SGS Thomson Microelectronics TS616IDWT, TS616IDW, TS616 Datasheet

TS616

DUAL WIDE BAND OPERATIONAL AMPLIFIER

WITH HIGH OUTPUT CURRENT

■ LOW NOISE : 2.5nV/√Hz

■ HIGH OUTPUT CURRENT : 420mA

■ VERY LOW HARMONIC AND INTERMODU-

LATION D I S TORTIO N

■ HIGH SLEW RA TE : 420V/µs

■ -3dB BANDWIDTH : 40MHz@gain=12dB on

25Ω load single ended.

■ 20.7Vp-p DIFFERENTIAL OUTPUT SWING

on 50Ω load, 12V power supply

■ CURRENT FEEDBACK STRUCTURE

■ 5V to 12V POWER SUPPLY

■ SPECIFIED FOR 20Ω and 50Ω

DIFFERENTIAL LOAD

DESCRIPTION

The TS616 is a dual operational am plifier featuring a high output current o f 410m A. T he drivers can be configured differentially for driving signals in telecommunication systems using multiple carriers. The TS616 is ideally suited for xDSL (High Speed Asymmetrical Digital Subscriber Line) applications. This circuit is c apable of driving a 10 Ω or 25Ω load at ±2.5V, 5V, ±6V or +12V power supply. The TS616 is able to reach a -3dB bandwidth of 40MHz on 25Ω load with a 12dB gain. This device is designed for high slew rates supporting low harmonic distortion and intermodulation.

DW

SO8 Exposed-Pad

(Plastic Micro package)

ORDER CODE

Part Number Temperature Range Package

TS616IDW -40, +85°C DW TS616IDWT -40, +85°C DW

DW = Small Outline Package with Exposed-Pad, T = Tape & Real

PIN CONNECTIONS (top view)

Output1

1

1 2

VCC -

2

-

+

3

3 4

4

Inverting Input1 Output2

Non Inverting Input1

VCC +

8

8 7

7

Inverting Input2

6

-

+

Non Inverting Input2

5

APPLICATION

■ Line driver for xDSL

■ Multiple Video Line Driver

December 2002

Cross Section View Showing Exposed-Pad

This pad can be connected to a (-Vcc) copper area on the PCB

1/27

TS616

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

T

R R P

ESD

only pins 1, 4, 7, 8

ESD

only pins 2, 3, 5, 6

Supply voltage

CC

V

Differential Input Voltage

id

V

Input Voltage Range

in

Operating Free Air Temperature Range -40 to + 85 °C

oper

Storage Temperature -65 to +150 °C

std

T

Maximum Junction Temperature 150 °C

j

Thermal Resistance Junction to Case 16 °C/W

thjc

Thermal Resistance Junction to Ambient Area 60 °C/W

thja

Maximum Power Dissipation (@Ta=25°C) for Tj=150°C 2 W

max.

CDM : Charged Device Model HBM : Human Body Model MM : Machine Model

CDM : Charged Device Model HBM : Human Body Model MM : Machine Model Output Short Circuit

1. All voltage values, except differential voltage are with respect to network terminal.

2. Differential voltage are non-inverting input terminal with respect to the inverting input terminal.

3. The magnitude of input and output voltage must never exceed V

4. An output current limitation protects the circuit from transient currents. Short-circuits can cause excessive heating. Destructive dissipation can result from short circuit on amplifiers.

1)

2)

3)

±7 V ±2 V ±6 V

1.5 2

200

1.5 2

100

4)

+0.3V.

