Datasheet TN22 Datasheet (SGS Thomson Microelectronics)



FEATURES

:1200- 1500Vand100 0-1600V versions

V

BR

>175 mA

I

H

<1.5 mA

I

GT

DESCRIPTION

TN22

STARTLIGHT

SOT194

(Plastic)

The TN22 is an high performance asymetrical
SCR in high voltage PNPN diffused planar tech-

K

A

G

nology.
Packageeither in TO220AB,SOT 82or SOT194,

these parts are intended for use in electronic

TO220AB

(Plastic)

SOT82

(Plastic)

ABSOLUTERATINGS (limiting values)

Symbol Parameter Value Unit

V

DRM

I

T(RMS)

Repetitivepeak off-statevoltage Tj= 110°C 400 V
RMS on-state current

Tc=95°C2 A

Fullsine ware (180° conductionangle)

I

T(AV)

Mean on-state current

Tc=95°C 1.8 A

Fullsine ware (180° conductionangle)

I

TSM

Non repetitivesurge peak on-state current

initial= 25°C)

(T

j

tp = 8.3ms 22 A

tp =10ms 20

2

tI

I

dI/dt Criticalrateof riseof on-statecurrent

2

t Valuefor fusing tp =10ms 2 A2s

50 A/µs

I

=5mA dIG/dt = 70 mA/µs.

G

T

stg

T

j

Storageandoperating junction temperaturerange - 40to + 150

Tl Maximumlead temperaturefor soldering during 10sat

4.5mm from case

April 1995

°C

- 40to + 110
260 °C

1/7

TN22

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junctionto ambient TO220AB 60 °C/W

SOT 82 / SOT 194 100

Rth(j-c)

Junctionto case

3 °C/W

GATECHARACTERISTICS (maximum values)
P

= 300mW PGM=2W(tp=20µs) I

G(AV)

=1 A (tp= 20 µs) V

FGM

RGM

=6V

ELECTRICALCHARACTERISTICS

Symbol Test Conditions Type Value Unit

I

V

V

I

DRM

GT

GT

I

TM

H

VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω

=1KΩ

R

GK

VGK=0V Tj= 25°C MIN 175 mA
ITM= 2A tp= 380µs Tj= 25°C MAX 3.1 V
V

Rated Tj= 25°C MAX 0.1 mA

DRM

dV/dt Linear slopeup to

=67%V

V

D

DRMVGK

=0V

Tj= 25°C MAX 1.5 mA
Tj= 25°C MAX 3 V

Tj=110°C MIN 500 V/µs

Symbol

Test Conditions

V

BR

ID= 5mA VGK=0V
Tj = 25°C

ORDERINGINFORMATION

T N 2 2 - XXXX X

THYRISTOR
FAMILY

2/7

STARLIGHT Packages

I

T(RMS)

2:2A

MAX



IGTMAX
2 :1.5 mA

Suffix

Unit

TN22-1500 TN22-1600

MIN 1200 1000 V

MAX 1500 1600 V

VBRMAX
1500 : 1500V
1600 : 1600V

T : TO220AB
D :SOT 82
K : SOT 194

TN22

This thyristorhas beendesigned for use as a fluo­rescenttube starterswitch.

Auelectronicstarter circuitprovides:

BASIC APPLICATION DIAGRAM

INDUCTANCE

BALLAST

220 V

AV

VOLTAGE

FLUORESCENT

TUBE

A pre-heating period during which a heating
current is appliedto the cathodeheaters.

One or severalhigh voltagestriking pulses
across the lamp.

STARTER CIRCUIT

R

TN22

S

CONTROLER

(TIMER)

PRINCIPLEOFOPERATION

1/ Pre-heating
At resttheswitch S isopenedand when the mains

voltage is applied across the circuita full waverec­tified current flows through the resistor R and the
TN22 gate : At every half-cyclewhen this current
reachesthe gatetriggeringcurrent(I

) the thyris-

GT

tor turnson.
When the device is turned-on the heating current,

limited bythe ballastchoke,flowsthroughthetube
heaters.

The pre-heatingtime is typically2 or3 seconds.

2/ Pulsing
At theend of thepre-heatingphasethe switch S is

turned on.At thismoment:
If thecurrentthroughthe devicesishigherthan the
holding current (I
the currentfalls (below I

) the thyristor remains on until

H

). Thenthe thyristor turns

H

off.
If thecurrent is equalor lower than theholdingcur­rent thethyristorturns off the instantaneously.

When the thyristor turns off the current flowing
through the ballas choke generatesa high voltage

pulse. Thisovervoltage is clampedbythe thyristor
avalanchecharacteristic(V

BR

).

If thelampisnotstruckafterthefirst pulse,thesys­tem startsa newignitionsequenceagain.

3/ Steadystate
When the lamp is on the runningvoltage is about

150V and thestarterswitchis inthe off-state.

IMPLEMENTATION

The resistorR must be chosen toensure a proper
triggering in the worst case (minimum operating
temperature) according to the specified gate trig­gering currentand thepeakline voltage.

SwitchS : Thisfunctioncan be realizedwithagate
sensitiveSCRtype : P0130AA...
This component is a low voltage device (< 50V)
and the maximum current sink through this switch
can reach the levelof thethyristor holdingcurrent.

The pre-heating period can be determinedby the
time constant of a capacitor-resistor circuit
charged by the voltage drop of diodes usedin se­ries in thethyristorcathode.

3/7



TN22

Fig.1 : Maximum average power dissipation ver-

sus average on-state current (rectified full sine
wave).

