SGS Thomson Microelectronics TN815-800B, TN815-700B, TN815-600B, TN815-400B, TN805-800B Datasheet
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FEATURES
I
= 8 A
TRMS
V
= 400 V t o 800 V
DRM
IGT ≤ 5 mA and 15 mA
TN805/TN815-B
SCR’s
A
DESCRIPTION
G
A
The TN805/TN815-B serie of Silicon Controlled
Rectifiers uses a high performance TOPGLASS
K
PNPN technology.
These parts are intended for general purpose
applications using mount technology.
DPAK
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
Tc= 105°C8 A
(180° conduction angle)
I
T(AV)
Mean on-state current
Tc= 105°C5 A
(180° conduction angle)
I
TSM
Non repetitive surge peak on-state current
tp = 8.3 ms 73 A
(Tj initial = 25°C)
tp = 10 ms 70
2
I
tI
dI/dt Critical rate of rise of on-state current
2
t Value for fusing tp = 10ms 24.5 A2s
100 A/µs
= 100 mA dIG /dt = 1 A/µs.
I
G
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
Tl Maximum lead temperature for s oldering during 10s 260
TN805 or TN815
Symbol Parameter
400B 600B 700B 800B
V
DRM
V
RRM
August 1998 - Ed: 1A
Repetitive peak-off voltage
Tj = 125°C
400 600 700 800 V
- 40 to + 150
- 40 to + 125
°
°
Unit
C
C
1/5
TN805/TN815-B
THERMAL RESISTANCES
Symbol Parameter Value Unit
2
Rth(j-a) Junction to ambient (S=0.5cm
)70
°
C/W
Rth(j-c) Junction to case for D .C 2.5
GATE CHARACTERISTICS
P
= 1W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) V
G (AV)
= 5 V
RGM
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Type
TN805 TN815
TM
Ω
Ω
= 3 x I
T(AV)
Tj= 25°CMAX 5 15
Tj= 25°C MAX 1.5 V
Tj= 25°C TY P 2
I
GT
V
GT
V
GD
tgt V
VD = 12V (DC) RL= 33
VD = 12V (DC) RL= 33
VD = V
= V
D
RL = 3.3kΩ Tj= 125°CMIN 0.2 V
DRM
I
DRM
IG = 40mA dIG/dt = 0.5A/us
I
H
IT= 150mA Gate open Tj= 25°C MAX 25 30 mA
Value
°
C/W
Unit
µ
µ
A
s
I
L
V
TM
I
DRM
I
RRM
IG = 1.2 I
GT
ITM= 16A tp= 380µs
VDRM Rated
VRRM Rated Tj = 125°C MAX 2 mA
dV/dt Linear slope up to
=67%V
V
D
DRM
ORDERING INFORMATION
SCR
CURRENT
Tj= 25°C MAX 25 30 mA
Tj= 25°CMAX 1.6 V
Tj= 25°CMAX 10
Tj= 125°CMIN 50 150 V/
Gate open
TN 8 05 - 600 B
SENSITIVITY
PACKAG ES :
B: DPA K
/ V
V
DRM
RRM
µ
A
µ
s
2/5
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