SGS Thomson Microelectronics TIP33C, TIP34C Datasheet
TIP33C
®
TIP34C
COMPLEME NTARY SILICON POWER T RANSISTOR S
■
STMicroelectronics PREFERRED
SALESTYPES
■
COMP LEMENTARY PNP - NPN D E VI C E S
APPLICATIONS
■
GENERAL PURPOSE SWITCHING
DESCRIPTION
The TIP33C is a silicon Epitaxial-Base NPN
power transistor mounted in TO-218 plastic
package. It is intented for use in linear and
switching applications.
The complementary PNP type is TIP34C.
TO-218
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP33C
PNP TIP34C
V
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 140 V
CBO
Collector-Emitter Voltage (VBE = 0) 140 V
CES
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 10 A
C
Collector Peak Current 12 A
CM
I
Base Current 3 A
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
80 W
o
C
o
C
October 1999
1/4
TIP33C / TIP34C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.56
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 140 V 400 µA
V
CE
= 60 V 0.7 mA
V
CE
= 5 V 1 mA
V
EB
I
= 30 mA 100 V
C
Sustaining Voltage
(I
= 0)
B
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage I
BE(on)
h
∗ DC Current Gain I
FE
h
Small Signal Current
fe
Gain
f
Transition frequency IC = 0.5 A VCE = 10 V
T
= 3 A IB = 0.3 A
I
C
I
= 10 A IB = 2.5 A
C
= 3 A VCE = 4 V
C
I
= 10 A VCE = 4 V
C
= 1 A VCE = 4 V
C
I
= 3 A VCE = 4 V
C
IC = 0.5 A VCE = 10 V
f = 1 KHz
1
4
1.6
3
40
20 100
20
3 MHz
f = 1 MHz
RESISTIVE LOAD
on
s
t
f
Turn-on Time
Storage Time
Fall Time
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCC = 30V I
V
= - 6 V IB1 = - IB2 = 0.6 A
BB
= 20 µs
t
p
= 6 A
C
0.6
0.4
1
V
V
V
V
µs
µs
µs
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