P (W)

T(av)

6
5

4

=30

=60

o

3
2

=90

o

= 120

o

1
0

0.2 0 .4 0.6 0.8 1.2 1 .4 1.6 1.8 2

0

= 180

o

I (A)

T(av)

1

o

Fig.3 : Averageon-state currentversus case tem­perature(rectifiedfull sine wave).

I (A)

T(av)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0

o

= 180

o

Tcase ( C)

10 20 30 40 50 60

70

80 90 100 110

Fig.2 : Correlation between maximum average

power dissipation and maximum allowable tem­perature (Tamb and Tcase) for different thermal
resistancesheatsink+ contact.

P (W)

T(av)

6
5

o

Rth=12 C/W

o

Rth=8 C/W

o

Rth=4 C/W

o

Rth=0 C/W

4
3

2

= 180

o

1

o

0

0

10 20 30 40 50 60 70 80 90 100 110

Tcase ( C)

Fig.4 : Thermal transient impedance junction to

ambientversuspulseduration.

1.0E+02

1.0E+01

1.0E+00

Zth(j-a)(oC/W)

1.0E-01

1.0E-02 1.0E-01 1.0E+0 0 1.0E+01 1.0E +02 1.0E+03

tp(S)

Fig.5: Relativevariationof gatetriggercurrentand

holding current versusjunctiontemperature.

Igt[Tj]
Igt[Tj=25 C]

3.0

2.5

2.0

1.5

Ih

1.0

0.5

0.0

-40 -20 0 20 40 60 80 100 120 140

4/7

o

Igt

Ih[Tj]

o

Ih[Tj=25 C]

o

Tj( C)



Fig.6 : Non repetitive surge peak on-state current
versusnumber ofcycles.

I (A)

TSM

20
18
16
14
12
10

8
6
4
2

Number of cycles

0

1 10 100 1000

Tj initial = 25 C

F=50Hz

o

TN22

Fig.7 : Nonrepetitive surge peak on-statecurrent

for a sinusoidalpulse with width : tp ≤ 10ms, and
correspondingvalue ofI

I (A). I2t(A2s)

TSM

100

10

1

1

tp(ms)

2

t.

o

10

I

TSM

I2t

Tj initial = 25 C

Fig.9 : Relativevariation ofholdingcurrent versus
gate-cathoderesistance(typical values).

Fig.8: On-statecharacteristics(maximum values).

V (V)

TM

8
7
6
5
4
3
2
1
0

0.1

Tj=110 C
Vto =2.50V
Rt =0.2 35

o

o

Tj=110 C

o

Tj=25 C

I(A)

TM

110

20

Fig.10 : Maximum allowable RMS current versus

time conduction and initial case temperature
(Package: SOT82).
Note : Calculation made fot Tj max = 135°C (the
failuremode will be short circuit)

I(mA)

H

500

100

10

1

1 10 100 1000

Rgk( )

Tj=25 C

I (A)

T(rms)

o

11
10

9
8
7
6
5

Tc initial = 65 C

4
3
2
1

0.1

Tc initial = 25 C

o

o

Tc initial = 45 C

tp(s)

110100

o

5/7



TN22

PACKAGE MECHANICAL DATA

TO220AB(Plastic)

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 10.0 10.4 0.393 0.409
B 15.2 15.9 0.598 0.626
C 13 14 0.511 0.551
D 6.2 6.6••••• 0.244 0.260
E 16.4 typ. 0.645 typ.
F 3.5 4.2 0.137 0.165
G 2.65 2.95 0.104 0.116
H 4.4 4.6 0.173 0.181

I 3.75 3.85 0.147 0.151

J 1.23 1.32 0.048 0.051

K 1.27 typ. 0.050 typ.

L 0.49 0.70 0.019 0.027

M 2.4 2.72 0.094 0.107

N 4.95 5.15 0.194 0.203

N1 2.40 2.70 0.094 0.106

O 1.14 1.70 0.044 0.067
P 0.61 0.88 0.024 0.034

Cooling method : C
Marking : Type number
Weight : 2 g

PACKAGEMECHANICAL DATA

SOT 82 (Plastic)

CA

H

D

M

E

F

Recommended torque values : 5.5 m.N.
Maximum torque values : 0.70 m.N.

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

B

L

G

A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.425
C 2.4 2.7 0.094 0.106
D 0.7 0.9 0.027 0.035
E 2.2 typ. 0.087 typ.
F 0.49 0.75 0.019 0.029

G 4.15 4.65 0.163 0.183

H (1) 2.54 0.100

L 15.7 typ. 0.618 typ.

M 1.0 1.3 0.039 0.051

(1) Within this region the cross-section of the leads is

uncontrolled

Marking : Type number
Weight : 0.72 g

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

PACKAGE MECHANICALDATA

SOT194 (Plastic)

CA

L

M

D

F

N

E

I

TN22

DIMENSIONS

REF.

A 7.4 7.8 0.291 0.307

B

O

G

B 10.5 10.8 0.413 0.425
C 2.4 2.7 0.094 0.106
D 0.7 0.9 0.027 0.035
E 2.2 typ. 0.087 typ.
F 0.49 0.75 0.019 0.020
G 4.15 4.65 0.163 0.183

I 1.3 typ. 0.051 typ.

L 0.1 typ. 0.004 typ.

M 4typ 0.158 typ

N 2 typ. 0.078 typ.
O 6 typ. 0.236 typ.
α 45° 45°

Millimeters Inches

Min. Max. Min. Max.

Marking : Type number
Weight : 0.68 g

Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences ofuse of such informationnor for any infringement of patentsor other rights ofthird parties which may result from its use. No
license isgranted by implication or otherwise under any patent or patent rightsof SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare not authorized for use as critical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.

FOOTPRINT

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6.7

8.5

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1

 1995 SGS-THOMSON Microelectronics- Printedin Italy- All rights reserved.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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