Datasheet TDA7454 Datasheet (SGS Thomson Microelectronics)

TDA7454
4 x 35W HIGH EFFICIENCY QUAD BRIDGE
CAR RADIO AMPLIFIER
HIGHOUTPUTPOWERCAPABILITY: 4 x40W/4MAX. 4 x35W/4ΩEIAJ. 4 x25W/4Ω@14.4V,1KHz, 10% 4 x60W/2MAX.
2DRIVINGCAPABILITY DUAL MODE OPERATING EXTERNALLY
PRESETTABLE: CONVENTIONAL CLASS A­B MODE,HIGH EFFICIENCYMODE
LOW EXTERNAL COMPONENTSCOUNT: – NO BOOTSTRAPCAPACITORS – NO EXTERNALCOMPENSATION – INTERNALLYFIXED GAIN (26dB)
CLIPPINGDETECTOR ST-BYFUNCTION (CMOS COMPATIBLE) MUTEFUNCTION (CMOS COMPATIBLE) AUTOMUTEAT MINIMUMSUPPLY
VOLTAGEDETECTION LOW RADIATION
Protections:
OUPUTSHORTCIRCUIT TO GND; TO V
; ACROSSTHE LOAD
S
3 STEPS OVERRATING CHIP TEMPERA­TURE WITH THERMAL WARNING
LOADDUMP VOLTAGE FORTUITOUSOPEN GND
BLOCK & APPLICATIONDIAGRAM
MULTIPOWER BCD TECHNOLOGY
Flexiwatt 25
LOUDSPEAKERDC CURRENT ESD
DESCRIPTION
The TD A7454 is a new BCD technology QUAD BRIDGE type of car radio amplifier in Flexiwatt25 packagespeciallyintendedforcarradioapplications. Among the features, its superior efficiency per­formance coming from the internal exclusive structure, makes it the most suitable device to simplify the thermal management in high power sets. The dissipated output power under average listening condition is in fact reduced up to 50% when compared to the level provided by conven­tional class AB solutions.
October 1999
STD/HI- EFF 16
RIGHT
IN
FRONT
ST-BY 4
IN
RIGHT
REAR
MUTE 22
IN LEFT
FRONT
IN LEFT
REAR
CD 25
0.22µF
0.22µF
0.22µF
100µF
0.22µF
SVR
V
CC1
6
20
V
CC2
7
11
12
15
10
14
8
9
S-GND
13
5
2
3
19
18
17
TAB
1
21
24
23
D94AU172C
-
RIGHT FRONT
+
+
RIGHT REAR
-
-
LEFT FRONT
+
+
LEFT REAR
-
V
CC
1/13
TDA7454
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
op
V
V
peak
I
O
I
O
P
tot
T
stg,Tj
THERMAL DATA
Symbol Description Value Unit
R
th j-case
Operating Supply Voltage 18 V DC Supply Voltage 28 V
S
Peak Supply Voltage (for t = 50ms) 40 V Output Peak Current (not repetitive t = 100µs) 8 A Output Peak Current (repetitive f > 10Hz) 6 A Power Dissipation T
=70°C86W
case
Storage and Junction Temperature -55 to 150
Thermal Resistance Junction-case Max 1
°
C/W
°
C
PIN CONNECTION (Topview)
25 24 23 22
20 19 18 17 16 15 14
13 12 11 10
9 8
7 6
4 3 2 1
CD PW GND LR OUT LR­MUTE OUT LR+ V
CC2
OUT LF­PW GND LF OUT LF+ STD/HEFF IN LF IN LR S GND IN RR IN RF SVR OUT RF+ PW GND RF OUT RF­V
CC1
OUT RR+ ST-BY OUT RR­PW GND RR TAB
D94AU173A
2/13
TDA7454
ELECTRICALCHARACTERISTICS(Refer to the test circuit VS=14.4V; RL=4Ω; f = 1KHz;
T
=25°C,unless otherwise specified
amb
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
S
I
d
P
o
Supply Voltage Range 8 18 V Total Quiescent Drain Current 60 140 250 mA Output Power THD = 10%
THD = 1%
23 18
25 20
W W
THD = 10% RL = 2;
P
o EIAJ
THD = 1% R
EIAJ Output Power (*) Vs = 13.7V
=2Ω;
L
Vs = 13.7V, RL = 2
P
o max.
