SGS Thomson Microelectronics TR03-400T Datasheet
TR03-400T
SENSITIVE AND FAST ASYMET RI CAL SCR
PRELIMINARY DATA
FEATURES
VERY FAST SCR : tq = 15µs max.
LOW GATE TRIGGER CURRENT : IGT = 1.5mA max.
DESCRIPTION
G
The TR03 brings the best compromise between a
fast turn off time and a low gate trigger current for
applications where fast switching and sensitive
control is requested.
Packaged in TO220AB, the TR03 uses high performance planar technology.
TO220AB
(Plastic)
ABSOLUTE RAT I NG S (limiting values)
Symbol Parameter Value Unit
A
K
V
DRM
I
T(RMS)
Repetitive peak off-state volta ge 400 V
RMS on-state curr ent
Tc= 85°C 3.5 A
(180° conduction angle)
I
T(AV)
Average on-state current
Tc= 85° C 2 A
(180° conduction angle)
I
TSM
Non repetitive surge peak on-state current
tp = 10ms 20 A
(Tj initial = 25°C)
2
I
tI
dI/dt Critical rate of rise of on-state cur rent
T
stg
T
j
TI Maximum lead temperature for soldering during 10s at
2
t Value for fusing tp = 10ms 2 A2s
100 A/µs
Gate supply I
Storage junction temperature range
Operating junction temperature range
= 150 mA dIG/dt = 1 A/µs
G
- 40 to + 150
- 40 to + 125
260 °C
4.5 mm f rom case
THERMAL RESI STANCES
Symbol Parameter Value Unit
Rth (j-a)
Junction to ambient
60 °C/WV
°C
Rth (j-c) Junction to case for DC 5 ° C/W
April 1995
1/3
TR03-400T
GATE CHARACTERIST ICS (maximum v alues)
P
= 0.5W PGM = 2.5 W (tp = 20 µs) I
G (AV)
ELECTRICAL CHARACTE RISTICS
Symbol Test Condit ion s Type Value Unit
V
I
GT
=6V (DC) RL=100Ω
D
= 0.5 A (tp = 20 µs) V
FGM
Tj= 25°CMAX 1.5 mA
RGM
= 5 V
V
V
GT
V
GD
I
I
H
ITM= 10A tp= 380µsTj= 25°CMAX 2.2 V
V
TM
V
I
DRM
=6V (DC) RL=100Ω
D
= 1kΩ
R
GK
V
D=VDRM
= 100mA Gate open Tj= 25°CTYP 5 mA
T
DRM
RL=3.3kΩ RGK = 1 kΩ
rated
RGK
= 1 kΩ Tj= 25°C MAX 0.01 mA
Tj= 25ÉC MAX 1.2 V
Tj= 125°CMIN 0.2 V
Tj= 125°CMAX 0.2
dV/dt V
tq I
=67%V
D
= 10A VR = -1V
TM
RGK = 1 kΩ Tj= 125°C MIN 20 V/µs
DRM
Tj = 85°C MAX 15 µs
dI/dt = 20 A/µs dV/dt = 20 V/µs
= 67% V
V
D
VGK = -2.5V
DRM
2/3
Loading...