TIP31A/31C
COMPLEMENTARY SILICON POWER
APPLICATION
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP31A and TIP31C are silicon
Epitaxial-Base NPN transistors mounted in
Jedec TO-220 plastic package. They are intented
for use in medium power linear and switching
applications.
The complementary PNP types are TIP32A and
TIP32Crespectively.
AlsoTIP32B is a PNPtype.
TIP32A/32B/32C
TRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP 31A TIP31C
PNP TIP32A TIP32B TIP32C
V
V
V
I
P
T
For PNP types voltage and current values are negative
Collec t or -Base Volt age ( IE= 0) 60 80 100 V
CBO
Collec t or -Emitt er Vol ta ge ( IB= 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 3 A
I
C
Collector Peak Current 5 A
CM
Base Cu rrent 1 A
I
B
Tot al Dissipation at T
tot
St orage Temperature -65 t o 150
stg
Max. O perating J unc t ion Tem perature 150
T
j
T
case
amb
≤ 25oC
o
25
≤
C
40
2
W
W
o
C
o
C
October 1999
1/5
TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
3.12
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unlessotherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CES
I
EBO
V
CEO(sus )
V
CE(sat)
Collect o r Cut- off
Current (I
B
=0)
Collect o r Cut- off
Current (V
BE
=0)
Emitter Cut-off Current
=0)
(I
C
∗ Collector-Emitter
Sust aining Voltage
=0)
(I
B
Collector-Emitter
∗
for TIP3 1A/32A V
for TIP3 1C/32B/3 2C V
for TIP3 1A/32A V
for TIP/32B V
TI P3 1C/32C
for
V
=5V 1 mA
EB
I
=30mA
C
for TIP31A/32A
for TIP32B
for TIP31C/32C
I
=3A IB=375mA 1.2 V
C
CE
CE
CE
CE
V
CE
=30V
=60V
=60V
=80V
=100V
60
80
100
0.3
0.3
0.2
0.2
0.2
Sat urat ion Voltage
∗ Bas e-E mi t t er Volt age IC=3A VCE=4V 1.8 V
V
BE(on)
h
∗ DC Cu r rent Gain IC=1A VCE=4V
FE
h
Small Si gnall C urrent
fe
Gain
∗
Pulsed : pulse duration= 300 µs, duty cycle ≤ 2%
For PNP types voltage and current values are negative.
=3A VCE=4V
I
C
IC=0.5A VCE=10V f=1KHz
I
=0.5A VCE=10V f=1MHz
C
25
10 50
20
3
mA
mA
mA
mA
mA
V
V
V
SafeOperating Area DeratingCurves
2/5