SGS Thomson Microelectronics TIP49, TIP50, TIP48, TIP47 Datasheet

TIP47/TIP48
®
SILICON NPN SWITCHING TRANSISTORS
STMicroelectronics PREFERRE D SALEST YPES
NPN TRANSISTOR
DESCRIPTION
TIP49/TIP50
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TIP47 TIP48 TIP49 TIP50
V V V
I
P
T
October 1999
Collector-Base Voltage (IE = 0) 350 400 450 500 V
CBO
Collector-Emitter Voltage (IB = 0) 250 300 350 400 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 1 A
I
C
Collector Peak Current 2 A
CM
Base Current 0.6 A
I
B
Total Dissipation at T
tot
T Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
case amb
25 oC
25 oC
40
2
W W
o
C
o
C
1/4
TIP47 / TIP48 / TIP49 / TIP50
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max
3.125
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off Current (V
BE
= 0)
Collector Cut-off Current (I
= 0)
B
Emitter Cut-off Current (I
= 0)
C
* Collector-Emitter
Sustaining Voltage (I
= 0)
B
* Collector-Emitter
TIP47
for
TIP48
for
TIP49
for
TIP50
for
TIP47
for
TIP48
for
TIP49
for
TIP50
for
= 5 V 1 mA
V
EB
I
= 30 mA
C
TIP47
for
TIP48
for
TIP49
for
TIP50
for
V V
V V
V
V
V
V
= 350 V
CE
= 400 V
CE
= 450 V
CE
= 500 V
CE
= 150 V
CE
= 200 V
CE
= 250 V
CE
= 300 V
CE
250 300 350 400
IC = 1 A IB = 0.2 A 1 V
1 1 1 1
1 1 1 1
Saturation Voltage
V
* Base-Emitter Voltage IC = 1 A VCE = 10 V 1.5 V
BE(on)
h
* DC Current Gain IC = 0.3 A VCE = 10 V
FE
f
Transition Frequency VCE = 10 V IC = 0.2 A
T
I
= 1 A VCE = 10 V
C
30
150
10 10 MHz
f = 2 MHz
h
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Small Signal Current
fe
Gain
VCE = 10 V IC = 0.2 A f = 1 KHz
25
mA mA mA mA
mA mA mA mA
V V V V
2/4
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