VERTICAL DEFLECTION BOOSTER
.
POWER AMPLIFIER
.
FLYBACK GENERATOR
.
THERMAL PROTECTION
.
OUTPUT CURRENT UP T O 3. 0A
.
FLYBACK VOLTAGE UP TO 70V (on Pin 5)
.
SUITABLE FOR DC COUPLING APPLICATION
DESCRIPTION
Designed for monitors and high performance TVs,
the TDA8177 vertical deflection booster delivers
flyback voltages up to 70V.
The TDA 8177 oper ates wit h supplies up to 35V and
provides up to 3A
The TDA8177 is offered in HEPT A WATT package.
PIN CONNECTIONS
output curren t to drive the y oke.
PP
PP
HEPTAWATT
(Plastic Package)
ORDER CODE :
TDA8177
TDA8177
BLOCK DIAGRAM
Tab connected to Pin 4
INVERTING INPUT
NON-INVERTING INPUT
SUPPLY
VOLTAGE
2 36
1
7
TDA8177
7
6
5
4
3
2
1
OUTPUT
STAGE
SUPPLY
POWER
AMPLIFIER
4
GROUND
FLYBACK
GENERATOR
FLYBACK
GENERATOR
THERMAL
PROTECTION
NON-INVERTING INPUT
OUTPUT STAGE SUPPLY
OUTPUT
GROUND
FLYBACK GENERATOR
SUPPLY VOLTAGE
INVERTING INPUT
OUTPUT
5
8177-01.EPS
8177-02.EPS
December 1998
1/5
TDA8177
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
, V7Amplifier Input Voltage (Pins 1-7) (see note 1) - 0.3, + V
V
1
I
V
ESD
T
oper
T
T
Notes :
THERMAL DATA
Symbol Parameter Value Unit
R
th (j-c)
T
T
Supply Voltage (Pin 2) (see note 1) 40 V
S
Flyback Peak Voltage (Pin 6) (see note 1) 75 V
6
Maximum Output Peak Current (see notes 2 and 3) 2.5 A
O
Maximum Sink Current (first part of flyback) (t < 1ms) 2.5 A
I
3
Maximum Source Current (t < 1ms) 2.5 A
I
3
Electrostatic Handling for all pins (see note 4) 2000 V
Operating Ambient Temperature - 20, + 75
Storage Temperature - 40, + 150
stg
Junction Temperature +150
j
1. Versus Pin 4.
2. The output current can reach 4A peak for t ≤ 10µs (up to 120Hz).
3. Provided SOAR is respected (see Figures 1 and 2).
4. Equivalent to discharging a 100pF capacitor through a 1.5kΩ series resistor.
Junction-case Thermal Resistance Max. 3
Temperature for Thermal Shutdown 150
t
Recommended Max. Junction Temperature 120
jr
S
o
C/W
V
o
C
o
C
o
C
o
C
o
C
8177-01.TBL
8177-02.TBL
ELECTRICAL CHARACTERISTICS
(V
= 35V, TA = 25oC, unless otherwise specified)
S
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
∆
V
GV Voltage Gain 80 dB
V
V
V
D5 - 6
V
D3 - 2
V
V
Operating Supply Voltage Range 10 35 V
S
Pin 2 Quiescent Current I3 = 0, I5 = 0 9 20 mA
I
2
Pin 6 Quiescent Current I3 = 0, I5 = 0, V6 = 35V 8 15 30 mA
I
6
Max. Peak Output Current 1.5 A
I
O
Amplifier Bias Current V1 = 22V, V7 = 23V - 0.15 - 1
I
1
Amplifier Bias Current V1 = 23V, V7 = 22V - 0.15 - 1
I
7
Offset Voltage 7mV
IO
/dt Offset Drift versus Temperature - 10
IO
Output Saturation Voltage to GND (Pin 4) I5 = 1.5A 1 1.7 V
5L
Output Saturation Voltage to Supply (Pin 6) I5 = - 1.5A 1.8 2.3 V
5H
Diode Forward Voltage between Pins 5-6 I5 = 1.5A 1.8 2.3 V
Diode Forward Voltage between Pins 3-2 I3 = 1.5A 1.6 2.2 V
Saturation Voltage on Pin 3 I3 = 20mA 0.4 1 V
3SL
Saturation Voltage to Pin 2 (2nd part of flyback) I3 = - 1.5A 2.1 2.8 V
3SH
µ
µ
A
µ
A
V/oC
8177-03.TBL
2/5
APPLICATION CIRCUITS
AC COUPLING
TDA8177
+ V
S
C
F
DC COUPLING
V
REF
2.2V
R5
1
7
TDA8177
6
2
POWER
AMPLIFIER
4
3
FLYBACK
GENERATOR
THERMAL
PROTECTION
R3
R2
+ V
C
F
5
W
W
1.5
330
F
m
YOKE
0.47
R4
C
L
R1
8177-03.EPS
S
V
V
REF
REF
+
Vertical
Position
Adjustment
-
R5
1
7
TDA8177
-V
6
2
POWER
AMPLIFIER
4
EE
3
FLYBACK
GENERATOR
THERMAL
PROTECTION
5
W
W
1.5
330
F
m
YOKE
0.47
R2
R1
8177-04.EPS
3/5
TDA8177
Figure 1 :
Output Transistors SOA
Figure 2 :
(for secondary breakdown)
IC (A)
10
@ T
= 25°C
case
1
-1
10
t = 1ms
t = 10ms
10
t = 100ms
-2
V
(V)
CE
11010
100
90
80
70
60
2
8177-05.EPS
Secondary Breakdown Temperature
Derating Curve
(ISB = secondary breakdown current)
ISB (%)
T
(°C)
case
25 50 75 100 125
8177-06.EPS
4/5
TDA8177
PACKAGE MECHANICAL DATA :
Dimensions
Min. Typ. Max. Min. Typ. Max.
HEPTAW ATT
Millimeters Inches
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.6 08 0.024 0.031
F1 0.9 0.035
G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 16.97 0.668
L1 14.92 0.587
L2 21.54 0.848
L3 22.62 0.891
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 2.8 0.110
M1 5.08 0.200
Dia. 3.65 3.85 0.144 0.152
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or sys tem s
without express written approv al of STMi cr oelec troni cs.
Purchase of I
Rights to use these components in a I
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The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics - All Rights Reserved
2
C Components of STMicroelectronics, conveys a license under the Philips I2C Pate n t .
2
the I
C Standard Specifications as defined by Phili ps.
STMicroelectronics GROUP OF COMPANIES
2
C system, is granted provided that the system conforms to
http://www.st.com
5/5
PM-HEPTV.EPS
HEPTV.TBL
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