SGS Thomson Microelectronics TIP36B, TIP36C, TIP35C Datasheet
TIP35C
®
COMPLEMENTARY SILICON HIGH POWER
■
STMicroelectronic PREFERRED
SALESTYPES
DESCRIPTION
The TIP35C is a silicon Epitaxial-Base NPN
transistor mounted in TO-218 plastic package. It
is intented for use in power amplifier and
switching applications.
The complementary PNP type is TIP36C.
Also TIP36B is a PNP type.
TIP36B/TIP36C
TRANSISTORS
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP35C
PNP TIP36B TIP36C
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 80 100 V
CBO
Collector-Emitter Voltage (IB = 0) 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 25 A
I
C
Collector Peak Current 50 A
CM
Base Current 5 A
I
B
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
case
≤ 25 oC
125 W
o
C
o
C
October 1999
1/4
TIP35C / TIP36B / TIP36C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
EBO
I
CES
V
CEO(sus)
h
V
CE(sat)
V
BE(on)
h
FE
f
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
Collector Cut-off
Current (V
BE
= 0)
* Collector-Emitter
Sustaining Voltage
(I
= 0)
B
* DC Current Gain IC = 1.5 A VCE = 4 V
* Collector-Emitter
Saturation Voltage
= 60 V 1 mA
V
CE
= 5 V 1 mA
V
EB
= Rated V
V
CE
I
= 30 mA
C
TIP36B
for
TIP35C/36C
for
CEO
80
100
25
I
= 15 A VCE = 4 V
C
10
IC = 15 A IB = 1.5 A
I
= 25 A IB = 5 A
C
* Base-Emitter Voltage IC = 15 A VCE = 4 V
I
= 25 A VCE = 4 V
C
Transition Frequency IC = 1 A VCE = 10 V f = 1 MHz 3 MHz
T
Small Signal Current
fe
IC = 1 A VCE = 10 V f = 1 KHz 25
0.7 mA
50
1.8
4
2
4
Gain
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
V
V
V
V
V
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