Datasheet TDA7560 Datasheet (SGS Thomson Microelectronics)



TDA7560

4 x 45WQUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

PRODUCT PREVIEW

SUPERIOROUTPUTPOWER CAPABILITY:
4 x50W/4Ω MAX.
4 x45W/4ΩEIAJ
4 x30W/4Ω@ 14.4V,1KHz, 10%
4 x80W/2Ω MAX.
4 x77W/2Ω EIAJ
4 x55W/2Ω @ 14.4V,1KHz, 10%

EXCELLENT2ΩDRIVINGCAPABILITY
HI-FICLASS DISTORTION
LOW OUTPUT NOISE
ST-BYFUNCTION
MUTEFUNCTION
AUTOMUTEAT MIN. SUPPLYVOLTAGE DE-

TECTION
LOW EXTERNAL COMPONENTCOUNT:

– INTERNALLYFIXED GAIN(26dB)
– NOEXTERNALCOMPENSATION
– NOBOOTSTRAPCAPACITORS

ON BOARD0.35A HIGHSIDE DRIVER

PROTECTIONS:

OUTPUT SHORT CIRCUIT TO GND, TO V
ACROSS THELOAD

VERYINDUCTIVE LOADS
OVERRATING CHIP TEMPERATURE WITH

SOFT THERMAL LIMITER
LOADDUMP VOLTAGE

MULTIPOWER BCD TECHNOLOGY

MOSFETOUTPUT POWER STAGE

FLEXIWATT25

ORDERING NUMBER: TDA7560

FORTUITOUSOPEN GND
REVERSEDBATTERY
ESD

DESCRIPTION

The TDA7560 is a breakthrough BCD (Bipolar /
CMOS / DMOS) technology class AB Audio
Power Amplifier in Flexiwatt 25 package designed
for high power car radio

,

S

The fullycomplementaryP-Channel/N-Channel
output structure allowsa rail to rail outputvoltage
swingwhich, combined with high output current
and minimised saturation losses sets new power
referencesin the car-radiofield, with unparal­leleddistortion performances.

BLOCK AND APPLICATION DIAGRAM

Vcc1 Vcc2

ST-BY

MUTE

IN1

0.1µF

IN2

0.1µF

IN3

0.1µF

IN4

0.1µF

AC-GND

0.47µF47µF

SVR TAB S-GND

HSDHSD
OUT1+
OUT1­PW-GND

OUT2+
OUT2­PW-GND

OUT3+
OUT3­PW-GND

OUT4+
OUT4­PW-GND

D94AU158B

November 1999

This is preliminary information on a new productnow in development. Details are subject to change without notice.

100nF470µF

1/10

TDA7560

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V

CC (DC)

V

CC (pk)

I

O

P

tot

T

j

T

stg

PIN CONNECTION(Topview)

Operating Supply Voltage 18 V
DC Supply Voltage 28 V
Peak Supply Voltage (t = 50ms) 50 V
Output Peak Current:

Repetitive (Duty Cycle 10% at f = 10Hz)
Non Repetitive (t = 100µs)

Power dissipation, (T

=70°C) 80 W

case

9

10

Junction Temperature 150
Storage Temperature – 55 to150 °C

A
A

C

°

1 25

TAB

OUT2-

P-GND2

ST-BY

CC

V

OUT2+

OUT1-

P-GND1

SVR

OUT1+

IN1

IN2

IN4

S-GND

IN3

OUT3+

AC-GND

OUT3-

P-GND3

CC

V

MUTE

OUT4+

D94AU159A

OUT4-

P-GND4

HSD

THERMAL DATA

Symbol Parameter Value Unit

Thermal Resistance Junction to Case Max. 1

2/10

R

th j-case

C/W

°

TDA7560

ELECTRICALCHARACTERISTICS(VS= 13.2V;f = 1KHz; Rg= 600Ω;RL=4Ω;T

amb

=25°C;

Refer to the test and application diagram,unless otherwisespecified.)

Symbol Parameter Test Condition Min. Typ. Max. Unit

V

dV

I

q1
OS

OS

Quiescent Current RL=

∞

Output Offset Voltage Play Mode
During mute ON/OFF output

120 200 320 mA

80 mV

±

80 mV

±

offset voltage

G

v

dG

P

o

P

o EIAJ

P

o max.