CC

kV kV

V

kV kV

V

OPERATING CONDITIONS

Symbol Parameter Value Unit

V

Power Supply Voltage ±2.5 to ±6 V

CC

+1.5V to +VCC-1.5V

Common Mode Input Voltage

icm

-V

CC

TYPICAL APPLICATION:

Differential Line Driver for xDSL Applications

8

3

2

Vi

R1

R4

Vi Vo

4

5

+

1/2TS615

1/2TS616

1/2TS615

1/2TS616

_

R2

GND

R3

_

1/2TS615

1/2TS616

1/2TS615

1/2TS616

+

4

+Vcc

-Vcc

Ω

12.5

1

Vo

12.5

Vo

25

Ω

1:2

100

Ω

V

2/27

TS616

ELECTRICAL CHARACTERISTICS

V

= ±6Volts, Rfb=910Ω,T

CC

Note: As described on page 24 (table 71), the TS616 requires a 620Ω feedback resistor for an optimized bandwidth with a gain of 12B for a 12V power supply. Nevertheless, due to production test constraints, the TS616 is tested with the same feedback resistor for 12V and 5V power su ppl i es (910Ω).

Symbol Parameter Test Condition Min. Typ. Max. Unit

DC PERFORMANCE

V

Input Offset Voltage

io

V

∆

Z

C

CMR

SVR

Differential Input Offset Voltage

io

I

Positive Input Bias Current

ib+

I

Negative Input Bias Current

ib-

Input(+) Impedance 82 k

IN+

Z

Input(-) Impedance 54

IN-

Input(+) Capacitance 1 pF

IN+

Common Mode Rejection Ratio 20 log (∆V

/∆Vio)

ic

Supply Voltage Rejection Ratio 20 log (∆V

I

Total Supply Current per Operator No load 13.5 17 mA

CC

/∆Vio)

cc

DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTIC

R

Open Loop Transimpedance

OL

-3dB Bandwidth

Full Power Bandwidth

BW

Gain Flatness @ 0.1dB

Tr Rise Time

Tf Fall Time

Ts Settling Time

SR Slew Rate

V

High Level Output Voltage

OH

V

Low Level Output Voltage

OL

Output Sink Current

I

out

Output Source Current

= 25°C (unless otherwise specified)

amb

T

amb

< T

T

min.

T

amb

T

amb

T

min.

T

amb

T

min.

V

∆

ic

T

min.

V

∆

cc

T

min.

V

out

T

min.

< T

amb

= 25°C

< T

amb

< T

amb

= ±4.5V

< T

amb

=±2.5V to ±6V < T

< T

amb

= 7Vp-p, RL = 25

< T

amb.

Small Signal V A

= 12dB, RL = 25

V

Large Signal V

= 12dB, RL = 25

A

V

Small Signal V

= 12dB, RL = 25

A

V

= 6Vp-p, AV = 12dB, RL

out

= 25

Ω

= 6Vp-p, AV = 12dB, RL

V

out

= 25

Ω

= 6Vp-p, AV = 12dB, RL

V

out

= 25

Ω

= 6Vp-p, AV = 12dB, RL

V

out

= 25

Ω

R

=25Ω Connected to GND

L

R

=25Ω Connected to GND

L

V

= -4Vp

out

< T

T

min.

V

out

T

min.

amb

= +4Vp

< T

amb

< T

max.

<20mVp

out

Ω

=3Vp

out

Ω

<20mVp

out

Ω

max.

1 3.5

1.6

mV

2.5 mV

530

7.2 315

3.1

A

µ

A

µ

Ω

58 64

62

72 81

80

Ω

5 13.5

5.7

dB

M

Ω

25 40

MHz

26

7 MHz

10.6 ns

12.2 ns

50 ns

330 420 V/µs

4.8 5.05 V

-5.3 -5.1 V

-320 -490

-395

330 420

mA

370

3/27

TS616

Note: As described on page 24 (table 71), the TS616 requires a 620Ω feedback resistor for an optimized bandwidth with a gain of 12B for

a 12V power supply. Nevertheless, due to production test constraints, the TS616 is tested with the same feedback resistor for 12V and 5V power su ppl i es (910Ω).

