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TS912AID
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SGS Thomson Microelectronics TS912IN, TS912ID, TS912BIN, TS912BID, TS912AIN Datasheet

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TS912
RAIL TO RAIL
CMOS DUALOPERATIONALAMPLIFIER
April 1999
.
RAILTO RAIL INPUTAND OUTPUT VOLTAGERANGES
.
TO 16V
.
EXTREMELYLOW INPUTBIAS CURRENT : 1pA typ
.
LOW INPUT OFFSETVOLTAGE: 2mVmax.
.
SPECIFIEDFOR 600Ω AND 100Ω LOADS
.
LOW SUPPLYCURRENT : 200µA/Ampli (VCC = 3V)
.
ESD TOLERANCE: 3KV
.
LATCH-UP IMMUNITY
.
MACROMODEL INCLUDEDIN THIS SPECIFICATION
1 2 3 45
6
7
8
-
+
-
+
Inverting Input 1
Output 1
Non-inverting Input 1
V
CC
V
CC
+
Output 2
Inverting Input 2 Non-inverting Input 2
PIN CONNECTIONS(top view)
DESCRIPTION
The TS912 is a RAIL TO RAILCMOS dual opera­tional amplifier designedto operatewithasingleor dual supplyvoltage. The input voltage range V
icm
includes the two
supplyrails V
CC
+
and V
CC
-
.
The outputreaches :
•
V
CC
-
+40mV V
CC
+
-50mV with RL= 10kΩ
•
V
CC
-
+350mV V
CC
+
-350mV with RL= 600Ω This productoffers abroad supply voltage operat­ing rangefrom 2.7V to16V anda supplycurrentof only 200µA/amp.(V
CC
= 3V). Source and sink output current capability is typi­cally 40mA (at V
CC
= 3V), fixed by an internal limitationcircuit. STMicroelectronicsis offeringa quadop-ampwith the same features: TS914.
ORDER CODES
Part Number Temperature Range
Package ND
TS912I/AI/BI -40, +125
o
C ••
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
1/12
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC
Supply Voltage - (note 1) 18 V
V
id
Differential InputVoltage - (note 2) ±18 V
V
i
Input Voltage- (note 3) -0.3 to 18 V
I
in
Current on Inputs ±50 mA
I
o
Current on Outputs ±130 mA
T
oper
Operating Free Air Temperature Range
TS912I/AI/BI -40 to +125
o
C
T
stg
Storage Temperature -65 to +150
o
C
Notes : 1. All voltage values, except differentialvoltage are with respect to network ground terminal.
2. Differential voltagesare thenon-inverting input terminal with respect to the inverting input terminal.
3. The magnitudeof input and outputvoltages mustnever exceed V
CC
+
+0.3V.
OPERATINGCONDITIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage 2.7to 16 V
V
icm
Common Mode Input Voltage Range V
CC
-
-0.2 to V
CC
+
+0.2 V
Non-inverting
Input
Inverting
Input
Internal
Vref
Output
V
CC
V
CC
SCHEMATICDIAGRAM (1/2 TS912)
TS912
2/12
ELECTRICAL CHARACTERISTICS
V
CC
+
=3V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwise specified)
Symbol Parameter
TS912I/AI/BI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage (Vic=Vo=VCC/2) TS912
TS912A TS912B
T
min.
≤ T
amb
≤ T
max.
TS912 TS912A TS912B
10
5 2
12
7 3
mV
DV
io
Input Offset Voltage Drift 5 µV/oC
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current -(note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
200 300
400
µA
CMR Common Mode RejectionRatio V
ic
= 0 to 3V, Vo= 1.5V 70 dB
SVR Supply VoltageRejection Ratio (V
CC
+
= 2.7to 3.3V, VO=VCC/2) 50 80 dB
A
vd
Large SignalVoltage Gain (RL= 10kΩ,VO= 1.2Vto 1.8V)
T
min.
≤ T
amb
≤ T
max.
3 2
10 V/mV
V
OH
High Level Output Voltage (Vid= 1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
2.95
2.9
2.3
2.8
2.1
2.96
2.6 2
V
V
OL
Low Level Output Voltage (Vid= -1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
30 300 900
50 70
400
100 600
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
20 20
40
40
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 0.8
MHz
SR
+
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1.3Vto 1.7V) 0.4 V/µs
SR
-
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1.3Vto 1.7V) 0.3 V/µs
∅m PhaseMargin 30 Degrees
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
Note 1: Maximum values including unavoidable inaccuracies of theindustrial test.
