SGS Thomson Microelectronics TDA2009, TDA2009A Datasheet

.

HIGH OUTPUTPOWER
(10 + 10W Min. @ D = 1%)

.

HIGH CURRENTCAPABILITY(UPTO3.5A)

.

AC SHORTCIRCUITPROTECTION

.

THERMAL OVERLOADPROTECTION

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SPACE AND COST SAVING : VERY LOW
NUMBER OF EXTERNAL COMPONENTS
AND SIMPLE MOUNTING THANKS TO THE
MULTIWATT

DESCRIPTION

TheTDA2009Ais classABdualHi-Fi Audio power
amplifier assembled in Multiwatt
cially designed for high quality stereo application
asHi-Fi and music centers.



PACKAGE.



package, spe-

TDA2009A

10 +10W STEREO AMPLIFIER

MULTIWATT11

ORDERING NUMBER : TDA2009A

PIN CONNECTION

May 1995

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TDA2009A

SCHEMATICDIAGRAM

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TDA2009A

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

s

I

o

I

o

P

tot

T

stg,Tj

THERMALDATA

Symbol Parameter Value Unit

R

th j-case

ELECTRICALCHARACTERISTICS

(refer to the stereo applicationcircuit,T

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

s

V

o

I

d

P

o

d Distortion (each channel) f = 1kHz, V

CT Cross Talk (3) R

V

i

R

i

f

L

f

H

G

v

∆G

v

e

N

SVR Supply Voltage Rejection (each channel) R

T

J

Supply Voltage 28 V
Output Peak Current (repetitive f ≥ 20 Hz) 3.5 A
Output Peak Current (non repetitive, t = 100 µs) 4.5 A
Power Dissipation at T

=90°C20W

case

Storage and Junction Temperature – 40, + 150 °C

Thermal Resistance Junction-case Max. 3 °C/W

=25oC, VS= 24V, GV=36dB,unless otherwise specified)

amb

Supply Voltage 8 28 V
Quiescent OutputVoltage Vs= 24V 11.5 V
Total Quiescent Drain Current Vs= 24V 60 120 mA
Output Power (each channel) d = 1%, Vs= 24V, f = 1kHz

=4Ω

R

L

=8Ω

R

L

f = 40Hz to 12.5kHz

=4Ω

R

L

=8Ω

R

L

= 18V, f = 1kHz

V

s

=4Ω

R

L

=8Ω

R

L

= 24V

s

= 0.1 to 7W RL=4Ω

P

o

= 0.1 to 3.5W RL=8Ω

P

o

= 18V

V

s

= 0.1 to 5W RL=4Ω

P

o

= 0.1 to 2.5W RL=8Ω

P

o

= ∞,Rg= 10kΩ

L

f = 1kHz
f = 10kHz

12.5
7

10

5

7
4

0.2

0.1

0.2

0.1

60

50
Input SaturationVoltage (rms) 300 mV
Input Resistance f = 1kHz, Non InvertingInput 70 200 kΩ
Low Frequency Roll off (– 3dB) RL=4Ω 20 Hz
High Frequency Roll off (– 3dB) RL=4Ω 80 kHz
Voltage Gain (closed loop) f = 1kHz 35.5 36 36.5 dB
Closed Loop Gain Matching 0.5 dB
Total Input Noise Voltage Rg= 10kΩ (1)

= 10kΩ (2)

R

g

= 10kΩ

g

= 100Hz, V

f

ripple

ripple

= 0.5V

1.5

2.5 8
55 dB

Thermal Shut-downJunction Temperature 145 °C

W
W

W
W

W
W

%
%

%
%

dB

µV
µV

Notes : 1. Curve A

2. 22Hz to 22kHz

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TDA2009A

Figure1 : Testand Application Circuit (GV=36dB)

Figure2 : P.C.board and componentlayoutof the fig. 1

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TDA2009A

Figure3 : OutputPowerversusSupply Voltage Figure 4 : Output Power versus SupplyVoltage

Figure5 : Distortion versusOutputPower Figure 6 : Distortionversus Frequency

Figure7 : Distortion versusFrequency Figure 8 : QuiescentCurrent versus

SupplyVoltage

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TDA2009A

Figure9 : SupplyVoltageRejection versus

Frequency

Figure11 : TotalPowerDissipation and

Efficiencyversus Output Power

Figure 10 : Total PowerDissipationand

EfficiencyversusOutputPower

APPLICATION INFORMATION
Figure12 : Example of Muting Circuit

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Figure13 : 10W +10W Stereo Amplifierwith ToneBalanceand Loudness Control

