SGS Thomson Microelectronics TYN808, TYN1008, TYN608, TS820-700H, TS820-700B Datasheet
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®
TN8, TS8 and TYNx08 Series
SENSITIVE & STANDARD 8A SCRs
April 2002 - Ed: 4A
MAIN FEATURES:
DESCRIPTION
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
Symbol Value Unit
I
T(RMS)
8A
V
DRM/VRRM
600 to 1000 V
I
GT
0.2 to 15 mA
ABSOLUTE RATINGS (lim iting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
Tc = 110°C 8
A
IT
(AV)
Average on-state current (180° conduction angle)
Tc = 110°C 5
A
TS8/TN8 TYN
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
73 100
A
tp = 10 ms 70 95
I
²
tI
²
t Value for fusing
tp = 10 ms Tj = 25°C 24.5 45
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x IGT , tr ≤ 100 ns
F = 60 Hz Tj = 125°C 50 A/µs
I
GM
Peak gate current tp = 20 µs Tj = 125°C 4 A
P
G(AV)
Average gate power dissipation Tj = 125°C 1 W
T
stg
Tj
Storage junction temperature range
Operating junction temp erature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage (for TN8 & TYN only) 5
V
A
K
G
A
G
A
K
DPAK
(TS8-B)
(TN8-B)
A
A
K
G
IPAK
(TS8-H)
(TN8-H)
A
A
K
G
G
A
A
K
TO-220AB
(TS8-T)
TO-220AB
(TYNx)
TN8, TS8 and TYNx08 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SENSITIVE
■ STANDARD
THERMAL RESISTANCES
S= copper surface under tab
Symbol Test Conditions TS820 Unit
I
GT
VD = 12 V RL = 140 Ω
MAX. 200
µA
V
GT
MAX. 0.8 V
V
GD
VD = V
DRM
RL = 3.3 kΩ RGK = 220 Ω
Tj = 125°C MIN.
0.1 V
V
RG
IRG = 10 µA
MIN.
8V
I
H
I
T
= 50 mA RGK = 1 kΩ
MAX. 5 mA
I
L
IG = 1 mA RGK = 1 kΩ
MAX. 6 mA
dV/dt
V
D
= 65 % V
DRM
RGK = 220 Ω
Tj = 125°C MIN. 5 V/µs
V
TM
ITM = 16 A tp = 380 µs
Tj = 25°C MAX. 1.6 V
V
t0
Threshold voltage Tj = 125°C MAX. 0.85 V
R
d
Dynamic resistance Tj = 125°C MAX. 46 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
RGK = 220 Ω
Tj = 25°C MAX. 5 µA
Tj = 125°C 1 mA
Symbol Test Conditions TN805 TN815 TYNx08 Unit
I
GT
VD = 12 V RL = 33 Ω
MIN. 0.5 2 2 mA
MAX. 5 15 15
V
GT
MAX. 1.3 V
V
GD
VD = V
DRM
RL = 3.3 kΩ
Tj = 125°C MIN.
0.2 V
I
H
IT = 100 mA Gate open
MAX. 25 40 30 mA
I
L
IG = 1.2 I
GT
MAX.
30 50 70
mA
dV/dt
V
D
= 67 % V
DRM
Gate open
Tj = 125°C MIN. 50 150 150 V/µs
V
TM
ITM = 16 A tp = 380 µs
Tj = 25°C
MAX.
1.6
V
V
t0
Threshold voltage Tj = 125°C
MAX.
0.85
V
R
d
Dynamic resistance Tj = 125°C
MAX.
46
mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25°C MAX. 5 µA
Tj = 125°C 2
mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC)
20
°C/W
R
th(j-a)
Junction to ambient (DC) TO-220AB 60 °C/W
IPAK 100
S = 0.5 cm
²
DPAK 70
/T
TN8, TS8 and TYNx08 Series
3/9
PRODUCT SELECTOR
ORDERING INFORMATION
Part Number
Voltage (xxx)
Sensitivity
Package
600 V 700 V 800 V 1000 V
TN805-xxxB X X 5 mA DPAK
TN805-xxxH X X 5 mA IPAK
TN815-xxxB X X 15 mA DPAK
TN815-xxxH X X 15 mA IPAK
TS820-xxxB X X 0.2 mA DPAK
TS820-xxxH X X 0.2 mA IPAK
TS820-xxxT X X 0.2 mA TO-220AB
TYNx08 X X X 15 mA TO-220AB
TN 8 05 - 600 B (-TR)
STANDARD
SCR
SERIES
CURRENT:8A
SENSITIVITY:
05: 5mA
15: 15mA
VOLTAGE:
600: 600V
800: 800V
PACKAGE:
B: DPAK
H: IPAK
PACKING MODE:
Blank:Tube
-TR: DPAKTape & Reel
TS 8 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
CURRENT: 8A
SENSITIVITY:
20: 200µA
VOLTAGE:
600: 600V
700: 700V
PACKAGE:
B: DPAK
H: IPAK
T:TO-220AB
PACKING MODE:
Blank:Tube
-TR: DPAKTape & Reel
VOLTAGE:
6: 600V
8: 800V
10: 1000V
STANDARD
SCR
SERIES
CURRENT: 8A
TYN 6 08 (RG)
PACKING MODE
Blank: Bulk
RG:Tube
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