Max. Output Power (*) Vs = 14.4V
Vs = 14.4V, RL = 2
THD Total harmonic distortion P
C
T
R
IN
G
V
G
E
IN
Cross Talk f = 1KHz to 10KHz 45 55 dB Input Impedance 11 15 19 K Voltage Gain 25 26 27 dB Voltage Gain Match 1 dB
V
Output Noise Voltage Rg= 600
= 1W to 10W; STD MODE
O
P
= 1W;HE MODE
O
P
= 10W; HE MODE
O
=2Ω; HE MODE; PO =3W
R
L
R
=2Ω; HE MODE; PO= 15W
L
SVR Supply Voltage Rejection f = 300Hz; Vr = 1Vrms;
R
= 0 to 100;
g
40 28
32 50
38
55
45 52 dB
42 30
35 52
40 60
0.03
0.04
0.1
0.06
0.15
0.3
0.3
0.5
0.3
0.5
100 150 mV
BW Power Bandwidth (–3dB) 75 KHz A
SB
V
sb IN
V
sb OUT
I
sb
A
M
V
MIN
V
M OUT
I
M
CD Clip Det. out Current
(*) Saturated square wave output.
Stand-by Attenuation 90 100 dB Stand-by in Threshold 1.5 V Stand-by out Threshold 3.5 V Stand-by Current Consumption 100 µA Mute Attenuation 80 90 dB Mute in Thereshold 1.5 V Mute out Threshold 3.5 V Mute pin Current (Sourced) V = 0 to V
V
S max
S
= 18V
Mode Select Switch StandardBTL Mode Op. (V
High Efficiency Mode (V
(Pull up to 5V with 10K)
CD off: P CD on: THD = 5% 150
Omin
= 10W
pin16
pin 16
-10 1 10 µA
) Open
) 0.5 V
W W
W W
W W
% % %
% %
5
A
µ µA
3/13
TDA7454
Figure 1: StandardTest and Application Circuit.
ST-BY
MUTE
IN RF
IN RR
IN LF
IN LR
(*) OPEN = STANDARD BTL
R1
10K
R2
10K
C1
0.22µF
C2 0.22µF
C3 0.22µF
C4 0.22µF
CLOSED=HI-EFF BTL
C6
0.1µF
C7
1µF
S-GND
C8
0.1µF
4
22
11
C9
2200µF
Vcc1 Vcc2
620
TDA7454
12
15
14
13
16 10 25 1
(*)
SW1
SVR TAB
C5
100µF
CLIP DET
9 8 7
5 2 3
17 18 19
21 24 23
OUT RF
OUT RR
OUT LF
OUT LR
D95AU416
4/13
Figure 2: P.C.B.and components layout of fig. 1 circuit. (1.25 :1 scale)
COMPONENTS & TOP COPPER LAYER
TDA7454
BOTTOMCOPPER LAYER
5/13
TDA7454
Figure 3: QuiescentCurrent vs. Supply Voltage
Id (mA)
240
200
Vi = 0
160
RL = 4 Ohm
120
80
40
8 1012141618
Vs (V)
Figure 5: Max. Output Power vs. Supply Voltage
Po (W)
60 55 50 45 40 35 30 25 20 15 10
5
RL= 4 Ohm
f= 1 KHz
8 9 10 11 12 13 14 15 16 17 18
Vs (V)
Figure4: OutputPower vs. SupplyVoltage
Po (W)
45 40 35
RL= 4 Ohm
f= 1 KHz
THD= 10 %
30 25 20
THD= 1 %
15 10
5
8 9 10 11 12 13 14 15 16 17 18
Vs (V)
Figure6: OutputPower vs. SupplyVoltage
Po(W)
50 45 40 35
RL= 2 Ohm
f=1KHz
30 25 20 15 10
5
8 9 10 11 12 13 14 15 16
Vs(V)
THD= 10 %
THD= 1 %
Figure 7: Max. Output Power vs. Supply Voltage
Po (W)
75 70 65 60 55 50 45 40 35 30 25 20 15
6/13
RL= 2 Ohm
f= 1 KH z
8 9 10 11 12 13 14 15 16
Vs (V)
Figure8: THDvs. OutputPower
THD(%)
10
RL= 4Ohm
HI-EFFMODE
1
0.1
0
0110
Po(W)
f= 10KHz
f= 1KHz
TDA7454
Figure 9: THD vs. Output Power
THD(%)
10
RL= 2 Ohm
HI-EFFMODE
1
f= 10KHz
0.1
f=1KHz
0
0110
Po(W)
Figure 11: THD vs. Frequency
THD (%)
10
RL = 4 Ohm
1
0.1
0
Po = 1 W HI-EFF MODE
10 100 1000 10000
f(Hz)
Figure10: MutingAttenuationvs. Vpin 22
OUT ATTN
100
90 80
Po= 4 W
70
f= 20 to 20,000 Hz
60 50 40 30 20 10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Vpin22 (V)
Figure12: SupplyVoltage Rejection vs. Fre-
quency
SVR (dB)
100
90
Vripple= 1 Vrms
80
Rg= 0
70 60 50 40 30 20
10 100 1000 10000
f(Hz)
Figure 13: Cross-Talkvs. Frequency
CROSSTALK (dB)
90 80
Po = 4 W
70
RL = 4 Ohm Rg = 0
60
HI-EFF MODE
50 40 30 20
10 100 1000 10000
f (Hz)
Figure14: PowerDissipation and Efficiency vs.