TS912
3/12
ELECTRICALCHARACTERISTICS
V
CC
+
=5V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwisespecified)
Symbol Parameter
TS912I/AI/BI
Unit
Min. Typ. Max.
V
io
InputOffset Voltage (Vic=Vo=VCC/2) TS912
TS912A TS912B
T
min.
≤ T
amb
≤ T
max.
TS912 TS912A TS912B
10
5 2
12
7 3
mV
DV
io
InputOffset Voltage Drift 5 µV/oC
I
io
InputOffset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
InputBias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
SupplyCurrent (per amplifier,A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
230 350
450
µA
CMR Common Mode Rejection Ratio
V
ic
= 1.5 to 3.5V, Vo= 2.5V 60 85
dB
SVR SupplyVoltage Rejection Ratio (V
CC
+
= 3 to 5V, VO=VCC/2) 55 80 dB
A
vd
LargeSignal Voltage Gain (RL= 10kΩ,VO= 1.5Vto 3.5V)
T
min.
≤ T
amb
≤ T
max.
10
7
40 V/mV
V
OH
High LevelOutput Voltage (Vid= 1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
4.95
4.9
4.25
4.8
4.1
4.95
4.55
3.7
V
V
OL
Low Level Output Voltage (Vid= -1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
40 350
1400
50 100 500
150 750
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
45 45
65 65
mA
GBP GainBandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 1
MHz
SR
+
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1V to 4V) 0.8 V/µs
SR
-
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 1V to 4V) 0.6 V/µs
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
V
O1/VO2
ChannelSeparation (f = 1kHz) 120 dB
∅m Phase Margin 30 Degrees
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS912
4/12
ELECTRICALCHARACTERISTICS
V
CC
+
=10V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unless otherwise specified)
Symbol Parameter
TS912I/AI/BI
Unit
Min. Typ. Max.
V
io
InputOffset Voltage (Vic=Vo=VCC/2) TS912
TS912A TS912B
T
min.
≤ T
amb
≤ T
max.
TS912 TS912A TS912B
10
5 2
12
7 3
mV
DV
io
InputOffset Voltage Drift 5 µV/oC
I
io
InputOffset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
InputBias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
SupplyCurrent (per amplifier,A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
400 600
700
µA
CMR Common Mode Rejection Ratio V
ic
= 3 to 7V, Vo=5V
V
ic
= 0 to 10V, Vo=5V6050
90 75
dB
SVR SupplyVoltage Rejection Ratio (V
CC
+
= 5 to 10V, VO=VCC/2) 60 90 dB
A
vd
LargeSignal Voltage Gain (RL= 10kΩ,VO= 2.5Vto 7.5V)
T
min.
≤ T
amb
≤ T
max.
15 10
50 V/mV
V
OH
High LevelOutput Voltage (Vid= 1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
9.95
9.85 9
9.8
8.8
9.95
9.35
7.8
V
V
OL
Low Level Output Voltage (Vid= -1V) RL= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
50
650
2300
50 150 800
150 900
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
45 50
65 75
mA
GBP GainBandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 1.4
MHz
SR
+
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 2.5Vto 7.5V) 1.3 V/µs
SR
-
Slew Rate (A
VCL
=1,RL= 10kΩ,CL= 100pF, Vi= 2.5Vto 7.5V) 0.8 V/µs
∅m Phase Margin 40 Degrees
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
THD TotalHarmonic Distortion
(A
VCL
=1,RL= 10kΩ,CL= 100pF, VO= 4.75V to 5.25V,f = 1kHz) 0.024
%
C
in
InputCapacitance 1.5 pF
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS912
5/12
TYPICALCHARACTERISTICS
CC
SUP P LY VOLTAGE, V (V)
0481216
T=25 C A=1 V=V /2
amb
VCL
OCC
CC
µ
SUPPLY CURRENT, I (
A)
600
500
400
