SGS Thomson Microelectronics TDA7494S Datasheet

®

TDA7494S

10W AMPLIFIER

10W OUTPUT POWER RL = 8Ω, @ THD = 10% V

CC

= 28V ST-BY AND MUTE FUNCTIONS NO BOUCHEROT CELL NO ST-BY RC INPUT NETWORK SINGLE SUPPLY RANGING UP TO 35V SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION INTERNALLY FIXED GAIN SOFT CLIPPING LOW TURN-ON TURN-OFF POP NOIS E MULTIWATT 15 PACKAGE

DESCRIPTION

The TDA7494S 10W is class AB power amplifier assembled in the @Multiwatt 15 package, spe-

BLOCK AND APPLICATION DIAGRAM

MULTIPOWER BI50II TECHNOLOGY

Multiwatt15

ORDERING NUMBER:

cially designed for high quality sound, TV applications. Features of the TDA7494S include Stand-by and mute functions.

TDA7494S

December 1999

IN 1

PWR GND

SGN GND

470nF

1

30K

15

8

D99AU1012

PWR

MUTE/STBY

PROTECTIONS

79 10

SVR

STAND-BY

470µF

13 +V

14

10K 1µF

MUTE

CC

470µF

OUT

1/12

TDA7494S

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

S

V

IN

P

tot

T

amb

, T

T

stg

(1) Operation between -20 to 85 °C guaranteed by correlation with 0 to 70°C. (2) Pin 3 is ESD sensitive (max. voltage ±1.5KV)

PIN CONNECTION

DC Supply Voltage 40 V Maximum Input Voltage 8 Vpp Total Power Dissipation (Tamb = 70°C) 16 W Ambient Operating Temperature Range (1) -20 to +85 °C Storage and Junction Temperature -40 to 150 °C

j

D99AU1014

PWR GND OUT +V

CC

N.C. N.C. MUTE STAND-BY SGN GND SVR N.C. N.C. N.C. N.C. N.C. IN 1

15 14 13 12 11 10

9 8 7 6 5 4 3 2 1

THERMAL DATA

Symbol Parameter Value Unit

R

th j-case

R

th j-amb

ELECTRICAL CHARACTERISTICS

= 25°C; unless otherwise specified.)

T

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

V

S

I

q

DCV

OS

V

O

P

O

Thermal Resistance Junction-case Typ = 3.8 Max = 4.8 °C/W Thermal Resistance Junction-ambient max 35 °C/W

(Refer to the test circuit, V

= 21V, RL = 8Ω; Rg = 50Ω;

S

Supply Voltage Range 11 35 V Total Quiescent Current 22 50 mA Output DC Offset Referred to

No Input Signal -550 550 mV

SVR Potential Quiescent Output Voltage VS = 18V 7.8 9 10.2 V Output Power THD = 10%; VCC = 28V, RL = 8Ω

THD = 1%; V

CC

= 28V

THD = 10%; VCC = 21V, THD = 1%; V

THD = 10%; V THD = 1%; V

= 21V,

CC

= 21V, RL = 4Ω

CC

= 21V,

CC

THD = 10%; VCC = 18V, THD = 1%; V

THD = 10%; V THD = 1%; V

= 18V

CC

= 18V, RL = 8Ω

CC

= 18V

CC

8 6

5

3.5 5

3.9

4.5

3.5

2.2

10

8

5.5 4

6.6

5.5 6

4.5

3.75

2.85

W

W W

W

2/12

TDA7494S

ELECTRICAL CHARACTERISTICS

(continued)

Symbol Parameter Test Condition Min. Typ. Max. Unit

THD Total Harmonic Distortion P

I

T

peak

op

V G

in

V

Output Peak Current (internally limited) 1.4 1.9 A Operating Temperature 0 70 °C Input Signal 2.8 Vrms Closed Loop Gain Vol Ctrl > 4.5V 24.5 26 27.5 dB

= 1W; f = 1KHz; Gv = 26dB 0.4 %

O

BW 0.6 MHz

e

N

Total Output Noise f = 20Hz to 22KHz

30 50 µV

Play f = 20Hz to 22KHz

30 50 µV

Mute

SR Slew Rate 5 8 V/µs

R

i

SVR Supply Voltage Rejection f = 1kHz;

T

M

T

s

V

ST-BY

V

MUTE

I

qST-BY

A

MUTE

I

stbyBIAS

Input Resistance 22.5 30 KΩ

36 43 dB

C

= 470µA; V

SVR

RIP

= 1V

RMS

Thermal Muting 150 °C Thermal Shut-down 160 °C Stand-by threshold 2.3 2.5 2.7 V Mute Threshold 2.3 2.5 2.7 V Quiescent Current @ Stand-by 0.6 1 mA Mute Attenuation 60 75 dB Stand-by bias current Stand by on; V

V

= 5V;

MUTE

ST-BY

= 5V;

80 150 µA

Play or Mute 2 20 µA

I

muteBIAS

Mute bias current Mute 1.5 10 µA

Play 0.5 5 µA

3/12

TDA7494S

Figure 1:

Figure 2:

Test and Application Circuit.

C4 470nF

IN 1

1

87910

SGN GND

P.C.B. and component layout.

SVR

PWR

470µF

STAND-

MUTE/STBY

PROTECTIONS

C8

BY

13 +V

C2

C10

0.1µF

OUT PGND

14

470µF

GND

15

MUTE

C9

1µF

+5V +5V

D99AU1013

R5

10K

S3S2

C1

1000µF

GND

CC

4/12