OutputPower
Ptot (W)
70 65
Vs= 14.4 V
60
RL = 4 x 4 Ohm
55
f = 1 KHz
50 45
HI-EFFMODE
40 35
n
30 25 20 15
Ptot
10
5 0
0.1 1 10 Po(W)
n (%)
70 60 50 40 30 20 10 0
7/13
TDA7454
OPERATINGPRINCIPLE.
Thanks to its unique operating principle, the TDA7454 obtains a substantialreductionof power dissipation from traditional class-AB amplifiers without being affected by the massive radiation effects and complex circuitry normally associated with class-Dsolutions. Its is composed of 8 amplifierblocks, making up 4 bridge-equivalent channels. Half of this struc­ture is drafted in fig 15. These blocks continu­ously change their connections during every sin­gle signal event, according to the instantaneous power demand. This means that at low volumes (output power steadily lower than 2.5 W) the TDA7454 acts as a SingleEnded amplifier, condi­tion where block “C” remains disabled and the block “D” behaveslike a buffer, which, by furnish­ing the correct DC biasing (half-Vcc) to each pair of speakers, eliminate the needs of otherwise re­quired output-decouplingcapacitors. At the same time, SW1 keeps closed. thus ensuring a com­mon biasing point for L-R front / L-R rear speak­ers couples.As a result, the equivalentcircuit be­comes that of fig.16.
The internal switches (SW1) are high-speed, dis­sipation-freepower MOS types, whose realization has been made possible by the ST- exclusive By­polar-CMOS-DMOS mixed technology process (BCD). From fig. 16 it can be observed that “A” and “B” amplifiers work in phase opposition. Sup­posing their output have the same signal (equal shape/amplitude), the current sourced by “B” will be entirely sunk by “A”, while no current will flow into “D”, causing no power dissipation in the lat­ter.
“A” and “B” are practically configured as a bridge whose load is constitutedby Ra + Rb (= 8 Ohm, if 4 Ohm speakers are used), with considerable ad­vantages in terms of power dissipation. Designat­ing “A” and “B” for the reproduction of either FRONT or REAR sections of the same channel (LEFT or RIGHT), keeping the fader in centre po­sition (same amplitude for FRONT and REAR sections) and using the same speakers,as it hap­pens during most of the time, will transpose this best-case dissipation condition into practical ap­plications.
To fully take advantageof the TDA7454’s low-dis­sipation feature, it is then especially important to adopt some criteria in the channels assignment, using the schematic of fig. 1 as a reference. When the power demand increases to more than
2.5 W, all the blocks will operate as amplifiers, SW1 is opened,leading to the seemingly conven­tional bridge configuration of fig. 17.
The efficiency enhancement is based upon the concept that the average output power during the reproduction of normal music/speech programs will stand anywhere between 10 % and 15 % of the rated power (@ THD= 10 %)that the amplifier
can deliver. This holds true even at high volumes and frequent clipping occurrence.
Applied to the TDA7454 (rated power= 25 W), this will result into an average output level of 2.5
- 3 W in sine-wave operation, region where the dissipatedpower is about 50 % less than that of a traditionalamplifier of equivalentpower class (see TDA7454 vs. CLASS-AB characteristics, fig. 18). Equally favourable is the case shown by fig. 19, when gaussian-distributed signal amplitudes, which best simulates the amplifier’s real working conditions,are used.
APPLICATION HINTS (ref. to the circuit of fig. 1) STAND-BYand MUTING (pins 4 & 22) Both STAND-BY and MUTING pins are CMOS-
compatible. The current sunk by each of them is about 1 µA. For pop prevention it is essential that during TURN ON/OFF sequences the muting be preventively inserted before making stand-by transitions.But, if for any reason, either muting or stand-by are not used, they have to be connected to Vcc through a 100 Kohm (minimum) resis­tance.