Symbol Parameter Test Condition Min. Typ. Max. Unit

NOISE AND DISTORTION

eN Equivalent Input Noise Voltage F = 100kHz 2.5 nV/√Hz iNp Equivalent Input Noise Current (+) F = 100kHz 15 pA/√Hz iNn Equivalent Input Noise Current (-) F = 100kHz 21 pA/√Hz

= 14Vp-p, AV = 12dB

HD2

HD3

IM2

IM3

2nd Harmonic Distortion (differential configuration)

3rd Harmonic Distortion (differential configuration)

2nd Order Intermodulation Product (differential configuration)

3rd Order Intermodulation Produ ct (differential configuration)

V

out

F= 110kHz, R

= 14Vp-p, AV = 12dB

V

out

F= 110kHz, R

= 50Ω diff.

L

= 50Ω diff.

L

F1= 100kHz, F2 = 110kHz

= 16Vp-p, AV = 12dB

V

out

= 50Ω diff.

R

L

F1= 370kHz, F2 = 400kHz

= 16Vp-p, AV = 12dB

V

out

R

= 50Ω diff.

L

F1 = 100kHz, F2 = 110kHz

= 16Vp-p, AV = 12dB

V

out

= 50Ω diff.

R

L

F1 = 370kHz, F2 = 400kHz

= 16Vp-p, AV = 12dB

V

out

= 50Ω diff.

R

L

-87 dBc

-83 dBc

-76 dBc

-75

-88 dBc

-87

4/27

TS616

ELECTRICAL CHARACTERISTICS

V

= ±2.5Volts, Rfb=910Ω,T

CC

Symbol Parameter Test Condition Min. Typ. Max. Unit

DC PERFORMANCE

V

Input Offset Voltage

io

V

∆

Z

C

CMR

SVR

Differential Input Offset Voltage

io

I

Positive Input Bias Current

ib+

I

Negative Input Bias Current

ib-

Input(+) Impedance 71 k

IN+

Z

Input(-) Impedance 62

IN-

Input(+) Capacitance 1.5 pF

IN+

Common Mode Rejection Ratio 20 log (∆V

/∆Vio)

ic

Supply Voltage Rejection Ratio 20 log (∆V

I

Total Supply Current per Operator No load 11.5 15 mA

CC

/∆Vio)

cc

DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTICS

R

Open Loop Transimpedance

OL

-3dB Bandwidth

BW

Full Power Bandwidth

Gain Flatness @ 0.1dB

Tr Rise Time

Tf Fall Time

Ts Settling Time

SR Slew Rate

V

High Level Output Voltage

OH

V

Low Level Output Voltage

OL

Output Sink Current

I

out

Output Source Current

= 25°C (unless otherwise specified)

amb

T

amb

< T

T

min.

T

amb

T

amb

T

min.

T

amb

T

min.

V

∆

ic

T

min.

V

∆

cc

T

min.

V

out

T

min.

< T

amb

= 25°C

< T

amb

< T

amb

= ±1V

< T

amb.

=±2V to ±2.5V < T

< T

amb.

= 2Vp-p, RL = 10

< T

amb.

Small Signal V

= 12dB, RL = 10

A

V

Large Signal V

= 12dB, RL = 10

A

V

Small Signal V A

= 12dB, RL = 10

V

= 2.8Vp-p, AV = 12dB

out

= 10

R

Ω

L

V

= 2.8Vp-p, AV = 12dB

out

= 10

R

Ω

L

= 2.2Vp-p, AV = 12dB

V

out

= 10

R

Ω

L

= 2.2Vp-p, AV = 12dB

V

out

R

= 10

Ω

L

R

=10Ω Connected to GND

L

R

=10Ω Connected to GND

L

= -1.25Vp

V

out

< T

T

min.

V

out

T

min.

< T

amb

= +1.25Vp

< T

amb

max.

Ω

max.

<20mVp

out

Ω

= 1.4Vp

out

Ω

<20mVp

out

Ω

max.

