SGS Thomson Microelectronics TDA7560 Datasheet

TDA7560
4 x 45WQUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD
PRODUCT PREVIEW
SUPERIOROUTPUTPOWER CAPABILITY: 4 x50W/4MAX. 4 x45W/4ΩEIAJ 4 x30W/4Ω@ 14.4V,1KHz, 10% 4 x80W/2MAX. 4 x77W/2EIAJ 4 x55W/2@ 14.4V,1KHz, 10%
EXCELLENT2ΩDRIVINGCAPABILITY HI-FICLASS DISTORTION LOW OUTPUT NOISE ST-BYFUNCTION MUTEFUNCTION AUTOMUTEAT MIN. SUPPLYVOLTAGE DE-
TECTION LOW EXTERNAL COMPONENTCOUNT:
– INTERNALLYFIXED GAIN(26dB) – NOEXTERNALCOMPENSATION – NOBOOTSTRAPCAPACITORS
ON BOARD0.35A HIGHSIDE DRIVER
PROTECTIONS:
OUTPUT SHORT CIRCUIT TO GND, TO V ACROSS THELOAD
VERYINDUCTIVE LOADS OVERRATING CHIP TEMPERATURE WITH
SOFT THERMAL LIMITER LOADDUMP VOLTAGE
MULTIPOWER BCD TECHNOLOGY
MOSFETOUTPUT POWER STAGE
FLEXIWATT25
ORDERING NUMBER: TDA7560
FORTUITOUSOPEN GND REVERSEDBATTERY ESD
DESCRIPTION
The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio
,
S
The fullycomplementaryP-Channel/N-Channel output structure allowsa rail to rail outputvoltage swingwhich, combined with high output current and minimised saturation losses sets new power referencesin the car-radiofield, with unparal­leleddistortion performances.
BLOCK AND APPLICATION DIAGRAM
Vcc1 Vcc2
ST-BY
MUTE
IN1
0.1µF
IN2
0.1µF
IN3
0.1µF
IN4
0.1µF
AC-GND
0.47µF47µF
SVR TAB S-GND
HSDHSD OUT1+ OUT1­PW-GND
OUT2+ OUT2­PW-GND
OUT3+ OUT3­PW-GND
OUT4+ OUT4­PW-GND
D94AU158B
November 1999
This is preliminary information on a new productnow in development. Details are subject to change without notice.
100nF470µF
1/10
TDA7560
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
CC (DC)
V
CC (pk)
I
O
P
tot
T
j
T
stg
PIN CONNECTION(Topview)
Operating Supply Voltage 18 V DC Supply Voltage 28 V Peak Supply Voltage (t = 50ms) 50 V Output Peak Current:
Repetitive (Duty Cycle 10% at f = 10Hz) Non Repetitive (t = 100µs)
Power dissipation, (T
=70°C) 80 W
case
9
10
Junction Temperature 150 Storage Temperature – 55 to150 °C
A A
C
°
1 25
TAB
OUT2-
P-GND2
ST-BY
CC
V
OUT2+
OUT1-
P-GND1
SVR
OUT1+
IN1
IN2
IN4
S-GND
IN3
OUT3+
AC-GND
OUT3-
P-GND3
CC
V
MUTE
OUT4+
D94AU159A
OUT4-
P-GND4
HSD
THERMAL DATA
Symbol Parameter Value Unit
Thermal Resistance Junction to Case Max. 1
2/10
R
th j-case
C/W
°
TDA7560
ELECTRICALCHARACTERISTICS(VS= 13.2V;f = 1KHz; Rg= 600;RL=4;T
amb
=25°C;
Refer to the test and application diagram,unless otherwisespecified.)
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
dV
I
q1 OS
OS
Quiescent Current RL=
Output Offset Voltage Play Mode During mute ON/OFF output
120 200 320 mA
80 mV
±
80 mV
±
offset voltage
G
v
dG
P
o
P
o EIAJ
P
o max.
THD Distortion P
e
No
SVR Supply Voltage Rejection f = 100Hz; V
f
ch
R
C
T
I
SB
I
pin4
V
SB out
V
SB in
A
M
V
M out
V
Min
V
AM in
Voltage Gain 25 26 27 dB Channel Gain Unbalance ±1dB
v
Output Power VS= 13.2V; THD = 10%
V
= 13.2V; THD = 1%
S
V
= 14.4V; THD = 10%
S
V
= 14.4V; THD = 1%
S
V
= 13.2V; THD = 10%, 2
S
V
= 13.2V; THD = 1%, 2
S
V
= 14.4V; THD = 10%, 2
S
V
= 14.4V; THD = 1%, 2
S
EIAJ Output Power(*) VS= 13.7V; RL=4
V
= 13.7V; RL=2
S
Max. Output Power (*) VS= 14.4V; RL=4
V
= 14.4V; RL=2
S
=4W
o
P
= 10W; RL=2
o
Ω Ω
Output Noise ”A” Weighted
Bw = 20Hz to 20KHz
= 1Vrms 50 70 dB
r
23 16 28 20
42
32 50 40
41 75
25 19 30 23
45 34 55 43
45 77
50 80
0.006
0.015 35
50
0.05
0.07 50
70
High Cut-Off Frequency PO= 0.5W 100 300 KHz Input Impedance 80 100 120 K
i
Cross Talk f = 1KHz PO=4W
St-By Current Consumption V
f = 10KHz P
= 1.5V 75
St-By
O
=4W
60 70
60
– –
St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA St-By Out ThresholdVoltage (Amp: ON) 3.5 V St-By in Threshold Voltage (Amp: OFF) 1.5 V Mute Attenuation P
=4W 80 90 dB
Oref
Mute Out ThresholdVoltage (Amp: Play) 3.5 V Mute In Threshold Voltage (Amp: Mute) 1.5 V VSAutomute Threshold (Amp: Mute)
Att≥80dB; P
Oref
=4W
6.5 7
(Amp: Play)
I
pin22
Muting Pin Current V
Att < 0.1dB; P
= 1.5V
MUTE
= 0.5W
O
7.5 8
71218
(Sourced Current) V
= 3.5V -5 18 µA
MUTE
HSD SECTION
V
dropout
I
prot
(*) Saturated square wave output.
Dropout Voltage IO= 0.35A; VS= 9 to16V 0.25 0.6 V Current Limits 400 800 mA
W W W W
W W W W
W W
W W
% %
V
µ µV
dB dB
A
µ
V V
A
µ
3/10
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