The R-C networksvaluesin fig. 1 (R1-C6and R2­C7) are meant to be the minimum-necessary for obtaining the lowest pop levels possible. Any re­ductions (especially for R2-C7) will inevitably im­pair this parameter.
SVR (pin10) The duty of the SVR capacitor (C5) is double: as-
suring adequate supply-ripple rejection and con­trolling turn ON/OFF operations. Its indicated value (100 uF) is the minimum-recommended to correctlyserve both the purposes.
INPUTS (pins 11-12-13-14) The inputs are internally biased at half-Vcc level.
The typical input impedance is 15 KOhm, which implies using Cin (C1-C2-C3-C4) = 220 nF for ob­taining a theoretical minimum-reproducible fre­quency of 48 Hz (-3 dB). In any case, Cin val­ues can be enlarged if a lower frequency bound is desired, but, at any Cin enlargement must cor­respond a proportional increase of Csvr (C5), to safeguardthe on/off pop aspect. The following table indicatesthe right values to be used for Cin and Csvr, whose operating voltage can be 10 V.
LOW FREQUENCY
ROLL-OFF (-3dB)
48 0.22 100 22 0.47 220 16 0.68 330 11 1 470
Cin (µF) Csvr (µF)
8/13
Table 1: MODE SELECTIONTABLE OPERATIONOF THE DEVICE
1) STD/HI-EFF (pin 16 = OPEN)
TDA7454
STANDARD QUAD BRIDGE MODE
HIGH-EFF QUAD BRIDGE MODE
STANDARD QUAD SINGLE-ENDED MODE
100 150 170
2) STD/HI-EFF (pin 16 = GND)
HIGH-EFF QUAD BRIDGE MODE
STANDARD QUAD SINGLE-ENDED MODE
150 170
3) STD/HI-EFF (pin 16 connected as shown in thefigure below.
STANDARD QUAD BRIDGE MODE OR HIGH-EFF MODE (Theatsink dependent)
HIGH-EFF QUAD BRIDGE MODE
STANDARD QUAD SINGLE-ENDED MODE
100 150 170
ST-BY MODE
Tchip (deg)
ST-BY MODE
Tchip (deg)
ST-BY MODE
Tchip (deg)
Vref
NTC t(Theatsink)STD/HI-EFF (pin 16)
D94AU174A
OUTPUT STAGE STABILITY
The TDA7454’s is intrinsically stable and will properly drive any kind of conventional car-radio speakers without the need of supplementary out­put compensation (e.g. Boucherot cells), thus al­lowing a drastic reduction of the external parts whose number, abated to the essentials, reflects that of traditional amplifiers. In this respect, per­fect pin-to-pin compatibility with the entire Sgs­Thomson’s4-BTLfamily (TDA738X)exists.
STANDARD / HIGH-EFFICIENCY OPERATION (pin 16)
The TDA7454’s operating mode can be selected by changing the connection of pin 16, according to table 1.
At low battery levels (<10 V), the device will auto­maticallyturn into STANDARDBRIDGE mode, in­dependentlyfrom the status of pin 16.
Condition # 3 in table1 is particularlyuseful when the TDA7454’s operation has to be conditioned by the temperature in other more heat-sensitive devices in the same environment. The NTC resis­tor is a temperature sensor, to be situated near the critical part(s), will appropriately drive pin 16 through a low-power transitor. Initially the
TDA7454can be set to operate as a STANDARD BRIDGE, turning into HIGH EFFICIENCY mode only if overheating is recognised in the critical spot, thus reducing the overall temperature in the circuit.
CLIPPINGDETECTOR / DIAGNOSTIC (pin 25)
The TDA7454 is equipped with a diagnostic func­tion whose output is available at pin 25. This pin requires a pull-up resistor (10 KOhm min.) to a DC source that may range from 5 V to Vcc. The following events will be recognized and signaled out:
Clipping
A train of negative-goingpulses will appear, each of them syncronized with every single clipping eventtakingplace in ant of the outputs. A possible application consists of filtering / inte­grating the pulses and implement a routine for automatically reducing / restoring the volume us­ing microprocessor - driven audioprocessors, to counteract the clipping sound-damagingeffects.