300
200
100
Figure 1 : SupplyCurrent (eachamplifier)
vs Supply Voltage
25 50 75 100 125
INPUT BIAS CURRENT, I (pA)
ib
V = 10V V=5V No load
CC
i
100
10
1
amb
TEMPERATURE, T ( C)
Figure2 : Input Bias Current vs Temperature
1
14 28 42 56 70
OUTPUT VOLTAGE, V (V)
OL
amb
id
T=25C V = -100mV
V = +5V
CC
V = +3V
CC
0
OL
OUTPUT CURRENT, I (mA)
2
3
4
5
Figure 4a : Low Level OutputVoltage vs Low
Level Output Current
2
OUTPUT VOLTAGE, V (V)
OL
amb id
T=25C V = -100mV
0
V=10V
CC
V = 16V
CC
OL
OUTPUT CURRENT, I (mA)
4
6
8
10
14 28 42 56 70
Figure4b : Low Level OutputVoltage vs Low
Level Output Current
5
-70 -56 -42 -28 -14 0
OUTPUT VOLTAGE, V (V)
OH
amb id
T=25C V = 100mV
V = +5V
CC
V = +3V
CC
4
3
2
1
0
OH
OUTPUT CURRENT, I (mA)
Figure 3a : High Level Output Voltage vs High
Level Output Current
4
0
OUTPUT VOLTAGE, V (V)
OH
V = +16V
CC
V = + 10V
CC
OH
OUTPUT CURRENT, I (mA)
12
8
20
16
-70 -56 -42 -28 -14 0
amb
id
T=25C V = 100mV
Figure3b : High Level OutputVoltage vsHigh
Level Output Current
TS912
6/12
50 40 30 20
10
0
-10
GAIN (dB)
PHASE (Degrees)
0 45 90 135 180
FREQUENCY, f (Hz)
PHASE
GAIN
Phase Margin
Gain Bandwidth Product
6
10
10
23
10
4
10510
7
10
T=25 C V = 10V R = 10k
Ω
C = 100pF A = 100
amb
CC
L L
VCL
Figure 5a : Gain andPhase vs Frequency
50 40 30
20 10
0
-
10
GAIN (dB)
PHASE (Degrees)
0 45 90 135 180
FREQUENCY, f(Hz)
PHASE
GAIN
Phase Margin
Gain Bandwidth Product
6
10
10
23
10
4
10
5
10
7
10
T=25 C V=10V R = 600
Ω
C = 100pF A = 100
amb
CC
L L
VCL
Figure5b : Gain and Phasevs Frequency
SUPPLYVOLTAGE, V (V)
CC
0481216
1800
GAINBANDW. PROD., GBP (kHz)
T=25 C R = 10k
Ω
C = 100pF
amb
L L
1400
1000
600
200
Figure 6a : Gain BandwidthProduct vs
SupplyVoltage
SUPPLYVOLTAGE, V (V)
CC
0481216
GAIN BANDW. PROD., GBP (kHz)
T=25 C R = 600
Ω
C =100pF
amb
L L
1800
1400
1000
600
200
Figure6b : Gain bandwidthProduct vs
SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)
T=25 C R = 10k
Ω
C =100pF
amb
L L
φ
Figure 7a : Phase Margin vs SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)φ
T=25 C R=600
Ω
C =100pF
amb
L L
Figure7b : Phase Marginvs Supply Voltage
TS912
7/12
150
100
50
0
10 100
1000
10000
FREQUENCY (Hz)
=10V
=25 CT
amb
V
CC
=100
Ω
R
S
EQUIVALENT INPUT
VOLTAGE NOISE (nV/VHz)
Figure 8 : InputVoltage Noise vsFrequency
TS912
8/12
** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS: * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS912_3 1 3 2 4 5 (analog) ********************************************************** .MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F * INPUT STAGE CIP 2 51.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 51 RIP 10 116.500000E+00 RIN 15 16 6.500000E+00 RIS 11 151.271505E+01 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14DC 0 IPOL 13 5 4.000000E-05 CPS 11 15 2.125860E-08 DINN 1713 MDTH 400E-12 VIN 17 50.000000e+00 DINR 1518 MDTH 400E-12 VIP 4 18 0.000000E+00 FCP 4 5 VOFP 5.000000E+00 FCN 5 4VOFN 5.000000E+00 * AMPLIFYING STAGE FIP 5 19 VOFP 2.750000E+02 FIN 5 19 VOFN 2.750000E+02 RG1 19 5 1.916825E+05 RG2 19 4 1.916825E+05 CC 1929 2.200000E-08
HZTP 30 29 VOFP 1.3E+03 HZTN 5 30 VOFN 1.3E+03 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3800 VIPM 28 4 150 HONM 21 27 VOUT 3800 VINM 5 27 150 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 75 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.724 HSCP 68 25 VSCP1 0.8E8 DON 69 19 MDTH 400E-12 VON 24 5 1.7419107 HSCN 24 69 VSCN1 0.8E+08 VSCTHP 60 61 0.0875 ** VSCTHP = le seuil au dessus devio * 500 ** c.a.d 275U-000Udus al’offset DSCP1 61 63 MDTH 400E-12 VSCP1 6364 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.55 ** VSCTHN = le seuil au dessous devio * 2000 ** c.a.d -375U-000U dus al’offset ESCP 60 0 2 1500 ESCN 70 0 2 1 -2000 .ENDS
