TV VERTICALDEFLECTION BOOSTER
.
POWERAMPLIFIER
.
FLYBACKGENERATOR
.
THERMAL PROTECTION
.
REFERENCEVOLTAGE
DESCRIPTION
Designedfor monitors and high performanceTVs,
the TDA8178Svertical deflection booster delivers
flyback voltagesup to 90V.
The TDA8178Soperates with supplies up to 42V
and provides up to2App output current to drive to
yoke.
TheTDA8178Sis offeredin HEPTAWATTpackage
TDA8178S
HEPTAWATT
(Plastic Package)
ORDER CODE : TDA8178S
PIN CONNECTIONS
Tab connectedto pin 4
May 1993
7
6
5
4
3
2
1
ReferenceVoltage
Output Stage Supply
Output
GND
Flyback Generator
SupplyVoltage
InvertingInput
8178S-01.EPS
1/6
TDA8178S
BLOCK DIAGRAM
26 3
FLYBACK
GENERATOR
+V
S
1
7
REFERENCE
VOLTAGE
APPLICATION CIRCUIT (VS= 42V)
+V
S
POWER
AMPLIFIER
THERMAL
PROTECTION
4
26 3
5
YOKE
8178S-02.EPS
1
7
TDA8178S
4
5
Note : For values see ”EasyDesignof Vertical Deflection Stages” (software available from our sales offices)
2/6
YOKE
8178S-03.EPS
TDA8178S
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
V
5,V6
V
1,V7
I
I
P
T
T
THERMALDATA
Symbol Parameter Value Unit
R
th (j-c)
ELECTRICALCHARACTERISTICS
= 42V, TA=25oC, unless otherwise specified) (refer to thetest circuits - seeFigure 1next page)
(V
S
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
I
I
I
V
V
V
V
V
D5 - 6
V
D3 - 2
V
∆V
7
K
R
T
Supply Voltage (pin 2) 50 V
S
Flyback PeakVoltage 100 V
Amplifier Input Voltage + V
Output Peak Current
O
Non-repetitive, t = 2ms
f = 50 or 60Hz, t ≤ 10µs
f = 50 or 60Hz, t> 10µs
Pin 3 DC at V5<V
3
Pin 3 Peak Flyback Current at f =50 or 60Hz, t
TotalPower Dissipation at TC=70oC20W
tot
Storage Temperature - 40, + 150
stg
Junction Temperature 0, +150
j
2
≤ 1.5ms
fly
S
2
2
1.8
100
1.8
Junction-case Thermal Resistance Max. 3
Operating Supply VoltageRange 10 42 V
S
Pin 2 Quiescent Current I3=0 I5= 0 10 20 mA
2
Pin 6 Quiescent Current I3=0 I5= 0 20 40 mA
6
Amplifier Bias Current V1= 1V - 0.2 - 1 µA
1
Pin 3 Saturation toGND I3= 20mA 1.3 1.8 V
3L
Quiescent Output Voltage
5
Output Saturation Voltage to GND I5= 1A 1.2 1.5 V
5L
Output Saturation Voltage to Supply - I5= 1A 2.2 2.6 V
5H
= 42V Ra= 3.9kΩ
V
S
= 35V Ra= 5.6kΩ
V
S
23.41724.2
17.82518.5
Diode Forward Voltage between Pins5-6 ID= 1A 1.5 3 V
Diode Forward Voltage between Pins3-2 ID= 1A 1.5 3 V
Internal Reference 2.1 2.2 2.3 V
7
/∆VSReference Voltage Drift versus V
Reference Voltage Drift versus T
T
Input Resistance 200 kΩ
1
Junction Temperature for Thermal
j
Shutdown
S
j
VS= 24 to 42V 2 4 mV/V
Tj= 0 to 125oC
∆V
⋅ 10
7
=
K
T
∆Tj⋅ V
7
6
100 150 ppm/oC
140
mA
o
o
o
C/W
o
A
A
C
C
8178S-01.TBL
8178S-02.TBL
V
C
8178S-03.TBL
3/6
TDA8178S
FIGURE1 :DC TestCircuits
Figure1a : Measurement of I1,I2,I6,V7,∆V7/∆V
+V
S
I
2
26
TDA8178S
74
V
7
S1 : (a) I2and I6, (b) I
Figure1c : Measurement of V3L,V
I
6
5
10kΩ
a
S1
1
1
b
I
1
1V
5L
Figure1b : Measurementof V
S
26
TDA8178S
1V
8178S-04.EPS
Figure1d : Measurementof V
5H
V
51
4
5
+V
S
5H
-I
5
8178S-05.EPS
26
1
3V
S1 : (a)V3L, (b) V
TDA8178S
5L
S1
a
3
5
4
V
3L
IorI
b
+V
53
V
S
5L
8178S-06.EPS
+V
S
26
TDA8178S
39kΩ
Re
51
4
V
5
8178S-07.EPS
4/6
Figure2 : SOAof EachOutput Power Transistorat TA=25oC
I (A)
10
C
TDA8178S
10
10
2
1.2
1
I max.pulsed
C
I max.continued
C
-1
* For single non repetitive pulse
-2
Pulse Operation*
1ms
10ms
DC
Operation
V (V)
CE
10110
2
8178S-08.EPS
5/6
TDA8178S
PACKAGE MECHANICALDATA : HEPTAWATT
L
L1
A
C
H3
Dia.
L7
D1
L6
D
L2
L3L5
F1
E
MM1
G
G1
G2
F
H2
Dimensions Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.6 08 0.024 0.031
F1 0.9 0.035
G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 16.97 0.668
L1 14.92 0.587
L2 21.54 0.848
L3 22.62 0.891
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 2.8 0.110
M1 5.08 0.200
Dia. 3.65 3.85 0.144 0.152
Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patentsor other rights of third parties which may result
from its use. No licence is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
PM-HEPTV.EPS
HEPTV.TBL
6/6
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components of SGS-THOMSON Microelectronics,conveys a license under the Philips
2
I
C Patent. Rights to use these components in a I2C system,is granted provided that the system conforms to
2
the I
C Standard Specifications as defined by Philips.
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