m PhaseMargin 30 Degrees
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
Note 1: Maximum values including unavoidable inaccuracies of theindustrial test.
TS912
3/12
ELECTRICALCHARACTERISTICS
V
CC
+
=5V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwisespecified)
Symbol Parameter
TS912I/AI/BI
Unit
Min. Typ. Max.
V
io
InputOffset Voltage (Vic=Vo=VCC/2) TS912
TS912A TS912B
T
min.
≤ T
amb
≤ T
max.
TS912 TS912A TS912B
10
5 2
12
7 3
mV
DV
io
InputOffset Voltage Drift 5 µV/oC
I
io
InputOffset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
InputBias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
SupplyCurrent (per amplifier,A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
230 350
450
µA
CMR Common Mode Rejection Ratio
V
ic
= 1.5 to 3.5V, Vo= 2.5V 60 85
dB
SVR SupplyVoltage Rejection Ratio (V
CC
+
= 3 to 5V, VO=VCC/2) 55 80 dB
A
vd
LargeSignal Voltage Gain (RL= 10kΩ,VO= 1.5Vto 3.5V)
T
min.
≤ T
amb
≤ T
max.
10
7
40 V/mV
V
OH
High LevelOutput Voltage (Vid= 1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
4.95
4.9
4.25
4.8
4.1
4.95
4.55
3.7
V
V
OL
Low Level Output Voltage (Vid= -1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
40 350
1400
50 100 500
150 750
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
45 45
65 65
mA
GBP GainBandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 1
MHz
SR
+
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1V to 4V) 0.8 V/µs
SR
-
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1V to 4V) 0.6 V/µs
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
V
O1/VO2
ChannelSeparation (f = 1kHz) 120 dB
∅m Phase Margin 30 Degrees
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS912
4/12
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