TIP31A/31C
COMPLEMENTARY SILICON POWER
APPLICATION
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP31A and TIP31C are silicon
Epitaxial-Base NPN transistors mounted in
Jedec TO-220 plastic package. They are intented
for use in medium power linear and switching
applications.
The complementary PNP types are TIP32A and
TIP32Crespectively.
AlsoTIP32B is a PNPtype.
TIP32A/32B/32C
TRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP 31A TIP31C
PNP TIP32A TIP32B TIP32C
V
V
V
I
P
T
For PNP types voltage and current values are negative
Collec t or -Base Volt age ( IE= 0) 60 80 100 V
CBO
Collec t or -Emitt er Vol ta ge ( IB= 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 3 A
I
C
Collector Peak Current 5 A
CM
Base Cu rrent 1 A
I
B
Tot al Dissipation at T
tot
St orage Temperature -65 t o 150
stg
Max. O perating J unc t ion Tem perature 150
T
j
T
case
amb
≤ 25oC
o
25
≤
C
40
2
W
W
o
C
o
C
October 1999
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TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
3.12
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unlessotherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CES
I
EBO
V
CEO(sus )
V
CE(sat)
Collect o r Cut- off
Current (I
B
=0)
Collect o r Cut- off
Current (V
BE
=0)
Emitter Cut-off Current
=0)
(I
C
∗ Collector-Emitter
Sust aining Voltage
=0)
(I
B
Collector-Emitter
∗
for TIP3 1A/32A V
for TIP3 1C/32B/3 2C V
for TIP3 1A/32A V
for TIP/32B V
TI P3 1C/32C
for
V
=5V 1 mA
EB
I
=30mA
C
for TIP31A/32A
for TIP32B
for TIP31C/32C
I
=3A IB=375mA 1.2 V
C
CE
CE
CE
CE
V
CE
=30V
=60V
=60V
=80V
=100V
60
80
100
0.3
0.3
0.2
0.2
0.2
Sat urat ion Voltage
∗ Bas e-E mi t t er Volt age IC=3A VCE=4V 1.8 V
V
BE(on)
h
∗ DC Cu r rent Gain IC=1A VCE=4V
FE
h
Small Si gnall C urrent
fe
Gain
∗
Pulsed : pulse duration= 300 µs, duty cycle ≤ 2%
For PNP types voltage and current values are negative.
=3A VCE=4V
I
C
IC=0.5A VCE=10V f=1KHz
I
=0.5A VCE=10V f=1MHz
C
25
10 50
20
3
mA
mA
mA
mA
mA
V
V
V
SafeOperating Area DeratingCurves
2/5
TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
DC Current Gain (NPN type)
Collector-Emitter SaturationVoltage (NPN type)
DC Current Gain (PNP type)
Collector-Emitter SaturationVoltage (PNPtype)
Base-EmitterSaturation Voltage (NPN type)
Collector-Base Capacitance (PNP type)
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TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
4/5
P011C
TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
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