
1/7
1.225V MICROPOWER VOLTAGE REFERENCE
.
1.225V TYP OUTPUT VOLTAGE
.
ULTRA LOW OPERATING CURRENT : 40µA
typ.
.
HIGH PRECISION @ 25oC
+/-2% (Standard version)
+/-1% (A grade)
+/-0.5% (B grade)
.
HIGH STABILITYWHEN USED WITH
CAPACITIVE LOADS
.
WIDE TEMPERATURERANGE : -40 to +85oC
.
T092 & SOT23-3 PACKAGES
DESCRIPTION
TheTS821 isamicropowerintegrated circuitwhich
is a high stability, two terminals, band gap reference providing a stableoutput voltage over the industrial temperature range (-40 to +85oC). The
minimum operating current is guaranteed at 50µA
over the full operating temperature range.
APPLICATIONS
.
Computers
.
Instrumentation
.
Battery chargers
.
Switch Mode Power Supply
.
Battery operated equipements
TS821
Z
TO92
(Plastic Package)
L
SOT-23L
(Plastic Micropackage)
ORDER CODES
Precision TO92 SOT23-3
SOT23
Marking
2% TS821IZ TS821ILT L213
1% TS821AIZ TS821AILT L212
0.5% TS821BIZ TS821BILT L211
Single temperature range: -40 to +85
o
C
PIN CONNECTIONS (top view)
May 2000
NC Anod e
123
Cathode
TO92
1
2
3
*
Anode
Cathode
SOT23-3
* This pin must be leftfloating
or conn e cte d to pin 2

2/7
TS821
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
k
Reverse Breakdown Current 20 mA
I
f
Forward Current 10 mA
P
d
Power Dissipation SOT23-3
TO92
360
625
mW
T
oper
Operating Free Air Temperature Range -40 to+85
o
C
T
stg
Storage Temperature -65 to +150
o
C
OPERATINGCONDITIONS
Symbol Parameter Value Unit
I
rmin
Minimum OperatingCurrent 45
µA
I
rmax
Maximum Operating Current 12 mA
ELECTRICAL CHARACTERISTICS
TS821 (2% Precision)
T
amb
=25oC (unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
k
Reverse Breakdown Voltage
I
k
= 100µA@T
amb
=25oC
1.200 1.225 1.250 V
Reverse Breakdown Voltage
Tolerance
I
k
= 100µA@T
amb
=25oC
-40
o
C<T
amb
< +85oC
-25
-36
+25
+36
mV
I
kmin
Minimum Operating Current T
amb
=25oC4045
µA
-40
o
C<T
amb
< +85oC50
µA
∆V
ref
/∆T
Average Temperature Coefficient
IK= 100µA
150 ppm/
o
C
∆V
k
/∆I
k
Reverse Breakdown Voltage
Change with Operating Current
Change
I
kmin<Ik
< 1mA @ T
amb
=25oC
-40
o
C<T
amb
< +85oC
0.3 0.7
1
mV
1mA < I
k
< 12mA @ T
amb
=25oC
-40
o
C<T
amb
< +85oC
2.5 5
7
mV
R
ka
Static Impedance
∆I
k
=45µA to 1mA
0.25 0.5
Ω
K
vh
Long Term Stability
I
K
= 100µA, t = 1000hrs
T
amb
=25oC
120 ppm
en Wideband Noise
I
K
= 100µA
10Hz <f < 10kHz
200
nV Hz
Note : Pdhas been calculatedwith T
amb
=25oC andTj= 125oC and
R
thja
= 200oC/W for TO92 package
R
thja
= 340oC/W for SOT23 package

