SGS Thomson Microelectronics TPP25011 Datasheet
TPP25011
ApplicationSpecific Discretes
A.S.D.
FEATURES
UNIDIRECTIONALFUNCTION
PROGRAMMABLEBREAKDOWNVOLTAGE
UP TO 250 V
PROGRAMMABLECURRENT LIMITATION
FROM40 mA TO500 mA
SURGECURRENT CAPABILITY
I
=30A 10/1000µs
PP
DESCRIPTION
Dedicated to sensitive telecom equipment
protection, this device can provide both voltage
and current triggered protection with a very tight
tolerance.
Thebreakdownvoltagecan beeasilyprogrammed
byusingan externalzener diode.
A multiple protectionmode can be also performed
when using several zener diodes, providing to
eachline interfacean optimizedprotectionlevel.
The current limiting function is achieved with the
useof a resistorbetweenthegate andthecathode.
Thevalue of the resistorwill determine thelevel of
thedesiredcurrent.
OVERVOLTAGE and OVERCURRENT
PROTECTION for TELECOM LINE
SO8
SCHEMATIC DIAGRAM
COMPLIESWITHTHEFOLLOWINGSTANDARDS:
CCITTK17 :
VDE0433:
CNET : 0.5/700 µs 1.5 kV
FCCpart68 : 2/10 µs 2.5 kV
BELLCORE
TR-NWT-000974:
(*)with seriesresistors or PTC.
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
February 1998- Ed: 4
10/700 µs 1.5 kV
5/310 µs38A
10/700 µs2kV
5/310 µs 40 A (*)
0.2/310 µs38A
2/10 µs 75 A (*)
10/1000 µs1kV
10/1000 µs 30 A (*)
1/7
TPP25011
ABSOLUTE MAXIMUMRATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
I
PP
I
TSM
T
T
Note 1 :
Peakpulse current (seenote 1) 10/1000µs
Nonrepetitivesurge peak on-statecurrent
(F= 50Hz)
Storagetemperaturerange
stg
Maximumjunction temperature
j
Pulse waveform:
10/1000µstr=10µst
5/310µst
2/10µst
=5µst
r
=2µst
r
=1000µs
p
=310µs
p
=10µs
p
5/310µs
2/10µs
tp= 10ms
t=1s
%I
PP
100
50
0
30
40
75
5
3.5
- 55 to + 150
°C
150
t
t
r
p
t
A
A
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
Junctionto ambient
170 °C/W
2/7
ELECTRICAL CHARACTERISTICS
Symbol Parameter
(T
amb
TPP25011
=25°C)
V
RM
I
RM
V
BR
V
BO
I
H
I
BO
I
PP
V
GN
I
G
Stand-offvoltage
Leakagecurrent at stand-offvoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peakpulse current
Gatevoltage
Gatetriggeringcurrent
C Capacitance
1 - OPERATIONWITHOUTGATE
Type IRM@V
max. min. max. min.
µA V V mA V mA mA mA pF
RM
VBR@I
R
VBO@I
note1
BO
max. min.
I
H
note 2
note3
TPP25011 6 60 250 1 340 15 200 180 100
C
max.
2 - OPERATIONWITH GATE
I
Type V
@IGN=30mA
GN
G
min. max. min. max.
note4 V
V
VmAmA
A-C
= 100V
TPP25011 1.05 1.35 5 40
Note 1:
Note 2
Note 3:
See thereference test circuit 1.
: See test circuit 2.
V
= 5V,F = 1MHz
R
3/7
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