Datasheet TDA8172 Datasheet (SGS Thomson Microelectronics)

TV VERTICALDEFLECTION OUTPUT CIRCUIT
.
POWERAMPLIFIER
.
FLYBACKGENERATOR
.
THERMAL PROTECTION
DESCRIPTION
The TDA8172 is a monolithic integrated circuit in HEPTAWATT power booster fordirectdriving of verticalwindings of TVyokes. It is intendedfor usein Color andB & W televisionas wellas in monitorsand displays.
PIN CONNECTIONS(top view)
TM
package. It is a high efficiency
TDA8172
HEPTAWATT
(Plastic Package)
ORDER CODE : TDA8172
BLOCK DIAGRAM
Tab connectedto Pin 4
236
1
7
TDA8172
POWER
4
7 6 5 4 3 2 1
FLYBACK
GENERATOR
THERMAL
PROTECTION
+V
NON-INVERTING INPUT OUTPUT STAGE SUPPLY OUTPUT GROUND FLYBACK GENERATOR SUPPLY VOLTAGE INVERTING INPUT
8172-01.EPS
S
5
YOKE
May 1996
8172-02.EPS
1/5
TDA8172
ABSOLUTEMAXIMUM RATINGS
Symbol Parameter Value Unit
V
S
V
5,V6
V
3
V1,V7Amplifier InputVoltage + V
I
o
I
o
I
o
I
3
I
3
P
tot
T
stg,Tj
THERMALDATA
Symbol Parameter Value Unit
R
th (j–c)
Supply Voltage (pin 2) 35 V Flyback Peak Voltage 60 V Voltage at Pin 3 + V
– 0.5
s s
Output Peak Current (non repetitive, t = 2 ms) 2.5 A Output Peak Current at f = 50 or 60 Hz, t 10 µs3A Output Peak Current at f = 50 or 60 Hz, t >10 µs2A Pin 3 DC Current at V5<V
2
Pin 3 Peak to Peak Flyback Current at f = 50 or 60 Hz, t Total Power Dissipation at T
=90°C20W
case
1.5 ms 3 A
fly
100 mA
Storage and Junction Temperature – 40, +150 °C
Thermal Resistance Junction-case Max. 3 °C/W
V
8172-01.TBL
8172-02.TBL
ELECTRICAL CHARACTERISTICS
(refer to the testcircuits, V
=35V, T
S
Symbol Parameter Test Conditions Min. Typ. Max. Unit Fig.
Pin 2 Quiescent Current I3=0,I5=0 8 16 mA 1a
I
2
Pin 6 Quiescent Current I3=0,I5= 0 16 36 mA 1a
I
6
Amplifier Input Bias Current V1= 1 V, V7= 2 V – 0.1 – 1 µA1a
I
1
V
V
V
V
Pin 3 Saturation Voltage to GND I3= 20 mA 1 1.5 V 1c
3L
Quiescent Output Voltage Vs= 35V, Ra=39k 18 V 1d
5
Output Saturation Voltage to GND I5= 1.2 A 1 1.4 V 1c
5L
Output Saturation Voltage to Supply – I5= 1.2A 1.6 2.2 V 1b
5H
Junction Temperature for Thermal Shut Down 140 °C
T
j
=25oC unlessotherwisespecified)
amb
= 2 V, V7= 1 V – 0.1 – 1 µA1a
V
1
= 0.7 A 0.7 1 V 1c
I
5
= 0.7A 1.3 1.8 V 1b
–I
5
8172-03.TBL
2/5
Figure 1 : DC TestCircuits.
TDA8172
Figure 1 a : Measurementof I1;I2;I
2
7
S1:(a) I2and I6; (b) I
I
2
V
7
1
I
6
6
5
S1
1
4
Figure 1 c : Measurementof V3L;V
3V
2
1
7
V
7
6
3
5
4
V
3L
5L
6
V
10k
a b
b
S
I
1V
S1
1
or
I
3I5
a
Figure1 b : Measurementof V
2
1
5H
V
S
6
V
5H
5
1V
7
V
7
8172-03.EPS
Figure1 d : Measurementof V
V
S
2
12k
2V
V
5L
1
5.6k
7
V
7
4
I
5
8172-04.EPS
5
V
6
5
4
R
a
S
V
5
S1:(a) V3L;(b) V
5L
8172-05.EPS
8172-06.EPS
3/5
TDA8172
Figure 2 : AC Test Circuit
V
GND
to
i
RT1
R1
10k
4.7k
IN
*
V
S
REF
R2
5.6k
7
1
V
Re comme nde d for V filtering
C1 C2
F
µ
R3 R4
12k
REF
TDA8172
4
1N4001
D1
C6
F
4.7
µ
C3
220µF470µF0.1
632
Iy
5
8.2k
C4
0.22µF
R7
1.5
2200µF
8.2
C5
R5
R6
330
Ly
24.6mH
to
Ry
9.6
t
fly
V
7
to
R5 Iy
8172-07.EPS
MOUNTINGINSTRUCTIONS
The power dissipated in the circuit must be re­moved by adding an externalheatsink. Thanks to the HEPTAWATT
TM
package attaching the heatsinkis verysimple, a screw or a compres­sion spring(clip)being sufficient.
Figure 3 : Mounting Examples
Between the heatsink and the packageit is better to insert a layer of silicon grease, to optimize the thermal contact ; no electrical isolation is needed between the two surfaces, since the tab is con­nectedto Pin 4 whichis ground.
4/5
8172-08.EPS - 8172-09.EPS
PACKAGE MECHANICAL DATA : 9 PINS - PLASTIC HEPTAWATT
Dimensions
Min. Typ. Max. Min. Typ. Max.
A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022 F 0.6 08 0.024 0.031
F1 0.9 0.035
G 2.41 2.54 2.67 0.095 0.100 0.105 G1 4.91 5.08 5.21 0.193 0.200 0.205 G2 7.49 7.62 7.8 0.295 0.300 0.307 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409
L 16.97 0.668 L1 14.92 0.587 L2 21.54 0.848 L3 22.62 0.891 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260
M 2.8 0.110
M1 5.08 0.200
Dia. 3.65 3.85 0.144 0.152
Millimeters Inches
TDA8172
PM-HEPTV.EPS
HEPTV.TBL
Information furnishedis believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or otherrights of third partieswhich may result from its use. Nolicence is granted by implication or otherwise underany patent or patent rights ofSGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSONMicroelectronics products arenot authorized for use as critical components inlife support devices or systems without express written approvalof SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components of SGS-THOMSON Microelectronics,conveys a license under the Philips
2
I
C Patent. Rights to use these components in a I2C system,is granted provided that the systemconforms to
Australia - Brazil -Canada - China -France - Germany - HongKong - Italy -Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom -U.S.A.
2
the I
C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5
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