THD Distortion P

e

No

SVR Supply Voltage Rejection f = 100Hz; V

f

ch

R

C

T

I

SB

I

pin4

V

SB out

V

SB in

A

M

V

M out

V

Min

V

AM in

Voltage Gain 25 26 27 dB
Channel Gain Unbalance ±1dB

v

Output Power VS= 13.2V; THD = 10%

V

= 13.2V; THD = 1%

S

V

= 14.4V; THD = 10%

S

V

= 14.4V; THD = 1%

S

V

= 13.2V; THD = 10%, 2Ω

S

V

= 13.2V; THD = 1%, 2

S

V

= 14.4V; THD = 10%, 2Ω

S

V

= 14.4V; THD = 1%, 2Ω

S

EIAJ Output Power(*) VS= 13.7V; RL=4Ω

V

= 13.7V; RL=2

S

Max. Output Power (*) VS= 14.4V; RL=4

V

= 14.4V; RL=2Ω

S

=4W

o

P

= 10W; RL=2

o

Ω
Ω

Ω

Output Noise ”A” Weighted

Bw = 20Hz to 20KHz

= 1Vrms 50 70 dB

r

23
16
28
20

42

Ω

32
50
40

41
75

25
19
30
23

45
34
55
43

45
77

50
80

0.006

0.015
35

50

0.05

0.07
50

70

High Cut-Off Frequency PO= 0.5W 100 300 KHz
Input Impedance 80 100 120 KΩ

i

Cross Talk f = 1KHz PO=4W

St-By Current Consumption V

f = 10KHz P

= 1.5V 75

St-By

O

=4W

60 70

60

–
–

St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA
St-By Out ThresholdVoltage (Amp: ON) 3.5 V
St-By in Threshold Voltage (Amp: OFF) 1.5 V
Mute Attenuation P

=4W 80 90 dB

Oref

Mute Out ThresholdVoltage (Amp: Play) 3.5 V
Mute In Threshold Voltage (Amp: Mute) 1.5 V
VSAutomute Threshold (Amp: Mute)

Att≥80dB; P

Oref

=4W

6.5 7

(Amp: Play)

I

pin22

Muting Pin Current V

Att < 0.1dB; P

= 1.5V

MUTE

= 0.5W

O

7.5 8

71218

(Sourced Current)
V

= 3.5V -5 18 µA

MUTE

HSD SECTION

V

dropout

I

prot

(*) Saturated square wave output.

Dropout Voltage IO= 0.35A; VS= 9 to16V 0.25 0.6 V
Current Limits 400 800 mA

W
W
W
W

W
W
W
W

W
W

W
W

%
%

V

µ
µV

dB
dB

A

µ

V
V

A

µ

3/10

TDA7560

Figure 1: Standard Test andApplication Circuit

ST-BY

MUTE

IN1

IN2

IN3

IN4

R1

10K

R2

47K

C1

0.1µF

C2 0.1µF

C3 0.1µF

C4 0.1µF

C9

1µF

C10
1µF

S-GND

0.1µF

4

22

11

12

15

14

13

C5

0.47µF

C8

16 10 25 1

C7

2200µF

Vcc1-2 Vcc3-4

620

SVR TAB

C6

47µF

HSD

9
8
7

5
2
3

17
18
19

21
24
23

OUT1

OUT2

OUT3

OUT4

D95AU335B

4/10

Figure 2: P.C.B. and componentlayout of thefigure 1 (1:1scale)

COMPONENTS &
TOP COPPER LAYER

TDA7560

BOTTOM COPPER LAYER

5/10

TDA7560

Figure 3. Quiescentcurrent vs. supply

voltage.

Id(mA)

240

220

Vi= 0

RL = 4 Ohm

200

180

160

140

8 1012141618

Vs (V)

Figure 5. Outputpower vs. supplyvoltage.

Po(W)

13 0
12 0

Po-m ax

11 0
10 0

90
80

RL= 2 Ohm
f=1KHz

THD =10%

70
60
50
40

THD =1%

30
20
10

8 9 10 11 12 13 14 15 16 17 18

Vs(V)

Figure4. Output powervs. supply voltage.

Po(W)

80
75
70

Po-max

65
60

RL=4Ohm

55

f=1KHz

50

THD=10%

45
40
35
30
25
20

THD=1%

15
10

5

8 9 10 11 12 13 14 15 16 17 18

Vs(V)

Figure6. Distortion vs.output Power

TH D(%)

10

Vs=14.4 V

1

RL=4 Ohm

f=10KHz

0.1

0.01

0.001

0.1 1 10

f=1 KHz

Po(W)

Figure 7. Distortion vs. output power

TH D(%)

10

Vs=14.4 V
RL=2 Ohm

1

f=10KHz

0.1

0.0 1

0.00 1

0.1 1 10

6/10

f=1 KHz

Po (W)

Figure8. Distortion vs.frequency.

THD(%)

10

Vs= 14.4V

1

RL=4 Ohm

Po = 4 W

0.1

0.01

0.001
10 100 1000 10000

f(Hz)

TDA7560

Figure 9. Distortion vs. frequency.

TH D(%)

10

Vs=14.4V

1

RL= 2Ohm

Po= 8 W

0.1

0.01

0.001
10 100 1000 10000

f(Hz)

Figure 11. Supply voltage rejection vs. fre-

quency.

SVR(dB)

100

90
80
70
60

Figure10. Crosstalk vs. frequency.

CROSSTALK(dB)

90
80
70
60
50

RL= 4Ohm

Po=4 W

40

Rg= 600Ohm

30
20

10 100 1000 10000

f(Hz)

Figure12. Output attenuation vs. supply

voltage.

OUTA T TN(dB)

0

-20

-40

RL= 4 Ohm
Po=4 Wref.