Overheating
Chip temperatures above 150 oC will be signaled out at pin 25 in the form of longer-lastingpulses, as the stepping back into the operating tempera­ture requires some time.
9/13
TDA7454
This constitues a substantial difference from the “clipping” situation, making the two information unmistakable. Associated to a suitable external circuitry, this “warning” signal could be used to mute some portions of the I.C. (e.g. the rear channels) or to attenuatethe volume.
Short Circuit
Some kinds of short circuit (OUT - GND, OUT­Vcc), either present before the power-on or made afterwards, will cause pin 25 to remain steadily low as long as the faulty condition persists. Short-circuits across the speakers will give inter­mittent (pulsed) signalling, proportional to the output voltageamplitude.
ExternalLayout Grounding
The 4 bridge stuctures have independent power ground accesses (pins 2,8,18,24), while the sig­nal ground is common to all of them (pin 13). The
Figure 15: TDA7454’sHalf Structure
TAB (pin 1) is connected to the chip substrate and has to be grounded to the best-filtered ground spot (usually nearby the minus terminal of the Vcc-filtering electrolytic capacitor). This same point should be used as the centre of a multi-track star-like configuration, or, alternatively,as the ori­gin of only two separate tracks, one for P-GND, one for S-GND, each of them routed to their spe­cificground pin(s). This will provide the right degree of separation between P-GND and S-GND yet assuring the (necessary) electrical connection between them. The correct ground assignment for the each ele­mentof the circuit will then be:
POWERGND:
Battery(-), Supplyfilters(C8, C9), TAB (pin 1).
SIGNAL GND:
Pre-amplifier (Audiprocessor) ground, SVR ca­pacitor(C5), muting/st-bycapacitors (C6, C7).
Figure16: SingleEnded Operation (Po < 2.5W)
A
INF INR
C
F-channel R-channel
+
-
CONTROL
LOGIC
SW1
-
RRRF
+
B
D
D97AU792
Figure 17: He Bridge Operation (Po < 2.5W)
+
INF INR
A
V
f
C
-
-
RRRF
+
B
V
r
D
D97AU794
INF INR
AB
D97AU793
+
V
f
-
i
f
-
RRRF
V
r
R
on2
+
D
if-i
r
10/13
TDA7454
Figure 18: Power Dissipation(Sine-Wave)
Pdiss (W)
55 50 45 40 35 30 25 20 15 10
5 0
Vs = 14.4 V
RL = 4 x 4 Ohm
CLASS-AB
TDA7454
0.1 1 10 Po each channel (W)
Figure19: PowerDissipation (GaussianSignals)
Pdiss (W)
45 40 35 30
Vs = 14.4 V
RL = 4 x 4 Ohm
CLASS-AB
25 20 15 10
TDA7454
5 0
0.1 1 10
Pou t eachchannel(W)
11/13
TDA7454
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 4.45 4.50 4.65 0.175 0.177 0.183 B 1.80 1.90 2.00 0.070 0.074 0.079 C 1.40 0.055 D 0.75 0.90 1.05 0.029 0.035 0.041 E 0.37 0.39 0.42 0.014 0.015 0.016
F (1) 0.57 0.022
G 0.80 1.00 1.20 0.031 0.040 0.047
G1 23.75 24.00 24.25 0.935 0.945 0.955
H (2) 28.90 29.23 29.30 1.138 1.150 1.153
H1 17.00 0.669 H2 12.80 0.503 H3 0.80 0.031
L (2) 22.07 22.47 22.87 0.869 0.884 0.904
L1 18.57 18.97 19.37 0.731 0.747 0.762
L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626
L3 7.70 7.85 7.95 0.303 0.309 0.313 L4 5 0.197 L5 3.5 0.138
M 3.70 4.00 4.30 0.145 0.157 0.169
M1 3.60 4.00 4.40 0.142 0.157 0.173
N 2.20 0.086 O 2 0.079
R 1.70 0.067 R1 0.5 0.02 R2 0.3 0.12 R3 1.25 0.049 R4 0.50 0.019
V5°(Typ.) V1 3° (Typ.) V2 20°(Typ.) V3 45°(Typ.)
(1): dam-bar protusion not included (2): molding protusion included
OUTLINE AND
MECHANICAL DATA
Flexiwatt25
L2
H
V3
OL3 L4
V
C
H3
G
H1
G1
R3
H2
F
A
R4
N
V2
R2
R
L
L1
V1
R2
B
V
FLEX25ME
L5
R1
R1 R1
V1
D
E
M1
M
12/13
TDA7454
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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