SGS Thomson Microelectronics TIP33C, TIP34C Datasheet

TIP33C
®
TIP34C
COMPLEME NTARY SILICON POWER T RANSISTOR S
STMicroelectronics PREFERRED SALESTYPES
COMP LEMENTARY PNP - NPN D E VI C E S
APPLICATIONS
GENERAL PURPOSE SWITCHING
DESCRIPTION
The TIP33C is a silicon Epitaxial-Base NPN power transistor mounted in TO-218 plastic package. It is intented for use in linear and switching applications.
The complementary PNP type is TIP34C.
TO-218
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP33C PNP TIP34C
V V V V
I
P T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 140 V
CBO
Collector-Emitter Voltage (VBE = 0) 140 V
CES
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 10 A
C
Collector Peak Current 12 A
CM
I
Base Current 3 A
B
Total Dissipation at Tc 25 oC
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
80 W
o
C
o
C
October 1999
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TIP33C / TIP34C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.56
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off Current (V
BE
= 0)
Collector Cut-off Current (I
= 0)
B
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter
= 140 V 400 µA
V
CE
= 60 V 0.7 mA
V
CE
= 5 V 1 mA
V
EB
I
= 30 mA 100 V
C
Sustaining Voltage (I
= 0)
B
V
Collector-Emitter
CE(sat)
Saturation Voltage
V
Base-Emitter Voltage I
BE(on)
h
DC Current Gain I
FE
h
Small Signal Current
fe
Gain
f
Transition frequency IC = 0.5 A VCE = 10 V
T
= 3 A IB = 0.3 A
I
C
I
= 10 A IB = 2.5 A
C
= 3 A VCE = 4 V
C
I
= 10 A VCE = 4 V
C
= 1 A VCE = 4 V
C
I
= 3 A VCE = 4 V
C
IC = 0.5 A VCE = 10 V f = 1 KHz
1 4
1.6 3
40 20 100
20
3 MHz
f = 1 MHz
RESISTIVE LOAD
on
s
t
f
Turn-on Time Storage Time Fall Time
t
t
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCC = 30V I V
= - 6 V IB1 = - IB2 = 0.6 A
BB
= 20 µs
t
p
= 6 A
C
0.6
0.4 1
V V
V V
µs µs µs
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TO-218 (SOT-93) MECHANICAL DATA
TIP33C / TIP34C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598 L2 16.2 – 0.637 L3 18 0.708 L5 3.95 4.15 0.155 0.163 L6 31 1.220
R 12.2 0.480
Ø 4 4.1 0.157 0.161
mm inch
H
A
C
L5
E
D
L6
L3
L2
G
¯
F
R
1
2 3
P025A
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TIP33C / TIP34C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectro nics – Printed in Italy – All Rights Reserved
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