SGS Thomson Microelectronics TDA2822M Datasheet

DUALLOW-VOLTAGE POWER AMPLIFIER

.

SUPPLYVOLTAGE DOWN TO 1.8V

.

LOW CROSSOVERDISTORSION

.

LOW QUIESCENTCURRENT

.

BRIDGE ORSTEREOCONFIGURATION

DESCRIPTION

TheTDA2822Mis amonolithicintegratedcircuit in
8 lead Minidip package. It is intended for use as
dual audio power amplifier in portable cassette
playersand radios.

TDA2822M

MINIDIP

ORDERING NUMBER : TDA2822M

PIN CONNECTION (Top view)

March 1995

1/11

TDA2822M

SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

Supply Voltage 15 V
Peak Output Current 1 A
Total Power Dissipation at T

at T

amb
case

=50°C

=50°C

1

1.4

Storage and Junction Temperature – 40, + 150 °C

P

T

stg,Tj

V

s

I

o
tot

THERMALDATA

Symbol Parameter Value Unit

R

th j-amb

R

th j-case

Thermal Resistance Junction-ambient Max. 100 °C/W
Thermal Resistance Junction-pin (4) Max. 70 °C/W

W
W

2/11

TDA2822M

ELECTRICALCHARACTERISTICS (VS=6V,T

=25oC, unlessotherwisespecified)

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

STEREO (test circuit of Figure 1)

V
V

P

G

∆G

e

Supply Voltage 1.8 15 V

s

Quiescent Output Voltage

o

I

Quiescent Drain Current 6 9 mA

d

I

Input Bias Current 100 nA

b

Output Power (each channel)

o

(f = 1kHz, d = 10%) R

d Distortion (f = 1kHz) R

Closed Loop Voltage Gain f = 1kHz 36 39 41 dB

v

Channel Balance ± 1dB

v

R

Input Resistance f = 1kHz 100 kΩ

i

Total Input Noise Rs= 10kΩ B = Curve A

N

=3V

V

s

=32Ω VS=9V

L

=16Ω VS=6V

R

L

=8Ω VS=9V

R

L

=4Ω VS=6V

R

L

=32Ω Po= 40mW

L

=16Ω Po= 75mW

R

L

=8Ω Po= 150mW

R

L

V
V
V
V

V
V

V

=6V

S

= 4.5V

S

=3V

S

=2V

S

=6V

S

= 4.5V

S

=3V

S

B = 22Hz to 22kHz

90

15
170
300

450

2.7

1.2

300
120

60
20

5

220

1000

380
650
320
110

0.2

0.2

0.2

2

2.5

V
V

mW

%
%
%

µV
µV

SVR Supply Voltage Rejection f = 100Hz, C1 = C2 = 100µF2430 dB

C

Channel Separation f = 1kHz 50 dB

s

BRIDGE (test circuit of Figure 2)

V

V

P

G

e

Supply Voltage 1.8 15 V

s

I

Quiescent Drain Current RL= ∞ 69mA

d

Output Offset Voltage

os

(between the outputs)
Input Bias Current 100 nA

I

b

Output Power (f = 1kHz, d = 10%)

o

d Distortion P

Closed Loop Voltage Gain f = 1kHz 39 dB

v

R

Input Resistance f = 1kHz 100 kΩ

i

Total Input Noise Rs= 10kΩ B = Curve A

N

RL=8Ω ±50 mV

=32Ω VS=9V

R

L

=16Ω VS=9V

R

L

=8Ω VS=6V

R

L

=4Ω VS= 4.5V

R

L

= 0.5W, RL=8Ω, f = 1kHz 0.2 %

o

V
V
V
V

V
V

V
V

V
V

=6V

S

= 4.5V

S

=3V

S

=2V

S

=6V

S

=3V

S

= 4.5V

S

=3V

S

=3V

S

=2V

S

320

50

900

200

1000

400
200

65

8

2000

800
120

1350

700
220

1000

350

80

2.5

B = 22Hz to 22kHz

3

mW

µV
µV

SVR Supply Voltage Rejection f = 100Hz 40 dB

B Power Bandwidth (–3dB) R

=8Ω,Po= 1W 120 kHz

L

3/11

TDA2822M

Figure1 : TestCircuit (Stereo)

Figure2 : TestCircuit (Bridge)

Figure3 : P.C.Board and Components Layout

of the Circuitof Figure1

4/11

Figure 4 : P.C. Boardand ComponentsLayout

of theCircuit of Figure 2