Applies to: TS912 (VCC= 3V)
ELECTRICALCHARACTERISTICS V
CC
+
=3V,V
CC
-
=0V,RL,CLconnectedto V
CC/2,Tamb
=25oC
(unlessotherwisespecified)
Symbol Conditions Value Unit
V
io
0mV
A
vd
RL= 10kΩ 10 V/mV
I
CC
No load, peroperator 200 µA
V
icm
-0.2 to3.2 V
V
OH
RL= 10kΩ 2.96 V
V
OL
RL= 10kΩ 30 mV
I
sink
VO=3V 40 mA
I
source
VO=0V 40 mA
GBP R
L
= 10k
Ω,
CL= 100pF 0.8 MHz
SR R
L
= 10k
Ω,
CL= 100pF 0.3 V/µs
TS912
9/12
** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS: * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY * 6 STANDBY .SUBCKT TS912_5 1 3 2 4 5 (analog) ********************************************************** .MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F * INPUT STAGE CIP 2 51.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 51 RIP 10 116.500000E+00 RIN 15 16 6.500000E+00 RIS 11 157.322092E+00 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14DC 0 IPOL 13 5 4.000000E-05 CPS 11 15 2.498970E-08 DINN 1713 MDTH 400E-12 VIN 17 50.000000e+00 DINR 1518 MDTH 400E-12 VIP 4 18 0.000000E+00 FCP 4 5 VOFP 5.750000E+00 FCN 5 4VOFN 5.750000E+00 ISTB0 5 4 500N * AMPLIFYING STAGE FIP 5 19 VOFP 4.400000E+02 FIN 5 19 VOFN 4.400000E+02 RG1 19 5 4.904961E+05 RG2 19 4 4.904961E+05
CC 1929 2.200000E-08 HZTP 30 29 VOFP 1.8E+03 HZTN 5 30 VOFN 1.8E+03 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3800 VIPM 28 4 230 HONM 21 27 VOUT 3800 VINM 5 27 230 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 82 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.724 HSCP 68 25 VSCP1 0.8E+08 DON 69 19 MDTH 400E-12 VON 24 5 1.7419107 HSCN 24 69 VSCN1 0.8E+08 VSCTHP 60 61 0.0875 ** VSCTHP = le seuil au dessus devio * 500 ** c.a.d 275U-000Udus al’offset DSCP1 61 63 MDTH 400E-12 VSCP1 6364 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.55 ** VSCTHN = le seuil au dessous devio * 2000 ** c.a.d -375U-000U dus al’offset ESCP 60 0 2 1500 ESCN 70 0 2 1 -2000 .ENDS
Applies to: TS912 (VCC= 5V)
ELECTRICALCHARACTERISTICS V
CC
+
=5V,V
CC
-
=0V,RL,CLconnectedto V
CC/2,Tamb
=25oC
(unless otherwisespecified)
Symbol Conditions Value Unit
V
io
0mV
A
vd
RL= 10kΩ 50 V/mV
I
CC
No load, per operator 230 µA
V
icm
-0.2 to5.2 V
V
OH
RL= 10kΩ 4.95 V
V
OL
RL= 10kΩ 40 mV
I
sink
VO=5V 65 mA
I
source
VO=0V 65 mA
GBP R
L
= 10k
Ω,
CL= 100pF 1 MHz
SR R
L
= 10k
Ω,
CL= 100pF 0.8 V/µs
TS912
10/12
PACKAGEMECHANICALDATA
8 PINS- PLASTICDIP
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430 E 7.95 9.75 0.313 0.384
e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300
F 6.6 0260
i 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060
TS912
11/12
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PACKAGEMECHANICALDATA
8 PINS- PLASTICMICROPACKAGE (SO)
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45
o
(typ.) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8
o
(max.)
TS912
12/12
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