50

Rg= 600 Ohm

40

Vripple=1Vrms

30
20

10 100 100 0 1000 0

f(Hz)

Figure 13. Output noise vs. source resistance.

En(uV)

130
120

Vs=14.4V

110

RL=4Ohm

100

90
80
70
60
50
40
30
20

1 10 100 1000 10000 100000

22-22KHzlin.

”A”wgtd

Rg(Ohm)

-60

-80

-100
5678910

Vs(V)

Figure14. Power dissipation& efficiencyvs.

output power (sine-waveoperation)

Ptot(W)

90
80

Vs=13.2V

70

RL=4 x4 Ohm

60

f=1 KHzSINE

50
40
30
20
10

0

024681012141618202224262830

Po(W)

n

Ptot

n(%)

90
80
70
60
50
40
30
20
10
0

7/10

TDA7560

Figure 15. Power dissipationvs. ouput power

(Music/SpeechSimulation)

Ptot(W)

30

Vs=13.2V

25

RL=4 x 4Ohm

GAUSSIANNOISE

20

15

10

5

0123456

CLIP START

Po(W)

APPLICATIONHINTS (ref.to the circuit of fig. 1)
SVR
Besides its contributionto the ripple rejection, the

SVR capacitor governs the turn ON/OFF time se­quence and, consequently,playsan essentialrole
in the pop optimization during ON/OFF tran­sients.To conveniently serve both needs, ITS

MINIMUM RECOMMENDEDVALUE IS 10µF.

Figure16. Power dissipationvs. output power

(Music/SpeechSimulation)

Ptot(W)

60

Vs= 13.2V

55

RL=4 x 2 Ohm
GAUSSIANNOISE

50
45
40
35
30
25
20
15
10

5

0246810

CLIP START

Po(W)

be employed to drive muting and stand-bypins in
absence of trueCMOS ports or microprocessors.

R-C cells have always to be used in order to
smooth down the transitions for preventing any
audibletransient noises.

About the stand-by, the time constant to be as­signed in order to obtain a virtually pop-free tran­sitionhas to be slowerthan 2.5V/ms.

INPUT STAGE
The TDA7560’sinputs are ground-compatibleand

can stand very high input signals (± 8Vpk)without
any performancesdegradation.

If the standard value for the input capacitors
(0.1µF) is adopted, the low frequency cut-off will
amount to 16 Hz.

STAND-BYAND MUTING
STAND-BY and MUTING facilities are both

CMOS-COMPATIBLE. If unused, a straight con­nection to Vs of their respectivepins would be ad­missible. Conventionallow-power transistorscan

HEATSINKDEFINITION
Under normal usage (4 Ohm speakers) the

heatsink’s thermal requirements have to be de­duced from fig. 15, which reports the simulated
power dissipation when real music/speech pro­grammes are played out. Noise with gaussian­distributedamplitude was employed for this simu­lation. Based on that, frequent clipping occurence
(worst-case) will cause Pdiss = 26W. Assuming
Tamb = 70°C and T

= 150°C as boundary

CHIP

conditions, the heatsink’s thermal resistance
should be approximately2°C/W. This would avoid
any thermal shutdown occurence even after long­term andfull-volume operation.

8/10

TDA7560

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 4.45 4.50 4.65 0.175 0.177 0.183
B 1.80 1.90 2.00 0.070 0.074 0.079
C 1.40 0.055
D 0.75 0.90 1.05 0.029 0.035 0.041
E 0.37 0.39 0.42 0.014 0.015 0.016

F (1) 0.57 0.022

G 0.80 1.00 1.20 0.031 0.040 0.047

G1 23.75 24.00 24.25 0.935 0.945 0.955

H (2) 28.90 29.23 29.30 1.138 1.150 1.153

H1 17.00 0.669
H2 12.80 0.503
H3 0.80 0.031

L (2) 22.07 22.47 22.87 0.869 0.884 0.904

L1 18.57 18.97 19.37 0.731 0.747 0.762

L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626

L3 7.70 7.85 7.95 0.303 0.309 0.313
L4 5 0.197
L5 3.5 0.138

M 3.70 4.00 4.30 0.145 0.157 0.169

M1 3.60 4.00 4.40 0.142 0.157 0.173

N 2.20 0.086
O 2 0.079

R 1.70 0.067
R1 0.5 0.02
R2 0.3 0.12
R3 1.25 0.049
R4 0.50 0.019

V5°(Typ.)

V1 3°(Typ.)
V2 20°(Typ.)
V3 45°(Typ.)

(1): dam-bar protusion notincluded
(2): molding protusion included

OUTLINE AND

MECHANICALDATA

Flexiwatt25

L2

H

V3

OL3 L4

V

C

H3

G

H1

G1

R3

H2

F

A

R4

N

V2

R2

R

L

L1

V1

R2

B

V

FLEX25ME

R1

L5

V1

R1 R1

E

M1

M

D

9/10

TDA7560

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in lifesupport devices or systems without express written approval of STMicroelectronics.

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