SGS Thomson Microelectronics TDA2009, TDA2009A Datasheet
.
HIGH OUTPUTPOWER
(10 + 10W Min. @ D = 1%)
.
HIGH CURRENTCAPABILITY(UPTO3.5A)
.
AC SHORTCIRCUITPROTECTION
.
THERMAL OVERLOADPROTECTION
.
SPACE AND COST SAVING : VERY LOW
NUMBER OF EXTERNAL COMPONENTS
AND SIMPLE MOUNTING THANKS TO THE
MULTIWATT
DESCRIPTION
TheTDA2009Ais classABdualHi-Fi Audio power
amplifier assembled in Multiwatt
cially designed for high quality stereo application
asHi-Fi and music centers.
PACKAGE.
package, spe-
TDA2009A
10 +10W STEREO AMPLIFIER
MULTIWATT11
ORDERING NUMBER : TDA2009A
PIN CONNECTION
May 1995
1/12
TDA2009A
SCHEMATICDIAGRAM
2/12
TDA2009A
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
s
I
o
I
o
P
tot
T
stg,Tj
THERMALDATA
Symbol Parameter Value Unit
R
th j-case
ELECTRICALCHARACTERISTICS
(refer to the stereo applicationcircuit,T
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
s
V
o
I
d
P
o
d Distortion (each channel) f = 1kHz, V
CT Cross Talk (3) R
V
i
R
i
f
L
f
H
G
v
∆G
v
e
N
SVR Supply Voltage Rejection (each channel) R
T
J
Supply Voltage 28 V
Output Peak Current (repetitive f ≥ 20 Hz) 3.5 A
Output Peak Current (non repetitive, t = 100 µs) 4.5 A
Power Dissipation at T
=90°C20W
case
Storage and Junction Temperature – 40, + 150 °C
Thermal Resistance Junction-case Max. 3 °C/W
=25oC, VS= 24V, GV=36dB,unless otherwise specified)
amb
Supply Voltage 8 28 V
Quiescent OutputVoltage Vs= 24V 11.5 V
Total Quiescent Drain Current Vs= 24V 60 120 mA
Output Power (each channel) d = 1%, Vs= 24V, f = 1kHz
=4Ω
R
L
=8Ω
R
L
f = 40Hz to 12.5kHz
=4Ω
R
L
=8Ω
R
L
= 18V, f = 1kHz
V
s
=4Ω
R
L
=8Ω
R
L
= 24V
s
= 0.1 to 7W RL=4Ω
P
o
= 0.1 to 3.5W RL=8Ω
P
o
= 18V
V
s
= 0.1 to 5W RL=4Ω
P
o
= 0.1 to 2.5W RL=8Ω
P
o
= ∞,Rg= 10kΩ
L
f = 1kHz
f = 10kHz
12.5
7
10
5
7
4
0.2
0.1
0.2
0.1
60
50
Input SaturationVoltage (rms) 300 mV
Input Resistance f = 1kHz, Non InvertingInput 70 200 kΩ
Low Frequency Roll off (– 3dB) RL=4Ω 20 Hz
High Frequency Roll off (– 3dB) RL=4Ω 80 kHz
Voltage Gain (closed loop) f = 1kHz 35.5 36 36.5 dB
Closed Loop Gain Matching 0.5 dB
Total Input Noise Voltage Rg= 10kΩ (1)
= 10kΩ (2)
R
g
= 10kΩ
g
= 100Hz, V
f
ripple
ripple
= 0.5V
1.5
2.5 8
55 dB
Thermal Shut-downJunction Temperature 145 °C
W
W
W
W
W
W
%
%
%
%
dB
µV
µV
Notes : 1. Curve A
2. 22Hz to 22kHz
3/12
TDA2009A
Figure1 : Testand Application Circuit (GV=36dB)
Figure2 : P.C.board and componentlayoutof the fig. 1
4/12
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