TS821
3/7
ELECTRICAL CHARACTERISTICS
TS821B (0.5% Precision)
T
amb
=25oC (unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
k
Reverse Breakdown Voltage
I
k
= 100µA@T
amb
=25oC
1.219 1.225 1.231 V
Reverse Breakdown Voltage
Tolerance
I
k
= 100µA@T
amb
=25oC
-40
o
C<T
amb
< +85oC
-6
-14
+6
+14
mV
I
kmin
Minimum Operating Current T
amb
=25oC4045
µA
-40
o
C<T
amb
< +85oC50
µA
∆Vref/∆T
Average Temperature Coefficient
I
K
= 100µA
120 ppm/
o
C
∆V
k
/∆I
k
Reverse Breakdown Voltage
Change with Operating Current
Change
I
kmin<Ik
< 1mA @ T
amb
=25oC
-40
o
C<T
amb
< +85oC
0.3 0.7
1
mV
1mA < I
k
< 12mA @ T
amb
=25oC
-40
o
C<T
amb
< +85oC
2.5 5
7
mV
R
ka
Static Impedance
∆I
k
=45µA to 1mA
0.25 0.5
Ω
K
vh
Long Term Stability
I
K=
100µA, t = 1000hrs
T
amb
=25oC
120 ppm
en Wideband Noise
I
K
= 100µA
10Hz <f < 10kHz
200 nV/ Hz
ELECTRICAL CHARACTERISTICS
TS821A (1% Precision)
T
amb
=25oC (unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
k
Reverse Breakdown Voltage
I
k
= 100µA@T
amb
=25oC
1.213 1.225 1.237 V
Reverse Breakdown Voltage
Tolerance
I
k
= 100µA@T
amb
=25oC
-40
o
C<T
amb
< +85oC
-12
-24
+12
+24
mV
I
kmin
Minimum Operating Current T
amb
=25oC4045
µA
-40
o
C<T
amb
< +85oC50
µA
∆V
ref
/∆T
Average Temperature Coefficient
IK= 100µA
150 ppm/
o
C
∆V
k
/∆I
k
Reverse Breakdown Voltage
Change with Operating Current
Change
I
kmin<Ik
< 1mA @ T
amb
=25oC
-40
o
C<T
amb
< +85oC
0.3 0.7
1
mV
1mA < I
k
< 12mA @ T
amb
=25oC
-40
o
C<T
amb
< +85oC
2.5 5
7
mV
R
ka
Static Impedance
∆I
k
=45µA to 1mA
0.25 0.5
Ω
K
vh
Long Term Stability
I
K=
100µΑ, t = 1000hrs
T
amb
=25oC
120 ppm/kHr
en Wideband Noise
I
K
= 100µA
10Hz <f < 10kHz
200 nV/ Hz

TS821
4/7
Reference Voltageversus Cathode Current Reference Voltageversus Cathode Current
Reference Voltageversus TemperatureTestCircuit
Dynamic Impedance versus Temperature Noise Voltage versus Frequency

TS821
5/7
Pulse Response for Ik = 100mA TestCircuit for Pulse Response at Ik = 100mA
TestCircuit for Pulse Response at Ik = 1mAPulse Response for Ik = 1mA

TS821
6/7
PACKAGEMECHANICAL DATA
3 PINS - PLASTIC PACKAGETO92
Dim.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
L 1.27 0.05
B 3.2 3.7 4.2 0.126 0.1457 0.1654
O1 4.45 5.00 5.2 0.1752 0.1969 0.2047
C 4.58 5.03 5.33 0.1803 0.198 0.2098
K 12.7 0.5
O2 0.407 0.5 0.508 0.016 0.0197 0.02
a 0.35 0.0138

TS821
7/7
Information furnishedis believed to beaccurate andreliable. However,STMicroelectronics assumes no responsibilityfor the consequences of use of such information nor for any infringement of patents orother rights of thirdparties whichmay result from itsuse.
No license isgrantedbyimplication or otherwise under any patentor patentrights of STMicroelectronics. Specifications mentioned
in thispublication are subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use ascritical components in lifesupport devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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PACKAGEMECHANICAL DATA
3 PINS -TINY PACKAGE (SOT23)
Dim.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 0.890 1.120 0.035 0.044
A1 0.010 0.100 0.0004 0.004
A2 0.880 0.950 1.020 0.037 0.040
b 0.300 0.500 0.012 0.020
c 0.080 0.200 0.003 0.008
D 2.800 2.900 3.040 0.110 0.114 0.120
E 2.100 2.640 0.083 0.104
E1 1.200 1.300 1.400 0.047 0.051 0.055
e 0.950 0.037
e1 1.900 0.075
L 0.400 0.500 0.600 0.016 0.020 0.024
L1 0.540 0.021
k0° 8°