0.2 2.5

1

2.5 mV 430 7

1.1 11

1.2

55 61

60

63 79

78

24.2

1.5

20 28

MHz

20

5.7 MHz

11 ns

11.5 ns

39 ns

100 130 V/µs

1.5 1.7 V

-1.9 -1.7 V

-300 -400

-360

200 270

240

mV

A

µ

A

µ

Ω

dB

M

Ω

mA

5/27

TS616

Symbol Parameter Test Condition Min. Typ. Max. Unit

NOISE AND DISTORTION

eN Equivalent Input Noise Voltage F = 100kHz 2.5 nV/√Hz iNp Equivalent Input Noise Current (+) F = 100kHz 15 pA/√Hz iNn Equivalent Input Noise Current (-) F = 100kHz 21 pA/√Hz

= 6Vp-p, AV = 12dB

HD2

HD3

IM2

IM3

2nd Harmonic Distortion (differential configuration)

3rd Harmonic Distortion (differential configuration)

2nd Order Intermodulation Product (differential configuration)

3rd Order Intermodulation Produ ct (differential configuration)

V

out

F= 110kHz, R

= 6Vp-p, AV = 12dB

V

out

F= 110kHz, R

= 20Ω diff.

L

= 20Ω diff.

L

F1= 100kHz, F2 = 110kHz

= 6Vp-p, AV = 12dB

V

out

R

= 20Ω diff.

L

F1= 370kHz, F2 = 400kHz V

= 6Vp-p, AV = 12dB

out

= 20Ω diff.

R

L

F1 = 100kHz, F2 = 110kHz

= 6Vp-p, AV = 12dB

V

out

= 20Ω diff.

R

L

F1 = 370kHz, F2 = 400kHz V

= 6Vp-p, AV = 12dB

out

R

= 20Ω diff.

L

-97 dBc

-98 dBc

-86

-88

-90

-85

dBc

6/27

TS616

Figure 1: Load Configuration

Load: RL=25Ω, VCC=±6V

+6V

TS616

+6V

-6V

+

_

25Ω

50Ω

cable

49.9Ω

33Ω

33Ω 1W

1W

cable

Figure 2: Closed Loop Gain vs. Frequency

AV=+1

2

0

-2

-4

-6

-8

(gain (dB)

-10

-12

-14

(Vcc=±2.5V, Rfb=1.1kΩ, Rload=10Ω) (Vcc=±6V, Rfb=750

-16 100 1k 10k 100k 1M 10M 100M

gain

phase

Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±6V)

(Vcc=±2.5V)

(Vcc=±6V)

50Ω

40

20

0

-20

-40

-60

-80

-100

-120

Figure 4: Load Configuration

Load: RL=10Ω, VCC=±2.5V

+2.5V

TS616

+2.5V

-2.5V

10Ω

+

_

11Ω

0.5W

49.9Ω

Figure 5: Closed Loop Gain vs. Frequency

AV=-1

2

0

-2

)

°

Phase (

-4

-6

-8

(gain (dB))

-10

-12

-14

(Vcc=±2.5V, Rfb=1kΩ, Rin=1kΩ , Rload=10Ω) (Vcc=±6V, Rfb=680

-16 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

Ω, Rin=680Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

50Ω

cable

(Vcc=±6V)

50Ω

-140

-160

-180

-200

-220

-240

-260

-280

-300

)

°

Phase (

Figure 3: Closed Loop Gain vs. Frequency

AV=+2

8

6

4

2

0

-2

(gain (dB))

-4

-6

(Vcc=±2.5V, Rfb=1kΩ, Rload=10Ω)

-8

(Vcc=±6V, Rfb=680

-10 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±6V)

(Vcc=±2.5V)

(Vcc=±6V)

40

20

0

-20

-40

-60

-80

-100

-120

Figure 6: Closed Loop Gain vs. Frequency

AV=-2

8

6

4

)

°

Phase (

2

0

-2

(gain (dB))

-4

-6

(Vcc=±2.5V, Rfb=1kΩ, Rin=510Ω, Rload=10Ω)

-8

(Vcc=±6V, Rfb=680

-10 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

Ω, Rin=750//620Ω, Rload=25Ω)

Frequen c y (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

-140

-160

-180

-200

-220

-240

-260

-280

-300

)