TDA2009A

Figure14 : Tone ControlResponse

(circuit of Figure 13)

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TDA2009A

Figure15 : High Quality20 + 20W TwoWayAmplifier for StereoMusicCenter (one channel only)

Figure16 : 18W Bridge Amplifier(d = 1%, G

=40dB)

V

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TDA2009A

Figure17 : P.C. BOARD and ComponentsLayoutof the Circuitof Figure 16 (1:1 scale)

APPLICATION SUGGESTION

The recommendedvaluesof the componentsare those shown on applicationcircuit of fig. 1. Different
valuescan be used ; the following table can help the designer.

Component

R1, R3 1.2kΩ Close Loop Gain
R2, R4 18kΩ Decrease of Gain Increase of Gain
R5, R6 1Ω Frequency Stability Danger of Oscillation at High

C1, C2 2.2µF Input DC Decoupling High Turn-on Delay High Turn-on Pop.

C3 22µF Ripple Rejection Better SVR. Increase of the
C6, C7 220µF Feedback Input DC
C8, C9 0.1µF Frenquency Stability Danger of Oscillation

C10, C11 1000µFto

(1) The closed loop gain must behigher than 26dB.

Recommended

Value

2200µF

Purpose Larger than Smaller than

Setting (1)

Decoupling

Output DC
Decoupling

Increase of Gain Decrease of Gain

Frequency with Inductive Load

Higher Low Frequency
Cut-off. Increase of Noise

Degradation of SVR

Switch-on Time

Higher Low-frequency
Cut-off

BUILD-IN PROTECTION SYSTEMS

THERMAL SHUT-DOWN
Thepresenceof athermallimiting circuitoffersthe

followingadvantages:

1) an averload on the output (even if it is
pe rman e nt ), o r an e xcessi ve ambien t
temperaturecanbe easilywithstood.

2) the heatsinkcan have a smallerfactor of safety
compared with that of a conventional circuit.
There is no device damage in the case of
excessive junction temperature : all tha t
happensis thatP

(andthereforeP

o

)andIoare

tot

reduced.

The maximum allowable power dissipation de­pends upon the size of the externalheatsink (i.e.
its thermalresistance); Figure18 shows this dissi­pable power as a functionofambient temperature
for differentthermal resistance.

Short circuit (AC Conditions). The TDA2009Acan
withstandanaccidentalshortcircuitfromtheoutput
and ground made by a wrong connection during
normal play operation.

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TDA2009A

MOUNTINGINSTRUCTIONS

The power dissipated in the circuit must be re­movedby adding an external heatsink.

Thanks to the MULTIWATT  package attaching

the heatsink is very simple,a screwor a compres­sion spring (clip) being sufficient. Between the
heatsinkandthepackageitisbettertoinsertalayer
of silicon grease, to optimize the thermalcontact;
no electrical isolation is needed between the two

Figure18 : Maximum Allowable Power Dissipa-

tion versusAmbient Temperature

Figure20 : OutputPowerand DrainCurrentver-

susCase Temperature

Figure 19 : Output Power versusCase

Temperature

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MULTIWATT11 PACKAGEMECHANICAL DATA

TDA2009A

DIM.

A 5 0.197

B 2.65 0.104
C 1.6 0.063
D 1 0.039

E 0.49 0.55 0.019 0.022

F 0.88 0.95 0.035 0.037
G 1.45 1.7 1.95 0.057 0.067 0.077

G1 16.75 17 17.25 0.659 0.669 0.679
H1 19.6 0.772
H2 20.2 0.795

L 21.9 22.2 22.5 0.862 0.874 0.886

L1 21.7 22.1 22.5 0.854 0.87 0.886
L2 17.4 18.1 0.685 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

M 4.25 4.55 4.85 0.167 0.179 0.191

M1 4.73 5.08 5.43 0.186 0.200 0.214

S 1.9 2.6 0.075 0.102

S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

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TDA2009A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No
license is granted by implicationor otherwise underany patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products arenot authorized for useas critical components inlife supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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