°

Phase (

7/27

TS616

Figure 7: Closed Loop Gain vs. Frequency

AV=+4

14

12

10

8

6

4

(gain (dB))

2

0

-2

(Vcc=±2.5V, Rfb=910Ω, Rg=300Ω, Rload=10Ω) (Vcc=±6V, Rfb=620

-4 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

(Vcc=±6V)

Ω, R g =560//330Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

Figure 8: Closed Loop Gain vs. Frequency

AV=+8

20

18

16

14

12

10

(gain (dB))

8

6

4

(Vcc=±2.5V, Rfb=680Ω, Rg=240//160Ω, Rload=10Ω) (Vcc=±6V, Rfb=510

2

100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

(Vcc=±6V)

Ω, Rg=270//100Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

40

20

0

-20

-40

-60

-80

-100

-120

40

20

0

-20

-40

-60

-80

-100

-120

)

°

Phase (

Figure 10: Closed Loop Gain vs. Frequency

AV=-4

14

12

10

8

)

°

Phase (

6

4

(gain (dB))

2

0

(Vcc=±2.5V, Rfb=1kΩ, Rin=320//360Ω, Rload=10Ω)

-2

(Vcc=±6V, Rfb=620

-4 100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc=±2.5V)

(Vcc=±6V)

Ω, Rin=360//270Ω, Rload=25Ω)

Frequency (Hz)

Figure 11: Closed Loop Gain vs. Frequency

AV=-8

20

18

16

14

12

10

(gain (dB))

8

6

4

(Vcc=±2.5V, Rfb=680Ω, Rin=160//180Ω, Rload=10Ω) (Vcc=±6V, Rfb=510

2

100 1k 10k 100k 1M 10M 100M

gain

phase

(Vcc= ± 2. 5V)

(Vcc=±6V)

Ω, Rin=150//110Ω, Rload=25Ω)

Frequency (Hz)

(Vcc=±2.5V)

(Vcc=±6V)

(Vcc=±2.5V)

(Vcc= ± 6V )

-140

-160

-180

-200

-220

-240

-260

-280

-300

-140

-160

-180

-200

-220

-240

-260

-280

-300

)

°

Phase (

)

°

Phase (

Figure 9: Bandwidth vs. Temperature

AV=+4, Rfb=910

50

45

40

35

Bw (MHz)

30

25

20

-40-200 20406080

8/27

Ω

Vcc=±6V Load=25

Vcc=±2.5V Load=10

Ω

Temperature (°C)

Figure 12: Positive Slew Rate

AV=+4, Rfb=620

4

2

(V)

0

OUT

V

-2

-4

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

, V

Ω

=±6V, RL=25

CC

Time (s)

Ω

TS616

Figure 13: Positive Slew Rate

AV=+4, Rfb=910

2

1

(V)

0

OUT

V

-1

-2

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

, V

Ω

CC

=±2.5V, RL=10

Time (s)

Ω

Figure 14: Negative Slew Rate

AV=+4, Rfb=620Ω, VCC=±6V, RL=25

4

2

Ω

Figure 16: Positive Slew Rate

AV= - 4, Rfb=620

4

2

(V)

0

OUT

V

-2

-4

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

, V

Ω

=±6V, RL=25

CC

Time (s)

Ω

Figure 17: Positive Slew Rate

AV= - 4, Rfb=910

2

1

, V

Ω

CC

=±2.5V, RL=10

Ω

(V)

0

OUT

V

-2

-4

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

Time (s)

Figure 15: Negative Slew Rate

AV=+4, Rfb=910

2

1

(V)

0

OUT

V

-1

-2

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

, V

Ω

CC

=±2.5V, RL=10

Time (s)

Ω

(V)

0

OUT

V

-1

-2

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

Time (s)

Figure 18: Negative Slew Rate

AV= - 4, Rfb=620Ω, VCC=±6V, RL=25

4

2

(V)

0

OUT

V

-2

-4

0.0 10.0n 20.0n 30.0n 40.0n 50.0n

Time (s)

Ω

9/27